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1. 发明专利

JP2017086157A スキー用品乾燥装置审中-公开
公开(公告)号：JP2017086157A
公开(公告)日：2017-05-25
申请号：JP2015215657
申请日：2015-11-02
申请人：松本直樹 , Naoki Matsumoto , 直樹松本
发明人： MATSUMOTO NAOKI
IPC分类号： A47L23/20 , F26B9/00 , F26B21/00 , F26B25/00
摘要：【課題】スキー靴の内部の乾燥処理が容易であると共に、スキー靴の乾燥処理が不要な場合には、乾燥処理を行うためのスペースの端部分に乾燥用風供給体を退避させることで、乾燥処理を行うためのスペースを広くすることができるスキー用品乾燥装置の構成を提供すること。【解決手段】スキー用品を収容するケース10と、乾燥用風を発生する乾燥用風発生機20と、乾燥用風発生機20が発生した乾燥用風をケース10の内部空間11に供給する乾燥用風供給体30と、を具備し、乾燥用風供給体30は、ケース10の内壁面10Aにおいて内壁面10Aに起立させた状態と内壁面10Aに沿わせた状態に切り替え可能に設けられていると共に外表面には乾燥用風噴出口31が形成されていることを特徴とするスキー用品乾燥装置100である。【選択図】図3

2. 发明专利

JP2006031128A Meeting support system 审中-公开
标题翻译：会议支持系统
公开(公告)号：JP2006031128A
公开(公告)日：2006-02-02
申请号：JP2004205355
申请日：2004-07-13
申请人： Kotaro Horino , Naoki Matsumoto , Tomoya Onodera , 航太郎堀野 , 智也小野寺 , 直樹松本
发明人： MATSUMOTO NAOKI , HORINO KOTARO , ONODERA TOMOYA
IPC分类号： G06Q50/00 , G06Q50/10
摘要： PROBLEM TO BE SOLVED: To provide a meeting support system by which even a person who does not participate in a meeting can easily pay for a gift for a guest to save any special labor such as the payment. SOLUTION: A manager inputs user information to a server 1a by a portable telephone set 3, and makes user registration (ST101). Then, the manager registers class reunion group information in order to start the notification site of the holding of an exchange meeting (ST102). Then, the notification of the meeting is transmitted as a mail from the server 1a in response to access from the manager or the member who has been already notified of the holding of the meeting (ST103). Each member who has received the notification mail makes a response showing that the member agrees with gift and charging to the server 1a in the case of his or her approval of the purpose (ST104). Also, when the member wants to make a message to a main guest, the member transmits the message (ST105). The server 1a calculates the accumulating totals of the received charging, and gathers a plurality of messages into one (ST106). COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供会议支持系统，即使是不参加会议的人也可以轻松地为客人支付礼物以挽救诸如付款的特殊劳动。解决方案：经理通过便携式电话机3将用户信息输入到服务器1a，并进行用户注册（ST101）。然后，经理登记班级团聚信息，以便开始举行交流会议的通知地点（ST102）。然后，响应于来自经理或已经被通知召开会议的会员的访问（ST103），从服务器1a发送作为邮件的通知。收到通知邮件的每个成员作出答复，表明该会员同意礼物并在其目的批准的情况下向服务器1a收费（ST104）。另外，当成员要向主客人发消息时，成员发送消息（ST105）。服务器1a计算接收到的计费的累计总数，并将多个消息收集到一个中（ST106）。版权所有（C）2006，JPO＆NCIPI

3. 发明授权

US09035509B2 Motor 有权
标题翻译：发动机
公开(公告)号：US09035509B2
公开(公告)日：2015-05-19
申请号：US13533354
申请日：2012-06-26
申请人： Naoki Matsumoto
发明人： Naoki Matsumoto
IPC分类号： H02K5/22 , H02K11/02
CPC分类号： H02K11/026 , H02K5/225
摘要： A yoke of a motor has a bottom and an open end and accommodates an armature. An end bracket substantially closes the open end of the yoke. A connector portion, which bulges outward of the yoke, and a cutout portion are formed in the circumferential wall of the end bracket. A pair of feed members is provided to extend from the interior of the end bracket to the connector portion through the cutout portion. The end bracket has an accommodation recess for accommodating the noise suppression element at a position corresponding to the cutout portion. Each feed member has an accommodation recess corresponding portion, which corresponds to the accommodation recess, and a cutout portion corresponding portion, which corresponds to the cutout portion. The distance between the accommodation recess corresponding portions of the feed members is greater than the distance between the cutout portion corresponding portions.
摘要翻译：电动机的轭具有底部和开口端，并且容纳电枢。端部支架基本上封闭轭的开口端。在端托架的周壁上形成有一个连接部，该连接部从轭的外侧凸出，切口部形成。一对进给构件设置成通过切口部分从端托架的内部延伸到连接器部分。端托架具有用于将噪声抑制元件容纳在与切口部分相对应的位置处的容纳凹部。每个进给构件具有对应于容纳凹部的容纳凹部对应部分和对应于切口部分的切口部分对应部分。进给构件的容纳凹部对应部分之间的距离大于切口部分对应部分之间的距离。

4. 发明申请

US20130302992A1 APPARATUS FOR PLASMA TREATMENT AND METHOD FOR PLASMA TREATMENT 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US20130302992A1
公开(公告)日：2013-11-14
申请号：US13885708
申请日：2011-11-16
申请人： Toshihisa Nozawa , Caizhong Tian , Masaru Sasaki , Naoki Mihara , Naoki Matsumoto , Kazuki Moyama , Jun Yoshikawa
发明人： Toshihisa Nozawa , Caizhong Tian , Masaru Sasaki , Naoki Mihara , Naoki Matsumoto , Kazuki Moyama , Jun Yoshikawa
IPC分类号： H05H1/46
CPC分类号： H05H1/46 , H01J37/32192 , H01J37/32211 , H01J37/3244
摘要： An apparatus for plasma treatment contains a process vessel provided with a mounting table for mounting a substrate, a first gas supplying unit configured to supply a first gas into the process vessel, a first plasma generating unit configured to convert at least a part of the first gas to a first plasma, a second gas supplying unit configured to supply a second gas into the process vessel, and a second plasma generating unit configured to convert at least a part of the second gas to a second plasma. A height of ea an inlet of the second gas from the mounting table is lower than a height of an inlet of the first gas from the mounting table.
摘要翻译：一种用于等离子体处理的装置，包括设置有用于安装基板的安装台的处理容器，构造成将第一气体供应到处理容器中的第一气体供给单元，第一等离子体产生单元，其被配置为将第一第二气体供给单元，被配置为将第二气体供应到处理容器中;第二等离子体产生单元，被配置为将至少一部分第二气体转化为第二等离子体。来自安装台的第二气体的入口的高度低于来自安装台的第一气体的入口的高度。

5. 发明授权

US08506753B2 Capacitive coupling plasma processing apparatus and method for using the same 有权
标题翻译：电容耦合等离子体处理装置及其使用方法
公开(公告)号：US08506753B2
公开(公告)日：2013-08-13
申请号：US13177195
申请日：2011-07-06
申请人： Naoki Matsumoto , Chishio Koshimizu , Akira Koshiishi
发明人： Naoki Matsumoto , Chishio Koshimizu , Akira Koshiishi
IPC分类号： C23F1/00 , H01L21/306 , C23C16/00
CPC分类号： H01L21/67069 , C23F4/00 , H01J37/32082 , H01J37/3244 , H01J37/32532 , H01J2237/334
摘要： A plasma processing apparatus includes a process container configured to accommodate a target substrate and to be vacuum-exhausted. A first electrode and a second electrode are disposed opposite each other within the process container. The first electrode includes an outer portion and an inner portion both facing the second electrode such that the outer portion surrounds the inner portion. An RF power supply is configured to apply an RF power to the outer portion of the first electrode. A DC power supply is configured to apply a DC voltage to the inner portion of the first electrode. A process gas supply unit is configured to supply a process gas into the process container, wherein plasma of the process gas is generated between the first electrode and the second electrode.
摘要翻译：等离子体处理装置包括被配置为容纳目标基板并被抽真空的处理容器。第一电极和第二电极在处理容器内彼此相对设置。第一电极包括外部部分和面向第二电极的内部部分，使得外部部分围绕内部部分。 RF电源被配置为向第一电极的外部施加RF功率。 DC电源被配置为向第一电极的内部施加DC电压。处理气体供应单元被配置为将处理气体供应到处理容器中，其中处理气体的等离子体在第一电极和第二电极之间产生。

6. 发明授权

US08404137B2 Plasma processing apparatus and plasma processing method 有权
标题翻译：等离子体处理装置和等离子体处理方法
公开(公告)号：US08404137B2
公开(公告)日：2013-03-26
申请号：US13014155
申请日：2011-01-26
申请人： Chishio Koshimizu , Naoki Matsumoto
发明人： Chishio Koshimizu , Naoki Matsumoto
IPC分类号： G01R31/00
CPC分类号： H01J37/32174 , H01J37/32091 , H01J37/32165 , H01J37/32706
摘要： A plasma processing apparatus includes a plurality of radio-frequency power supplies for supplying radio-frequency powers having frequencies different from each other, a common feeding line for superposing radio-frequency powers supplied respectively from the plurality of radio-frequency power supplies and feeding the superposed radio-frequency power to a same radio-frequency electrode, a radio-frequency power extracting device for extracting radio-frequency powers having predetermined frequencies from radio-frequency powers fed via the feeding line, and a radio-frequency voltage detector for measuring voltages of the radio-frequency powers having the predetermined frequencies extracted by the radio-frequency power extracting device.
摘要翻译：等离子体处理装置包括多个用于提供具有彼此不同频率的射频功率的高频电源，用于叠加从多个射频电源分别提供的射频功率的馈电线，将叠加的射频电力叠加到同一射频电极，用于从经由馈电线馈送的射频功率提取具有预定频率的射频功率的射频功率提取装置和用于测量电压的射频电压检测器具有由射频功率提取装置提取的预定频率的射频功率。

7. 发明申请

US20130002069A1 MOTOR 有权
标题翻译：发动机
公开(公告)号：US20130002069A1
公开(公告)日：2013-01-03
申请号：US13533354
申请日：2012-06-26
申请人： Naoki MATSUMOTO
发明人： Naoki MATSUMOTO
IPC分类号： H02K11/00
CPC分类号： H02K11/026 , H02K5/225
摘要： A yoke of a motor has a bottom and an open end and accommodates an armature. An end bracket substantially closes the open end of the yoke. A connector portion, which bulges outward of the yoke, and a cutout portion are formed in the circumferential wall of the end bracket. A pair of feed members is provided to extend from the interior of the end bracket to the connector portion through the cutout portion. The end bracket has an accommodation recess for accommodating the noise suppression element at a position corresponding to the cutout portion. Each feed member has an accommodation recess corresponding portion, which corresponds to the accommodation recess, and a cutout portion corresponding portion, which corresponds to the cutout portion. The distance between the accommodation recess corresponding portions of the feed members is greater than the distance between the cutout portion corresponding portions.
摘要翻译：电动机的轭具有底部和开口端，并且容纳电枢。端部支架基本上封闭轭的开口端。在端托架的周壁上形成有一个连接部，该连接部从轭的外侧凸出，切口部形成。一对进给构件设置成通过切口部分从端托架的内部延伸到连接器部分。端托架具有用于将噪声抑制元件容纳在与切口部分相对应的位置处的容纳凹部。每个进给构件具有对应于容纳凹部的容纳凹部对应部分和对应于切口部分的切口部分对应部分。进给构件的容纳凹部对应部分之间的距离大于切口部分对应部分之间的距离。

8. 发明申请

US20120267048A1 PLASMA PROCESSING APPARATUS 有权
标题翻译：等离子体加工设备
公开(公告)号：US20120267048A1
公开(公告)日：2012-10-25
申请号：US13454513
申请日：2012-04-24
申请人： Kazuki Moyama , Kiyotaka Ishibashi , Osamu Morita , Takehiro Tanikawa , Naoki Matsumoto , Naoki Mihara , Wataru Yoshikawa
发明人： Kazuki Moyama , Kiyotaka Ishibashi , Osamu Morita , Takehiro Tanikawa , Naoki Matsumoto , Naoki Mihara , Wataru Yoshikawa
IPC分类号： B05C5/00
CPC分类号： H01J37/32192 , H01J37/32229 , H01J37/3244
摘要： A plasma processing apparatus includes a processing chamber, a stage, a dielectric member, a microwave introduction device, an injector, and an electric field shield. The processing chamber has a processing space therein. The stage is provided within the processing chamber. The dielectric member has a through hole and is provided to face the stage. The microwave introduction device is configured to introduce microwave into the processing space via the dielectric member. The injector has at least one through hole and is made of a dielectric material, e.g., a bulk dielectric material. The injector is provided within the dielectric member. The injector and the through hole of the dielectric member form a path for supplying a processing gas into the processing space. The electric field shield encloses the injector.
摘要翻译：等离子体处理装置包括处理室，载物台，电介质构件，微波引入装置，注射器和电场屏蔽。处理室在其中具有处理空间。工作台设置在处理室内。电介质构件具有通孔并且设置成面向台。微波引入装置经由电介质构件将微波引入处理空间。喷射器具有至少一个通孔，并且由介电材料制成，例如大体电介质材料。喷射器设置在电介质构件内。介电构件的注射器和通孔形成用于将处理气体供应到处理空间的路径。电场屏蔽封闭注射器。

9. 发明申请

US20120184108A1 METHOD OF PROCESSING OF NITRIDE SEMICONDUCTOR WAFER, NITRIDE SEMICONDUCTOR WAFER, METHOD OF PRODUCING NITRIDE SEMICONDUCTOR DEVICE AND NITRIDE SEMICONDUCTOR DEVICE 审中-公开
公开(公告)号：US20120184108A1
公开(公告)日：2012-07-19
申请号：US13437221
申请日：2012-04-02
申请人： Keiji Ishibashi , Hidenori Mikami , Naoki Matsumoto
发明人： Keiji Ishibashi , Hidenori Mikami , Naoki Matsumoto
IPC分类号： H01L21/302
CPC分类号： H01L21/02021 , C30B29/403 , C30B33/00 , H01L24/32 , H01L33/0075 , H01L2224/48091 , H01L2224/48247 , H01L2224/73265 , H01L2924/12041 , H01L2924/12042 , Y10S438/928 , Y10S438/959 , Y10S438/977 , H01L2924/00014 , H01L2924/00
摘要： A nitride semiconductor wafer is planar-processed by grinding a bottom surface of the wafer, etching the bottom surface by, e.g., KOH for removing a bottom process-induced degradation layer, chamfering by a rubber whetstone bonded with 100 wt %-60 wt % #3000-#600 diamond granules and 0 wt %-40 wt % oxide granules, grinding and polishing a top surface of the wafer, etching the top surface for eliminating a top process-induced degradation layer and maintaining a 0.5 μm-10 μm thick edge process-induced degradation layer.

10. 发明申请

US20120145324A1 PLASMA PROCESSING APPARATUS AND METHOD 有权
标题翻译：等离子体加工设备和方法
公开(公告)号：US20120145324A1
公开(公告)日：2012-06-14
申请号：US13396181
申请日：2012-02-14
申请人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
发明人： Akira Koshiishi , Masaru Sugimoto , Kunihiko Hinata , Noriyuki Kobayashi , Chishio Koshimizu , Ryuji Ohtani , Kazuo Kibi , Masashi Saito , Naoki Matsumoto , Manabu Iwata , Daisuke Yano , Yohei Yamazawa
IPC分类号： H01L21/3065
CPC分类号： H01J37/32091 , H01J37/32082 , H01J37/32174 , H01J37/32348 , H01J37/3244 , H01J37/32541 , H01J37/32568 , H01J37/32642 , H01J37/32706 , H01J37/32834 , H01J2237/3344 , H01L21/02126 , H01L21/02164 , H01L21/0217 , H01L21/31116 , H01L21/31138 , H01L21/31144 , H01L21/67069
摘要： An apparatus includes an upper electrode and a lower electrode for supporting a wafer disposed opposite each other within a process chamber. A first RF power supply configured to apply a first RF power having a relatively higher frequency is connected to the upper electrode. A second RF power supply configured to apply a second RF power having a relatively lower frequency is connected to the lower electrode. A variable DC power supply is connected to the upper electrode. A process gas is supplied into the process chamber while any one of application voltage, application current, and application power from the variable DC power supply to the upper electrode is controlled, to generate plasma of the process gas so as to perform plasma etching.
摘要翻译：一种装置包括用于支撑在处理室内相对设置的晶片的上电极和下电极。被配置为施加具有相对较高频率的第一RF功率的第一RF电源连接到上电极。配置为施加具有相对较低频率的第二RF功率的第二RF电源连接到下电极。可变直流电源连接到上电极。将处理气体供给到处理室中，同时控制来自可变直流电源到上部电极的施加电压，施加电流和施加电力中的任何一个，以产生处理气体的等离子体，以进行等离子体蚀刻。

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