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    • 9. 发明申请
    • SURFACE PROTECTIVE SHEET FOR USE IN WAFER BACK GRINDING AND PROCESS FOR PRODUCING SEMICONDUCTOR CHIP
    • 用于回磨的表面保护片和用于生产半导体芯片的工艺
    • WO2003043076A2
    • 2003-05-22
    • PCT/JP2002/011566
    • 2002-11-06
    • LINTEC CORPORATIONIZUMI, TatsuyaTAKAHASHI, KazuhiroSENOO, HideoEBE, Kazuyoshi
    • IZUMI, TatsuyaTAKAHASHI, KazuhiroSENOO, HideoEBE, Kazuyoshi
    • H01L21/68
    • B24B55/00B24B7/228H01L21/6835H01L21/6836H01L2221/68327H01L2221/6834
    • Disclosed herein is a surface protective sheet for semiconductor wafer, used in wafer back grinding during a process comprising providing a wafer of predetermined thickness having a surface furnished with circuits and a back, forming grooves of a cut depth smaller than the thickness of the wafer from the wafer surface and grinding the back of the wafer so that the thickness of the wafer is reduced and so that the wafer is finally divided into individual semiconductor chips, which surface protective sheet comprises a base material and, superimposed thereon, a pressure sensitive adhesive layer, the base material comprising two or more constituent layers which include a first constituent layer of 10 to 300 μm thickness exhibiting a Young's modulus of 3000 to 30,000 N/m 2 , and a second constituent layer exhibiting a glass transition temperature, measured by DSC, of 70 C or below, the second constituent layer beingan outermost layer. The use of the surface protective sheet, in the so-called predicing process, not only enables maintaining a given calf interval during and after the wafer back grinding but also facilitates fitting of the stripping tape.
    • 本文公开了一种用于半导体晶片的表面保护片,用于在包括提供电路和背面的表面的预定厚度的晶片的工艺过程中的晶片背面研磨中,形成切割深度小于晶片厚度的凹槽 晶片表面并研磨晶片的背面,使得晶片的厚度减小,并且使得晶片最终分成单独的半导体芯片,该表面保护片包括基底材料并且叠加在其上的压敏粘合剂层 所述基材包含两个或多个构成层,所述构成层包括具有3000至30,000N / m 2的杨氏模量的10至300μm厚度的第一构成层,以及显示玻璃化转变温度的第二构成层,其由 DSC为70℃以下,第二构成层为最外层。 在所谓的检测过程中,使用表面保护片不仅可以在晶片背面研磨期间和之后保持给定的小腿间隔,而且有利于剥离胶带的装配。
    • 10. 发明申请
    • PROCESS FOR MANUFACTURING AN ELECTROCHEMICAL DEVICE BASED ON SELF-ALIGNMENT ELECTROLYTES ON ELECTRODES
    • 基于电极上自对准电解质的电化学设备制造工艺
    • WO2012136738A1
    • 2012-10-11
    • PCT/EP2012/056237
    • 2012-04-04
    • ACREO ABLINTEC CORPORATIONANDERSSON ERSMAN, PeterNILSSON, DavidKAWAHARA, JunKATOH, Kazuya
    • ANDERSSON ERSMAN, PeterNILSSON, DavidKAWAHARA, JunKATOH, Kazuya
    • G02F1/155H01L51/05G03F7/00
    • G02F1/155G02F1/15Y10T29/49117
    • A process for manufacturing an electrochemically active device comprising the steps of: - providing a substrate (110) comprising an electrode receiving surface portion (111) having substantially constant wetting tension throughout said electrode receiving surface portion, - providing a plurality of first electrodes (120) directly on said electrode receiving surface portion, - leaving intermediate portions (130) of said electrode receiving surface portion (111) free from said electrodes, - providing a layer of electrolyte (140) covering said plurality of first electrodes (120) and said intermediate portions (130), and - wherein wetting tension of the surfaces of the intermediate portions (130) is arranged to act more repelling on the electrolyte compared to the wetting tension of the surfaces of the plurality of first electrodes (120), whereby, the electrolyte is concentrated to the surfaces of the plurality of first electrodes (120), and the surfaces of the intermediate portions (130) are substantially free of electrolyte.
    • 一种用于制造电化学活性器件的方法,包括以下步骤: - 提供衬底(110),其包括在所述电极接收表面部分内具有基本上恒定的湿润张力的电极接收表面部分(111), - 提供多个第一电极 )直接在所述电极接收表面部分上, - 使所述电极接收表面部分(111)的中间部分(130)不含所述电极, - 提供覆盖所述多个第一电极(120)和所述电极 中间部分(130),以及 - 其中所述中间部分(130)的表面的润湿张力被布置成与所述多个第一电极(120)的表面的润湿张力相比对所述电解质起更大的排斥作用, 电解质集中到多个第一电极(120)的表面,并且中间部分(130)的表面 基本上不含电解质。