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1. 发明授权

US10062469B2 Transparent conductive articles 有权
公开(公告)号：US10062469B2
公开(公告)日：2018-08-28
申请号：US13540315
申请日：2012-07-02
申请人： Jitendra S. Goela , Nathaniel E. Brese
发明人： Jitendra S. Goela , Nathaniel E. Brese
IPC分类号： B32B9/00 , H01B1/06 , H01B1/04
CPC分类号： H01B1/06 , H01B1/04 , Y10T428/30
摘要： Articles with graphene are selectively transparent to electromagnetic radiation. The articles transmit electromagnetic radiation in the infrared and visible light bands while inhibiting incident radio frequency radiation. The articles have high electrical conductivity and may be used in windows and domes.

2. 发明授权

US09410238B2 Method of making durable articles 有权
标题翻译：制作耐用品的方法
公开(公告)号：US09410238B2
公开(公告)日：2016-08-09
申请号：US12886271
申请日：2010-09-20
申请人： Jitendra S. Goela , Heather A. G. Stern
发明人： Jitendra S. Goela , Heather A. G. Stern
IPC分类号： C23C14/34 , C23C14/54 , C23C14/50 , C23C14/08 , C23C14/35 , G02B1/10
CPC分类号： C23C14/34 , C23C14/081 , C23C14/3485 , C23C14/357 , C23C14/505 , C23C14/542 , G02B1/10 , G02B1/105 , G02B1/14 , Y10T428/24967 , Y10T428/26 , Y10T428/263
摘要： Optical articles of zinc sulfide and zinc selenide with thick coatings of alumina are disclosed. The alumina coatings are deposited on the zinc sulfide and zinc selenide by a microwave assisted magnetron sputtering. In addition to alumina coatings, the optical articles may also include various polymer coatings.
摘要翻译：公开了具有厚氧化铝涂层的硫化锌和硒化锌的光学制品。氧化铝涂层通过微波辅助磁控溅射沉积在硫化锌和硒化锌上。除了氧化铝涂层之外，光学制品还可以包括各种聚合物涂层。

3. 发明授权

US08613899B2 Apparatus and method for producing free-standing materials 有权
标题翻译：用于生产独立材料的装置和方法
公开(公告)号：US08613899B2
公开(公告)日：2013-12-24
申请号：US13449126
申请日：2012-04-17
申请人： Heather A. G. Stern , Vincent DiFilippo , Jitendra S. Goela , Michael A. Pickering , Hua Bai , Debashis Chakraborty , Hangyao Wang
发明人： Heather A. G. Stern , Vincent DiFilippo , Jitendra S. Goela , Michael A. Pickering , Hua Bai , Debashis Chakraborty , Hangyao Wang
IPC分类号： B01J19/00 , C01B17/00 , C01B19/00 , H01L21/00
CPC分类号： B05B7/26 , B01F3/02 , B01F5/0256 , B01F13/1016 , C23C14/0629 , C23C14/228 , C23C14/564 , C23C16/01 , C23C16/306 , C23C16/403 , C23C16/4401 , C23C16/45512
摘要： An apparatus includes a manifold with a chamber for mixing multiple reactants. Gases are jetted into the manifold by a plurality of inlet injectors. The inlet injectors are arranged such that the gases passing into the manifold impinge on each other at a common point to form a mixture. The mixture passes through a plurality of holes in one side of the manifold into a deposition chamber where the mixture of gases impinges on additional gases at a common point to provide a reaction resulting in deposition of solid materials in the deposition chamber. The solid materials are free-standing.
摘要翻译：一种装置包括具有用于混合多个反应物的室的歧管。气体通过多个入口喷射器喷射到歧管中。入口喷射器被布置成使得进入歧管的气体在共同点处彼此撞击以形成混合物。混合物通过歧管一侧的多个孔进入沉积室，其中气体混合物在共同点撞击另外的气体以提供反应，从而在沉积室中沉积固体材料。固体材料是独立的。

4. 发明授权

US08142913B2 Polycrystalline monolithic magnesium aluminate spinels 有权
标题翻译：多晶单片铝酸镁尖晶石
公开(公告)号：US08142913B2
公开(公告)日：2012-03-27
申请号：US12229745
申请日：2008-08-26
申请人： Jitendra S. Goela , Heather A. G. Stern
发明人： Jitendra S. Goela , Heather A. G. Stern
IPC分类号： B32B27/32 , B32B15/01 , B32B9/00 , B32B19/00 , C04B35/00 , C04B35/03
CPC分类号： C23C16/403 , C04B35/443 , C04B35/62218 , C04B2235/786 , C04B2235/95 , Y10T428/12667
摘要： Polycrystalline monolithic magnesium aluminate spinels are disclosed. The polycrystalline monolithic magnesium aluminate spinels have small grain sizes and may be deposited on substrates as thick one-piece deposits. The polycrystalline monolithic magnesium aluminate spinels may be prepared and deposited by chemical vapor deposition. Articles made with the polycrystalline monolithic magnesium aluminate spinels also are disclosed.
摘要翻译：公开了多晶单片铝酸镁尖晶石。多晶单片铝酸镁尖晶石具有小的晶粒尺寸，并且可以作为厚的一片沉积物沉积在基底上。多晶单片铝酸镁尖晶石可通过化学气相沉积制备和沉积。还公开了用多晶单片铝酸镁尖晶石制成的制品。

5. 发明授权

US07927915B2 Low resistivity silicon carbide 有权
标题翻译：低电阻率碳化硅
公开(公告)号：US07927915B2
公开(公告)日：2011-04-19
申请号：US10872746
申请日：2004-06-21
申请人： Jitendra S. Goela , Michael A. Pickering
发明人： Jitendra S. Goela , Michael A. Pickering
IPC分类号： H01L21/00
CPC分类号： C23C16/01 , C23C16/325
摘要： An opaque, low resistivity silicon carbide and a method of making the opaque, low resistivity silicon carbide. The opaque, low resistivity silicon carbide is doped with a sufficient amount of nitrogen to provide the desired properties of the silicon carbide. The opaque, low resistivity silicon carbide is a free-standing bulk material that may be machined to form furniture used for holding semi-conductor wafers during processing of the wafers. The opaque, low resistivity silicon carbide is opaque at wavelengths of light where semi-conductor wafers are processed. Such opaqueness provides for improved semi-conductor wafer manufacturing. Edge rings fashioned from the opaque, low resistivity silicon carbide can be employed in RTP chambers.
摘要翻译：不透明，低电阻率碳化硅和制造不透明低电阻率碳化硅的方法。不透明的低电阻率碳化硅被掺杂足够量的氮以提供所需的碳化硅性质。不透明的低电阻率碳化硅是一种独立的散装材料，其可以被机加工以形成用于在晶片加工期间保持半导体晶片的家具。不透明的低电阻率碳化硅在处理半导体晶片的光的波长处是不透明的。这种不透明度提供了改进的半导体晶片制造。由不透明，低电阻率碳化硅形成的边缘环可用于RTP室。

6. 发明授权

US5374412A Highly polishable, highly thermally conductive silicon carbide 失效
标题翻译：高度可抛光，高导热性的碳化硅
公开(公告)号：US5374412A
公开(公告)日：1994-12-20
申请号：US959880
申请日：1992-10-13
申请人： Michael A. Pickering , Jitendra S. Goela , Lee E. Burns
发明人： Michael A. Pickering , Jitendra S. Goela , Lee E. Burns
IPC分类号： C01B31/36 , B28B21/42 , C04B35/565 , C04B35/571 , C23C16/00 , C23C16/01 , C23C16/32 , C23C16/44 , G11B5/73 , G11B5/84
CPC分类号： C23C16/01 , C04B35/571 , C23C16/325 , C23C16/4404
摘要： Silicon carbide is produced by chemical vapor deposition at temperatures from 1340.degree.-1380.degree. C., deposition chamber pressures of 180-200 torr, H.sub.2 /methyltrichlorosilane ratio of 4-10 and deposition rate of 1-2 .mu.m/min. Furthermore, H.sub.2 supplied as a part of the gas stream contains less than about 1 part per million (ppm) O.sub.2 gas, and various means are provided to exclude particulate material from the deposition chamber. The silicon carbide is polishable to
摘要翻译：碳化硅通过化学气相沉积在1340°-1380℃，沉积室压力为180-200托，H 2 /甲基三氯硅烷比为4-10，沉积速率为1-2微米/分钟的条件下生产。此外，作为气流的一部分供应的H2含有少于约百万分之一（ppm）O 2气体，并且提供各种装置以从沉积室排除颗粒材料。碳化硅可以在Talystep机械剖析仪上测得的<5 ANGSTROM RMS，具有至少约300W / mk的导热系数。碳化硅特别适用于需要高抛光性和导热性的应用，例如硬盘驱动器和头盘组件的读/写头以及需要非常高的抛光的光学装置。

7. 发明授权

US09228257B2 Quality multi-spectral zinc sulfide 有权
公开(公告)号：US09228257B2
公开(公告)日：2016-01-05
申请号：US13446272
申请日：2012-04-13
申请人： Jitendra S. Goela , Nathaniel E. Brese
发明人： Jitendra S. Goela , Nathaniel E. Brese
IPC分类号： C23C16/30 , C01G9/08 , C04B35/547 , C04B35/645 , C23C14/06 , C23C14/35 , G02B1/10 , G02B1/02
CPC分类号： G02B1/14 , C01G9/08 , C04B35/547 , C04B35/6455 , C04B2235/6565 , C04B2235/6567 , C04B2235/72 , C04B2235/9653 , C23C14/0629 , C23C14/357 , C23C16/306 , G02B1/02 , G02B1/10
摘要： Low scatter water clear zinc sulfide with reduced metal contamination is prepared by coating a chuck which holds zinc sulfide and machining the zinc sulfide with uncoated particles. An inert foil is cleaned with an acid cleaning method and also cleaning the zinc sulfide. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a low scatter water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes.

8. 发明申请

US20120302141A1 QUALITY MULTI-SPECTRAL ZINC SULFIDE 有权
标题翻译：质量多光谱锌锡
公开(公告)号：US20120302141A1
公开(公告)日：2012-11-29
申请号：US13446272
申请日：2012-04-13
申请人： Jitendra S. GOELA , Nathaniel E. BRESE
发明人： Jitendra S. GOELA , Nathaniel E. BRESE
IPC分类号： B24B1/00
CPC分类号： G02B1/14 , C01G9/08 , C04B35/547 , C04B35/6455 , C04B2235/6565 , C04B2235/6567 , C04B2235/72 , C04B2235/9653 , C23C14/0629 , C23C14/357 , C23C16/306 , G02B1/02 , G02B1/10
摘要： Low scatter water clear zinc sulfide with reduced metal contamination is prepared by coating a chuck which holds zinc sulfide and machining the zinc sulfide with uncoated particles. An inert foil is cleaned with an acid cleaning method and also cleaning the zinc sulfide. The zinc sulfide is wrapped in the inert foil and then treated by a HIP process to provide a low scatter water-clear zinc sulfide. The low scatter water-clear zinc sulfide may be used in articles such as windows and domes.
摘要翻译：通过涂覆保持硫化锌并用未涂覆的颗粒加工硫化锌的卡盘来制备具有减少的金属污染物的低散射水分透明的硫化锌。用酸性清洁方法清洁惰性箔，并清洗硫化锌。将硫化锌包裹在惰性箔中，然后通过HIP法处理，以提供低散射的水清净硫化锌。低散射水清净硫化锌可用于窗户和圆顶等物品中。

9. 发明申请

US20090061254A1 Polycrystalline monolithic magnesium aluminate spinels 有权
标题翻译：多晶单片铝酸镁尖晶石
公开(公告)号：US20090061254A1
公开(公告)日：2009-03-05
申请号：US12229745
申请日：2008-08-26
申请人： Jitendra S. Goela , Heather A. G. Stern
发明人： Jitendra S. Goela , Heather A. G. Stern
IPC分类号： B22F7/02 , C23C16/06 , B05D5/12 , C25D5/54 , C23C14/34 , B32B5/16
CPC分类号： C23C16/403 , C04B35/443 , C04B35/62218 , C04B2235/786 , C04B2235/95 , Y10T428/12667
摘要： Polycrystalline monolithic magnesium aluminate spinels are disclosed. The polycrystalline monolithic magnesium aluminate spinels have small grain sizes and may be deposited on substrates as thick one-piece deposits. The polycrystalline monolithic magnesium aluminate spinels may be prepared and deposited by chemical vapor deposition. Articles made with the polycrystalline monolithic magnesium aluminate spinels also are disclosed.
摘要翻译：公开了多晶单片铝酸镁尖晶石。多晶单片铝酸镁尖晶石具有小的晶粒尺寸，并且可以作为厚的一片沉积物沉积在基底上。多晶单片铝酸镁尖晶石可通过化学气相沉积制备和沉积。还公开了用多晶单片铝酸镁尖晶石制成的制品。

10. 发明授权

US07438884B2 Silicon carbide with high thermal conductivity 有权
标题翻译：具有高导热性的碳化硅
公开(公告)号：US07438884B2
公开(公告)日：2008-10-21
申请号：US10909667
申请日：2004-08-02
申请人： Nathaniel E. Brese , Jitendra S. Goela , Michael A. Pickering
发明人： Nathaniel E. Brese , Jitendra S. Goela , Michael A. Pickering
IPC分类号： C01B31/36
CPC分类号： C23C16/325 , C04B35/565
摘要： A chemical vapor deposited, β phase polycrystalline silicon carbide having a high thermal conductivity and reduced stacking faults. The silicon carbide is synthesized under specific conditions using hydrogen gas and methyltrichlorosilane gas as reactants. The thermal conductivity of the silicon carbide is sufficiently high such that it can be employed as parts of apparatus and components of electrical devices where a high heat load is generated. Such components may include active thermoelectric coolers, heat sinks and fans.
摘要翻译：化学气相沉积，β相多晶碳化硅具有高导热性和减少堆垛层错。使用氢气和甲基三氯硅烷气体作为反应物，在特定条件下合成碳化硅。碳化硅的热导率足够高，使得其可以用作产生高热负荷的电气装置的装置和部件的部件。这些组件可以包括有源热电冷却器，散热器和风扇。

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