专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US09054245B2 Doping an absorber layer of a photovoltaic device via diffusion from a window layer 有权
标题翻译：通过从窗口层的扩散来掺杂光伏器件的吸收层
公开(公告)号：US09054245B2
公开(公告)日：2015-06-09
申请号：US13410516
申请日：2012-03-02
申请人： Scott Daniel Feldman-Peabody , Robert Dwayne Gossman
发明人： Scott Daniel Feldman-Peabody , Robert Dwayne Gossman
IPC分类号： H01L21/00 , H01L31/0296 , H01L31/073
CPC分类号： H01L31/0288 , H01L31/0203 , H01L31/022483 , H01L31/02963 , H01L31/0445 , H01L31/073 , H01L31/1828 , H01L31/1864 , H01L31/1884 , Y02E10/543
摘要： Methods for doping an absorbent layer of a p-n heterojunction in a thin film photovoltaic device are provided. The method can include depositing a window layer on a transparent substrate, where the window layer includes at least one dopant (e.g., copper). A p-n heterojunction can be formed on the window layer, with the p-n heterojunction including a photovoltaic material (e.g., cadmium telluride) in an absorber layer. The dopant can then be diffused from the window layer into the absorber layer (e.g., via annealing).
摘要翻译：提供了在薄膜光伏器件中掺杂p-n异质结的吸收层的方法。该方法可以包括在透明衬底上沉积窗口层，其中窗口层包括至少一种掺杂剂（例如铜）。可以在窗口层上形成p-n异质结，其中p-n异质结在吸收层中包括光电材料（例如碲化镉）。掺杂剂然后可以从窗口层扩散到吸收层（例如，通过退火）。

2. 发明申请

US20140060635A1 PHOTOVOLTAIC DEVICES 有权
标题翻译：光伏器件
公开(公告)号：US20140060635A1
公开(公告)日：2014-03-06
申请号：US13601162
申请日：2012-08-31
申请人： Donald Franklin Foust , Hongbo Cao , Laura Anne Clark , Robert Andrew Garber , Scott Daniel Feldman-Peabody , Wyatt Keith Metzger , Yinghui Shan , Roman Shuba
发明人： Donald Franklin Foust , Hongbo Cao , Laura Anne Clark , Robert Andrew Garber , Scott Daniel Feldman-Peabody , Wyatt Keith Metzger , Yinghui Shan , Roman Shuba
IPC分类号： H01L31/0232
CPC分类号： H01L31/02963 , H01L31/03925 , H01L31/073 , Y02E10/543
摘要： Photovoltaic devices are presented. A photovoltaic device includes a window layer and a semiconductor layer including a semiconductor material disposed on window layer. The semiconductor layer includes a first region and a second region, the first region disposed proximate to the window layer, and the second region including a chalcogen-rich region, wherein the first region and the second region include a dopant, and an average atomic concentration of the dopant in the second region is greater than an average atomic concentration of the dopant in the first region.
摘要翻译：介绍了光伏器件。光电器件包括窗口层和包括设置在窗口层上的半导体材料的半导体层。所述半导体层包括第一区域和第二区域，所述第一区域设置在所述窗口层附近，所述第二区域包括富硫族元素区域，其中所述第一区域和所述第二区域包括掺杂剂，并且平均原子浓度在第二区域中的掺杂剂的平均原子浓度大于第一区域中的掺杂剂的平均原子浓度。

3. 发明申请

US20140004655A1 MANUFACTURING METHODS FOR SEMICONDUCTOR DEVICES 有权
标题翻译：半导体器件的制造方法
公开(公告)号：US20140004655A1
公开(公告)日：2014-01-02
申请号：US13538352
申请日：2012-06-29
申请人： Hongying Peng , Bastiaan Arie Korevaar , Jinbo Cao , Stephen Lorenco Araujo , Scott Daniel Feldman-Peabody , Robert Dwayne Gossman
发明人： Hongying Peng , Bastiaan Arie Korevaar , Jinbo Cao , Stephen Lorenco Araujo , Scott Daniel Feldman-Peabody , Robert Dwayne Gossman
IPC分类号： H01L31/18
CPC分类号： H01L31/1828 , H01L31/073 , H01L31/18 , H01L31/1872 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： Embodiments of the present invention include a method. The method includes heating a layer stack. The layer stack includes a first layer comprising cadmium and tin, a metal layer disposed over the first layer, and a window layer disposed over the metal layer. Heating the stack includes transforming at least a portion of the first layer from an amorphous phase to a crystalline phase. Heating may be performed using any of various configurations, such as, for example, heating an individual stack, or using a face-to-face configuration of multiple stacks. The stack may be used for fabricating a photovoltaic device.
摘要翻译：本发明的实施例包括一种方法。该方法包括加热层叠。层叠包括包含镉和锡的第一层，设置在第一层上的金属层和设置在金属层上的窗口层。加热堆叠包括将第一层的至少一部分从非晶相转变为结晶相。可以使用各种配置中的任何一种来执行加热，例如加热单个堆叠，或者使用多个堆叠的面对面配置。堆叠可以用于制造光伏器件。

4. 发明申请

US20130112257A1 COMPOSITE ENCAPSULATION MATERIAL FOR PHOTOVOLTAIC DEVICES AND METHODS OF THEIR MANUFACTURE 审中-公开
标题翻译：光伏器件的复合材料及其制造方法
公开(公告)号：US20130112257A1
公开(公告)日：2013-05-09
申请号：US13290474
申请日：2011-11-07
申请人： Jed Emeron Isom , Scott Daniel Feldman-Peabody
发明人： Jed Emeron Isom , Scott Daniel Feldman-Peabody
IPC分类号： H01L31/0203 , H01L31/02
CPC分类号： H01L31/073 , H01L31/048 , H01L31/049 , Y02E10/543
摘要： Thin film photovoltaic devices are generally provided. The thin film photovoltaic devices can include a transparent substrate that has a first volumetric thermal expansion coefficient; a thin film stack comprising a transparent conductive oxide layer, a photovoltaic heterojunction, and back contact layer; and, a composite encapsulation material on the back contact layer. The thin film stack is generally positioned between the transparent substrate and the composite encapsulation material. The composite encapsulation material can have a second volumetric thermal expansion coefficient that is within about +/−40% of the first volumetric thermal expansion coefficient of the transparent substrate.
摘要翻译：通常提供薄膜光伏器件。薄膜光伏器件可以包括具有第一体积热膨胀系数的透明衬底; 包括透明导电氧化物层，光伏异质结和背接触层的薄膜堆叠; 以及在背面接触层上的复合包封材料。薄膜叠层通常位于透明基底和复合包封材料之间。复合包封材料可以具有在透明基底的第一体积热膨胀系数的约+/- 40％之内的第二体积热膨胀系数。

5. 发明授权

US08361229B2 Seal configuration for a system for continuous deposition of a thin film layer on a substrate 有权
标题翻译：用于在衬底上连续沉积薄膜层的系统的密封构造
公开(公告)号：US08361229B2
公开(公告)日：2013-01-29
申请号：US12765316
申请日：2010-04-22
申请人： Max William Reed , Russell Weldon Black , Scott Daniel Feldman-Peabody , Mark Jeffrey Pavol
发明人： Max William Reed , Russell Weldon Black , Scott Daniel Feldman-Peabody , Mark Jeffrey Pavol
IPC分类号： C23C16/00
CPC分类号： H01L31/1876 , C23C14/0629 , C23C14/24 , C23C14/562 , H01L31/1828 , Y02E10/543 , Y02P70/521
摘要： An apparatus and associated method of operation is provided for vapor deposition of a sublimated source material, such as CdTe, as a thin film on discrete photovoltaic (PV) module substrates that are conveyed in a continuous, non-stop manner through the apparatus. The apparatus includes a deposition head configured for receipt and sublimation of the source material. The deposition head has a distribution plate at a defined distance above a horizontal conveyance plane of an upper surface of the substrates conveyed through a deposition area within the apparatus. The sublimated source material moves through the distribution plate and deposits onto the upper surface of the substrates as they are conveyed through the deposition area. The substrates move into and out of the deposition area through entry and exit slots that are defined by transversely extending entrance and exit seals. The seals are disposed at a gap distance above the upper surface of the substrates that is less than the distance or spacing between the upper surface of the substrates and the distribution plate. The seals have a ratio of longitudinal length (in the direction of conveyance of the substrates) to gap distance of from about 10:1 to about 100:1.
摘要翻译：提供了一种装置和相关联的操作方法，用于将升华的源材料（例如CdTe）蒸发沉积在离散的光伏（PV）模块衬底上，该薄膜以连续且不间断的方式通过该设备输送。该装置包括被配置为用于接收和升华源材料的沉积头。沉积头具有在通过设备内的沉积区域输送的基板的上表面的水平输送平面上方的限定距离处的分布板。升华的源材料通过分布板移动，并且在通过沉积区域被输送时沉积到基板的上表面上。基板通过由横向延伸的入口和出口密封限定的入口和出口槽进入和离开沉积区域。密封件设置在基板的上表面之上的间隙距离处，该距离小于基板的上表面与分布板之间的距离或间隔。密封件具有纵向长度（基板的输送方向）与间隙距离的比例为约10:1至约100:1。

6. 发明授权

US08349144B2 Methods of sputtering using a non-bonded semiconducting target 有权
标题翻译：使用非键合半导体靶的溅射方法
公开(公告)号：US08349144B2
公开(公告)日：2013-01-08
申请号：US12892360
申请日：2010-09-28
申请人： Russell Weldon Black , Robert Dwayne Gossman , Patrick Lynch O'Keefe , Scott Daniel Feldman-Peabody
发明人： Russell Weldon Black , Robert Dwayne Gossman , Patrick Lynch O'Keefe , Scott Daniel Feldman-Peabody
IPC分类号： C23C14/34
CPC分类号： H01J37/34 , H01J37/3414 , H01J37/3426 , H01J37/3435
摘要： A sputtering cathode is generally provided. The sputtering cathode can include a semiconducting target (e.g., a cadmium sulfide target, a cadmium tin oxide target, etc.) defining a sputtering surface and a back surface opposite to the sputtering surface. A backing plate can be positioned facing the back surface of the target and non-bonded to the back surface of the target. A non-bonding attachment mechanism can removably hold the target within the sputtering cathode such that the back surface is facing the backing plate during sputtering.
摘要翻译：通常提供溅射阴极。溅射阴极可以包括限定溅射表面的半导体靶（例如，硫化镉靶，镉锡氧化物靶等）和与溅射表面相对的后表面。背板可以面向目标的后表面定位，并且不粘合到目标的后表面。非接合附接机构可移除地将靶保持在溅射阴极内，使得背面在溅射期间面向背板。

7. 发明授权

US08247683B2 Thin film interlayer in cadmium telluride thin film photovoltaic devices and methods of manufacturing the same 有权
标题翻译：碲化镉薄膜光电器件中的薄膜夹层及其制造方法
公开(公告)号：US08247683B2
公开(公告)日：2012-08-21
申请号：US12639037
申请日：2009-12-16
申请人： Jonathan Mack Frey , Robert Dwayne Gossmann , Mehran Sadeghi , Scott Daniel Feldman-Peabody , Jennifer A. Drayton , Victor Kaydanov
发明人： Jonathan Mack Frey , Robert Dwayne Gossmann , Mehran Sadeghi , Scott Daniel Feldman-Peabody , Jennifer A. Drayton , Victor Kaydanov
IPC分类号： H01L31/0296 , H01L31/0336
CPC分类号： H01L31/073 , H01L31/1836 , H01L31/1864 , Y02E10/543 , Y02P70/521
摘要： A cadmium telluride thin film photovoltaic device is provided having a thin film interlayer positioned between a cadmium sulfide layer and a cadmium telluride layer. The thin film interlayer can be an oxide thin film layer (e.g., an amorphous silica layer, a cadmium stannate layer, a zinc stannate layer, etc.) or a nitride film, and can act as a chemical barrier at the p-n junction to inhibit ion diffusion between the layers. The device can include a transparent conductive layer on a glass superstrate, a cadmium sulfide layer on the transparent conductive layer, a thin film interlayer on the cadmium sulfide layer, a cadmium telluride layer on the thin film interlayer, and a back contact on the cadmium telluride layer. Methods are also provided of manufacturing such devices.
摘要翻译：提供了一种碲化镉薄膜光伏器件，其具有位于硫化镉层和碲化镉层之间的薄膜中间层。薄膜中间层可以是氧化物薄膜层（例如，无定形二氧化硅层，锡酸镉层，锡酸锌层等）或氮化物膜，并且可以在pn结上作为化学屏障以抑制层之间的离子扩散。该装置可以包括玻璃上的透明导电层，透明导电层上的硫化镉层，硫化镉层上的薄膜中间层，薄膜中间层上的碲化镉层和镉上的背接触碲化物层还提供了制造这种装置的方法。

8. 发明授权

US08241938B2 Methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device 有权
标题翻译：形成用于碲化镉基薄膜光伏器件的导电透明氧化物膜层的方法
公开(公告)号：US08241938B2
公开(公告)日：2012-08-14
申请号：US12829563
申请日：2010-07-02
申请人： Scott Daniel Feldman-Peabody , Robert Dwayne Gossman
发明人： Scott Daniel Feldman-Peabody , Robert Dwayne Gossman
IPC分类号： H01L21/00
CPC分类号： H01L21/02483 , H01L21/02491 , H01L21/02557 , H01L21/0262 , H01L21/02631 , H01L31/022466 , H01L31/073 , H01L31/1828 , H01L31/1836 , H01L31/1884 , Y02E10/543 , Y02P70/521
摘要： Methods for forming a conductive oxide layer on a substrate are provided. The method can include sputtering a transparent conductive oxide layer (“TCO layer”) on a substrate from a target (e.g., including cadmium stannate) at a sputtering temperature of about 10° C. to about 100° C. The TCO layer can then be annealed in an anneal temperature comprising cadmium at an annealing temperature of about 500° C. to about 700° C. The method of forming the TCO layer can be used in a method for manufacturing a cadmium telluride based thin film photovoltaic device, further including forming a cadmium sulfide layer over the transparent conductive oxide layer and forming a cadmium telluride layer over the cadmium sulfide layer.
摘要翻译：提供了在基板上形成导电氧化物层的方法。该方法可以包括在约10℃至约100℃的溅射温度下从靶（例如，包括锡酸镉）在衬底上溅射透明导电氧化物层（“TCO层”）。然后可以将TCO层在约500℃〜约700℃的退火温度下在包含镉的退火温度下退火。形成TCO层的方法可用于制造碲化镉基薄膜光伏器件的方法，该方法还包括在透明导电氧化物层上形成硫化镉层，并在硫化镉层上形成碲化镉层。

9. 发明授权

US08236601B2 Apparatus and methods of forming a conductive transparent oxide film layer for use in a cadmium telluride based thin film photovoltaic device 有权
标题翻译：形成用于碲化镉基薄膜光伏器件的导电透明氧化物膜层的设备和方法
公开(公告)号：US08236601B2
公开(公告)日：2012-08-07
申请号：US12829544
申请日：2010-07-02
申请人： Scott Daniel Feldman-Peabody , Russell Weldon Black
发明人： Scott Daniel Feldman-Peabody , Russell Weldon Black
IPC分类号： H01L21/283
CPC分类号： C23C14/086 , C23C14/56 , C23C14/5806 , C23C14/5846 , H01L31/1884 , Y02E10/50
摘要： Methods for forming a TCO layer on a substrate are generally provided and include sputtering a TCO layer on a substrate from a target including cadmium stannate. A cap material (e.g., including cadmium) is deposited onto an outer surface of an indirect anneal system, and the TCO layer can be annealed at an anneal temperature while in contact with or within about 10 cm of the cap material. An anneal oven is also generally provided and includes an indirect anneal system defining a deposition surface and an anneal surface such that a cap material deposited on the anneal surface of the indirect anneal system is positioned to be in contact with or within about 10 cm of a thin film on the substrate. A cap material source can be positioned to deposit the cap material onto the deposition surface such that the anneal surface comprises the cap material.
摘要翻译：通常提供在基板上形成TCO层的方法，包括从包括锡酸镉的靶溅射TCO层在基板上。覆盖材料（例如包括镉）被沉积到间接退火系统的外表面上，并且TCO层可以在退火温度下退火，同时与帽材料接触或在约10cm内。还通常提供退火炉，并且包括限定沉积表面和退火表面的间接退火系统，使得沉积在间接退火系统的退火表面上的盖材料被定位成接触或者在约10cm 基材上的薄膜。盖材料源可以被定位成将盖材料沉积到沉积表面上，使得退火表面包括盖材料。

10. 发明申请

US20120164784A1 INTEGRATED DEPOSITION OF THIN FILM LAYERS IN CADMIUM TELLURIDE BASED PHOTOVOLTAIC MODULE MANUFACTURE 审中-公开
标题翻译：基于碲化镉的光伏组件制造薄膜层的集成沉积
公开(公告)号：US20120164784A1
公开(公告)日：2012-06-28
申请号：US12977139
申请日：2010-12-23
申请人： Scott Daniel Feldman-Peabody , Russell Weldon Black , Robert Dwayne Gossman , Brian Robert Murphy , Mark Jeffrey Pavol
发明人： Scott Daniel Feldman-Peabody , Russell Weldon Black , Robert Dwayne Gossman , Brian Robert Murphy , Mark Jeffrey Pavol
IPC分类号： H01L31/18 , C23C14/34
CPC分类号： H01L31/073 , H01J37/32899 , H01J37/3402 , H01L21/02562 , H01L21/02631 , Y02E10/543 , Y02P70/521
摘要： Apparatus and processes for thin film deposition of semiconducting layers in the formation of cadmium telluride thin film photovoltaic device are provided. The apparatus includes a series of integrally connected chambers, such as a load vacuum chamber connected to a load vacuum pump; a sputtering deposition chamber; a vacuum buffer chamber; and, a vapor deposition chamber. A conveyor system is operably disposed within the apparatus and configured for transporting substrates in a serial arrangement into and through the load vacuum chamber, the sputtering deposition chamber, the vacuum buffer chamber, and the vapor deposition chamber at a controlled speed. The sputtering deposition chamber; the vacuum buffer chamber; and the vapor deposition chamber are integrally connected such that the substrates being transported through the apparatus are kept at a system pressure less than about 760 Torr.
摘要翻译：提供了在形成碲化镉薄膜光伏器件中半导体层的薄膜沉积的装置和工艺。该装置包括一系列整体连接的室，例如连接到负载真空泵的负载真空室; 溅射沉积室; 真空缓冲室; 和蒸镀室。传送系统可操作地设置在设备内，并且被配置用于以受控的速度将串行装置中的基板输送到并通过负载真空室，溅射沉积室，真空缓冲室和气相沉积室。溅射沉积室; 真空缓冲室; 并且蒸镀室一体地连接，使得通过设备输送的基板保持在小于约760托的系统压力。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式