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    • 3. 发明授权
    • Projection system for EUV lithography
    • EUV光刻投影系统
    • US07151592B2
    • 2006-12-19
    • US10454830
    • 2003-06-04
    • Russell HudymaHans-Jürgen MannUdo Dinger
    • Russell HudymaHans-Jürgen MannUdo Dinger
    • G03B27/54G03B27/72G02B5/10
    • G03F7/70233G02B17/0652G02B17/0657G03F7/70275
    • An EUV optical projection system includes at least six mirrors (M1, M2, M3, M4, M5, M6) for imaging an object (OB) to an image (IM). At least one mirror pair is preferably configured as an at least phase compensating mirror pair. The system is preferably configured to form an intermediate image (IMI) along an optical path from the object (OB) to the image (IM) between a second mirror (M2) and a third mirror (M3), such that a first mirror (M1) and the second mirror (M2) form a first optical group (G1) and the third mirror (M3), a fourth mirror (M4), a fifth mirror (M5) and a sixth mirror (M6) form a second optical group (G1). The system also preferably includes an aperture stop (APE) located along the optical path from the object (OB) to the image (IM) between the first mirror (M1) and the second mirror (M2). The second mirror (M2) is preferably convex, and the third mirror (M3) is preferably concave. The system preferably forms an image (IM) with a numerical aperture greater than 0.18.
    • EUV光学投影系统包括用于将物体(OB)成像到图像(IM)的至少六个反射镜(M 1,M 2,M 3,M 4,M 5,M 6)。 优选地,至少一个镜对配置为至少相位补偿镜对。 该系统优选地被配置成沿着从物体(OB)到第二反射镜(M 2)和第三反射镜(M 3)之间的图像(IM))的光路形成中间图像(IMI),使得第一 反射镜(M 1)和第二反射镜(M 2)形成第一光学组(G 1)和第三反射镜(M 3),第四反射镜(M 4),第五反射镜(M5)和第六反射镜 (M 6)形成第二光学组(G 1)。 该系统还优选地包括沿着从物体(OB)到第一反射镜(M 1)和第二反射镜(M 2)之间的图像(IM))的光路定位的孔径光阑(APE)。 第二镜(M 2)优选为凸面,第三镜(M 3)优选为凹面。 该系统优选地形成数值孔径大于0.18的图像(IM)。
    • 8. 发明授权
    • High numerical aperture ring field projection system for extreme
ultraviolet lithography
    • 用于极紫外光刻的高数值孔径环形场投影系统
    • US6033079A
    • 2000-03-07
    • US270127
    • 1999-03-15
    • Russell Hudyma
    • Russell Hudyma
    • G02B17/06G03F7/20G02B5/08
    • G03F7/70233G02B17/0657G03F7/70275
    • An all-refelctive optical system for a projection photolithography camera has a source of EUV radiation, a wafer and a mask to be imaged on the wafer. The optical system includes a first concave mirror, a second mirror, a third convex mirror, a fourth concave mirror, a fifth convex mirror and a sixth concave mirror. The system is configured such that five of the six mirrors receives a chief ray at an incidence angle less than substantially 12.degree., and each of the six mirrors receives a chief ray at an incidence angle of less than substantially 15.degree.. Four of the six reflecting surfaces have an aspheric departure of less than substantially 7 .mu.m. Five of the six reflecting surfaces have an aspheric departure of less than substantially 14 .mu.m. Each of the six refelecting surfaces has an aspheric departure of less than 16.0 .mu.m.
    • 用于投影光刻照相机的全反射光学系统具有EUV辐射源,要在晶片上成像的晶片和掩模。 光学系统包括第一凹面镜,第二镜,第三凸面镜,第四凹面镜,第五凸面镜和第六凹面镜。 该系统被配置为使得六个反射镜中的五个以小于大致12度的入射角接收主光线,并且六个反射镜中的每一个以大于15°的入射角接收主光线。 六个反射面中的四个具有小于大约7μm的非球面偏离。 六个反射面中的五个具有小于14μm的非球面偏离。 六个反射面中的每一个都具有小于16.0μm的非球面偏离。