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1. 发明授权

US07109125B1 Selective fabrication of high capacitance density areas in a low dielectric constant material 有权
标题翻译：在低介电常数材料中选择性地制造高电容密度区域
公开(公告)号：US07109125B1
公开(公告)日：2006-09-19
申请号：US10995762
申请日：2004-11-22
申请人： Q. Z. Liu , David Feiler , Bin Zhao , Phil N. Sherman , Maureen Brongo
发明人： Q. Z. Liu , David Feiler , Bin Zhao , Phil N. Sherman , Maureen Brongo
IPC分类号： H01L21/302 , H01L21/461 , H01L21/20 , H01L21/8242
CPC分类号： H01L28/86 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： Method for selective fabrication of high capacitance density areas in a low dielectric constant material and related structure are disclosed. In one embodiment, a first area of a dielectric layer is covered, for example with photoresist, while a second area of the dielectric layer is exposed to a dielectric conversion source such as E-beams, I-beams, oxygen plasma, or an appropriate chemical. The exposure causes the dielectric constant of the dielectric layer in the second area to increase. A number of capacitor trenches are etched in the second area of the dielectric. The capacitor trenches are then filled with an appropriate metal, such as copper, and a chemical mechanical polish is performed. The second area in which the capacitor trenches have been etched and filled has a higher capacitance density relative to the first area. In another embodiment, the exposure to the dielectric conversion source is not performed until after the chemical mechanical polish has been performed. In yet another embodiment, a blanket layer of metal, such as aluminum, is first deposited. The blanket layer of metal is then etched to form metal lines. Then a gap fill dielectric is utilized to fill the gaps between the remaining metal lines. A first area of the gap fill dielectric is then covered and a second area of the gap fill dielectric is exposed to a dielectric conversion source. After exposure to the dielectric conversion source, the dielectric constant of the gap fill dielectric in the second area increases. The metal lines in the second area can then be used as capacitor electrodes of a high density capacitor.
摘要翻译：公开了用于选择性地制造低介电常数材料和相关结构中的高电容密度区域的方法。在一个实施例中，电介质层的第一区域例如被光致抗蚀剂覆盖，而介电层的第二区域暴露于电介质转换源（例如电子束，I型波束，氧等离子体）或适当的化学品。曝光导致第二区域中介电层的介电常数增加。在电介质的第二区域中蚀刻多个电容器沟槽。然后用适当的金属（例如铜）填充电容器沟槽，并进行化学机械抛光。其中电容器沟槽被蚀刻和填充的第二区域相对于第一区域具有较高的电容密度。在另一个实施例中，直到进行化学机械抛光之后，不进行介电转换源的曝光。在又一实施例中，首先沉积诸如铝的金属覆盖层。然后蚀刻金属覆盖层以形成金属线。然后使用间隙填充电介质来填充剩余金属线之间的间隙。然后覆盖间隙填充电介质的第一区域，并且间隙填充电介质的第二区域暴露于电介质转换源。在暴露于电介质转换源之后，第二区域中间隙填充电介质的介电常数增加。然后可以将第二区域中的金属线用作高密度电容器的电容器电极。

2. 发明授权

US07049246B1 Method for selective fabrication of high capacitance density areas in a low dielectric constant material 有权
标题翻译：用于在低介电常数材料中选择性地制造高电容密度区域的方法
公开(公告)号：US07049246B1
公开(公告)日：2006-05-23
申请号：US09575055
申请日：2000-05-19
申请人： Q. Z. Liu , David Feiler , Bin Zhao , Phil N. Sherman , Maureen Brongo
发明人： Q. Z. Liu , David Feiler , Bin Zhao , Phil N. Sherman , Maureen Brongo
IPC分类号： H01L21/302 , H01L21/461 , H01L21/20 , H01L21/8242
CPC分类号： H01L28/86 , H01L23/5223 , H01L2924/0002 , H01L2924/00
摘要： Method for selective fabrication of high capacitance density areas in a low dielectric constant material and related structure are disclosed. In one embodiment, a first area of a dielectric layer is covered while a second area of the dielectric layer is exposed to a dielectric conversion source. The exposure causes the dielectric constant of the dielectric layer in the second area to increase. A number of interconnect trenches are etched in the first area of the dielectric and a number of capacitor trenches are etched in the second area of the dielectric. The interconnect trenches and the capacitor trenches are then filled with an appropriate metal, such as copper, and a chemical mechanical polish is performed. The second area in which the capacitor trenches have been etched and filled has a higher capacitance density relative to the first area.
摘要翻译：公开了用于选择性地制造低介电常数材料和相关结构中的高电容密度区域的方法。在一个实施例中，电介质层的第一区域被覆盖，同时介电层的第二区域暴露于电介质转换源。曝光导致第二区域中介电层的介电常数增加。在电介质的第一区域中蚀刻多个互连沟槽，并且在电介质的第二区域中蚀刻多个电容器沟槽。然后用适当的金属（例如铜）填充互连沟槽和电容器沟槽，并进行化学机械抛光。其中电容器沟槽被蚀刻和填充的第二区域相对于第一区域具有较高的电容密度。

3. 发明授权

US06995068B1 Double-implant high performance varactor and method for manufacturing same 有权
标题翻译：双种植体高性能变容二极管及其制造方法
公开(公告)号：US06995068B1
公开(公告)日：2006-02-07
申请号：US09590462
申请日：2000-06-09
申请人： Marco Racanelli , Chun Hu , Phil N. Sherman
发明人： Marco Racanelli , Chun Hu , Phil N. Sherman
IPC分类号： H01L21/76
CPC分类号： H01L29/66174 , H01L29/93
摘要： A varactor designed to enable voltage controlled oscillator (VCO) integration in wireless systems is the base-emitter junction of a specially optimized NPN device formed with a double base implant. A first, shallow implant optimizes capacitance, leakage current, and tuning range. A second, deeper base implant is used to improve the quality factor of the device by reducing the base resistance. The varactor includes a third terminal (collector), which isolates the emitter-base junction from the substrate, providing flexibility in circuit applications. A method for fabricating a high performance varactor having the above-described structure is also provided.
摘要翻译：设计用于在无线系统中实现压控振荡器（VCO）集成的变容二极管是由双基底植入物形成的特别优化的NPN器件的基极 - 发射极结。第一个浅的注入优化电容，漏电流和调谐范围。第二个更深的基底植入物用于通过降低基极电阻来改善器件的品质因数。变容二极管包括第三端子（集电极），其将发射极 - 基极结与衬底隔离，在电路应用中提供灵活性。还提供了一种制造具有上述结构的高性能变容二极管的方法。

4. 发明授权

US06411492B1 Structure and method for fabrication of an improved capacitor 有权
标题翻译：改进电容器制造的结构和方法
公开(公告)号：US06411492B1
公开(公告)日：2002-06-25
申请号：US09578229
申请日：2000-05-24
申请人： Arjun Kar-Roy , Phil N. Sherman
发明人： Arjun Kar-Roy , Phil N. Sherman
IPC分类号： H01G4008
CPC分类号： H01L28/90 , H01L23/5223 , H01L27/0805 , H01L2924/0002 , H01L2924/00
摘要： Structure and method for fabrication of an improved capacitor are disclosed. In one embodiment, the disclosed capacitor includes a metal column comprising a number of interconnect metal segments and a number of via metal segments stacked on one another. The metal column constitutes one electrode of the capacitor. Another electrode of the capacitor is a metal wall surrounding the metal column. In one embodiment, the metal wall is fabricated from a number of interconnect metal structures and a number of via metal structures stacked on one another. In one embodiment, the metal wall is shaped as a hexagon. In this embodiment, a tight packing arrangement is achieved by packing individual hexagonal capacitors “wall to wall” so as to achieve a cluster of individual hexagonal capacitors. The cluster of individual capacitors acts as a single composite capacitor. In one embodiment, the interconnect metal and via metal are both made of copper. In another embodiment, the interconnect metal is made of copper while the via metal is made of tungsten.
摘要翻译：公开了用于制造改进的电容器的结构和方法。在一个实施例中，所公开的电容器包括金属柱，该金属柱包括多个互连金属段和彼此堆叠的多个通孔金属段。金属柱构成电容器的一个电极。电容器的另一个电极是围绕金属柱的金属壁。在一个实施例中，金属壁由多个互连金属结构和彼此堆叠的多个通孔金属结构制成。在一个实施例中，金属壁被成形为六边形。在该实施例中，通过将单个六边形电容器“壁到壁”包装以实现单个六边形电容器的集群来实现紧密堆积布置。单个电容器的簇作为单个复合电容器。在一个实施例中，互连金属和通孔金属都由铜制成。在另一个实施例中，互连金属由铜制成，而通孔金属由钨制成。

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