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    • 2. 发明授权
    • Light sensor having a contiguous IR suppression filter and a transparent substrate
    • 光传感器具有连续的IR抑制滤光器和透明基板
    • US08803068B2
    • 2014-08-12
    • US13337855
    • 2011-12-27
    • Nicole D. KernessArkadii V. SamoilovZhihai WangJoy T. Jones
    • Nicole D. KernessArkadii V. SamoilovZhihai WangJoy T. Jones
    • G01J3/50
    • H01L31/02327G01S17/58H01L27/1446H01L31/102H01L31/112H01L31/167H01L31/18
    • Techniques are described to furnish an IR suppression filter, or any other interference based filter, that is formed on a transparent substrate to a light sensor. In one or more implementations, a light sensor includes a substrate having a surface. One or more photodetectors are formed in the substrate. The photodetectors are configured to detect light and provide a signal in response thereto. An IR suppression filter configured to block infrared light from reaching the surface is formed on a transparent substrate. The light sensor may also include a plurality of color pass filters disposed over the surface. The color pass filters are configured to filter visible light to pass light in a limited spectrum of wavelengths to the one or more photodetectors. A buffer layer is disposed over the surface and configured to encapsulate the plurality of color pass filters and adhesion layer.
    • 描述了将技术描述为在光传感器的透明基板上形成的IR抑制滤波器或任何其它基于干涉的滤波器。 在一个或多个实施方式中,光传感器包括具有表面的基板。 在衬底中形成一个或多个光电检测器。 光电检测器被配置为检测光并响应于此提供信号。 构造成阻挡红外光到达表面的IR抑制滤光器形成在透明基板上。 光传感器还可以包括布置在表面上的多个彩色滤光片。 彩色通过滤光器被配置为过滤可见光以将有限的波长光中的光传递到一个或多个光电检测器。 缓冲层设置在表面上并且被配置为封装多个彩色通过滤光片和粘附层。
    • 4. 发明申请
    • Control Method, System, and Device for Circuit Domain Fallback
    • 电路域回退的控制方法,系统和设备
    • US20100302937A1
    • 2010-12-02
    • US12864504
    • 2009-01-07
    • Ying HuZhiming YuZaifeng ZongMinya YeZhihai Wang
    • Ying HuZhiming YuZaifeng ZongMinya YeZhihai Wang
    • H04J3/14
    • H04W76/18H04W8/12H04W36/0022
    • The present invention discloses a method, system, and apparatus for controlling Circuit Switched, CS, fallback. The method comprises: a network element which got calling information of the present call in CS domain notifying a Mobility Management Entity, MME, of the calling information; the MME notifying the called User Equipment, UE, of the calling information; the called UE determining whether the call performs CS fallback according to whether the user answers the call or according to pre-configured CS fallback policy. By applying the present invention, the CS fallback of ongoing call can be controlled by the called user which is in EPS network, therefore the usability of the user's EPS network service is ensured, the satisfaction degree of the user is improved, and the useless occupancy of the GSM/UMTS network resources is reduced.
    • 本发明公开了一种用于控制电路交换(CS)回退的方法,系统和装置。 该方法包括:在呼叫信息通知移动性管理实体MME的CS域中接收到本呼叫的呼叫信息的网元; MME通知被叫用户设备UE的呼叫信息; 被叫UE根据用户是否应答呼叫还是根据预配置的CS后备策略来确定呼叫是否执行CS回退。 通过应用本发明,正在进行的呼叫的CS回退可以由在EPS网络中的被叫用户进行控制,因此确保了用户的EPS网络服务的可用性,提高了用户的满意度,并且无用的占用 的GSM / UMTS网络资源减少。
    • 6. 发明授权
    • Method for forming barrier and seed layer
    • 形成屏障和种子层的方法
    • US06489231B1
    • 2002-12-03
    • US09907424
    • 2001-07-17
    • Kiran KumarZhihai WangWilbur G. Gatabay
    • Kiran KumarZhihai WangWilbur G. Gatabay
    • H01L214763
    • H01L21/76873H01L21/2652H01L21/28247H01L21/2855H01L21/3144H01L21/31662H01L21/3211H01L21/76843H01L21/76877H01L29/6659
    • A method for creating a highly reflective surface on an electroplated conduction layer. A barrier layer is deposited on a substrate using a self ionized plasma deposition process. The barrier layer has a thickness of no more than about one hundred angstroms. An adhesion layer is deposited on the barrier layer, using a self ionized plasma deposition process. A seed layer is deposited on the adhesion layer, also using a self ionized plasma deposition process, at a bias of no less than about one hundred and fifty watts. The combination of the barrier layer, adhesion layer, and seed layer is at times referred to herein as the barrier seed layer. The conduction layer is electroplated on the seed layer, thereby forming the highly reflective surface on the conduction layer, where the highly reflective surface has a reflectance of greater than about seventy percent.
    • 一种在电镀导电层上形成高反射面的方法。 使用自电离等离子体沉积工艺在衬底上沉积阻挡层。 阻挡层的厚度不大于约一百埃。 使用自电离等离子体沉积工艺在阻挡层上沉积粘附层。 种子层沉积在粘附层上,也使用自电离等离子体沉积工艺,偏压不小于约一百五十瓦。 阻挡层,粘合层和种子层的组合在本文中有时被称为阻挡种子层。 将导电层电镀在种子层上,由此在导电层上形成高反射表面,其中高反射表面的反射率大于约百分之七十。
    • 8. 发明授权
    • Method and composition for reducing gate oxide damage during RF sputter
clean
    • 用于在RF溅射清洗期间减少栅极氧化物损伤的方法和组合物
    • US5994211A
    • 1999-11-30
    • US976033
    • 1997-11-21
    • Zhihai WangWei-Jen HsiaWilbur Catabay
    • Zhihai WangWei-Jen HsiaWilbur Catabay
    • H01L21/02H01L21/3213H01L21/768H01L21/70
    • H01L21/02071H01L21/76814H01L21/76843H01L21/76844
    • Provided is a method and composition for RF sputter cleaning of contact and via holes which provides substantially uniform charge distribution in the holes and minimizes electron shadowing. This is accomplished by isotropically depositing, such as by PVD, a layer of conductive material at the wafer surface surrounding a hole and down the sides of the hole. Isotropic deposition is such that in high aspect ratio trenches and holes deposition is heaviest at the top and minimal at the bottom (due to the deposition shadowing effect). The deposited conductive material is preferably a metal that is also used as a liner in the holes prior to depositing the plug material. The conductive material provides path for negative charge otherwise accumulating at the top of a hole during RF sputter cleaning to reach the bottom of the hole and thereby prevents accumulations of charge of one polarity in and around the hole. Thus, the stress on the gate oxide caused by conventional RF sputtering, described above, is relieved.
    • 提供了用于RF溅射清洗接触孔和通孔的方法和组合物,其在孔中提供基本上均匀的电荷分布并使电子阴影最小化。 这通过诸如PVD的各向同性地沉积在围绕孔的晶片表面和孔的侧面的导电材料层来实现。 各向同性沉积使得在高纵横比下,沟槽和孔沉积在顶部最重,底部最小(由于沉积阴影效应)。 沉积的导电材料优选是在沉积插塞材料之前也用作孔中的衬垫的金属。 导电材料提供用于负电荷的路径,否则在RF溅射清洗期间积聚在孔的顶部以到达孔的底部,从而防止在孔内和周围累积一种极性的电荷。 因此,如上所述,通过常规RF溅射引起的栅极氧化物上的应力得以缓解。