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1. 发明申请

US20100101601A1 CLEANING EQUIPMENT AND CLEANING METHOD OF DEPOSITION MASK 失效
标题翻译：清洗设备和清洁方法沉积掩模
公开(公告)号：US20100101601A1
公开(公告)日：2010-04-29
申请号：US12551821
申请日：2009-09-01
申请人： Yoichi TAKAHARA , Fumio Kataoka , Kenji Yumiba , Kenji Katagiri , Ryo Izaki
发明人： Yoichi TAKAHARA , Fumio Kataoka , Kenji Yumiba , Kenji Katagiri , Ryo Izaki
IPC分类号： B08B3/00 , B08B7/04
CPC分类号： H01L21/67028
摘要： Equipment is realized which is capable of increasing the frequency of use of a deposition mask of an organic EL element and the recycle of an adhesive agent by efficiently cleaning the deposition mask with little damage and efficiently collecting the adhesive agent. A pulse laser is irradiated to a deposition mask to separate the deposition agent from the deposition mask. The separated deposition agent is sucked by a suction nozzle, and the deposition agent is separated from air by a cyclone and deposited on a bottom of the cyclone. Thereafter, a first valve is opened to collect the deposition agent in a deposition agent collection section. Then a second valve is opened to move the deposition agent to a deposition agent refining section to be refined. A third valve is opened to store the refined deposition agent in a deposition agent storage section. The deposition mask may be cleaned without being damaged to collect the deposition agent with high efficiency.
摘要翻译：实现了能够通过有效地清洁沉积掩模并且有效地收集粘合剂来增加有机EL元件的沉积掩模的使用频率和粘合剂的再循环的设备。将脉冲激光照射到沉积掩模以将沉积剂与沉积掩模分离。分离的沉积剂通过吸嘴吸入，并且沉积剂通过旋风分离器与空气分离并沉积在旋风分离器的底部。此后，打开第一阀门以将沉积剂收集在沉积剂收集部分中。然后打开第二个阀，以将沉积剂移动到要精炼的沉积剂精炼部分。第三阀被打开以将精制的沉积剂存储在沉积剂储存部分中。可以清洁沉积掩模而不损坏以高效率收集沉积剂。

2. 发明授权

US07227186B2 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US07227186B2
公开(公告)日：2007-06-05
申请号：US11123496
申请日：2005-05-04
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/20
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

3. 发明授权

US06716688B2 Irradiation of manufacturing a thin film transistor by laser irradiation 有权
标题翻译：通过激光照射制造薄膜晶体管的照射
公开(公告)号：US06716688B2
公开(公告)日：2004-04-06
申请号：US10299218
申请日：2002-11-18
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L2184
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

4. 发明授权

US06670638B2 Liquid crystal display element and method of manufacturing the same 有权
标题翻译：液晶显示元件及其制造方法
公开(公告)号：US06670638B2
公开(公告)日：2003-12-30
申请号：US09793972
申请日：2001-02-28
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Hironaru Yamaguchi , Yoshinobu Kimura , Makoto Ohkura , Hironobu Abe , Shigeo Shimomura , Masakazu Saitou , Michiko Takahashi
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Hironaru Yamaguchi , Yoshinobu Kimura , Makoto Ohkura , Hironobu Abe , Shigeo Shimomura , Masakazu Saitou , Michiko Takahashi
IPC分类号： H01L2904
CPC分类号： H01L29/66757 , G02F1/13454 , G02F1/1368 , G02F2202/104 , H01L29/78675
摘要： Disclosed is a polysilicon film adapted for use in a liquid crystal display, and method of manufacturing such film. In manufacturing the film, a native oxide layer formed on a surface of an amorphous silicon film is completely removed by a hydrofluoric acid solution, followed by immersing in an H2O2 solution to newly form an extremely thin oxide layer, prior to a crystallizing processing performed by a laser beam irradiation. The crystallizing processing forms a polysilicon film formed of crystal grains Preferentially oriented on the (111) plane in a direction parallel to the substrate surface, an average crystal grain size being not larger than 300 nm, the standard deviation of the grain sizes being not larger than 30% of the average grain size, and the standard deviation of the roughness being not larger than 10% of the average grain size.
摘要翻译：公开了适用于液晶显示器的多晶硅膜及其制造方法。在制造膜时，通过氢氟酸溶液将形成在非晶硅膜表面上的天然氧化物层完全除去，随后在H 2 O 2溶液中浸渍以形成极薄的氧化物层，然后在结晶处理之前进行激光束照射。结晶处理形成由晶粒形成的多晶硅膜，在（111）面上沿着平行于基板表面的方向优先取向，平均晶粒尺寸不大于300nm，晶粒尺寸的标准偏差不大超过平均粒径的30％，粗糙度的标准偏差不大于平均粒径的10％。

5. 发明授权

US07372561B2 Method and apparatus for inspecting defects and a system for inspecting defects 失效
标题翻译：用于检查缺陷的方法和装置以及检查缺陷的系统
公开(公告)号：US07372561B2
公开(公告)日：2008-05-13
申请号：US11139594
申请日：2005-05-31
申请人： Yukihiro Shibata , Shunji Maeda , Takafumi Okabe , Yoichi Takahara
发明人： Yukihiro Shibata , Shunji Maeda , Takafumi Okabe , Yoichi Takahara
IPC分类号： G01N21/00
CPC分类号： H01L21/67253 , G01N21/95607 , G01N2021/4792 , H01L21/67028 , H01L21/67057
摘要： The present invention relates to a high-sensitivity defect inspection method, apparatus, and system adapted for the fine-structuring of patterns; wherein, in addition to a cleaning tank which chemically cleans a sample and rinses the sample, a defect inspection apparatus having a liquid-immersion element by which the interspace between the sample and the objective lens of an optical system is filled with a liquid, and a drying tank which dries the sample, the invention uses liquid-immersion transfer means from said cleaning tank through said liquid-immersion means of said defect inspection apparatus to said drying tank so that the sample is transferred in a liquid-immersed state from said cleaning tank to said liquid-immersion means.
摘要翻译：本发明涉及一种适用于精细构图的高灵敏度缺陷检查方法，装置和系统，其特征在于，除了对样品进行化学清洗并冲洗样品的清洗槽以外，还具有具有液体浸渍元件的缺陷检查装置，通过该液浸元件将样品与光学系统的物镜之间的间隙填充液体，干燥箱，干燥箱，将所述清洗槽的浸液转移装置通过所述缺陷检查装置的浸液装置使用于所述干燥箱，使样品以浸液状态从所述清洗罐到所说的液浸装置。

6. 发明申请

US20060001051A1 Thin film semiconductor circuit, manufacturing method thereof, and image display apparatus utilizing the same thin film semiconductor circuit 审中-公开
标题翻译：薄膜半导体电路及其制造方法以及利用该薄膜半导体电路的图像显示装置
公开(公告)号：US20060001051A1
公开(公告)日：2006-01-05
申请号：US11171219
申请日：2005-07-01
申请人： Mitsuharu Tai , Mutsuko Hatano , Yoichi Takahara , Hiroki Takahashi , Akio Yazaki , Takeshi Noda
发明人： Mitsuharu Tai , Mutsuko Hatano , Yoichi Takahara , Hiroki Takahashi , Akio Yazaki , Takeshi Noda
IPC分类号： H01L29/745 , H01L21/335
CPC分类号： H01L29/78603 , H01L27/12 , H01L27/1285 , H01L27/3244 , H01L29/04 , H01L29/78675
摘要： Agglomeration of a polycrystalline silicon film is eliminated at the time of obtaining a high quality polycrystalline silicon film by forming a silicon layer on an insulating film substrate and conducting long-term melting and re-crystallization. For this purpose, a layer or a plurality of layers of an underlayer UCL are provided on an insulating substrate GLS, the area near the surface in contact with a precursory silicon film PCF provided on this underlayer UCL is formed as an insulating film UCLP showing a film composition to improve the wettability of the melted silicon layer, and thereafter a high quality polycrystalline silicon film PSI is formed through elimination of agglomeration by melting of the precursory silicon film PCF using a laser beam LSR.
摘要翻译：通过在绝缘膜基板上形成硅层并进行长期熔化和再结晶，在获得高质量的多晶硅膜时消除了多晶硅膜的聚集。为此，在绝缘基板GLS上设置一层或多层下层UCL，在与该底层UCL上设置的前体硅膜PCF接触的表面附近的区域形成为绝缘膜UCLP，膜组合物以提高熔融硅层的润湿性，然后通过使用激光束LSR熔化前体硅膜PCF消除聚集而形成高质量的多晶硅膜PSI。

7. 发明申请

US20050264802A1 Method and apparatus for inspecting defects and a system for inspecting defects 失效
标题翻译：用于检查缺陷的方法和装置以及检查缺陷的系统
公开(公告)号：US20050264802A1
公开(公告)日：2005-12-01
申请号：US11139594
申请日：2005-05-31
申请人： Yukihiro Shibata , Shunji Maeda , Takafumi Okabe , Yoichi Takahara
发明人： Yukihiro Shibata , Shunji Maeda , Takafumi Okabe , Yoichi Takahara
IPC分类号： G01N21/88 , G01N21/956 , H01L21/00 , H01L21/66
CPC分类号： H01L21/67253 , G01N21/95607 , G01N2021/4792 , H01L21/67028 , H01L21/67057
摘要： The present invention relates to a high-sensitivity defect inspection method, apparatus, and system adapted for the fine-structuring of patterns; wherein, in addition to a cleaning tank which chemically cleans a sample and rinses the sample, a defect inspection apparatus having a liquid-immersion element by which the interspace between the sample and the objective lens of an optical system is filled with a liquid, and a drying tank which dries the sample, the invention uses liquid-immersion transfer means from said cleaning tank through said liquid-immersion means of said defect inspection apparatus to said drying tank so that the sample is transferred in a liquid-immersed state from said cleaning tank to said liquid-immersion means.
摘要翻译：本发明涉及一种适用于精细构图的高灵敏度缺陷检查方法，装置和系统，其特征在于，除了对样品进行化学清洗并冲洗样品的清洗槽以外，还具有具有液体浸渍元件的缺陷检查装置，通过该液浸元件将样品与光学系统的物镜之间的间隙填充液体，干燥箱，干燥箱，将所述清洗槽的浸液转移装置通过所述缺陷检查装置的浸液装置使用于所述干燥箱，使样品以浸液状态从所述清洗罐到所说的液浸装置。

8. 发明申请

US20050202612A1 Thin film transistor and method of manufacturing the same 有权
标题翻译：薄膜晶体管及其制造方法
公开(公告)号：US20050202612A1
公开(公告)日：2005-09-15
申请号：US11123496
申请日：2005-05-04
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/205 , H01L21/20 , H01L21/336 , H01L29/786 , H01L21/00 , H01L21/84
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

9. 发明授权

US06903371B2 Thin film transistor and display using the same 有权
标题翻译：薄膜晶体管和显示器使用相同
公开(公告)号：US06903371B2
公开(公告)日：2005-06-07
申请号：US10773950
申请日：2004-02-06
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L21/205 , H01L21/20 , H01L21/336 , H01L29/786 , H01L29/04
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有高电子迁移率为200cm 2 / Vs以上。

10. 发明授权

US06657227B2 Transistor with thin film active region having clusters of different crystal orientation 有权
标题翻译：具有薄膜有源区的晶体管具有不同晶体取向的簇
公开(公告)号：US06657227B2
公开(公告)日：2003-12-02
申请号：US09910314
申请日：2001-07-19
申请人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
发明人： Takuo Tamura , Kiyoshi Ogata , Yoichi Takahara , Kazuhiko Horikoshi , Hironaru Yamaguchi , Makoto Ohkura , Hironobu Abe , Masakazu Saitou , Yoshinobu Kimura , Toshihiko Itoga
IPC分类号： H01L2904
CPC分类号： H01L29/66757 , H01L29/78675 , Y10S438/969
摘要： An amorphous silicon film is laser irradiated a plural number of times to make the film composed of a plurality of crystal grains while suppressing the formation of protrusions at the boundaries of the adjoining grains to realize a polycrystalline silicon thin film transistor having at least partly therein the clusters of grains, or the aggregates of at least two crystal grains, with preferred orientation in the plane (111), and having high electron mobility of 200 cm2/Vs or above.
摘要翻译：激光照射多次非晶硅膜以使由多个晶粒构成的膜同时抑制邻接晶粒的边界处的突起的形成，以实现多晶硅薄膜晶体管，其至少部分地在其中晶粒簇或至少两个晶粒的聚集体，在平面（111）中具有优选的取向，并且具有200cm 2 / Vs以上的高电子迁移率。

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