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1. 发明授权

US5125706A Article holding apparatus 失效
标题翻译：物品装置
公开(公告)号：US5125706A
公开(公告)日：1992-06-30
申请号：US639391
申请日：1991-01-10
申请人： Kimio Kuwaki , Keiji Sakurai , Itsuo Araki
发明人： Kimio Kuwaki , Keiji Sakurai , Itsuo Araki
IPC分类号： B25J15/06 , B25J15/08 , B65G47/91
CPC分类号： B65G47/917 , Y10S294/907
摘要： An article holding apparatus includes a pair of sliding plates selectively movable toward or away from each other while being maintained parallel to each other. A distance between the sliding plates is adjustable. Suction pads are provided on inner surfaces of the sliding plates respectively. The suction pads may include first suction pads for holding a large article and second suction pads for holding a small article. Sensor elements may be mounted on the plates to sense whether a large or a small article is present to be handled thereby.
摘要翻译：物品保持装置包括一对滑动板，它们可以彼此平行地保持彼此相互朝向或远离彼此移动。滑板之间的距离是可调节的。吸盘分别设置在滑板的内表面上。吸盘可以包括用于保持大物品的第一吸盘和用于保持小物品的第二吸盘。传感器元件可以安装在板上以感测是否存在待处理的大的或小的物品。

2. 发明授权

US07645526B2 Member for plasma etching device and method for manufacture thereof 有权
标题翻译：等离子体蚀刻装置的构件及其制造方法
公开(公告)号：US07645526B2
公开(公告)日：2010-01-12
申请号：US10546798
申请日：2003-09-16
申请人： Kyoichi Inaki , Itsuo Araki
发明人： Kyoichi Inaki , Itsuo Araki
IPC分类号： B32B9/00 , B32B19/00 , C03C3/04 , C03C3/06 , C04B35/50
CPC分类号： C23C26/00 , C23C4/11 , C23C4/18 , C23C30/00 , H01J37/32477 , H01L21/67069
摘要： A member for a plasma etching device, comprising a coating film of yttrium oxide or YAG having a coating film thickness of 10 μm or more, a coating film thickness variance of 15% or less, preferably a surface roughness (Ra) of 1 μm or less, formed on a surface of a member, comprising quartz glass which contains 1 to 10% by weight of yttrium oxide or YAG. The member for a plasma etching device has high plasma resistance, is not subjected to an abnormal etching on the basis of a partial change of electric properties and, accordingly, can be used for a long period of time. Even when the member is large enough to handle 12-inch Si wafers, the above-described advantageous properties are maintained and the member can be used for a long period of time.
摘要翻译：一种用于等离子体蚀刻装置的构件，其包括涂覆膜厚度为10μm或更大，涂膜厚度变化为15％或更小，优选表面粗糙度（Ra）为1μm或更大的氧化钇涂层或YAG涂层，或较少，形成在构件的表面上，包括含有1-10重量％的氧化钇或YAG的石英玻璃。用于等离子体蚀刻装置的构件具有高等离子体电阻，不会基于电性能的部分变化而进行异常蚀刻，因此可以长时间使用。即使当该构件足够大以处理12英寸Si晶片时，仍保持上述有利的特性，并且该构件可以长时间使用。

3. 发明申请

US20080241412A1 Member for plasma etching device and method for manufacture thereof 审中-公开
标题翻译：等离子体蚀刻装置的构件及其制造方法
公开(公告)号：US20080241412A1
公开(公告)日：2008-10-02
申请号：US11983006
申请日：2007-11-06
申请人： Kyoichi Inaki , Itsuo Araki
发明人： Kyoichi Inaki , Itsuo Araki
IPC分类号： B05D5/02 , C23C4/10 , C23C4/06 , B05D3/00
CPC分类号： C23C26/00 , C23C4/11 , C23C4/18 , C23C30/00 , H01J37/32477 , H01L21/67069
摘要： A member for a plasma etching device, which comprises a device substrate comprising quartz glass, aluminum, alumite or a combination thereof and, formed on the surface thereof, a coating film of yttrium oxide or YAG having a film thickness of 10 μm or more and a variation in the thickness of 10% or less, and preferably a surface roughness (Ra) of 1 μm or less; and a method for manufacturing the member for a plasma etching device, which comprises a step of plasma-spraying yttrium oxide or YAG to the surface of said device substrate or a step of fusing yttrium oxide or YAG with an oxyhydrogen flame, followed by coating the surface with the fused product, or a step of applying a solution containing yttrium, a yttrium compound or YAG on the above surface, followed by heating to fuse the resultant coating, or a combination of the above steps, thereby forming a coating film of yttrium oxide or YAG having a film thickness 10 μm or more and a variation in the thickness of 10% or less, and preferably a surface roughness (Ra) of 1 μm or less. The member for a plasma etching device is capable of retaining high plasma resistance for a long period of time, is free from the occurrence of the abnormal etching owing to partial change of electric characteristics, and thus can be used for a long time, in particular, even in the treatment of a large semiconductor device of a 12 inch silicon wafer.
摘要翻译：一种用于等离子体蚀刻装置的构件，其包括包括石英玻璃，铝，耐酸铝或其组合的器件基板，并且在其表面上形成具有10μm以上的膜厚度的氧化钇或YAG的涂膜，以及厚度的变化为10％以下，优选为1μm以下的表面粗糙度（Ra）。以及用于制造等离子体蚀刻装置的构件的方法，其包括将氧化钇或YAG等离子体喷涂到所述装置基板的表面上的步骤或将氧化钇或YAG与氢氧焰熔合的步骤，然后将或者在上述表面上涂布含有钇，钇化合物或YAG的溶液的步骤，然后加热以使得到的涂层或上述步骤的组合熔合，从而形成钇涂层氧化物或YAG，其膜厚为10μm以上，厚度变化为10％以下，优选表面粗糙度（Ra）为1μm以下。等离子体蚀刻装置的构件能够长期保持高等离子体电阻，由于电特性的部分变化而不发生异常蚀刻，因此可以长时间使用，即使在处理12英寸硅晶片的大型半导体器件时也是如此。

4. 发明授权

US06796439B2 Vertical type wafer supporting jig 失效
标题翻译：垂直型晶片支撑夹具
公开(公告)号：US06796439B2
公开(公告)日：2004-09-28
申请号：US10140764
申请日：2002-05-08
申请人： Itsuo Araki
发明人： Itsuo Araki
IPC分类号： A47G1908
CPC分类号： H01L21/67303 , C30B31/14 , H01L21/67309
摘要： In a vertical type wafer supporting jig, a ring-like support plate is fixed to support pillars by a simple structure without conventional welding and without risk of the ring-like support plate falling off. The vertical type wafer supporting jig is configured for mounting many wafers onto many support plates stacked in a vertical direction and fixed to support pillars with a predetermined wafer mounting interval between the support plates. Support groove portions into which the support plates are inserted and supported are formed in the support pillars with a predetermined interval in the vertical direction between them. A fixing rod is provided adjoining at least one of the support pillars. A peripheral part of the support plate has at least one receiving groove corresponding to the fixing rod, and the support plate is fixed to and supported by the support pillars by inserting the support plate into the support groove part, in which it is supported, and fitting the fixing rod into the receiving groove of the support plate.
摘要翻译：在垂直型晶片支撑夹具中，环状支撑板通过简单的结构被固定成支撑柱，而不需要常规的焊接，并且没有环状支撑板脱落的风险。垂直型晶片支撑夹具被配置为将许多晶片安装到沿垂直方向堆叠的许多支撑板上，并且在支撑板之间以预定的晶片安装间隔固定到支撑柱。在支撑柱中，支撑板被插入和支撑在其中的支撑槽部分以它们之间的垂直方向上的预定间隔形成在支撑柱中。设置有邻接至少一个支撑柱的固定杆。支撑板的周边部分具有至少一个对应于固定杆的接收槽，并且支撑板通过将支撑板插入其支撑的支撑槽部分中而固定到支撑柱并由其支撑，并且将固定杆装配到支撑板的接收槽中。

5. 发明申请

US20060172544A1 Member for plasma etching device and method for manufacture thereof 有权
标题翻译：等离子体蚀刻装置的构件及其制造方法
公开(公告)号：US20060172544A1
公开(公告)日：2006-08-03
申请号：US10546798
申请日：2003-09-16
申请人： Kyoichi Inaki , Itsuo Araki
发明人： Kyoichi Inaki , Itsuo Araki
IPC分类号： H01L21/306 , H01L21/302 , C23F1/00
CPC分类号： C23C26/00 , C23C4/11 , C23C4/18 , C23C30/00 , H01J37/32477 , H01L21/67069
摘要： A member for a plasma etching device, which comprises a device substrate comprising quartz glass, aluminum, alumite or a combination thereof and, formed on the surface thereof, a coating film of yttrium oxide or YAG having a film thickness of 10 μm or more and a variation in the thickness of 10% or less, and preferably a surface roughness (Ra) of 1 μm or less; and a method for manufacturing the member for a plasma etching device, which comprises a step of plasma-spraying yttrium oxide or YAG to the surface of said device substrate or a step of fusing yttrium oxide or YAG with an oxyhydrogen flame, followed by coating the surface with the fused product, or a step of applying a solution containing yttrium, a yttrium compound or YAG on the above surface, followed by heating to fuse the resultant coating, or a combination of the above steps, thereby forming a coating film of yttrium oxide or YAG having a film thickness 10 μm or more and a variation in the thickness of 10% or less, and preferably a surface roughness (Ra) of 1 μm or less. The member for a plasma etching device is capable of retaining high plasma resistance for a long period of time, is free from the occurrence of the abnormal etching owing to partial change of electric characteristics, and thus can be used for a long time, in particular, even in the treatment of a large semiconductor device of a 12 inch silicon wafer.
摘要翻译：一种用于等离子体蚀刻装置的构件，其包括包括石英玻璃，铝，耐酸铝或其组合的器件基板，并且在其表面上形成具有10μm以上的膜厚度的氧化钇或YAG的涂膜，以及厚度的变化为10％以下，优选为1μm以下的表面粗糙度（Ra）。以及用于制造等离子体蚀刻装置的构件的方法，其包括将氧化钇或YAG等离子体喷涂到所述装置基板的表面上的步骤或将氧化钇或YAG与氢氧焰熔合的步骤，然后将或者在上述表面上涂布含有钇，钇化合物或YAG的溶液的步骤，然后加热以使得到的涂层或上述步骤的组合熔合，从而形成钇涂层氧化物或YAG，其膜厚为10μm以上，厚度变化为10％以下，优选表面粗糙度（Ra）为1μm以下。等离子体蚀刻装置的构件能够长期保持高等离子体电阻，由于电特性的部分变化而不发生异常蚀刻，因此可以长时间使用，即使在处理12英寸硅晶片的大型半导体器件时也是如此。

6. 发明申请

US20080216513A1 Method for the Regeneration of a Worn Quartz Glass Jig 审中-公开
标题翻译：磨损石英玻璃夹具的再生方法
公开(公告)号：US20080216513A1
公开(公告)日：2008-09-11
申请号：US11919457
申请日：2006-04-27
申请人： Tatsuhiro Sato , Akira Fujinoki , Itsuo Araki
发明人： Tatsuhiro Sato , Akira Fujinoki , Itsuo Araki
IPC分类号： C03B19/00 , C03C3/06
CPC分类号： C03B32/00 , C03B23/20 , C03C3/06 , C03C23/007 , C03C23/0075 , C03C2201/34 , C03C2201/40 , C03C2201/54
摘要： To provide a technique with which a quartz glass jig and a doped quartz glass jig are regenerated by completely removing the impurities which are attached to the surface and the impurities which have diffused into the interior from quartz glass jigs which have been used in semiconductor production processes and then carrying out working repair and removing the contamination from the working processes as well. After use, the impurities are removed from the aforementioned quartz glass jigs in the said purification treatment process which includes a purification treatment process in which the quartz glass jigs are subjected to a purification treatment in a gaseous atmosphere which includes a halogen element at a temperature within the region above a prescribed temperature.
摘要翻译：为了提供通过完全去除已经用于半导体制造工艺中的石英玻璃夹具将附着在表面上的杂质和已经扩散到内部的杂质完全除去石英玻璃夹具和掺杂石英玻璃夹具的技术然后进行工作维修和清除工作过程中的污染物。使用后，在上述纯化处理工序中，从上述石英玻璃夹具中除去杂质，其中包括净化处理工艺，其中石英玻璃夹具在包含卤素元素的气氛中在温度范围内进行纯化处理该区域高于规定温度。

7. 发明授权

US06723386B2 Fluororesin-coated quartz glass jig and method for producing the same 有权
标题翻译：含有氟树脂的石英玻璃夹具及其制造方法
公开(公告)号：US06723386B2
公开(公告)日：2004-04-20
申请号：US10006827
申请日：2001-12-04
申请人： Kyoichi Inaki , Itsuo Araki
发明人： Kyoichi Inaki , Itsuo Araki
IPC分类号： B05D300
CPC分类号： C03C17/32 , Y10T428/3154
摘要： An object of the present invention is to provide a fluororesin-coated quartz glass jig free from peeling off of fluororesin coating on using hydrofluoric acid or from generating particles due to the etching of quartz glass, while yet preventing the generation of chipping by relaxing the impact imposed on the quartz glass by silicon wafers. It also is an object of the present invention to provide a production method of the fluororesin-coated quartz glass jig. The object above is achieved by a fluororesin-coated quartz glass jig the surface thereof is wholly covered with a pinhole-free fluororesin coating, and by a method for producing the same.
摘要翻译：本发明的目的是提供一种氟树脂涂覆的石英玻璃夹具，其在使用氢氟酸时不会剥离氟树脂涂层或由于石英玻璃的蚀刻而产生颗粒，同时通过放松冲击来防止产生碎屑通过硅晶片施加在石英玻璃上。本发明的目的还在于提供一种氟树脂被覆石英玻璃夹具的制造方法。上述目的是通过氟树脂涂覆的石英玻璃夹具实现的，其表面完全被无针孔氟树脂涂层覆盖，并且通过其制造方法。

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