专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明授权

US08124232B2 Coated conductive powder and conductive adhesive using the same 有权
标题翻译：涂覆导电粉末和使用其的导电胶
公开(公告)号：US08124232B2
公开(公告)日：2012-02-28
申请号：US12738029
申请日：2008-10-21
申请人： Shinji Abe
发明人： Shinji Abe
IPC分类号： B32B5/66
CPC分类号： H01B1/22 , C08K3/10 , C08K5/3445 , C09J9/02 , C09J163/00 , C23C18/1635 , C23C18/1651 , C23C18/1689 , C23C18/30 , C23C18/32 , C23C18/42 , H05K3/323 , H05K2201/0209 , H05K2201/0224 , Y10T428/2991 , Y10T428/2993 , Y10T428/2996 , Y10T428/2998
摘要： It is an object of the present invention to provide a coated conductive powder particularly useful as the conductive filler of an anisotropic conductive adhesive used for electrically interconnecting circuit boards, circuit parts, and the like, and a conductive adhesive that can provide connection with high electrical reliability even for the connection of the electrodes of miniaturized electronic parts, such as IC chips, and circuit boards. The coated conductive powder of the present invention is a coated conductive powder obtained by coating the surfaces of conductive particles with an insulating substance, wherein the insulating substance is a powdery, thermally latent curing agent. Also, in the present invention, the particle surfaces of the coated conductive powder are further coated with insulating inorganic fine particles.
摘要翻译：本发明的目的是提供一种特别用作用于将电路板，电路部件等电连接的各向异性导电粘合剂的导电填料特别有用的涂覆导电粉末，以及可提供与高电气连接的导电粘合剂即使对于诸如IC芯片的小型化电子部件的电极和电路板的连接也是可靠的。本发明的涂覆导电粉末是通过用绝缘物质涂覆导电颗粒的表面而获得的涂覆的导电粉末，其中绝缘物质是粉末状的热潜固化剂。此外，在本发明中，涂覆的导电粉末的颗粒表面进一步涂覆绝缘无机细颗粒。

2. 发明授权

US08041995B2 Method and system for resetting fault tolerant computer system 有权
标题翻译：复位容错计算机系统的方法和系统
公开(公告)号：US08041995B2
公开(公告)日：2011-10-18
申请号：US11304575
申请日：2005-12-16
申请人： Shinji Abe
发明人： Shinji Abe
IPC分类号： G06F11/00
CPC分类号： G06F11/1679 , G06F11/1645 , G06F11/1658
摘要： There is disclosed a method capable of resetting a fault tolerant computer in complete synchronization among modules. The method includes a step of generating a reset requesting signal by one of the modules, a step of dividing the reset requesting signal to first and second reset requesting signals, a step of transmitting the second reset requesting signal to the other module, a step of delaying the first reset requesting signal in the one module by a time required for transmitting the second reset requesting signal to the other module, a step of resetting at least one CPU included in the one module by a first CPU reset signal generated based on the first reset requesting signal delayed in the one module, and a step of resetting at least one CPU included in the other module by a second CPU reset signal generated based on the second reset requesting signal transmitted to the other module.
摘要翻译：公开了能够在模块之间完全同步地重置容错计算机的方法。该方法包括通过模块之一生成复位请求信号的步骤，将复位请求信号划分为第一和第二复位请求信号的步骤，向另一模块发送第二复位请求信号的步骤，步骤将所述一个模块中的所述第一复位请求信号延迟传输所述另一个模块所需的时间;通过基于所述第一复位请求信号生成的第一CPU复位信号来复位所述一个模块中包括的至少一个CPU的步骤在一个模块中延迟的复位请求信号，以及通过基于发送到另一个模块的第二复位请求信号而生成的第二CPU复位信号来复位包括在另一个模块中的至少一个CPU的步骤。

3. 发明授权

US07879684B2 Method for manufacturing semiconductor light-emitting element 有权
标题翻译：半导体发光元件的制造方法
公开(公告)号：US07879684B2
公开(公告)日：2011-02-01
申请号：US12711316
申请日：2010-02-24
申请人： Takafumi Oka , Masatsugu Kusunoki , Shinji Abe
发明人： Takafumi Oka , Masatsugu Kusunoki , Shinji Abe
IPC分类号： H01L21/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0421 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/3409
摘要： A semiconductor light-emitting device comprises: a semiconductor substrate; a semiconductor layer structure on the semiconductor substrate, including an active layer and a waveguide ridge; an electrode in contact with all of a top surface of the waveguide ridge; and an insulating film coating side faces of the waveguide ridge, side faces of the electrode, and ends, but not a center portion, of an upper face of the electrode.
摘要翻译：半导体发光器件包括：半导体衬底; 半导体衬底上的半导体层结构，包括有源层和波导脊; 与波导脊的所有顶表面接触的电极; 以及绝缘膜，其包括波导脊的侧面，电极的侧面，并且电极的上表面的端部而不是中心部分。

4. 发明申请

US20100265702A1 MULTI-WAVELENGTH SEMICONDUCTOR LASER DEVICE 有权
标题翻译：多波长半导体激光器件
公开(公告)号：US20100265702A1
公开(公告)日：2010-10-21
申请号：US12753136
申请日：2010-04-02
申请人： Shinji Abe
发明人： Shinji Abe
IPC分类号： F21V9/00
CPC分类号： H01S5/4025 , H01L2224/48091 , H01S5/02212 , H01S5/02252 , H01S5/4087 , H01L2924/00014
摘要： A multi-wavelength semiconductor laser device includes a plate stem; a prism shaped submount with a bottom face on a face of the stem; laser diodes having emission wavelengths different from each other are mounted on lateral sides of the submount so that their respective emission points are positioned at substantially the same distance from a center axis of the stem; and lead pins penetrating the stem are located along and opposite edge lines between adjacent pairs of the lateral sides of the submount.
摘要翻译：多波长半导体激光装置包括板杆; 棱柱形底座，其在所述杆的表面上具有底面; 具有彼此不同的发射波长的激光二极管安装在基座的侧面上，使得它们各自的发射点位于与杆的中心轴线基本相同的距离处; 并且贯穿杆的引导销沿着相邻的副安装座侧对之间的边缘线定位。

5. 发明申请

US20100219438A1 SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD FOR MANUFACTURING THE SAME 有权
标题翻译：半导体发光元件及其制造方法
公开(公告)号：US20100219438A1
公开(公告)日：2010-09-02
申请号：US12711316
申请日：2010-02-24
申请人： Takafumi Oka , Masatsugu Kusunoki , Shinji Abe
发明人： Takafumi Oka , Masatsugu Kusunoki , Shinji Abe
IPC分类号： H01L33/48 , H01L33/00
CPC分类号： H01S5/34333 , B82Y20/00 , H01S5/0421 , H01S5/0425 , H01S5/2009 , H01S5/22 , H01S5/3409
摘要： A semiconductor light-emitting device comprises: a semiconductor substrate; a semiconductor layer structure on the semiconductor substrate, including an active layer and a waveguide ridge; an electrode in contact with all of a top surface of the waveguide ridge; and an insulating film coating side faces of the waveguide ridge, side faces of the electrode, and ends, but not a center portion, of an upper face of the electrode.
摘要翻译：半导体发光器件包括：半导体衬底; 半导体衬底上的半导体层结构，包括有源层和波导脊; 与波导脊的所有顶表面接触的电极; 以及绝缘膜，其包括波导脊的侧面，电极的侧面，并且电极的上表面的端部而不是中心部分。

6. 发明申请

US20100151658A1 METHOD FOR MANUFACTURING NITRIDE SEMICONDUCTOR DEVICE 有权
标题翻译：制造氮化物半导体器件的方法
公开(公告)号：US20100151658A1
公开(公告)日：2010-06-17
申请号：US12534925
申请日：2009-08-04
申请人： Shinji Abe , Kazushige Kawasaki
发明人： Shinji Abe , Kazushige Kawasaki
IPC分类号： H01L21/20
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/3211 , H01S5/34333 , Y10S117/915
摘要： A method for manufacturing a nitride semiconductor device, comprises epitaxially growing a semiconductor layer of a GaN-based material on the Ga surface of a GaN substrate while the GaN substrate is mounted on a substrate holder the substrate warping during the epitaxial growth so that a epitaxial deposit is deposited on the N surface of the substrate; and subjecting the N surface of the GaN substrate to vacuum suction after the epitaxial growth of the semiconductor layer; removing the epitaxial deposit from the N side of the GaN substrate after the semiconductor layer has been epitaxially grown, and before the N surface of the n-type GaN substrate is subjected to vacuum suction.
摘要翻译：一种用于制造氮化物半导体器件的方法，包括在GaN衬底的Ga表面上外延生长GaN基材料的半导体层，同时在外延生长期间将GaN衬底安装在衬底保持器上的衬底翘曲，沉积物沉积在衬底的N表面上; 以及在半导体层的外延生长之后对GaN衬底的N表面进行真空吸附; 在半导体层已经外延生长之后，并且在n型GaN衬底的N表面经受真空抽吸之前，从GaN衬底的N侧除去外延沉积物。

7. 发明申请

US20090127661A1 NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME 审中-公开
标题翻译：氮化物半导体器件及其制造方法
公开(公告)号：US20090127661A1
公开(公告)日：2009-05-21
申请号：US12271946
申请日：2008-11-17
申请人： Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Hiroshi Kurokawa , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
发明人： Katsuomi Shiozawa , Kyozo Kanamoto , Toshiyuki Oishi , Hiroshi Kurokawa , Kazushige Kawasaki , Shinji Abe , Hitoshi Sakuma
IPC分类号： H01L29/20 , H01L21/31
CPC分类号： H01S5/32341 , H01S5/0425 , H01S5/22 , H01S2301/173
摘要： Semiconductor devices, in particular nitride semiconductor devices for use in the manufacture of laser diodes, prevent peeling-off of the electrode, and at the same time reduces the complexity of processes and a reduction in yield. A nitride semiconductor device according to the invention includes a P-type nitride semiconductor layer with a ridge on its surface, an SiO2 film covering at least the side face of the ridge, an adherence layer formed on a surface of the SiO2 film and composed mainly of silicon, and a P-type electrode formed on the upper surface of the ridge and on a surface of the adherence layer.
摘要翻译：半导体器件，特别是用于制造激光二极管的氮化物半导体器件，防止电极剥离，并且同时降低了工艺的复杂性和产量的降低。根据本发明的氮化物半导体器件包括其表面上具有脊的P型氮化物半导体层，至少覆盖脊的侧面的SiO 2膜，形成在SiO 2膜的表面上并且主要组成的粘附层的硅，以及形成在脊的上表面上和粘附层的表面上的P型电极。

8. 发明申请

US20080233668A1 METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译：制造半导体光学器件的方法
公开(公告)号：US20080233668A1
公开(公告)日：2008-09-25
申请号：US12049456
申请日：2008-03-17
申请人： Shinji Abe
发明人： Shinji Abe
IPC分类号： H01L33/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0202 , H01S5/028 , H01S5/162 , H01S5/2009 , H01S5/2214 , H01S5/34333
摘要： A method for manufacturing a semiconductor optical device includes: forming a laminated semiconductor structure of GaN-based materials on a semiconductor wafer, the laminated semiconductor structure forming a laser diode of GaN-based materials, including an active layer having a quantum well structure; cleaving the semiconductor wafer including the laminated semiconductor structure to expose a cleaved end face of the laminated semiconductor structure; and forming an SiO2 film on the cleaved end face and performing a heat treatment to cause Ga vacancy diffusion in the active layer to disorder the quantum well structure of the active layer.
摘要翻译：一种制造半导体光学器件的方法包括：在半导体晶片上形成GaN基材料的叠层半导体结构，所述叠层半导体结构形成GaN基材料的激光二极管，其包括具有量子阱结构的有源层; 将包含层叠半导体结构的半导体晶片切断，使层叠半导体结构的切断端面露出; 在切割端面上形成SiO 2膜，进行热处理，使有源层发生Ga空位扩散，使有源层的量子阱结构紊乱。

9. 发明申请

US20080090315A1 METHOD FOR MANUFACTURING SEMICONDUCTOR OPTICAL DEVICE 失效
标题翻译：制造半导体光学器件的方法
公开(公告)号：US20080090315A1
公开(公告)日：2008-04-17
申请号：US11868629
申请日：2007-10-08
申请人： Shinji Abe , Kazushige Kawasaki
发明人： Shinji Abe , Kazushige Kawasaki
IPC分类号： H01L21/00
CPC分类号： H01S5/22 , B82Y20/00 , H01S5/0425 , H01S5/2009 , H01S5/2214 , H01S5/34333
摘要： After a metal cap layer is laminated on a semiconductor laminated structure, a waveguide ridge is formed, the waveguide ridge is coated with an SiO2 film, and a resist is applied; then, a resist pattern is formed, the resist pattern exposing the surface of the SiO2 film on the top of the waveguide ridge, and burying the SiO2 film in channels with a resist film having a surface higher than the surface of the metal cap layer of the waveguide ridge and lower than the surface of the SiO2 film of the waveguide ridge; the SiO2 film is removed by dry etching, using the resist pattern as a mask. The metal cap layer is removed by wet etching, and a p-GaN layer of the waveguide ridge is exposed to form the electrode layer.
摘要翻译：在半导体层叠结构上层压金属覆盖层之后，形成波导脊，将波导脊涂覆有SiO 2膜，并施加抗蚀剂; 然后，形成抗蚀剂图案，抗蚀剂图案将波导脊的顶部上的SiO 2膜的表面曝光，并且在SiO 2膜中埋入SiO 2膜，具有比波导脊的金属盖层的表面高的表面的抗蚀剂膜，并且低于波导脊的SiO 2膜的表面; 通过干蚀刻除去SiO 2膜，使用抗蚀剂图案作为掩模。通过湿蚀刻去除金属盖层，并且暴露波导脊的p-GaN层以形成电极层。

10. 发明授权

US07157540B2 Olefinic polymer and process for producing the same 有权
标题翻译：烯烃聚合物及其制备方法
公开(公告)号：US07157540B2
公开(公告)日：2007-01-02
申请号：US11246075
申请日：2005-10-11
申请人： Satoru Ohtani , Shinji Abe , Hiroto Nishida
发明人： Satoru Ohtani , Shinji Abe , Hiroto Nishida
IPC分类号： C08F210/02
CPC分类号： B01J8/24 , B01J8/0015 , C08F4/65912 , C08F4/65916 , C08F4/65925 , C08F6/02 , C08F210/16 , Y10S526/943 , C08L23/00 , C08F2/001 , C08F2/005 , C08F2/34 , C08F210/14 , C08F2500/12 , C08F2500/18 , C08F2500/17
摘要： The olefinic polymer characterised in that the n-decane-soluble content thereof is 10% by weight or less and the content of a ligand having a cyclopentadienyl structure is 5 ppb by weight or less. The process for producing an olefinic polymer is a process of producing an olefinic polymer by (co)polymerizing olefins in a gas phase using a fluidized-bed reactor, the process comprising: a polymerization step of (co)polymerizing the olefins with allowing a saturated aliphatic hydrocarbon to exist in a concentration of 2 to 30 mol % in the fluidized-bed reactor and a ligand removing step involving a step of bringing the resulting (co)polymer into contact with a ligand-remover and a step of heating said (co)polymer which has been brought into contact with the ligand-remover.
摘要翻译：该烯烃类聚合物的特征在于，正癸烷可溶成分为10重量％以下，具有环戊二烯基结构的配体的含量为5ppb重量％以下。制备烯烃聚合物的方法是通过使用流化床反应器在气相中共聚合烯烃来生产烯烃聚合物的方法，该方法包括：（共）使烯烃聚合以允许饱和的聚合步骤在流化床反应器中以2至30mol％的浓度存在的脂族烃，以及涉及使所得（共）聚合物与配体去除剂接触的步骤的配体去除步骤，以及加热所述（共 - ）聚合物，其与配体去除剂接触。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式