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    • 2. 发明授权
    • Semiconductor wafer and manufacturing method thereof
    • 半导体晶片及其制造方法
    • US09076750B2
    • 2015-07-07
    • US14005975
    • 2012-04-03
    • Michito Sato
    • Michito Sato
    • H01L29/06H01L21/78H01L29/34H01L21/02
    • H01L29/34H01L21/0201H01L21/02024
    • A semiconductor wafer having sag formed at an outer periphery at the time of polishing, wherein a displacement of the semiconductor wafer in a thickness direction is 100 nm or less between a center and a outer peripheral sag start position of the semiconductor wafer, and the center of the semiconductor wafer has a convex shape, an amount of outer peripheral sag of the semiconductor wafer is 100 nm or less, and the outer peripheral sag start position is away from an outer peripheral portion of the semiconductor wafer toward the center or 20 mm or more away from an outer peripheral end of the semiconductor wafer toward the center, the outer peripheral portion being a measurement target of ESFQR.
    • 在抛光时在外周形成有凹陷的半导体晶片,其中半导体晶片在厚度方向上的位移在半导体晶片的中心和外周起始位置之间为100nm以下,中心 半导体晶片的外周凹陷量为100nm以下,外周凹陷开始位置远离半导体晶片的外周部朝向中央或20mm,或者 更远离半导体晶片的外周端朝向中心,外周部​​是ESFQR的测量对象。
    • 5. 发明申请
    • SEMICONDUCTOR WAFER AND MANUFACTURING METHOD THEREOF
    • 半导体晶圆及其制造方法
    • US20140008768A1
    • 2014-01-09
    • US14005975
    • 2012-04-03
    • Michito Sato
    • Michito Sato
    • H01L29/34H01L21/02
    • H01L29/34H01L21/0201H01L21/02024
    • A semiconductor wafer having sag formed at an outer periphery at the time of polishing, wherein a displacement of the semiconductor wafer in a thickness direction is 100 nm or less between a center and a outer peripheral sag start position of the semiconductor wafer, and the center of the semiconductor wafer has a convex shape, an amount of outer peripheral sag of the semiconductor wafer is 100 nm or less, and the outer peripheral sag start position is away from an outer peripheral portion of the semiconductor wafer toward the center or 20 mm or more away from an outer peripheral end of the semiconductor wafer toward the center, the outer peripheral portion being a measurement target of ESFQR.
    • 在抛光时在外周形成有凹陷的半导体晶片,其中半导体晶片在厚度方向上的位移在半导体晶片的中心和外周起始位置之间为100nm以下,中心 半导体晶片的外周凹陷量为100nm以下,外周凹陷开始位置远离半导体晶片的外周部朝向中心或20mm,或者 更远离半导体晶片的外周端朝向中心,外周部​​是ESFQR的测量对象。