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    • 4. 发明授权
    • Method for fabricating a thin film transistor using APCVD
    • 使用APCVD制造薄膜晶体管的方法
    • US5627089A
    • 1997-05-06
    • US281926
    • 1994-07-28
    • Jeong H. KimEui Y. Oh
    • Jeong H. KimEui Y. Oh
    • C23C16/56H01L21/205H01L21/336H01L29/423H01L29/786H01L21/84H01L21/265
    • H01L29/66757C23C16/56H01L21/0242H01L21/02422H01L21/0245H01L21/02532H01L21/0262H01L29/42384H01L29/66765H01L29/78618H01L29/78666H01L29/78669
    • This invention relates to a method for fabricating a thin film transistor used for LCD which can improve performance and productivity of an element by forming it with atmospheric pressure CVD method including processes for forming a gate electrode having sloped sides on an insulation substrate, forming a gate insulation film a semiconductor layer and a channel protection layer successively with atmospheric pressure chemical vapor deposition method on all over the insulation substrate, patterning the channel protection layer such that the channel protection layer is to have a narrower pattern width than the pattern width of the gate electrode remaining the channel protection layer only on the semiconductor layer over the gate electrode, forming an impurity injected semiconductor layer for making resistive contact by injecting impurities into the semiconductor layer using the channel protection layer as a mask, and forming source and drain electrodes over the channel protection layer, the impurity injected semiconductor layer and the gate insulation film so that upper surface of the channel protection layer between them can be exposed.
    • 本发明涉及一种用于制造用于LCD的薄膜晶体管的方法,其可以通过用大气压CVD法形成元件的性能和生产率来提高元件的性能和生产率,该方法包括在绝缘基板上形成具有倾斜侧面的栅电极的工艺,形成栅极 绝缘膜在半导体层和沟道保护层上连续地用大气压化学气相沉积法遍及绝缘基板,图案化沟道保护层,使得沟道保护层具有比栅极的图案宽度更窄的图案宽度 电极仅在栅电极上的半导体层上保留沟道保护层,通过使用沟道保护层作为掩模,通过将杂质注入到半导体层中,形成用于形成电阻接触的杂质注入的半导体层,并在其上形成源极和漏极 通道保护层, e杂质注入的半导体层和栅极绝缘膜,使得它们之间的沟道保护层的上表面可以暴露。
    • 6. 发明授权
    • Picture-out-picture control apparatus and method thereof
    • 画外控制装置及其方法
    • US5331349A
    • 1994-07-19
    • US22624
    • 1993-02-25
    • Jeong H. Kim
    • Jeong H. Kim
    • H04N5/265H04N5/45H04N7/01
    • H04N7/0122H04N21/4316H04N21/440263H04N21/8153H04N5/45
    • A method and an apparatus for converting a video signal having a predetermined aspect ratio into a signal adapted for a television receiver having a wider aspect ratio. An analog to digital converter converts the received video signal into a digital signal. A main picture processor converts the video signal of the first aspect ratio into a main screen of the television receiver. A picture-out-picture processor converts the video signal having the first aspect ratio into at least one picture-out-picture screen of the television receiver. A multiplexed picture formation portion multiplexes the video signals for the main and picture-out-picture screens into a video signal having the second aspect ratio appropriate for the television receiver. A control signal generator controls the picture-out-picture processor and the multiplexed picture formation portion. When an NTSC broadcast is displayed on the television receiver having a 16-to-9 aspect ratio, the pictures are prevented from being spread to the left and right sides of the screen. Utilization of the POP screens facilitates search or comparison of the important pictures when watching the TV.
    • 一种用于将具有预定宽高比的视频信号转换成适用于具有更宽纵横比的电视接收机的信号的方法和装置。 模数转换器将接收到的视频信号转换为数字信号。 主画面处理器将第一宽高比的视频信号转换成电视接收机的主画面。 画面处理器将具有第一宽高比的视频信号转换成电视接收机的至少一个画面画面屏幕。 多路复用图像形成部分将用于主图像和图像画面屏幕的视频信号复用到具有适合于电视接收机的第二宽高比的视频信号中。 控制信号发生器控制画外处理器和复用图像形成部分。 当在具有16到9宽高比的电视接收机上显示NTSC广播时,防止图像扩展到屏幕的左侧和右侧。 使用POP屏幕便于在观看电视时搜索或比较重要的图片。
    • 8. 发明授权
    • Thin film transistor and method of making the same
    • 薄膜晶体管及其制作方法
    • US5396083A
    • 1995-03-07
    • US80237
    • 1993-06-23
    • Jeong H. KimUi Y. Oh
    • Jeong H. KimUi Y. Oh
    • G02F1/136G02F1/1368H01L21/336H01L29/78H01L29/786H01L27/01H01L27/02H01L27/12
    • H01L29/78696H01L29/6675
    • A thin film transistor and a method of making the same. The TFT comprises: an insulation substrate; a first TFT, the first TFT including a first source electrode and a first drain electrode formed on the insulation substrate, a first active layer formed so that it is contacted with the first source electrode and the first drain electrode and a common gate electrode formed through an insulation layer on the first source electrode, the first drain electrode and the first active layer; and a second TFT, the second TFT including the common gate electrode, a second active layer formed through an insulation layer on the common gate electrode, a second source electrode and a second drain electrode formed on the second active layer and be contacted with the first source electrode and the first drain electrode at a portion thereof.
    • 薄膜晶体管及其制造方法。 TFT包括:绝缘基板; 第一TFT,第一TFT包括形成在绝缘基板上的第一源电极和第一漏电极,形成为与第一源电极和第一漏电极接触的第一有源层和通过 第一源电极,第一漏电极和第一有源层上的绝缘层; 和第二TFT,第二TFT包括公共栅电极,通过共栅极上的绝缘层形成的第二有源层,形成在第二有源层上的第二源电极和第二漏电极,并与第一TFT 源电极和第一漏电极。