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1. 发明申请

US20130049200A1 SILICIDATION OF DEVICE CONTACTS USING PRE-AMORPHIZATION IMPLANT OF SEMICONDUCTOR SUBSTRATE 审中-公开
标题翻译：使用半导体基板的预加工植入物进行器件接触的硅化
公开(公告)号：US20130049200A1
公开(公告)日：2013-02-28
申请号：US13598686
申请日：2012-08-30
申请人： Paul R. Besser , Roy A. Carruthers , Christopher P. D'Emic , Christian Lavoie , Conal E. Murray , Kazuya Ohuchi , Christopher Scerbo , Bin Yang
发明人： Paul R. Besser , Roy A. Carruthers , Christopher P. D'Emic , Christian Lavoie , Conal E. Murray , Kazuya Ohuchi , Christopher Scerbo , Bin Yang
IPC分类号： H01L29/43
CPC分类号： H01L21/26506 , H01L21/28518 , H01L29/00 , H01L29/665 , H01L29/7833
摘要： Silicidation techniques with improved rare earth silicide morphology for fabrication of semiconductor device contacts. For example, a method for forming silicide includes implanting a silicon layer with an amorphizing species to fond an amorphous silicon region in the silicon layer and depositing a rare earth metal film on the silicon layer in contact with the amorphous silicon region. A silicide process is then performed to combine the rare earth metal film and the amorphous silicon region to form a silicide film on the silicon layer.
摘要翻译：具有改进的稀土硅化物形态的硅化技术用于制造半导体器件触点。例如，用于形成硅化物的方法包括将具有非晶化物质的硅层注入以在硅层中融合非晶硅区域，并在与非晶硅区域接触的硅层上沉积稀土金属膜。然后进行硅化处理以组合稀土金属膜和非晶硅区域，以在硅层上形成硅化物膜。

2. 发明授权

US07682968B2 Self-aligned metal to form contacts to Ge containing substrates and structure formed thereby 失效
标题翻译：自对准金属与Ge形成的基板和由此形成的结构形成接触
公开(公告)号：US07682968B2
公开(公告)日：2010-03-23
申请号：US12108001
申请日：2008-04-23
申请人： Cyril Cabral, Jr. , Roy A. Carruthers , Christophe Detavernier , Simon Gaudet , Christian Lavoie , Huiling Shang
发明人： Cyril Cabral, Jr. , Roy A. Carruthers , Christophe Detavernier , Simon Gaudet , Christian Lavoie , Huiling Shang
IPC分类号： H01L21/44
CPC分类号： H01L21/28525 , H01L21/28052 , H01L21/28518 , H01L29/665
摘要： A method for forming germano-silicide contacts atop a Ge-containing layer that is more resistant to etching than are conventional silicide contacts that are formed from a pure metal is provided. The method of the present invention includes first providing a structure which comprises a plurality of gate regions located atop a Ge-containing substrate having source/drain regions therein. After this step of the present invention, a Si-containing metal layer is formed atop the said Ge-containing substrate. In areas that are exposed, the Ge-containing substrate is in contact with the Si-containing metal layer. Annealing is then performed to form a germano-silicide compound in the regions in which the Si-containing metal layer and the Ge-containing substrate are in contact; and thereafter, any unreacted Si-containing metal layer is removed from the structure using a selective etch process. In some embodiments, an additional annealing step can follow the removal step. The method of the present invention provides a structure having a germano-silicide contact layer atop a Ge-containing substrate, wherein the germano-silicide contact layer contains more Si than the underlying Ge-containing substrate.
摘要翻译：提供了一种形成锗硅化物的方法，该方法与由纯金属形成的常规硅化物接触相比更能抵抗蚀刻的含Ge层顶部接触。本发明的方法包括首先提供一种结构，该结构包括位于其中具有源极/漏极区域的含Ge衬底顶部的多个栅极区域。在本发明的该步骤之后，在所述含Ge基材上形成含Si金属层。在暴露的区域中，含Ge衬底与含Si金属层接触。然后进行退火以在含Si金属层和含Ge基板接触的区域中形成锗化硅化合物; 此后，使用选择性蚀刻工艺从结构中除去任何未反应的含Si金属层。在一些实施方案中，附加的退火步骤可以跟随去除步骤。本发明的方法提供了一种在含Ge衬底顶上具有锗硅化物接触层的结构，其中锗硅化物接触层含有比下面的含Ge衬底更多的Si。

3. 发明授权

US07517795B2 Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation 失效
标题翻译：在硅化物中使用离子注入，在CMOS器件中稳定Ni单硅化物薄膜
公开(公告)号：US07517795B2
公开(公告)日：2009-04-14
申请号：US11551647
申请日：2006-10-20
申请人： Roy A. Carruthers , Cedrik Y. Cole , Christophe Detavernier , Christian Lavoie , Kenneth P. Rodbell
发明人： Roy A. Carruthers , Cedrik Y. Cole , Christophe Detavernier , Christian Lavoie , Kenneth P. Rodbell
IPC分类号： H01L21/44
CPC分类号： H01L21/28052 , H01L21/28518 , H01L29/665
摘要： A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.
摘要翻译：在后续热处理中，形成稳定的金属硅化物膜例如接触（源极/漏极或栅极）的方法基本上不附着在本发明中，能够附着在Si- 在形成金属硅化物之前，将含硅层注入到含Si层中。植入的离子稳定膜，因为发现植入物基本上防止结块或至少延迟聚集到比没有使用植入物的情况下更高的温度。

4. 发明授权

US07271486B2 Retarding agglomeration of Ni monosilicide using Ni alloys 有权
标题翻译：使用Ni合金抑制Ni一硅化物的团聚
公开(公告)号：US07271486B2
公开(公告)日：2007-09-18
申请号：US11075289
申请日：2005-03-08
申请人： Cyril Cabral, Jr. , Roy A. Carruthers , Christophe Detavernier , James M. E. Harper , Christian Lavoie
发明人： Cyril Cabral, Jr. , Roy A. Carruthers , Christophe Detavernier , James M. E. Harper , Christian Lavoie
IPC分类号： H01L23/48 , H01L23/52 , H01L29/40
CPC分类号： C04B35/58 , C04B35/58085 , C04B2235/40 , C04B2235/404 , C04B2235/405 , C04B2235/408 , C23C26/00 , C23C30/00 , H01L21/28518 , H01L21/76889
摘要： A method for providing a low resistance non-agglomerated Ni monosilicide contact that is useful in semiconductor devices. Where the inventive method of fabricating a substantially non-agglomerated Ni alloy monosilicide comprises the steps of: forming a metal alloy layer over a portion of a Si-containing substrate, wherein said metal alloy layer comprises of Ni and one or multiple alloying additive(s), where said alloying additive is Ti, V, Ge, Cr, Zr, Nb, Mo, Hf, Ta, W, Re, Rh, Pd or Pt or mixtures thereof; annealing the metal alloy layer at a temperature to convert a portion of said metal alloy layer into a Ni alloy monosilicide layer; and removing remaining metal alloy layer not converted into Ni alloy monosilicide. The alloying additives are selected for phase stability and to retard agglomeration. The alloying additives most efficient in retarding agglomeration are most efficient in producing silicides with low sheet resistance.
摘要翻译：一种用于提供半导体器件中有用的低电阻非聚集Ni单硅化物接触的方法。在制造基本上非团聚的Ni合金一硅化硅的本发明方法中，包括以下步骤：在含Si衬底的一部分上形成金属合金层，其中所述金属合金层包括Ni和一种或多种合金添加剂），其中所述合金添加剂为Ti，V，Ge，Cr，Zr，Nb，Mo，Hf，Ta，W，Re，Rh，Pd或Pt或其混合物; 在将所述金属合金层的一部分转化为Ni合金一硅化物层的温度下退火金属合金层; 并且除去未转化为Ni合金一硅化物的剩余金属合金层。选择合金添加剂用于相稳定性并阻止团聚。延迟聚集中最有效的合金添加剂在生产低薄层电阻的硅化物中是最有效的。

5. 发明授权

US07119012B2 Stabilization of Ni monosilicide thin films in CMOS devices using implantation of ions before silicidation 失效
标题翻译：在硅化物中使用离子注入，在CMOS器件中稳定Ni单硅化物薄膜
公开(公告)号：US07119012B2
公开(公告)日：2006-10-10
申请号：US10838377
申请日：2004-05-04
申请人： Roy A. Carruthers , Cedrik Y. Coia , Christophe Detavernier , Christian Lavoie , Kenneth P. Rodbell
发明人： Roy A. Carruthers , Cedrik Y. Coia , Christophe Detavernier , Christian Lavoie , Kenneth P. Rodbell
IPC分类号： H01L21/44
CPC分类号： H01L21/28052 , H01L21/28518 , H01L29/665
摘要： A method for forming a stabilized metal silicide film, e.g., contact (source/drain or gate), that does not substantially agglomerate during subsequent thermal treatments, is provided. In the present invention, ions that are capable of attaching to defects within the Si-containing layer are implanted into the Si-containing layer prior to formation of metal silicide. The implanted ions stabilize the film, because the implants were found to substantially prevent agglomeration or at least delay agglomeration to much higher temperatures than in cases in which no implants were used.
摘要翻译：提供了一种用于形成稳定的金属硅化物膜的方法，例如接触（源极/漏极或栅极），其在随后的热处理期间基本上不附聚。在本发明中，在形成金属硅化物之前，将能够附着到含Si层内的缺陷的离子注入到含Si层中。植入的离子稳定膜，因为发现植入物基本上防止结块或至少延迟聚集到比没有使用植入物的情况下更高的温度。

6. 发明授权

US06690072B2 Method and structure for ultra-low contact resistance CMOS formed by vertically self-aligned CoSi2 on raised source drain Si/SiGe device 有权
标题翻译：通过垂直自对准COSI2在升高的源极漏极Si / SiGe器件上形成的超低接触电阻CMOS的方法和结构
公开(公告)号：US06690072B2
公开(公告)日：2004-02-10
申请号：US10156782
申请日：2002-05-24
申请人： Cyril Cabral, Jr. , Roy A. Carruthers , Kevin K. Chan , Jack O. Chu , Guy Moshe Cohen , Steven J. Koester , Christian Lavoie , Ronnen A. Roy
发明人： Cyril Cabral, Jr. , Roy A. Carruthers , Kevin K. Chan , Jack O. Chu , Guy Moshe Cohen , Steven J. Koester , Christian Lavoie , Ronnen A. Roy
IPC分类号： H01L2904
CPC分类号： H01L29/41783 , H01L21/28518 , H01L21/823814 , H01L21/823835 , H01L29/161 , H01L29/665 , H01L2924/0002 , H01L2924/00
摘要： A method (and structure) of forming a vertically-self-aligned silicide contact to an underlying SiGe layer, includes forming a layer of silicon of a first predetermined thickness on the SiGe layer and forming a layer of metal on the silicon layer, where the metal layer has a second predetermined thickness. A thermal annealing process at a predetermined temperature then forms a silicide of the silicon and metal, where the predetermined temperature is chosen to substantially preclude penetration of the silicide into the underlying SiGe layer.
摘要翻译：形成垂直自对准的硅化物接触到下面的SiGe层的方法（和结构）包括在SiGe层上形成第一预定厚度的硅层，并在硅层上形成一层金属，其中金属层具有第二预定厚度。然后在预定温度下的热退火工艺形成硅和金属的硅化物，其中选择预定温度以基本排除硅化物渗透到下面的SiGe层中。

7. 发明授权

US5340775A Structure and fabrication of SiCr microfuses 失效
标题翻译： SiCr微丝的结构和制造
公开(公告)号：US5340775A
公开(公告)日：1994-08-23
申请号：US149250
申请日：1993-11-09
申请人： Roy A. Carruthers , Fernand J. Dorleans , John A. Fitzsimmons , Richard Flitsch , James A. Jubinsky , Gerald R. Larsen , Geraldine C. Schwartz , Paul J. Tsang , Robert W. Zielinski
发明人： Roy A. Carruthers , Fernand J. Dorleans , John A. Fitzsimmons , Richard Flitsch , James A. Jubinsky , Gerald R. Larsen , Geraldine C. Schwartz , Paul J. Tsang , Robert W. Zielinski
IPC分类号： H01L23/525 , H01L27/118 , H01L21/465
CPC分类号： H01L23/5256 , H01L27/118 , H01L2924/0002 , Y10S148/055
摘要： A SiCr microfuse, deletable either by electrical voltage pulses or by laser pulses, for rerouting the various components in an integrated circuit, as where redundancy in array structures is implemented, and the method of fabricating same, at any wiring level of the chip, by utilizing a direct resist masking of the SiCr fuse layer to eliminate problems of mask damage and residual metal adjacent the fuse.
摘要翻译：通过电压脉冲或激光脉冲去除的SiCr微型电动机，用于重新布置集成电路中的各种部件，如实现阵列结构的冗余，以及在芯片的任何接线电平处制造相同的方法，通过利用SiCr熔丝层的直接抗蚀剂掩模来消除掩模损坏和保险丝附近的残留金属的问题。

8. 发明授权

US5285099A SiCr microfuses 失效
标题翻译： SiCr微丝
公开(公告)号：US5285099A
公开(公告)日：1994-02-08
申请号：US990679
申请日：1992-12-15
申请人： Roy A. Carruthers , Fernand J. Dorleans , John A. Fitzsimmons , Richard Flitsch , James A. Jubinsky , Gerald R. Larsen , Geraldine C. Schwartz , Paul J. Tsang , Robert W. Zielinski
发明人： Roy A. Carruthers , Fernand J. Dorleans , John A. Fitzsimmons , Richard Flitsch , James A. Jubinsky , Gerald R. Larsen , Geraldine C. Schwartz , Paul J. Tsang , Robert W. Zielinski
IPC分类号： H01L23/525 , H01L27/118 , H01L27/02 , H01L , H01L29/46
CPC分类号： H01L23/5256 , H01L27/118 , H01L2924/0002 , Y10S148/055
摘要： A SiCr microfuse, deletable either by electrical voltage pulses or by laser pulses, for rerouting the various components in an integrated circuit, as where redundancy in array structures is implemented, and the method of fabricating same, at any wiring level of the chip, by utilizing a direct resist masking of the SiCr fuse layer to eliminate problems of mask damage and residual metal adjacent the fuse.
摘要翻译：通过电压脉冲或激光脉冲去除的SiCr微型电动机，用于重新布置集成电路中的各种部件，如实现阵列结构的冗余，以及在芯片的任何接线电平处制造相同的方法，通过利用SiCr熔丝层的直接抗蚀剂掩模来消除掩模损坏和保险丝附近的残余金属的问题。

9. 发明申请

US20110206934A1 GRAPHENE FORMATION UTILIZING SOLID PHASE CARBON SOURCES 有权
标题翻译：利用固相碳源的石墨形成
公开(公告)号：US20110206934A1
公开(公告)日：2011-08-25
申请号：US12710333
申请日：2010-02-22
申请人： Ageeth A. Bol , Roy A. Carruthers , Jack O. Chu , Alfred Grill , Christian Lavoie , Katherine L. Saenger , James C. Tsang
发明人： Ageeth A. Bol , Roy A. Carruthers , Jack O. Chu , Alfred Grill , Christian Lavoie , Katherine L. Saenger , James C. Tsang
IPC分类号： B32B9/00 , B32B15/04 , B05D3/02
CPC分类号： C01B31/0446 , B82Y30/00 , B82Y40/00 , C01B32/184 , Y10T428/30
摘要： A method for forming a single, few-layer, or multi-layer graphene and structure is described incorporating selecting a substrate having a buried layer of carbon underneath a metal layer, providing an ambient and providing a heat treatment to pass carbon through the metal layer to form a graphene layer on the metal layer surface or incorporating a metal-carbon layer which is heated to segregate carbon in the form of graphene to the surface or chemically reacting the metal in the metal-carbon layer with a substrate containing Si driving the carbon to the surface whereby graphene is formed.
摘要翻译：描述了形成单层，几层或多层石墨烯和结构的方法，其包括选择在金属层下方具有埋藏层的衬底的基底，提供环境并提供热处理以使碳通过金属层以在金属层表面上形成石墨烯层或掺入金属碳层，该金属碳层被加热以将石墨烯形式的碳分离到表面或使金属 - 碳层中的金属与含有驱动碳的Si的基板化学反应到形成石墨烯的表面。

10. 发明申请

US20100155456A1 METHOD AND PROCESS FOR REDUCING UNDERCOOLING IN A LEAD-FREE TIN-RICH SOLDER ALLOY 有权
标题翻译：无铅无铅焊料合金的减少方法和工艺
公开(公告)号：US20100155456A1
公开(公告)日：2010-06-24
申请号：US12536122
申请日：2009-08-05
申请人： GARETH G. HOUGHAM , KAMALESH K. SRIVASTAVA , SUNG K. KANG , DA-YUAN SHIH , BRIAN R. SUNDLOF , S. JAY CHEY , DONALD W. HENDERSON , DAVID R. DI MILIA , RICHARD P. FERLITA , ROY A. CARRUTHERS
发明人： GARETH G. HOUGHAM , KAMALESH K. SRIVASTAVA , SUNG K. KANG , DA-YUAN SHIH , BRIAN R. SUNDLOF , S. JAY CHEY , DONALD W. HENDERSON , DAVID R. DI MILIA , RICHARD P. FERLITA , ROY A. CARRUTHERS
IPC分类号： B23K31/02
CPC分类号： B23K1/19 , B23K35/262 , H05K3/3436 , H05K3/3463 , H05K2201/0215
摘要： Briefly, a novel material process is disclosed wherein one or more nucleation modifiers are added, in trace amounts, to a lead-free tin-rich solder alloy to produce a solder composition with reduce or suppressed undercooling temperature characteristics. The modifier being a substance which facilitates the reduction of extreme anisotropic properties associated with body-centered-tetragonal tin based lead-free solder. The addition of the nucleation modifiers to the solder alloy does not materially effect the solder composition's melting point. As such, balls of solder with the nucleated composition freeze while other solder balls within the array remain in the melt. This effectively enables one substrate to be pinned to another substrate by one or more predetermined solder balls to secure the package while the remaining solder joints are in the liquid state. Further, the addition of a trace amount of nucleation sites within the composition facilitates control over the number, size, and orientations of primary intermetallic compounds in tin rich crystallite grains. Moreover, trace amounts of one or more solid and/or insoluble nucleating modifiers within a given volume of solder reduces the size of average crystallites within the composition.
摘要翻译：简而言之，公开了一种新颖的材料方法，其中将一种或多种成核改性剂以微量添加到无铅富锡焊料合金中以产生具有降低或抑制的过冷温度特性的焊料组合物。该改性剂是有助于减少与体心四方锡锡基无铅焊料相关的极端各向异性的物质。将成核改性剂添加到焊料合金中不会实质上影响焊料组合物的熔点。因此，具有成核组合物的焊料球冻结，而阵列内的其它焊球保持在熔体中。这有效地使一个基板通过一个或多个预定的焊球被固定到另一个基板，以固定封装，而剩余的焊点处于液态。此外，在组合物中添加微量的成核位点有助于控制富锡微晶颗粒中初级金属间化合物的数量，尺寸和取向。此外，在给定体积的焊料中痕量的一种或多种固态和/或不溶性成核改性剂减少了组合物内平均微晶的尺寸。

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