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1. 发明授权

US09691650B2 Substrate transfer robot with chamber and substrate monitoring capability 有权
公开(公告)号：US09691650B2
公开(公告)日：2017-06-27
申请号：US12890281
申请日：2010-09-24
申请人： Shinichi Kurita , Takayuki Matsumoto , Suhail Anwar , Makoto Inagawa
发明人： Shinichi Kurita , Takayuki Matsumoto , Suhail Anwar , Makoto Inagawa
IPC分类号： H01L21/677 , H01L21/67
CPC分类号： H01L21/67742 , H01L21/67259
摘要： A method and apparatus for a transfer robot that having at least one image sensor disposed thereon is provided. The transfer robot includes a lift assembly having a first drive assembly for moving a first platform relative to a second platform in a first linear direction, an end effector assembly disposed on the second platform and movable in a second linear direction by a second drive assembly, the second linear direction being orthogonal to the first linear direction, at least one image sensor, and a lighting device associated with the at least one image sensor.

2. 发明授权

US09458538B2 Method and apparatus for sealing an opening of a processing chamber 有权
标题翻译：用于密封处理室的开口的方法和装置
公开(公告)号：US09458538B2
公开(公告)日：2016-10-04
申请号：US13349307
申请日：2012-01-12
申请人： Shinichi Kurita , Takayuki Matsumoto , Robin L. Tiner , John M. White , Suhail Anwar
发明人： Shinichi Kurita , Takayuki Matsumoto , Robin L. Tiner , John M. White , Suhail Anwar
IPC分类号： C23C16/455 , C23C16/54
CPC分类号： C23C16/54 , C23C16/45517
摘要： A method and apparatus for sealing an opening of a processing chamber are provided. In one embodiment, the invention generally provides a closure member integrated within a wall of a process chamber for sealing an opening within the wall of the chamber. In another embodiment, the invention provides a closure member configured to seal an opening in the wall of a processing chamber from the inside of the chamber.
摘要翻译：提供一种用于密封处理室的开口的方法和装置。在一个实施例中，本发明通常提供集成在处理室的壁内的封闭构件，用于密封腔室壁内的开口。在另一个实施例中，本发明提供了一种封闭构件，其构造成将处理室的壁中的开口与室的内部密封。

3. 发明授权

US09397380B2 Guided wave applicator with non-gaseous dielectric for plasma chamber 有权
标题翻译：带等离子体室的非气体介质的导波器
公开(公告)号：US09397380B2
公开(公告)日：2016-07-19
申请号：US13360652
申请日：2012-01-27
申请人： Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
发明人： Jozef Kudela , Tsutomu Tanaka , Carl A. Sorensen , Suhail Anwar , John M. White
IPC分类号： H01P3/16 , H01L21/02 , H05H1/46 , H01J37/32
CPC分类号： H01P3/16 , H01J37/32229 , H01L21/02 , H01L21/02104 , H05H1/46 , H05H2001/4622
摘要： A guided wave applicator comprising two electrically conductive waveguide walls and a waveguide dielectric. The volume of the waveguide dielectric is composed of non-gaseous dielectric material and is positioned between the two waveguide walls. The waveguide dielectric includes first and second longitudinal ends and includes first, second, third and fourth sides extending longitudinally between the two longitudinal ends. The first waveguide wall is positioned so that it covers the first side of the waveguide dielectric, and the second waveguide wall is positioned so that it covers the second side of the waveguide dielectric. In operation, electrical power can be supplied to one or both longitudinal ends of the waveguide dielectric, whereby the power can be coupled to a plasma through the exposed sides of the waveguide dielectric.
摘要翻译：导波装置，其包括两个导电波导壁和波导电介质。波导介质的体积由非气体电介质材料构成，并且位于两个波导壁之间。波导电介质包括第一和第二纵向端部，并且包括在两个纵向端部之间纵向延伸的第一，第二，第三和第四侧面。第一波导壁被定位成使得其覆盖波导电介质的第一侧，并且第二波导壁被定位成使得其覆盖波导电介质的第二侧。在操作中，可以向波导介质的一个或两个纵向端提供电力，由此可以通过波导电介质的暴露侧将功率耦合到等离子体。

4. 发明授权

US09324597B2 Vertical inline CVD system 有权
标题翻译：垂直在线CVD系统
公开(公告)号：US09324597B2
公开(公告)日：2016-04-26
申请号：US13098255
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： H01J37/32 , H01L21/67 , C23C16/458 , C23C16/46 , C23C16/511 , C23C16/54 , H01L21/677
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译：本发明一般涉及具有能够处理多个基板的处理室的垂直CVD系统。多个基板设置在处理室内的处理源的相对侧上，但处理环境彼此不隔离。处理源是水平居中的垂直等离子体发生器，其允许在等离子体发生器的任一侧上同时处理多个基板，但彼此独立。该系统被布置为双系统，由此两个相同的处理线各自具有它们自己的处理室，彼此相邻布置。多个机器人用于从处理系统装载和卸载基板。每个机器人可以访问系统内的两条处理线。

5. 发明授权

US08124907B2 Load lock chamber with decoupled slit valve door seal compartment 有权
标题翻译：加载锁定室与分离的狭缝阀门密封隔间
公开(公告)号：US08124907B2
公开(公告)日：2012-02-28
申请号：US11782267
申请日：2007-07-24
申请人： Jae-Chull Lee , Suhail Anwar , Shinichi Kurita
发明人： Jae-Chull Lee , Suhail Anwar , Shinichi Kurita
IPC分类号： B23K10/00
CPC分类号： H01L21/67126 , H01L21/67201
摘要： Embodiments of the invention include a load lock chamber having a decoupled slit valve door seal compartment. In one embodiment, a load lock chamber includes a main assembly, a first slit valve door seal compartment and a seal assembly. The main assembly has a substrate transfer cavity formed therein. Two substrate access ports are formed through the main assembly and fluidly couple to the cavity. The first slit valve door seal compartment has an aperture disposed adjacent to and aligned with one of the access ports. The first slit valve door seal compartment is decoupled from the main assembly. The seal assembly couples the first slit valve door seal compartment to the main assembly.
摘要翻译：本发明的实施例包括具有解耦的狭缝阀门密封隔室的装载锁定室。在一个实施例中，负载锁定室包括主组件，第一狭缝阀门密封室和密封组件。主组件具有形成在其中的衬底传送腔。两个基板通道端口通过主组件形成并且流体耦合到空腔。第一狭缝阀门密封隔室具有邻近并与其中一个进入口相对设置的孔。第一个狭缝阀门密封隔间与主组件分离。密封组件将第一狭缝阀门密封隔间连接到主组件。

6. 发明申请

US20120031335A1 VERTICAL INLINE CVD SYSTEM 有权
标题翻译：立式CVD系统
公开(公告)号：US20120031335A1
公开(公告)日：2012-02-09
申请号：US13098255
申请日：2011-04-29
申请人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
发明人： Shinichi Kurita , Jozef Kudela , Suhail Anwar , John M. White , Dong-Kil Yim , Hans Georg Wolf , Dennis Zvalo , Makoto Inagawa , Ikuo Mori
IPC分类号： C23C16/511 , C23C16/458 , C23C16/455
CPC分类号： H01L21/67712 , C23C16/4587 , C23C16/46 , C23C16/463 , C23C16/511 , C23C16/54 , H01J37/32192 , H01J37/3222 , H01J37/32513 , H01J37/32522 , H01J37/32889 , H01J37/32899 , H01L21/67098 , H01L21/67126 , H01L21/67173 , H01L21/6719 , H01L21/67201
摘要： The present invention generally relates to a vertical CVD system having a processing chamber that is capable of processing multiple substrates. The multiple substrates are disposed on opposite sides of the processing source within the processing chamber, yet the processing environments are not isolated from each other. The processing source is a horizontally centered vertical plasma generator that permits multiple substrates to be processed simultaneously on either side of the plasma generator, yet independent of each other. The system is arranged as a twin system whereby two identical processing lines, each with their own processing chamber, are arranged adjacent to each other. Multiple robots are used to load and unload the substrates from the processing system. Each robot can access both processing lines within the system.
摘要翻译：本发明一般涉及具有能够处理多个基板的处理室的垂直CVD系统。多个基板设置在处理室内的处理源的相对侧上，但处理环境彼此不隔离。处理源是水平居中的垂直等离子体发生器，其允许在等离子体发生器的任一侧上同时处理多个基板，但彼此独立。该系统被布置为双系统，由此两个相同的处理线各自具有它们自己的处理室，彼此相邻布置。多个机器人用于从处理系统装载和卸载基板。每个机器人可以访问系统内的两条处理线。

7. 发明授权

US08061949B2 Multiple slot load lock chamber and method of operation 有权
标题翻译：多槽加载锁定室和操作方法
公开(公告)号：US08061949B2
公开(公告)日：2011-11-22
申请号：US12709713
申请日：2010-02-22
申请人： Shinichi Kurita , Suhail Anwar , Jae-Chull Lee
发明人： Shinichi Kurita , Suhail Anwar , Jae-Chull Lee
IPC分类号： B65G49/07
CPC分类号： H01L21/67201 , C23C14/566 , H01L21/67109 , H01L21/67126 , H01L21/67167 , H01L21/67178 , H01L21/6719 , H01L21/67742 , H01L21/67751 , Y10S414/139
摘要： Embodiments of the invention include a load lock chamber, a processing system having a load lock chamber and a method for transferring substrates between atmospheric and vacuum environments. In one embodiment, the method includes maintaining a processed substrate within a transfer cavity formed in a chamber body for two venting cycles. In another embodiment, the method includes transferring a substrate from a transfer cavity to a heating cavity formed in the chamber body, and heating the substrate in the heating cavity. In another embodiment, a load lock chamber includes a chamber body having substrate support disposed in a transfer cavity. The substrate support is movable between a first elevation and a second elevation. A plurality of grooves are formed in at least one of a ceiling or floor of the transfer cavity and configured to receive at least a portion of the substrate support when located in the second elevation.
摘要翻译：本发明的实施例包括负载锁定室，具有负载锁定室的处理系统和用于在大气和真空环境之间传送衬底的方法。在一个实施例中，该方法包括将经处理的基板保持在形成在室主体中的传送空腔内用于两个排气循环。在另一个实施例中，该方法包括将基底从传递腔转移到形成在腔体中的加热腔，以及加热加热腔中的基底。在另一个实施例中，负载锁定室包括具有设置在传送腔中的衬底支撑件的室主体。衬底支撑件可在第一高度和第二高度之间移动。多个槽形成在传送腔的天花板或地板中的至少一个中，并且被配置为当位于第二高度时容纳衬底支撑件的至少一部分。

8. 发明申请

US20100288197A1 ANODIZED SHOWERHEAD 有权
标题翻译：阳光淋浴
公开(公告)号：US20100288197A1
公开(公告)日：2010-11-18
申请号：US12779167
申请日：2010-05-13
申请人： Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L. Tiner , John M. White , Shinichi Kurita
发明人： Soo Young Choi , Suhail Anwar , Gaku Furuta , Beom Soo Park , Robin L. Tiner , John M. White , Shinichi Kurita
IPC分类号： C23C16/455 , C23C16/00
CPC分类号： C23C16/45565 , C23C16/4404 , C23C16/5096 , H01J37/32091 , H01J37/32449 , H01J37/32541 , H01J37/32559 , H01J37/32577
摘要： Embodiments disclosed herein generally relate to an apparatus having an anodized gas distribution showerhead. In large area, parallel plate RF processing chambers, mastering the RF return path can be challenging. Arcing is a frequent problem encountered in RF processing chambers. To reduce arcing in RF processing chambers, straps may be coupled to the susceptor to shorten the RF return path, a ceramic or insulating or anodized shadow frame may be coupled to the susceptor during processing, and an anodized coating may be deposited onto the edge of the showerhead that is nearest the chamber walls. The anodized coating may reduce arcing between the showerhead and the chamber walls and therefore enhance film properties and increase deposition rate.
摘要翻译：本文公开的实施方案通常涉及具有阳极氧化气体分配喷头的装置。在大面积的平行板RF处理室中，掌握RF返回路径可能具有挑战性。射频是RF处理室遇到的一个常见问题。为了减少RF处理室中的电弧，带可以耦合到基座以缩短RF返回路径，陶瓷或绝缘或阳极氧化的阴影框架可以在处理期间耦合到基座，并且阳极化涂层可以沉积在最靠近室壁的淋浴头。阳极化涂层可以减少喷头和室壁之间的电弧，并因此增强膜的性质并增加沉积速率。

9. 发明授权

US07822324B2 Load lock chamber with heater in tube 有权
标题翻译：带加热器的加载锁定室
公开(公告)号：US07822324B2
公开(公告)日：2010-10-26
申请号：US11782290
申请日：2007-07-24
申请人： Suhail Anwar , Jae-Chull Lee , Shinichi Kurita
发明人： Suhail Anwar , Jae-Chull Lee , Shinichi Kurita
IPC分类号： F26B3/30
CPC分类号： H01L21/67115 , C23C16/54 , H01L21/67201
摘要： Embodiments of the invention include a heated load lock chamber. In one embodiment, a heated load lock chamber includes a chamber body having a plurality of lamp assembles disposed at least partially therein. Each lamp assembly includes a transmissive tube housing a lamp. The transmissive tube extends into the chamber body and provides a pressure barrier isolating the lamp from the interior volume of the load lock chamber. In another embodiment, an open end of the transmissive tube extends through a sidewall of the chamber body. A closed end of the transmissive tube is surrounded by the interior volume of the chamber body and is supported below a top of the chamber body in a spaced apart relation. The open end of the tube is sealed to the sidewall of the chamber body such that the interior of the tube is open to atmosphere.
摘要翻译：本发明的实施例包括加热的负载锁定室。在一个实施例中，加热的负载锁定室包括具有至少部分地设置在其中的多个灯组件的室主体。每个灯组件包括容纳灯的透射管。透射管延伸到室主体中并提供将灯隔离到负载锁定室的内部空间的压力屏障。在另一个实施例中，透射管的开口端延伸穿过腔体的侧壁。透射管的封闭端被室主体的内部空间包围，并以间隔的关系支撑在腔室主体的顶部下方。管的开口端被密封到腔体的侧壁，使得管的内部对大气敞开。

10. 发明申请

US20080132080A1 Method of avoiding haze formation on surfaces of silicon-containing PECVD-deposited thin films 有权
标题翻译：在含硅PECVD沉积薄膜的表面上避免雾霾形成的方法
公开(公告)号：US20080132080A1
公开(公告)日：2008-06-05
申请号：US11607702
申请日：2006-12-01
申请人： Suhail Anwar , Chung-Hee Park , Beom Soo Park , Han Byoul Kim , Soo Young Choi , John M. White
发明人： Suhail Anwar , Chung-Hee Park , Beom Soo Park , Han Byoul Kim , Soo Young Choi , John M. White
IPC分类号： H01L21/31
CPC分类号： H01L21/02274 , C23C16/345 , H01L21/0217 , H01L21/02532 , H01L21/0262 , H01L21/3185 , H01L21/67161 , H01L21/67207 , H01L21/67236 , H01L29/66765 , H01L31/1804 , H01L31/202 , Y02E10/547 , Y02P70/521
摘要： A method of PECVD deposition of silicon-containing films has been discovered and further developed. The method is particularly useful when the films are deposited on substrates having surface areas which are larger than 25,000 cm2. The method prevents the deposition of partially reacted silicon-containing species which form a powdery material or haze (contaminant compound) on the substrate surface. The contaminant compounds are avoided by assuring that the power applied to form a plasma in the PECVD process is maintained, at least at a minimal level, until reactive silicon-containing precursor gases present above the surface of the substrate have been reacted or evacuated from the plasma processing area.
摘要翻译：已经发现并进一步开发了含硅膜的PECVD沉积方法。当膜沉积在具有大于25,000cm 2的表面积的基底上时，该方法特别有用。该方法防止在基材表面上沉积形成粉末状物质或雾度（污染物化合物）的部分反应的含硅物质。通过确保在PECVD工艺中施加以形成等离子体的功率至少保持最小水平，直到存在于衬底表面上方的反应性含硅前体气体已经从等离子处理区。

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