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    • 4. 发明授权
    • High PH slurry for chemical mechanical polishing of copper
    • 高PH浆料用于化学机械抛光铜
    • US06825117B2
    • 2004-11-30
    • US09461158
    • 1999-12-14
    • Anne E. MillerA. Daniel FellerKenneth Cadien
    • Anne E. MillerA. Daniel FellerKenneth Cadien
    • H01L21302
    • H01L21/3212C09K3/1463H01L21/7684
    • A slurry for copper polishing has a pH between 7.5 and 12. In a particular embodiment of the present invention, a slurry for polishing copper has a pH between 8 and 11.5, and includes a SiO2 abrasive, a (NH4)2S2O8 oxidizer, a benzotriazole corrosion inhibitor, and a K3PO4/K2HPO4 buffer. A copper polish slurry, in accordance with the present invention, operates with a high pH of greater than approximately 7.5. In this range the slurry has a low static etch due to formation of a robust, protective layer. This slurry may additionally have S2O8−2 or Fe(CN)6−3 as an oxidizer and can thus offer a high polish rate on the order of 7,000 to 10,000 angstroms per minute which does not decrease significantly during polishing. Such an inventive slurry offers a wide CMP process window such that the slurry and process parameters can be optimized to yield low recess, erosion, and dishing on patterned wafers.
    • 用于铜抛光的浆料的pH为7.5至12.在本发明的一个具体实施方案中,用于抛光铜的浆料的pH为8至11.5,并且包括SiO 2研磨剂,(NH 4)2 S 2 O 8氧化剂,苯并三唑 缓蚀剂和K3PO4 / K2HPO4缓冲液。 根据本发明的铜抛光浆料以大于约7.5的高pH操作。 在该范围内,由于形成坚固的保护层,浆料具有低静态蚀刻。 该浆液可另外具有作为氧化剂的S2O8或Fe(CN)6-3,因此能够提供每分钟7000至10,000埃的高抛光速率,这在抛光过程中不会显着降低。 这种本发明的浆料提供了广泛的CMP工艺窗口,使得浆料和工艺参数可以被优化以在图案化的晶片上产生低的凹陷,侵蚀和凹陷。