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    • 1. 发明申请
    • MUTLIPLEXER/DE-MULTIPLEXER MEMRISTIVE DEVICE
    • MUTLIPLEXER /多路复用器测量装置
    • WO2010077245A1
    • 2010-07-08
    • PCT/US2008/088583
    • 2008-12-30
    • HEWLETT-PACKARD DEVELOPMENT COMPANY, L.P.STRACHAN, John PaulFIORENTINO, Marco FiorentinoWU, Wei
    • STRACHAN, John PaulFIORENTINO, Marco FiorentinoWU, Wei
    • H01L27/115H01L21/8247H03K17/687
    • H03K17/005G11C13/0002H01L45/08H01L45/1206H01L45/14H01L45/145H01L45/146H01L45/147H03K17/007
    • A multiplexing/de-multiplexing memristive device (300) includes a memristive matrix (370) containing mobile dopants; and programming electrodes (310, 320) which apply programming electrical field such that the mobile dopants selectively form a conductive band (380) which connects a first signal electrode (330) to one of a plurality of second electrodes (350). A method for operating a multiplexing/de-multiplexing memristive device (300) includes applying a programming electrical field to achieve a first dopant configuration in a memristive matrix (370), the first dopant configuration connecting a base electrode (330) to a input/output electrode (350); conducting an electrical current from between the base electrode (330) and the input/output electrode (350); and applying a second programming electrical field to achieve a second dopant configuration, the second dopant configuration connecting the base electrode (330) to a second input/output electrode (350); and conducting an electrical current from the base electrode (330) to the second input/output electrode (360).
    • 复用/解复用忆阻器(300)包括含有移动掺杂剂的忆阻矩阵(370); 以及编程电极(310,320),其施加编程电场,使得所述移动掺杂剂选择性地形成将第一信号电极(330)连接到多个第二电极(350)中的一个的导电带(380)。 一种用于操作多路复用/解复用忆阻器件(300)的方法包括施加编程电场以实现在忆阻矩阵(370)中的第一掺杂剂配置,所述第一掺杂剂配置将基极(330)连接到输入/ 输出电极(350); 从所述基极(330)和所述输入/输出电极(350)之间传导电流; 以及施加第二编程电场以实现第二掺杂剂配置,所述第二掺杂剂配置将所述基极(330)连接到第二输入/输出电极(350); 并从基极(330)向第二输入/输出电极(360)传导电流。
    • 10. 发明授权
    • Multiplexer/de-multiplexer memristive device
    • 多路复用器/解复用器忆阻器
    • US08582344B2
    • 2013-11-12
    • US13120903
    • 2008-12-30
    • John Paul StrachanMarco FiorentinoWei Wu
    • John Paul StrachanMarco FiorentinoWei Wu
    • G11C11/34
    • H03K17/005G11C13/0002H01L45/08H01L45/1206H01L45/14H01L45/145H01L45/146H01L45/147H03K17/007
    • A multiplexing/de-multiplexing memristive device includes a memristive matrix containing mobile dopants; and programming electrodes which apply programming electrical field such that the mobile dopants selectively form a conductive band which connects a first signal electrode to one of a plurality of second electrodes. A method for operating a multiplexing/de-multiplexing memristive device includes applying a programming electrical field to achieve a first dopant configuration in a memristive matrix, the first dopant configuration connecting a base electrode to a input/output electrode; conducting an electrical current from between the base electrode and the input/output electrode; and applying a second programming electrical field to achieve a second dopant configuration, the second dopant configuration connecting the base electrode to a second input/output electrode; and conducting an electrical current from the base electrode to the second input/output electrode.
    • 复用/解复用忆阻器包括含有移动掺杂剂的忆阻矩阵; 以及编程电极,其施加编程电场,使得移动掺杂剂选择性地形成将第一信号电极连接到多个第二电极中的一个的导电带。 一种用于操作多路复用/解复用复忆器件的方法包括应用编程电场以实现忆阻矩阵中的第一掺杂剂配置,所述第一掺杂剂配置将基极连接到输入/输出电极; 从基极和输入/输出电极之间传导电流; 以及施加第二编程电场以实现第二掺杂剂配置,所述第二掺杂剂配置将所述基极连接到第二输入/输出电极; 并且从基极到第二输入/输出电极传导电流。