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    • 7. 发明申请
    • Methods of forming silicon dioxide layers, and methods of forming trench isolation regions
    • 形成二氧化硅层的方法以及形成沟槽隔离区的方法
    • US20060205175A1
    • 2006-09-14
    • US11362455
    • 2006-02-23
    • Sujit SharanGurtej Sandhu
    • Sujit SharanGurtej Sandhu
    • H01L21/76H01L21/31H01L21/469
    • H01L21/02164C23C16/045C23C16/402H01L21/02211H01L21/02274H01L21/31612H01L21/76224
    • A method of forming a silicon dioxide layer includes forming a high density plasma proximate a substrate, the plasma comprising silicon dioxide precursors; forming silicon dioxide from the precursors, the silicon dioxide being deposited over the substrate at a deposition rate; and while depositing, etching the deposited silicon dioxide with the plasma at an etch rate; a ratio of the deposition rate to the etch rate being at least about 4:1. Another method includes forming a high density plasma proximate a substrate; flowing gases into the plasma, at least some of the gases forming silicon dioxide; depositing the silicon dioxide formed from the gases over the substrate; and while depositing the silicon dioxide, maintaining a temperature of the substrate at greater than or equal to about 500° C. As an alternative, the method may include not cooling the substrate with a coolant gas while depositing the silicon dioxide.
    • 形成二氧化硅层的方法包括在基底附近形成高密度等离子体,所述等离子体包含二氧化硅前体; 从前体形成二氧化硅,二氧化硅以沉积速率沉积在衬底上; 并且在沉积时以蚀刻速率用等离子体蚀刻沉积的二氧化硅; 沉积速率与蚀刻速率的比率为至少约4:1。 另一种方法包括在基底附近形成高密度等离子体; 流入气体进入等离子体,形成二氧化硅的至少一些气体; 将由气体形成的二氧化硅沉积在衬底上; 并且同时沉积二氧化硅,将基底的温度保持在大于或等于约500℃。作为替代方案,该方法可以包括在沉积二氧化硅的同时不用冷却剂气体冷却基底。
    • 8. 发明授权
    • Methods of forming silicon dioxide layers, and methods of forming trench isolation regions
    • 形成二氧化硅层的方法以及形成沟槽隔离区的方法
    • US07018908B2
    • 2006-03-28
    • US10815065
    • 2004-03-30
    • Sujit SharanGurtej S. Sandhu
    • Sujit SharanGurtej S. Sandhu
    • H01L21/76
    • H01L21/02164C23C16/045C23C16/402H01L21/02211H01L21/02274H01L21/31612H01L21/76224
    • In one aspect, the invention includes a method of forming a silicon dioxide layer, comprising: a) forming a high density plasma proximate a substrate, the plasma comprising silicon dioxide precursors; b) forming silicon dioxide from the precursors, the silicon dioxide being deposited over the substrate at a deposition rate; and c) while depositing, etching the deposited silicon dioxide with the plasma at an etch rate; a ratio of the deposition rate to the etch rate being at least about 4:1. In another aspect, the invention includes a method of forming a silicon dioxide layer, comprising: a) forming a high density plasma proximate a substrate; b) flowing gases into the plasma, at least some of the gases forming silicon dioxide; c) depositing the silicon dioxide formed from the gases over the substrate; and d) while depositing the silicon dioxide, maintaining a temperature of the substrate at greater than or equal to about 500° C. In yet another aspect, the invention includes a method of forming a silicon dioxide layer, comprising: a) forming a high density plasma proximate a substrate; b) flowing gases into the plasma, at least some of the gases forming silicon dioxide; c) depositing the silicon dioxide formed from the gases over the substrate; and d) not cooling the substrate with a coolant gas while depositing the silicon dioxide.
    • 一方面,本发明包括形成二氧化硅层的方法,包括:a)在基底附近形成高密度等离子体,所述等离子体包含二氧化硅前体; b)从前体形成二氧化硅,二氧化硅以沉积速率沉积在衬底上; 和c)在沉积时,以蚀刻速率用等离子体蚀刻沉积的二氧化硅; 沉积速率与蚀刻速率的比率为至少约4:1。 另一方面,本发明包括形成二氧化硅层的方法,包括:a)在基底附近形成高密度等离子体; b)将气体流入等离子体,至少一些形成二氧化硅的气体; c)将由气体形成的二氧化硅沉积在衬底上; 和d)同时沉积二氧化硅,将基底的温度保持在大于或等于约500℃。在另一方面,本发明包括形成二氧化硅层的方法,包括:a)形成高的 靠近基底的密度等离子体; b)将气体流入等离子体,至少一些形成二氧化硅的气体; c)将由气体形成的二氧化硅沉积在衬底上; 和d)在沉积二氧化硅的同时不用冷却剂气体冷却衬底。