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    • 8. 发明申请
    • CAPSULE-MEDICAL-DEVICE DEDICATED POWER SOURCE STARTER
    • CAPSULE-MEDICAL-DEVICE专用电源起动器
    • US20120238811A1
    • 2012-09-20
    • US13473000
    • 2012-05-16
    • Shinsuke TANAKA
    • Shinsuke TANAKA
    • A61B1/045
    • A61B1/041A61B1/00036A61B1/00144A61B2560/0209
    • A capsule-medical-device dedicated power source starter that allows switching, by an application of a magnetic field to a magnetic switch that is provided in an inside of a capsule medical device and has a particular sensitivity direction in the magnetic field, a driving of the capsule medical device from an OFF state to an ON state, includes: an insertion part that is formed in a central axis direction and to which the capsule medical device is inserted so that a longitudinal axis direction of the capsule medical device is along the central axis direction; and a magnetic circuit that generates magnetic force lines which are substantially symmetric about the central axis as an axis of symmetry in any planar surfaces including the central axis of the insertion part.
    • 一种胶囊型医疗装置专用电源起动器,其能够通过对设置在胶囊型医疗装置的内部的具有特定的磁场灵敏度方向的磁性开关施加磁场来切换, 胶囊型医疗装置从OFF状态到ON状态包括:插入部,其形成在中心轴方向上,并且胶囊型医疗装置插入该插入部,使得胶囊型医疗装置的纵轴方向沿着中心 轴方向 以及产生磁力线的磁路,所述磁力线在包括插入部分的中心轴线的任何平面的表面中产生围绕中心轴线基本对称的对称轴。
    • 10. 发明授权
    • Semiconductor optical amplifier
    • 半导体光放大器
    • US07859746B2
    • 2010-12-28
    • US12191418
    • 2008-08-14
    • Ken MoritoSusumu YamazakiShinsuke Tanaka
    • Ken MoritoSusumu YamazakiShinsuke Tanaka
    • H01S5/343
    • H01S5/1082H01S5/1014H01S5/1085H01S5/32366H01S5/50H01S5/5009H01S2301/02
    • A polarization-independent SOA is provided which uses an InP substrate (11) as a semiconductor substrate and uses GaInNAs having introduced tensile strain as an active layer (14). With this configuration, the polarization independence is achieved by introducing the tensile strain, and high saturation optical output power is realized by reducing the film thickness of the active layer (14) as well as the gain peak wavelength is increased by reducing the band gap of the active layer (14) through use of GaInNAs made by adding nitrogen (N) to GaInAs as a material of the active layer (14) so as to achieve high gain especially in C-band and L-band even when band filling exits at the time of injecting a high current into the active layer (14).
    • 提供了使用InP衬底(11)作为半导体衬底并且使用具有引入的拉伸应变的GaInNA作为有源层(14)的偏振无关的SOA。 通过这种结构,通过引入拉伸应变来实现极化独立性,并且通过降低有源层(14)的膜厚度来实现高饱和光输出功率,并且通过降低有源层(14)的带隙来增加增益峰值波长 通过使用通过将氮(N)添加到GaInAs作为有源层(14)的材料而制成的GaInNA,以便即使在带填充离开时也实现高增益,特别是在C带和L带中,有源层(14) 将高电流注入有源层(14)的时间。