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1. 发明授权

US08992723B2 RF bus and RF return bus for plasma chamber electrode 有权
标题翻译：用于等离子体室电极的RF总线和RF返回总线
公开(公告)号：US08992723B2
公开(公告)日：2015-03-31
申请号：US12705600
申请日：2010-02-13
申请人： Carl A. Sorensen , Jozef Kudela , Robin L. Tiner , Suhail Anwar , John M. White
发明人： Carl A. Sorensen , Jozef Kudela , Robin L. Tiner , Suhail Anwar , John M. White
IPC分类号： H01L21/3065 , C23C16/505 , H01J37/32
CPC分类号： H01J37/32174 , H01J37/32091
摘要： For coupling RF power from an RF input of a plasma chamber to the interior of a plasma chamber, an RF bus conductor is connected between the RF input and a plasma chamber electrode. In one embodiment, an RF return bus conductor is connected to an electrically grounded wall of the chamber, and the RF bus conductor and the RF return bus conductor have respective surfaces that are parallel and face each other. In another embodiment, the RF bus conductor has a transverse cross section having a longest dimension oriented perpendicular to the surface of the plasma chamber electrode that is closest to the RF bus conductor.
摘要翻译：为了将来自等离子体室的RF输入的RF功率耦合到等离子体室的内部，RF总线导体连接在RF输入端和等离子体室电极之间。在一个实施例中，RF返回总线导体连接到室的电接地壁，并且RF总线导体和RF返回总线导体具有彼此平行并相对的相应表面。在另一个实施例中，RF总线导体具有垂直于等离子体室电极表面的最长尺寸的横截面，其最接近RF总线导体。

2. 发明授权

US08853098B2 Substrate support with gas introduction openings 有权
标题翻译：衬底支撑与气体导入孔
公开(公告)号：US08853098B2
公开(公告)日：2014-10-07
申请号：US13401755
申请日：2012-02-21
申请人： Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
发明人： Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
IPC分类号： H01L21/00 , H01L21/44 , H01L21/31 , H01L21/469 , H01L21/687 , H01L21/683
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。气袋可导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

3. 发明申请

US20130263782A1 FLIP EDGE SHADOW FRAME 审中-公开
标题翻译：卷边边框
公开(公告)号：US20130263782A1
公开(公告)日：2013-10-10
申请号：US13569064
申请日：2012-08-07
申请人： QUNHUA WANG , Soo Young Choi , Robin L. Tiner , John M. White , Gaku Furuta , Beom Soo Park
发明人： QUNHUA WANG , Soo Young Choi , Robin L. Tiner , John M. White , Gaku Furuta , Beom Soo Park
IPC分类号： C23C16/04
摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.
摘要翻译：本文描述了用于处理衬底的装置。用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面，以及与阴影框体连接的可拆卸唇缘。可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

4. 发明申请

US20130228124A1 SUBSTRATE SUPPORT WITH CERAMIC INSULATION 有权
标题翻译：基板支持与陶瓷绝缘
公开(公告)号：US20130228124A1
公开(公告)日：2013-09-05
申请号：US13773579
申请日：2013-02-21
申请人： Gaku FURUTA , John M. WHITE , Shinichi KURITA , Soo Young CHOI , Suhail ANWAR , Robin L. TINER
发明人： Gaku FURUTA , John M. WHITE , Shinichi KURITA , Soo Young CHOI , Suhail ANWAR , Robin L. TINER
IPC分类号： C23C16/458
CPC分类号： C23C16/458 , C23C16/4585 , H01J37/32559 , H01J37/32577 , H01J37/32715
摘要： Embodiments of the present invention generally relates to substrate supports for use in a plasma processing chamber. The substrate supports, which are metallic, have ceramic inserts to prevent arcing between the substrate support and the shadow frame used to protect the edges of the substrate support during processing. In large area substrate processing chambers, the shadow frame may comprise multiple pieces. The individual pieces may be coupled together, but spaced slightly apart by a gap to permit thermal expansion. Ceramic inserts are positioned on the substrate support so that when a shadow frame is positioned adjacent thereto, the ceramic inserts are located adjacent the gaps in the shadow frame. The ceramic inserts adjacent the gap prevent and/or reduce the arcing because the gaps are located over electrically insulating material rather than electrically conductive material.
摘要翻译：本发明的实施例一般涉及用于等离子体处理室的基板支撑件。金属的衬底支撑件具有陶瓷插入件，以防止衬底支撑件和用于在加工期间保护衬底支撑件的边缘的阴影框架之间的电弧。在大面积基板处理室中，阴影框架可以包括多个部件。单独的部件可以联接在一起，但间隔开间隔开以允许热膨胀。陶瓷插入件定位在基板支撑件上，使得当阴影框架相邻定位时，陶瓷插入件位于阴影框架中的间隙附近。邻近间隙的陶瓷插件防止和/或减少电弧，因为间隙位于电绝缘材料上而不是导电材料上。

5. 发明授权

US08381677B2 Prevention of film deposition on PECVD process chamber wall 有权
标题翻译：防止在PECVD工艺室壁上沉积膜
公开(公告)号：US08381677B2
公开(公告)日：2013-02-26
申请号：US11955575
申请日：2007-12-13
申请人： Beom Soo Park , Robin L. Tiner , Soo Young Choi , John M. White
发明人： Beom Soo Park , Robin L. Tiner , Soo Young Choi , John M. White
IPC分类号： C23C16/00 , C23C16/50 , C23F1/00 , H01L21/306
CPC分类号： C23C16/4401 , C23C16/5096 , H01J37/32623 , H01J37/32697
摘要： A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.
摘要翻译：提供了一种用于处理衬底的方法和设备。腔室主体包括腔室底部和具有狭缝阀的侧壁。包括支撑体的基板支撑件设置在室主体中。至少一个宽RF接地带的第一端与支撑体耦合，并且至少一个RF接地带的第二端与腔室底部联接。至少一个延伸杆沿着支撑体的外围边缘定位。该方法包括提供具有狭缝阀和衬底支撑件的处理室，向布置在衬底支撑件上方的分配板提供RF功率，使气体流过分布板，等离子体处理设置在衬底支架上的衬底，并减少发电的等离子体。

6. 外观设计

USD664249S1 Flow blocker plate 有权
标题翻译：阻流板
公开(公告)号：USD664249S1
公开(公告)日：2012-07-24
申请号：US29396608
申请日：2011-07-01
申请人： Qunhua Wang , Robin L. Tiner
设计人： Qunhua Wang , Robin L. Tiner

7. 发明授权

US08074599B2 Plasma uniformity control by gas diffuser curvature 有权
标题翻译：气体扩散器曲率等离子体均匀性控制
公开(公告)号：US08074599B2
公开(公告)日：2011-12-13
申请号：US11173210
申请日：2005-07-01
申请人： Soo Young Choi , Beom Soo Park , John M. White , Robin L. Tiner
发明人： Soo Young Choi , Beom Soo Park , John M. White , Robin L. Tiner
IPC分类号： C23C16/455 , C23F1/00 , H01L21/306 , C23C16/22 , C23C16/06
CPC分类号： H01J37/32449 , H01J37/3244
摘要： Embodiments of a gas distribution plate for distributing gas in a processing chamber are provided. In one embodiment, a gas distribution assembly for a plasma processing chamber comprises a diffuser plate with gas passages passing between its upstream and downstream sides and hollow cathode cavities at the downstream side of the gas passages. The downstream side of the diffuser plate has a curvature to improve the thickness uniformity and film property uniformity of thin films deposited by PECVD, particularly SiN and amorphous silicon films. The curvature is preferably described by an arc of a circle or ellipse, the apex thereof located at the center point of the diffuser plate. In one aspect, the hollow cathode cavity volume density, surface area density, or the cavity density of the diffuser increases from the center of the diffuser to the outer edge. Methods for manufacturing such a diffuser plate are also provided.
摘要翻译：提供了用于在处理室中分配气体的气体分配板的实施例。在一个实施例中，用于等离子体处理室的气体分配组件包括具有在其上游侧和下游侧之间通过气体通道的扩散板，并且在气体通道的下游侧具有空心阴极腔。扩散板的下游侧具有改善通过PECVD沉积的薄膜的厚度均匀性和膜特性均匀性的曲率，特别是SiN和非晶硅膜。该曲率优选地由圆或椭圆的圆弧描述，其顶点位于扩散板的中心点。在一个方面，空心阴极腔体积密度，表面积密度或扩散器的空腔密度从扩散器的中心增加到外边缘。还提供了制造这种扩散板的方法。

8. 发明申请

US20110146577A1 SHOWERHEAD WITH INSULATED CORNER REGIONS 审中-公开
标题翻译：具有绝缘角区域的淋浴
公开(公告)号：US20110146577A1
公开(公告)日：2011-06-23
申请号：US12975708
申请日：2010-12-22
申请人： SUHAIL ANWAR , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
发明人： SUHAIL ANWAR , John M. White , Soo Young Choi , Gaku Furuta , Shinichi Kurita , Carl Sorenson , Robin L. Tiner
IPC分类号： C23C16/455 , C23C16/458 , C23C16/50 , B05B1/14
CPC分类号： C23C16/4585 , C23C16/45565 , C23C16/5096 , H01J37/32174 , H01J37/32449 , H01J37/32541 , H01J37/3255
摘要： Embodiments of the present invention generally relate to a gas distribution showerhead having insulated corner regions to reduce arcing and improve deposition uniformity control. In one embodiment, the gas distribution showerhead is formed of a conductive material with material from the corner regions removed. Corner members formed substantially in the shape of the removed portion of corner regions are attached to the conductive showerhead. The corner members may be made of a material having electrical insulating properties, such as a ceramic or insulating polymer.
摘要翻译：本发明的实施方案一般涉及具有绝缘拐角区域以减少电弧放电并改善沉积均匀性控制的气体分配喷头。在一个实施例中，气体分配喷头由导电材料形成，其中去除了角部区域的材料。基本上形成角部区域的去除部分形状的角部件被附接到导电花洒。角部件可以由具有电绝缘性的材料制成，例如陶瓷或绝缘聚合物。

9. 发明申请

US20100196626A1 GROUND RETURN FOR PLASMA PROCESSES 有权
标题翻译：等离子体工艺的接地返回
公开(公告)号：US20100196626A1
公开(公告)日：2010-08-05
申请号：US12700484
申请日：2010-02-04
申请人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
发明人： Soo Young Choi , Robin L. Tiner , Shinichi Kurita , John M. White , Carl A. Sorensen , Jeffrey A. Kho , Suhail Anwar , Makoto Inagawa , Gaku Furuta
IPC分类号： C23C16/509
CPC分类号： C23C16/5096 , C23C16/4585 , H01J37/32091 , H01J37/32174 , H01J37/32568 , H01L21/67069
摘要： A method and apparatus for providing an electrically symmetrical ground or return path for electrical current between two electrodes is described. The apparatus includes at least on radio frequency (RF) device coupled to one of the electrodes and between a sidewall and/or a bottom of a processing chamber. The method includes moving one electrode relative to another and realizing a ground return path based on the position of the displaced electrode using one or both of a RF device coupled to a sidewall and the electrode, a RF device coupled to a bottom of the chamber and the electrode, or a combination thereof.
摘要翻译：描述了一种用于提供用于两个电极之间的电流的电对称接地或返回路径的方法和装置。该装置至少包括耦合到电极之一和处理室的侧壁和/或底部之间的射频（RF）装置。该方法包括相对于另一个电极移动一个电极，并且基于使用耦合到侧壁和电极的RF器件中的一个或两个的位移电极实现接地返回路径，耦合到腔室的底部的RF器件和电极或其组合。

10. 发明申请

US20100184290A1 SUBSTRATE SUPPORT WITH GAS INTRODUCTION OPENINGS 审中-公开
标题翻译：基础支持与气体介绍开幕
公开(公告)号：US20100184290A1
公开(公告)日：2010-07-22
申请号：US12686483
申请日：2010-01-13
申请人： Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
发明人： Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
IPC分类号： H01L21/28
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。气袋可导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

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