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1. 发明授权

US10131341B2 Bandwidth-based methodology for controlling and optimally designing a hybrid power system 有权
公开(公告)号：US10131341B2
公开(公告)日：2018-11-20
申请号：US15184978
申请日：2016-06-16
申请人： Masood Shahverdi , Michael S. Mazzola
发明人： Masood Shahverdi , Michael S. Mazzola
IPC分类号： B60L9/00 , B60L11/00 , G05D3/00 , G05D1/00 , G06F7/00 , G06F17/00 , B60W10/08 , B60W30/188 , B60L11/18 , B60W10/06 , B60K6/46 , B60W10/26 , B60W20/13 , B60W20/11
摘要： The present invention provides a novel system and method for a power management strategy for series hybrid power systems, such as for vehicles, with limited electrical energy storage capacity that distributes instantaneous power between a source of chemical energy and a small energy storage system (ESS) efficiently. The invention provides for minimizing the energy storage system while simultaneously allowing the chemical to electrical energy converter, e.g., an internal combustion motor/engine paired with an electrical generator and/or a fuel cell power source, to operate in pre-defined efficient regions of the power user's, or vehicle's, fuel efficiency map.

2. 发明授权

US08455328B2 Optically controlled silicon carbide and related wide-bandgap transistors and thyristors 有权
标题翻译：光控碳化硅和相关宽带隙晶体管和晶闸管
公开(公告)号：US08455328B2
公开(公告)日：2013-06-04
申请号：US13463031
申请日：2012-05-03
申请人： Michael S. Mazzola
发明人： Michael S. Mazzola
IPC分类号： H01L21/76
CPC分类号： H01L31/028 , H01L31/0312 , H01L31/09 , H01L31/1105 , H03K17/78 , Y10S438/917 , Y10S438/931
摘要： An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype.
摘要翻译：与用于影响电力电子设备和电路的光学控制的常规方法相比，使用光学活性材料来产生具有显着性能优点的功率器件和电路。通过用硼相关的D中心补偿浅供体来形成碳化硅光学活性材料。所得到的材料可以是n型或p型，但是当通过电磁辐射照射时能够引起持续光电导的能力与其它材料不同，其中光子能量超过光电从D激发电子所需的阈值能量 - 允许状态接近导带边缘，其从多形型到多型变化。

3. 发明授权

US07978483B2 Power conversion components, systems and methods 有权
标题翻译：电源转换组件，系统和方法
公开(公告)号：US07978483B2
公开(公告)日：2011-07-12
申请号：US12352862
申请日：2009-01-13
申请人： Michael S. Mazzola , James R. Gafford
发明人： Michael S. Mazzola , James R. Gafford
IPC分类号： H02M3/335
CPC分类号： H02M7/003 , H02M3/33569 , Y02B70/1433
摘要： Components, systems and methods for generating variable frequency AC voltage from a DC power supply are described. The components include a full-bridge (FB) parallel load resonant (PLR) converter which operates in discontinuous conduction mode. The PLR converter includes MOSFETs in an H-bridge configuration and employs a topology which minimizes inductance. The PLR converter can be coupled to a single or poly-phase bridge for use as an inverter. The inverter can be used to produce an AC sinusoidal waveform from a low voltage, high current DC power supply. Systems and techniques for modulating the output from the PLR converter to produce an AC sinusoidal waveform having desired characteristics, including frequency and voltage, are also provided. The PLR converter can also be coupled to a rectifier for use as a DC-DC converter.
摘要翻译：描述了用于从直流电源产生可变频率AC电压的组件，系统和方法。这些组件包括以不连续导通模式工作的全桥（FB）并联负载谐振（PLR）转换器。 PLR转换器包括H桥配置的MOSFET，并采用最小化电感的拓扑结构。 PLR转换器可以耦合到单相或多相桥用作逆变器。逆变器可用于从低电压，大电流直流电源产生交流正弦波形。还提供了用于调制来自PLR转换器的输出以产生具有期望特性（包括频率和电压）的AC正弦波形的系统和技术。 PLR转换器也可以耦合到整流器以用作DC-DC转换器。

4. 发明申请

US20100026370A1 HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF PREVENTING UNINTENDED CURRENT FLOW THEREIN 有权
标题翻译：正常使用开关的半桥电路及防止意外流过的方法
公开(公告)号：US20100026370A1
公开(公告)日：2010-02-04
申请号：US12557199
申请日：2009-09-10
申请人： Michael S. Mazzola , Robin L. Kelley
发明人： Michael S. Mazzola , Robin L. Kelley
IPC分类号： H03K17/56
CPC分类号： H03K17/164 , H02M1/08 , H03K17/08122 , H03K17/08128 , H03K17/162 , H03K17/6871 , H03K2017/6875 , H03K2217/0036 , Y02B70/1483
摘要： A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETS) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.
摘要翻译：描述了一种使包含正常在半导体电路上形成的半桥电路的方法，该开关本身就不会受到不受控制的电流的影响，因此开关如结型场效应晶体管（JFETS）。开关可以由碳化硅或硅制成。这里描述的方法允许在开关中使用更好的正常运行来代替集成功率模块中的常闭开关，从而提高集成功率模块的效率，尺寸，重量和成本。如本文所述，可以将电源添加到栅极驱动器电路。电源可以是自启动和自振荡，同时能够从通过栅极驱动器向正常开关提供电势的端子导出其所有源能量。然后，常开开关的端子特性可以与电源的输入到输出特性协调。

5. 发明授权

US07602228B2 Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein 有权
标题翻译：通常在开关上使用的半桥电路以及防止其中不期望的电流流动的方法
公开(公告)号：US07602228B2
公开(公告)日：2009-10-13
申请号：US11802388
申请日：2007-05-22
申请人： Michael S. Mazzola , Robin L. Kelley
发明人： Michael S. Mazzola , Robin L. Kelley
IPC分类号： H03K17/56
CPC分类号： H03K17/164 , H02M1/08 , H03K17/08122 , H03K17/08128 , H03K17/162 , H03K17/6871 , H03K2017/6875 , H03K2217/0036 , Y02B70/1483
摘要： A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.
摘要翻译：描述了一种用于使包含正常在半导体电路上形成的半桥电路的方法，该半桥电路本身就不会受到不受控制的电流的安全影响，因此开关如结型场效应晶体管（JFET）。开关可以由碳化硅或硅制成。这里描述的方法允许在开关中使用更好的正常运行来代替集成功率模块中的常闭开关，从而提高集成功率模块的效率，尺寸，重量和成本。如本文所述，可以将电源添加到栅极驱动器电路。电源可以是自启动和自振荡，同时能够从通过栅极驱动器向正常开关提供电势的端子导出其所有源能量。然后，常开开关的端子特性可以与电源的输入到输出特性协调。

6. 发明授权

US07294860B2 Monolithic vertical junction field effect transistor and Schottky barrier diode fabricated from silicon carbide and method for fabricating the same 有权
标题翻译：由碳化硅制成的单片垂直结型场效应晶体管和肖特基势垒二极管及其制造方法
公开(公告)号：US07294860B2
公开(公告)日：2007-11-13
申请号：US11176625
申请日：2005-07-08
申请人： Michael S. Mazzola , Joseph N. Merrett
发明人： Michael S. Mazzola , Joseph N. Merrett
IPC分类号： H01L31/0312 , H01L27/095 , H01L29/47 , H01L29/812 , H01L31/07
CPC分类号： H01L29/872 , H01L27/0641 , H01L27/0814 , H01L27/098 , H01L29/0619 , H01L29/0661 , H01L29/1608 , H01L29/6606 , H01L29/66068 , H01L29/8083
摘要： A switching element combining a self-aligned, vertical junction field effect transistor with etched-implanted gate and an integrated antiparallel Schottky barrier diode is described. The anode of the diode is connected to the source of the transistor at the device level in order to reduce losses due to stray inductances. The SiC surface in the SBD anode region is conditioned through dry etching to achieve a low Schottky barrier height so as to reduce power losses associated with the turn on voltage of the SBD.
摘要翻译：描述了组合自对准垂直结型场效应晶体管与蚀刻注入栅极和集成反并联肖特基势垒二极管的开关元件。二极管的阳极在器件级连接到晶体管的源极，以减少杂散电感引起的损耗。 SBD阳极区域中的SiC表面通过干蚀刻进行调理，以实现低肖特基势垒高度，从而降低与SBD的导通电压相关的功率损耗。

7. 发明授权

US06767783B2 Self-aligned transistor and diode topologies in silicon carbide through the use of selective epitaxy or selective implantation 有权
标题翻译：通过使用选择性外延或选择性注入在碳化硅中自对准晶体管和二极管拓扑
公开(公告)号：US06767783B2
公开(公告)日：2004-07-27
申请号：US10193108
申请日：2002-07-12
申请人： Jeffrey B. Casady , Geoffrey E. Carter , Yaroslav Koshka , Michael S. Mazzola , Igor Sankin
发明人： Jeffrey B. Casady , Geoffrey E. Carter , Yaroslav Koshka , Michael S. Mazzola , Igor Sankin
IPC分类号： H01L218249
CPC分类号： H01L29/6606 , H01L29/1608 , H01L29/66068 , H01L29/732 , H01L29/739
摘要： A method of making vertical diodes and transistors in SiC is provided. The method according to the invention uses a mask (e.g., a mask that has been previously used for etching features into the device) for selective epitaxial growth or selective ion implantation. In this manner, the gate and base regions of static induction transistors and bipolar junction transistors can be formed in a self-aligned process. A method of making planar diodes and planar edge termination structures (e.g., guard rings) is also provided.
摘要翻译：提供了一种在SiC中制造垂直二极管和晶体管的方法。根据本发明的方法使用用于选择性外延生长或选择性离子注入的掩模（例如，先前已经用于蚀刻特征的掩模到设备中）。以这种方式，静态感应晶体管和双极结型晶体管的栅极和基极区域可以以自对准工艺形成。还提供了制造平面二极管和平面边缘终止结构（例如保护环）的方法。

8. 发明授权

US5374589A Process of making a bistable photoconductive component 失效
标题翻译：制造双稳态光电导元件的工艺
公开(公告)号：US5374589A
公开(公告)日：1994-12-20
申请号：US223350
申请日：1994-04-05
申请人： Randy A. Roush , Michael S. Mazzola , David C. Stoudt
发明人： Randy A. Roush , Michael S. Mazzola , David C. Stoudt
IPC分类号： G02B6/12 , G02B6/134 , H01L21/22 , H01L21/322 , H01L31/0304 , H01L31/08 , H01L31/18 , H01L21/223
CPC分类号： H01L31/03042 , G02B6/1342 , H01L21/2215 , H01L21/3228 , H01L31/08 , H01L31/1864 , G02B2006/12169 , Y02E10/544 , Y02P70/521 , Y10S438/90 , Y10S438/919
摘要： Semi-insulating gallium arsenide wafers manufactured with varying silicon nsity shallow donors are copper compensated by heating to temperature of at least 550.degree. C. to thermally diffuse the copper into the wafers and thereby provide deep copper acceptors in the wafer. Higher annealing temperatures are employed for higher concentrations of silicon in the wafers and the thermal diffusion is accomplished in the presence of copper, and in some instances, in the presence of varying quantities of arsenic. The copper compensated, silicon doped, gallium arsenide wafers obtained have the electrical property characteristic capability of being used as photoconductive switching components. In one aspect of the invention the silicon doped gallium arsenide wafer is sealed in a quartz ampoule in the presence of solid copper and solid arsenic and heated to the annealing temperature. In another aspect of the invention, the copper and arsenic are flowed as vapors over the silicon doped gallium arsenide wafer disposed in a reaction tube within a diffusion furnace, while the wafer is heated to the annealing temperature.
摘要翻译：用不同的硅密度浅供体制造的半绝缘砷化镓晶片通过加热到至少550℃的温度进行铜补偿，以将铜热扩散到晶片中，从而在晶片中提供深铜受主。较高的退火温度用于晶片中较高浓度的硅，并且热扩散在铜的存在下实现，并且在一些情况下，在存在不同量的砷的情况下完成。获得的铜补偿的硅掺杂砷化镓晶片具有用作光电导开关元件的电性能特性能力。在本发明的一个方面，将硅掺杂的砷化镓晶片在固体铜和固体砷的存在下密封在石英安瓿中并加热至退火温度。在本发明的另一方面，铜和砷作为蒸汽流过布置在扩散炉内的反应管中的硅掺杂砷化镓晶片上，同时将晶片加热至退火温度。

9. 发明申请

US20120214275A1 OPTICALLY CONTROLLED SILICON CARBIDE AND RELATED WIDE-BANDGAP TRANSISTORS AND THYRISTORS 有权
标题翻译：光控碳化硅和相关宽带晶体管和晶体管
公开(公告)号：US20120214275A1
公开(公告)日：2012-08-23
申请号：US13463031
申请日：2012-05-03
申请人： Michael S. MAZZOLA
发明人： Michael S. MAZZOLA
IPC分类号： H01L31/18
CPC分类号： H01L31/028 , H01L31/0312 , H01L31/09 , H01L31/1105 , H03K17/78 , Y10S438/917 , Y10S438/931
摘要： An optically active material is used to create power devices and circuits having significant performance advantages over conventional methods for affecting optical control of power electronics devices and circuits. A silicon-carbide optically active material is formed by compensating shallow donors with the boron related D-center. The resulting material can be n-type or p-type but it is distinguished from other materials by the ability to induce persistent photoconductivity in it when illuminated by electromagnetic radiation with a photon energy in excess of the threshold energy required to photoexcite electrons from the D-center to allowed states close to the conduction band edge, which varies from polytype to polytype.
摘要翻译：与用于影响电力电子设备和电路的光学控制的常规方法相比，使用光学活性材料来产生具有显着性能优点的功率器件和电路。通过用硼相关的D中心补偿浅供体来形成碳化硅光学活性材料。所得到的材料可以是n型或p型，但是当通过电磁辐射照射时能够引起持续光电导的能力与其它材料不同，其中光子能量超过光电从D激发电子所需的阈值能量 - 允许状态接近导带边缘，其从多形型到多型变化。

10. 发明申请

US20110121884A1 HALF-BRIDGE CIRCUITS EMPLOYING NORMALLY ON SWITCHES AND METHODS OF PREVENTING UNINTENDED CURRENT FLOW THEREIN 有权
标题翻译：正常使用开关的半桥电路及防止意外流过的方法
公开(公告)号：US20110121884A1
公开(公告)日：2011-05-26
申请号：US13021132
申请日：2011-02-04
申请人： Michael S. MAZZOLA , Robin L. KELLEY
发明人： Michael S. MAZZOLA , Robin L. KELLEY
IPC分类号： H03K17/687
CPC分类号： H03K17/164 , H02M1/08 , H03K17/08122 , H03K17/08128 , H03K17/162 , H03K17/6871 , H03K2017/6875 , H03K2217/0036 , Y02B70/1483
摘要： A method for rendering a half-bridge circuit containing normally on switches such as junction field effect transistors (JFETs) inherently safe from uncontrolled current flow is described. The switches can be made from silicon carbide or from silicon. The methods described herein allow for the use of better performing normally on switches in place of normally off switches in integrated power modules thereby improving the efficiency, size, weight, and cost of the integrated power modules. As described herein, a power supply can be added to the gate driver circuitry. The power supply can be self starting and self oscillating while being capable of deriving all of its source energy from the terminals supplying electrical potential to the normally on switch through the gate driver. The terminal characteristics of the normally on switch can then be coordinated to the input-to-output characteristics of the power supply.
摘要翻译：描述了一种用于使包含正常在半导体电路上形成的半桥电路的方法，该半桥电路本身就不会受到不受控制的电流的安全影响，因此开关如结型场效应晶体管（JFET）。开关可以由碳化硅或硅制成。这里描述的方法允许在开关中使用更好的正常运行来代替集成功率模块中的常闭开关，从而提高集成功率模块的效率，尺寸，重量和成本。如本文所述，可以将电源添加到栅极驱动器电路。电源可以是自启动和自振荡，同时能够从通过栅极驱动器向正常开关提供电势的端子导出其所有源能量。然后，常开开关的端子特性可以与电源的输入到输出特性协调。

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