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1. 外观设计

USD582628S1 Skewered sausage 有权
标题翻译：串口香肠
公开(公告)号：USD582628S1
公开(公告)日：2008-12-16
申请号：US29283168
申请日：2007-08-07
申请人： Victor Mammana
设计人： Victor Mammana

2. 发明申请

US20080067494A1 Back-gated field emission electron source 有权
标题翻译：后门控场发射电子源
公开(公告)号：US20080067494A1
公开(公告)日：2008-03-20
申请号：US11904938
申请日：2007-09-28
申请人： Victor Mammana , Gary McGuire , Olga Shenderova
发明人： Victor Mammana , Gary McGuire , Olga Shenderova
IPC分类号： H01L29/06
CPC分类号： B82Y10/00 , H01J3/022 , H01J9/025 , Y10S977/939
摘要： A field emitter device consistent with certain embodiments has a substantially planar conductor forming a gate electrode. A conductive stripe forms a cathode on the insulating layer. An insulating layer covers at least a portion of the surface between the cathode and the gate. An anode is positioned above the cathode. An emitter structure, for example of carbon nanotubes is disposed on a surface of the cathodes closest to the anode. When an electric field is generated across the insulating layer, the cathode/emitter structure has a combination of work function and aspect ratio that causes electron emission from the emitter structure toward the anode at a field strength that is lower than that which causes emissions from other regions of the cathode. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
摘要翻译：与某些实施例一致的场发射器件具有形成栅电极的基本上平面的导体。导电条在绝缘层上形成阴极。绝缘层覆盖阴极和栅极之间的表面的至少一部分。阳极位于阴极上方。例如碳纳米管的发射极结构设置在最靠近阳极的阴极的表面上。当跨绝缘层产生电场时，阴极/发射极结构具有功函数和纵横比的组合，其导致电子从发射极结构向阳极发射的场强低于引起来自其它辐射的场强阴极的区域。该摘要不被认为是限制性的，因为其他实施例可能偏离本摘要中描述的特征。

3. 发明申请

US20050116214A1 Back-gated field emission electron source 审中-公开
标题翻译：后门控场发射电子源
公开(公告)号：US20050116214A1
公开(公告)日：2005-06-02
申请号：US10974895
申请日：2004-10-27
申请人： Victor Mammana , Gary McGuire , Olga Shenderova
发明人： Victor Mammana , Gary McGuire , Olga Shenderova
IPC分类号： H01J3/02 , H01J9/02 , H01L29/06
CPC分类号： B82Y10/00 , H01J3/022 , H01J9/025 , Y10S977/939
摘要： A field emitter device consistent with certain embodiments has a substantially planar conductor forming a gate electrode. A conductive stripe forms a cathode on the insulating layer. An insulating layer covers at least a portion of the surface between the cathode and the gate. An anode is positioned above the cathode. An emitter structure, for example of carbon nanotubes is disposed on a surface of the cathodes closest to the anode. When an electric field is generated across the insulating layer, the cathode/emitter structure has a combination of work function and aspect ratio that causes electron emission from the emitter structure toward the anode at a field strength that is lower than that which causes emissions from other regions of the cathode. This abstract is not to be considered limiting, since other embodiments may deviate from the features described in this abstract.
摘要翻译：与某些实施例一致的场发射器件具有形成栅电极的基本上平面的导体。导电条在绝缘层上形成阴极。绝缘层覆盖阴极和栅极之间的表面的至少一部分。阳极位于阴极上方。例如碳纳米管的发射极结构设置在最靠近阳极的阴极的表面上。当跨绝缘层产生电场时，阴极/发射极结构具有功函数和纵横比的组合，其导致电子从发射极结构向阳极发射的场强低于引起来自其它辐射的场强阴极的区域。该摘要不被认为是限制性的，因为其他实施例可能偏离本摘要中描述的特征。

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