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1. 发明专利

CA3044018A1 HIGH POWER BRAGG GRATING BASED SEMICONDUCTOR LASER 未知
公开(公告)号：CA3044018A1
公开(公告)日：2018-03-01
申请号：CA3044018
申请日：2017-08-22
申请人： MORTON PHOTONICS INCORPORATED
发明人： MORTON PAUL A
IPC分类号： H01S5/14
摘要： A laser including: a gain chip; an external cavity incorporating a Bragg grating; and a baseplate; wherein a first end of the gain chip has a high reflectivity facet forming a first end of the laser cavity; a second end of the gain chip has a low reflectivity facet; and a second part of the external cavity comprises a Bragg grating, supported by the baseplate, the temperature of the baseplate being maintained through a feedback loop; wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain chip; wherein the Bragg grating is physically long and occupies a majority of the length of the external cavity and is apodized to control the sidemodes of the grating reflection.

2. 发明专利

SG11202009807UA HETEROGENEOUS STRUCTURE ON AN INTEGRATED PHOTONICS PLATFORM 未知
公开(公告)号：SG11202009807UA
公开(公告)日：2020-11-27
申请号：SG11202009807U
申请日：2019-04-03
申请人： UNIV NEW YORK STATE RES FOUND , US GOV AIR FORCE , MORTON PHOTONICS INCORPORATED
发明人： COOLBAUGH DOUGLAS , LA TULIPE DOUGLAS , MORTON PAUL , USECHAK NICHOLAS
IPC分类号： G02F1/095 , G02B6/12
摘要： There is set forth herein an integrated photonics structure having a waveguide disposed within a dielectric stack of the integrated photonics structure, wherein the integrated photonics structure further includes a field generating electrically conductive structure disposed within the dielectric stack; and a heterogenous structure attached to the integrated photonics structure, the heterogenous structure having field sensitive material that is sensitive to a field generated by the field generating electrically conductive structure. There is set forth herein a method including fabricating an integrated photonics structure, wherein the fabricating an integrated photonics structure includes fabricating a waveguide within a dielectric stack, wherein the fabricating an integrated photonics structure further includes fabricating a field generating electrically conductive structure within the dielectric stack; and attaching a heterogenous structure to the integrated photonics structure, the heterogenous structure having field sensitive material that is sensitive to a field generated by the field generating electrically conductive structure.

3. 发明申请

WO2018039224A1 HIGH POWER BRAGG GRATING BASED SEMICONDUCTOR LASER 审中-公开
标题翻译：基于高功率BRAGG光栅的半导体激光器
公开(公告)号：WO2018039224A1
公开(公告)日：2018-03-01
申请号：PCT/US2017/048004
申请日：2017-08-22
申请人： MORTON PHOTONICS INCORPORATED
发明人： MORTON, Paul, A.
IPC分类号： H01S5/14
摘要： A laser including: a gain chip; an external cavity incorporating a Bragg grating; and a baseplate; wherein a first end of the gain chip has a high reflectivity facet forming a first end of the laser cavity; a second end of the gain chip has a low reflectivity facet; and a second part of the external cavity comprises a Bragg grating, supported by the baseplate, the temperature of the baseplate being maintained through a feedback loop; wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain chip; wherein the Bragg grating is physically long and occupies a majority of the length of the external cavity and is apodized to control the sidemodes of the grating reflection.
摘要翻译：一种激光器，包括：增益芯片; 包含布拉格光栅的外腔; 和底板; 其中所述增益芯片的第一端具有形成所述激光腔的第一端的高反射率小面; 增益芯片的第二端具有低反射率面; 并且所述外腔的第二部分包括由所述底板支撑的布拉格光栅，所述底板的温度通过反馈回路保持; 其中外腔的光学长度至少比增益芯片的光学长度大一个数量级; 其中布拉格光栅在物理上是长的并且占据外腔的大部分长度并且被切趾以控制光栅反射的侧模。

4. 发明授权

US11550173B2 Heterogeneous structure on an integrated photonics platform 有权
公开(公告)号：US11550173B2
公开(公告)日：2023-01-10
申请号：US16952013
申请日：2020-11-18
申请人： The Research Foundation for The State University of New York , Government of the United States, as Represented by the Secretary of the Air Force , Morton Photonics Incorporated
发明人： Douglas Coolbaugh , Douglas La Tulipe , Paul A. Morton , Nicholas G. Usechak
IPC分类号： G02F1/035 , G02F1/095 , G02B6/12
摘要： There is set forth herein an integrated photonics structure having a waveguide disposed within a dielectric stack of the integrated photonics structure, wherein the integrated photonics structure further includes a field generating electrically conductive structure disposed within the dielectric stack; and a heterogenous structure attached to the integrated photonics structure, the heterogenous structure having field sensitive material that is sensitive to a field generated by the field generating electrically conductive structure. There is set forth herein a method including fabricating an integrated photonics structure, wherein the fabricating an integrated photonics structure includes fabricating a waveguide within a dielectric stack, wherein the fabricating an integrated photonics structure further includes fabricating a field generating electrically conductive structure within the dielectric stack; and attaching a heterogenous structure to the integrated photonics structure, the heterogenous structure having field sensitive material that is sensitive to a field generated by the field generating electrically conductive structure.

5. 发明授权

US10454248B1 Ultra-low noise, highly stable single-mode operation, high power, Bragg grating based semiconductor laser 有权
公开(公告)号：US10454248B1
公开(公告)日：2019-10-22
申请号：US16246820
申请日：2019-01-14
申请人： Morton Photonics Incorporated
发明人： Paul A. Morton
IPC分类号： H01S5/14 , H01S5/024 , H01S5/06 , H01S5/125 , H01S5/10 , H01S5/028 , H01S5/0687
摘要： A laser including: a gain chip; an external cavity incorporating a Bragg grating; and a baseplate; wherein a first end of the gain chip has a high reflectivity facet forming a first end of the laser cavity; a second end of the gain chip has a low reflectivity facet; and a second part of the external cavity comprises a Bragg grating, supported by the baseplate, the temperature of the baseplate being maintained through a feedback loop; wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain chip; wherein the Bragg grating is physically long and occupies a majority of the length of the external cavity and is apodized to control the sidemodes of the grating reflection.

6. 发明授权

US10193306B2 Ultra-low noise, highly stable single-mode operation, high power, Bragg grating based semiconductor laser 有权
公开(公告)号：US10193306B2
公开(公告)日：2019-01-29
申请号：US15683380
申请日：2017-08-22
申请人： Morton Photonics Incorporated
发明人： Paul A. Morton
IPC分类号： H01S5/14 , H01S5/024 , H01S5/028 , H01S5/06 , H01S5/0687 , H01S5/10 , H01S5/12 , H01S5/125
摘要： A laser including: a gain chip; an external cavity incorporating a Bragg grating; and a baseplate; wherein a first end of the gain chip has a high reflectivity facet forming a first end of the laser cavity; a second end of the gain chip has a low reflectivity facet; and a second part of the external cavity comprises a Bragg grating, supported by the baseplate, the temperature of the baseplate being maintained through a feedback loop; wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain chip; wherein the Bragg grating is physically long and occupies a majority of the length of the external cavity and is apodized to control the sidemodes of the grating reflection.

7. 发明申请

US20180054040A1 ULTRA-LOW NOISE, HIGHLY STABLE SINGLE-MODE OPERATION, HIGH POWER, BRAGG GRATING BASED SEMICONDUCTOR LASER 审中-公开
公开(公告)号：US20180054040A1
公开(公告)日：2018-02-22
申请号：US15683380
申请日：2017-08-22
申请人： Morton Photonics Incorporated
发明人： Paul A. Morton
IPC分类号： H01S5/14 , H01S5/024 , H01S5/125 , H01S5/10 , H01S5/12 , H01S5/06 , H01S5/0687 , H01S5/028
CPC分类号： H01S5/146 , H01S5/02415 , H01S5/02438 , H01S5/02476 , H01S5/028 , H01S5/0612 , H01S5/0687 , H01S5/1039 , H01S5/1225 , H01S5/125 , H01S5/141 , H01S2301/163
摘要： A laser including: a gain chip; an external cavity incorporating a Bragg grating; and a baseplate; wherein a first end of the gain chip has a high reflectivity facet forming a first end of the laser cavity; a second end of the gain chip has a low reflectivity facet; and a second part of the external cavity comprises a Bragg grating, supported by the baseplate, the temperature of the baseplate being maintained through a feedback loop; wherein the optical length of the external cavity is at least an order of magnitude greater than the optical length of the gain chip; wherein the Bragg grating is physically long and occupies a majority of the length of the external cavity and is apodized to control the sidemodes of the grating reflection.

8. 发明申请

US20210072568A1 HETEROGENEOUS STRUCTURE ON AN INTEGRATED PHOTONICS PLATFORM 有权
公开(公告)号：US20210072568A1
公开(公告)日：2021-03-11
申请号：US16952013
申请日：2020-11-18
申请人： The Research Foundation for The State University of New York , Government of the United States, as Represented by the Secretary of the Air Force , Morton Photonics Incorporated
发明人： Douglas COOLBAUGH , Douglas LA TULIPE , Paul A. MORTON , Nicholas G. USECHAK
IPC分类号： G02F1/035 , G02F1/095 , G02B6/12
摘要： There is set forth herein an integrated photonics structure having a waveguide disposed within a dielectric stack of the integrated photonics structure, wherein the integrated photonics structure further includes a field generating electrically conductive structure disposed within the dielectric stack; and a heterogenous structure attached to the integrated photonics structure, the heterogenous structure having field sensitive material that is sensitive to a field generated by the field generating electrically conductive structure. There is set forth herein a method including fabricating an integrated photonics structure, wherein the fabricating an integrated photonics structure includes fabricating a waveguide within a dielectric stack, wherein the fabricating an integrated photonics structure further includes fabricating a field generating electrically conductive structure within the dielectric stack; and attaching a heterogenous structure to the integrated photonics structure, the heterogenous structure having field sensitive material that is sensitive to a field generated by the field generating electrically conductive structure.

10. 发明公开

EP3501070A1 HIGH POWER BRAGG GRATING BASED SEMICONDUCTOR LASER 审中-公开
公开(公告)号：EP3501070A1
公开(公告)日：2019-06-26
申请号：EP17844278.6
申请日：2017-08-22
申请人： Morton Photonics Incorporated
发明人： MORTON, Paul, A.
IPC分类号： H01S5/14

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