专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明专利

DE2408617B2 未知
公开(公告)号：DE2408617B2
公开(公告)日：1978-06-01
申请号：DE2408617
申请日：1974-02-22
申请人： HOJYO, TETSUYA, OSAKA (JAPAN)
发明人： HOJYO, TETSUYA, OSAKA (JAPAN)
IPC分类号： C25D5/02 , C25D7/06 , H01L23/50 , B05D1/32

2. 发明专利

DE2850219C2 未知
公开(公告)号：DE2850219C2
公开(公告)日：1988-06-16
申请号：DE2850219
申请日：1978-11-20
申请人： HOJYO, TETSUYA, OSAKA, JP
发明人： HOJYO, TETSUYA, OSAKA, JP
IPC分类号： C25D17/18

3. 发明专利

DE2631828C2 未知
公开(公告)号：DE2631828C2
公开(公告)日：1986-01-16
申请号：DE2631828
申请日：1976-07-15
申请人： HOJYO, TETSUYA, OSAKA, JP
发明人： HOJYO, TETSUYA, OSAKA, JP
IPC分类号： C25D17/20

4. 发明专利

DE2408617C3 未知
公开(公告)号：DE2408617C3
公开(公告)日：1979-02-08
申请号：DE2408617
申请日：1974-02-22
申请人： HOJYO, TETSUYA, OSAKA (JAPAN)
发明人： HOJYO, TETSUYA, OSAKA (JAPAN)
IPC分类号： C25D5/02 , C25D7/06 , H01L23/50 , B05D1/32 , B05D7/14

5. 发明授权

US08900524B2 Optical sensor 有权
标题翻译：光学传感器
公开(公告)号：US08900524B2
公开(公告)日：2014-12-02
申请号：US12934237
申请日：2009-03-17
申请人： Masahiro Yanagisawa , Takuya Nakanishi , Naonobu Shimamoto , Mikiko Saito , Tetsuya Osaka
发明人： Masahiro Yanagisawa , Takuya Nakanishi , Naonobu Shimamoto , Mikiko Saito , Tetsuya Osaka
IPC分类号： G01N33/543 , G01N21/55 , G01N21/65
CPC分类号： G01N21/554 , G01N21/658
摘要： There is provided a novel optical sensor utilizing a surface plasmon resonance technique which is capable of detecting a substance to be detected with high sensitivity independently of a wavelength of irradiated light and is capable of obtaining information, other than a refraction index, on the substance to be detected. At the center of a surface of a metallic film 2 which is formed on a substrate and has no aperture, a circular depression 4 with a diameter of 0.1 to 250 nm is formed and with the depression 4 defined as a center, a plurality of depressions 3 are concentrically formed at intervals of 450 to 530 nm.
摘要翻译：提供了一种利用表面等离子体共振技术的新型光学传感器，其能够独立于照射光的波长检测高灵敏度的物质，并且能够获得物质以外的折射指数以外的信息被检测。在形成在基板上并且没有孔的金属膜2的表面的中心处，形成直径为0.1〜250nm的圆形凹部4，将凹部4定义为中心，形成多个凹部 3以450-530nm的间隔同心地形成。

6. 发明申请

US20110195277A1 HIGH DENSITY MAGNETIC RECORDING MEDIUM AND MANUFACTURING METHOD THEREOF 审中-公开
标题翻译：高密度磁记录介质及其制造方法
公开(公告)号：US20110195277A1
公开(公告)日：2011-08-11
申请号：US12967508
申请日：2010-12-14
申请人： Tetsuya Osaka , Atsushi Sugiyama , Takuma Hachisu , Shuichi Shoji , Jun Mizuno , Hiroshi Sakai
发明人： Tetsuya Osaka , Atsushi Sugiyama , Takuma Hachisu , Shuichi Shoji , Jun Mizuno , Hiroshi Sakai
IPC分类号： G11B5/706 , G11B5/842 , B05D3/00 , B05D5/00
CPC分类号： G11B5/855
摘要： A high density magnetic recording medium including aggregates of magnetic nanoparticles arranged stably and efficiently in demarcated sections in the surface of a substrate is manufactured by the steps of forming a plurality of parallel tracks in the surface of the substrate, forming a plurality of minute recesses serially at approximately equal intervals in each of the tracks, casting a liquid dispersion of magnetic nanoparticles into the minute recesses, and evaporating dispersing medium from the liquid dispersion, thereby forming an aggregate of magnetic nanoparticles in each of the minute recesses.
摘要翻译：通过在衬底的表面中形成多个平行轨道的步骤，制造包括在衬底表面中的分隔部分中稳定且有效地布置的磁性纳米颗粒聚集体的高密度磁记录介质，从而形成多个微小凹槽在每个轨道中以大致相等的间隔，将磁性纳米颗粒的液体分散体注入到微小凹部中，并从分散体蒸发分散介质，从而在每个微小凹部中形成磁性纳米颗粒的聚集体。

7. 发明授权

US07838912B2 Semiconductor sensing field effect transistor, semiconductor sensing device, semiconductor sensor chip and semiconductor sensing device 有权
标题翻译：半导体感测场效应晶体管，半导体感测器件，半导体传感器芯片和半导体感测器件
公开(公告)号：US07838912B2
公开(公告)日：2010-11-23
申请号：US11660514
申请日：2005-03-11
申请人： Daisuke Niwa , Ichiro Koiwa , Tetsuya Osaka
发明人： Daisuke Niwa , Ichiro Koiwa , Tetsuya Osaka
IPC分类号： C12Q1/00
CPC分类号： G01N27/414
摘要： A semiconductor sensing field effect transistor uses an organic unimolecular film formed on a gate insulating layer. In the semiconductor sensing field effect transistor and a semiconductor sensing device, the gate insulating layer has a stack structure wherein a second silicon oxide layer is stacked on a first silicon oxide layer through a silicon nitride layer. A semiconductor sensor chip and the semiconductor sensing device are provided with a field effect transistor chip wherein the gate insulating layer, a source electrode and a drain electrode are integrated on a silicon board, a source electrode terminal wiring connected with the source electrode, and a drain electrode terminal wiring connected with the drain electrode. In the semiconductor sensor chip and the semiconductor sensing device, the transistor chip, the source electrode terminal wiring and the drain electrode terminal wiring are sealed so as to expose an edge part which is not connected with the gate insulating layer of the transistor chip and the source electrode of the source electrode terminal wiring, and an edge part which is not connected with the drain electrode of the drain electrode terminal wiring.
摘要翻译：半导体感测场效应晶体管使用形成在栅极绝缘层上的有机单分子膜。在半导体感测场效应晶体管和半导体感测装置中，栅极绝缘层具有堆叠结构，其中第二氧化硅层通过氮化硅层堆叠在第一氧化硅层上。半导体传感器芯片和半导体感测装置设置有场效应晶体管芯片，其中栅极绝缘层，源电极和漏电极集成在硅板上，源极端子布线与源极连接，以及漏极端子布线与漏电极连接。在半导体传感器芯片和半导体感测装置中，晶体管芯片，源极端子布线和漏极端子布线被密封，以暴露未与晶体管芯片的栅极绝缘层连接的边缘部分和源电极端子配线的源电极以及未与漏电极端子配线的漏电极连接的边缘部。

8. 发明申请

US20080079154A1 Laminated structure, very-large-scale integrated circuit wiring board, and method of formation thereof 失效
标题翻译：层压结构，超大规模集成电路布线板及其形成方法
公开(公告)号：US20080079154A1
公开(公告)日：2008-04-03
申请号：US11529535
申请日：2006-09-29
申请人： Tetsuya Osaka , Masahiro Yoshino
发明人： Tetsuya Osaka , Masahiro Yoshino
IPC分类号： H01L23/52
CPC分类号： H01L23/53238 , C23C18/1651 , C23C18/1893 , H01L21/288 , H01L21/76814 , H01L21/76826 , H01L21/76831 , H01L21/76843 , H01L21/76846 , H01L21/76864 , H01L21/76874 , H01L23/53295 , H01L2924/0002 , H01L2924/00
摘要： The laminated structure includes a substrate of low dielectric constant material of silicon compound and an electroless copper plating layer laminated thereon with a barrier layer. The barrier layer is interposed between the substrate and the copper layer, and the barrier layer is formed by electroless plating. And the laminated structure is characterized in that the barrier layer is formed on the substrate with a monomolecular layer of organosilane compound and a palladium catalyst which are interposed between the substrate and the barrier layer, the palladium catalyst modifies the terminal, adjacent to the barrier layer, of the monomolecular layer, and the barrier layer includes an electroless NiB plating layer which is disposed on the substrate side, and a electroless CoWP plating layer.The present invention makes it possible to coat the low dielectric constant material of silicon compound in a simple all-wet process with a firmly adhering barrier layer and an electroless copper plating layer as the wiring layer. the advantage of requiring. Thus, the laminated structure formed in this way includes a substrate of low dielectric constant material of silicon compound, a barrier layer, and a copper layer as the wiring layer formed by electroless plating, which firmly adhere to one another. In addition, the laminated structure is suitable for the copper wiring in a ULSI, particularly the one which is to be formed in a narrower trench than conventional one.
摘要翻译：层叠结构包括硅化合物的低介电常数材料的基板和层压有阻挡层的化学镀铜层。阻挡层插入在基板和铜层之间，通过无电镀形成阻挡层。层叠结构的特征在于，在基板上形成有分隔层的有机硅烷化合物和钯催化剂插入在基板和阻挡层之间的阻挡层，钯催化剂改变与阻挡层相邻的端子的阻挡层，并且阻挡层包括设置在基板侧的无电解NiB镀层和无电CoWP镀层。本发明使得可以以简单的全湿法将具有牢固粘合的阻挡层和化学镀铜层的硅化合物的低介电常数材料涂布作为布线层。要求的优点。因此，以这种方式形成的层叠结构包括硅化合物的低介电常数材料的衬底，阻挡层和作为通过无电镀形成的布线层的铜层，其彼此牢固地粘合。此外，该层压结构适用于ULSI中的铜布线，特别是在比常规的窄沟槽形成的布线中。

9. 发明授权

US07242553B2 Substrate for magnetic recording medium 失效
标题翻译：磁记录介质基板
公开(公告)号：US07242553B2
公开(公告)日：2007-07-10
申请号：US10935519
申请日：2004-09-07
申请人： Tetsuya Osaka , Toru Asahi , Tokihiko Yokoshima , Toshihiro Tsumori
发明人： Tetsuya Osaka , Toru Asahi , Tokihiko Yokoshima , Toshihiro Tsumori
IPC分类号： G11B5/66 , G11B5/70
CPC分类号： G11B5/667 , G11B5/00 , G11B5/7315 , G11B5/74 , G11B5/8404 , G11B2005/001 , G11B2005/0029
摘要： When a soft magnetic layer for a double layer type perpendicular magnetic recording medium is formed by a plating method, there is the problem of the occurrence of an isolated pulse noise called spike noise so that signal reproduction characteristics are lost. In order to solve this problem, provided are a surface-treated substrate for a magnetic recording medium comprising a substrate having a diameter of not more than 90 mm, and a soft magnetic plating layer comprising an alloy of at least two metals selected from the group consisting of Co, Ni and Fe, which is provided above the substrate, wherein the soft magnetic layer has a coercivity of less than 20 oersted (Oe) in a direction that is parallel to a substrate surface, and wherein a ratio of saturation magnetization to residual magnetization in a direction that is parallel to a surface of the substrate is from 4:1 to 4:3; and a magnetic recording medium comprising the magnetic recording medium substrate.
摘要翻译：当通过电镀法形成双层型垂直磁记录介质的软磁性层时，存在称为尖峰噪声的孤立脉冲噪声的问题，从而丢失了信号再现特性。为了解决这个问题，提供了一种用于磁记录介质的经表面处理的基板，其包括直径不大于90mm的基板，以及软磁性镀层，该软磁性镀层包含选自以下的至少两种金属由Co，Ni和Fe构成，其设置在衬底上方，其中软磁性层在平行于衬底表面的方向上具有小于20奥斯特（Oe）的矫顽力，并且其中饱和磁化强度与在平行于衬底表面的方向上的剩余磁化强度为4:1至4:3; 以及包括磁记录介质基板的磁记录介质。

10. 发明授权

US07135103B2 Preparation of soft magnetic thin film 有权
标题翻译：软磁薄膜的制备
公开(公告)号：US07135103B2
公开(公告)日：2006-11-14
申请号：US10816834
申请日：2004-04-05
申请人： Tetsuya Osaka , Tokihiko Yokoshima
发明人： Tetsuya Osaka , Tokihiko Yokoshima
IPC分类号： C25D5/18
CPC分类号： C25D3/562 , C25D5/18 , C25D5/50 , C25D17/002
摘要： A soft magnetic thin film of CoFe alloy having a high Br and low Hc is prepared by furnishing a plating tank including cathode and anode compartments which are separated by a diaphragm or salt bridge so as to permit charge transfer, but inhibit penetration of Fe ions, feeding a plating solution containing Co ions and divalent Fe ions to the cathode compartment, feeding an electrolyte solution to the anode compartment, immersing a substrate in the plating solution, immersing an anode in the electrolyte solution, electroplating, and heat treating the plated film at 100–550° C.; or by immersing a substrate and a soluble anode in a plating solution containing Co ions and divalent Fe ions, electroplating, and heat treating the plated film at 100–550° C.
摘要翻译：制备具有高Br和低Hc的CoFe合金的软磁性薄膜，其包括通过隔膜或盐桥隔开的阴极和阳极隔室的镀槽，以允许电荷转移，但抑制Fe离子的渗透，将含有Co离子和二价Fe离子的电镀液供给到阴极室，将电解质溶液供给到阳极室，将基板浸渍在电镀液中，将阳极浸渍在电解液中，电镀，并对镀膜进行热处理 100-550°C。或者将基板和可溶性阳极浸渍在含有Co离子和二价Fe离子的电镀溶液中，电镀，并在100-550℃下热处理该镀膜。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式