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1. 发明授权

US06298018B1 Optical recording and reproducing method optical recording and reproducing device, and optical recording medium 失效
标题翻译：光学记录和再现方法光学记录和再现装置，以及光学记录介质
公开(公告)号：US06298018B1
公开(公告)日：2001-10-02
申请号：US09264416
申请日：1999-03-08
申请人： Akira Takahashi , Yoshiteru Murakami , Naoyasu Iketani , Ippei Suzuki , Go Mori , Shinya Hirata
发明人： Akira Takahashi , Yoshiteru Murakami , Naoyasu Iketani , Ippei Suzuki , Go Mori , Shinya Hirata
IPC分类号： G11B712
CPC分类号： B82Y10/00 , G11B7/122 , G11B7/1374 , G11B7/1387 , G11B7/24 , G11B11/10532 , G11B11/10554 , G11B11/1058 , G11B11/10584 , G11B2007/13727
摘要： An optical disk is provided with a recording layer, and with an optical coupling layer on a light-incident side of the recording layer. An optical recording and reproducing device and method include an objective lens and a hemispherical lens, which converge a light beam from a light source and project the light beam onto the optical disk. The hemispherical lens is provided in close proximity to the optical coupling layer, in a position such that an interval therebetween is not more than the wavelength of the light produced by the light source. The light beam converged by the objective lens and the hemispherical lens is coupled with the optical coupling layer while substantially maintaining a direction of propagation in which it was propagating while inside the hemispherical lens.
摘要翻译：光盘设有记录层，并在记录层的光入射侧具有光耦合层。光学记录和再现装置和方法包括物镜和半球形透镜，其将来自光源的光束会聚并将光束投射到光盘上。半球形透镜设置在光耦合层的附近，使得它们之间的间隔不大于由光源产生的光的波长。由物镜会聚的光束和半球透镜与光耦合层耦合，同时在半球形透镜的内部基本上保持传播方向传播。

2. 发明授权

US07772699B2 Semiconductor device and method of manufacturing the same 有权
标题翻译：半导体装置及其制造方法
公开(公告)号：US07772699B2
公开(公告)日：2010-08-10
申请号：US12035964
申请日：2008-02-22
申请人： Shinya Hirata
发明人： Shinya Hirata
IPC分类号： H01L23/48 , H01L21/44
CPC分类号： H01L23/3192 , H01L24/03 , H01L24/05 , H01L2224/02166 , H01L2224/0401 , H01L2224/05552 , H01L2224/05567 , H01L2224/05572 , H01L2224/114 , H01L2224/116 , H01L2224/16 , H01L2924/0002 , H01L2924/01004 , H01L2924/01006 , H01L2924/01014 , H01L2924/01015 , H01L2924/01029 , H01L2924/01033 , H01L2924/01078 , H01L2924/13091 , H01L2924/14 , H01L2924/00
摘要： A semiconductor device includes an electrode pad formed on a pad forming surface of a semiconductor integrated circuit chip, and a step formed on the pad forming surface to surround the electrode pad. A method of manufacturing the semiconductor device includes forming a metal film on a pad forming surface of a semiconductor integrated circuit chip, forming an electrode pad on a pad forming surface by selectively etching a metal film using a first mask pattern and forming a step to surround the electrode pad by selectively etching the pad forming surface using a second mask pattern.
摘要翻译：半导体器件包括形成在半导体集成电路芯片的焊盘形成表面上的电极焊盘和形成在焊盘形成表面上以围绕电极焊盘的台阶。一种制造半导体器件的方法包括：在半导体集成电路芯片的焊盘形成表面上形成金属膜，通过使用第一掩模图案选择性地蚀刻金属膜，在焊盘形成表面上形成电极焊盘，并形成包围所述电极焊盘通过使用第二掩模图案选择性地蚀刻所述焊盘形成表面。

3. 发明授权

US5508522A Method for producing a group II-VI compound semiconductor thin film and a group II-VI compound semiconductor device 失效
标题翻译： II-VI族化合物半导体薄膜和II-VI族化合物半导体器件的制造方法
公开(公告)号：US5508522A
公开(公告)日：1996-04-16
申请号：US169299
申请日：1993-12-17
申请人： Kenji Nakanishi , Masahiko Kitagawa , Yoshitaka Tomomura , Shinya Hirata
发明人： Kenji Nakanishi , Masahiko Kitagawa , Yoshitaka Tomomura , Shinya Hirata
IPC分类号： H01L21/363 , H01L33/04 , H01L33/14 , H01L33/16 , H01L33/28 , H01L33/30 , H01L33/34 , H01L33/40 , H01L33/62 , H01S5/00 , H01S5/32 , H01S5/327 , H01L29/06
CPC分类号： H01L33/28 , H01L21/02395 , H01L21/02406 , H01L21/02433 , H01L21/02557 , H01L21/0256 , H01L21/02576 , H01L21/02631 , H01L33/16 , H01S5/327 , H01S5/3202
摘要： A method for fabricating a semiconductor thin film is disclosed. The method includes the step of epitaxially growing a semiconductor layer made of a group II-VI compound semiconductor to have a thickness of at least one atomic layer or more, on a main plane of a single-crystal semiconductor substrate, the semiconductor substrate having one of a diamond structure and a zinc blende structure, the main plane being inclined by an angle in the range of 2 to 16 degrees with respect to a (100) plane.
摘要翻译：公开了半导体薄膜的制造方法。该方法包括在单晶半导体衬底的主平面上外延生长由II-VI族化合物半导体制成的半导体层以具有至少一个原子层以上的厚度的步骤，该半导体衬底具有一个的金刚石结构和闪锌矿结构，所述主平面相对于（100）面倾斜2至16度的范围内的角度。

4. 发明申请

US20060163720A1 Semiconductor device 审中-公开
标题翻译：半导体器件
公开(公告)号：US20060163720A1
公开(公告)日：2006-07-27
申请号：US11327326
申请日：2006-01-09
申请人： Shinya Hirata
发明人： Shinya Hirata
IPC分类号： H01L23/12
CPC分类号： H01L23/585 , H01L23/562 , H01L2924/0002 , H01L2924/00
摘要： A semiconductor device is provided with a sealing ring 106 made of a metal which surrounds an integrated circuit part 102 and which is formed on a substrate 104 along an outer perimeter of the rectangular device. At least one corner part 108 of the sealing ring is formed to have a larger width than other parts of the sealing ring 106, so as to increase the rigidity and the strength of the corner part of the sealing ring 106. Thus, the strength of the corner part of the sealing ring is improved. Also, even if the corner part of the sealing ring is lost, the penetration of moisture into the integrated circuit side is inhibited.
摘要翻译：半导体器件设置有由金属制成的密封环106，该密封环围绕集成电路部分102，并且沿着矩形器件的外周形成在基板104上。密封环的至少一个角部108形成为具有比密封环106的其它部分更大的宽度，以增加密封环106的角部的刚性和强度。因此，密封环的角部的强度提高。此外，即使密封圈的角部损失，也能够防止水分渗透到集成电路侧。

5. 发明授权

US5416884A Semiconductor waveguide structure of a II-VI group compound 失效
标题翻译： II-VI族化合物的半导体波导结构
公开(公告)号：US5416884A
公开(公告)日：1995-05-16
申请号：US245556
申请日：1994-05-18
申请人： Shinya Hirata , Masahiko Kitagawa , Yoshitaka Tomomura
发明人： Shinya Hirata , Masahiko Kitagawa , Yoshitaka Tomomura
IPC分类号： G02B6/10 , G02B6/13 , H01S5/327
CPC分类号： G02B6/10 , G02B6/131 , H01S5/327
摘要： A semiconductor waveguide structure of the II-VI group compound semiconductor made of the II group element and the VI group element. The waveguide structure includes a waveguide layer and clad layers which puts the waveguide layer therebetween. The waveguide layer has a refractive index larger than a refractive index of each clad layer. At least one of the clad layers contains the element Cd. With such an arrangement, the refractive index of one clad layer is established to be different from that of the other clad layer. In such a case, it is preferable that the semiconductor waveguide structure comprises at least two waveguide layers which are adjacent to each other and that the structure has either one of the features as follows: each refractive index of the waveguide layers varies stepwise at each boundary surface of the layers; the refractive index of at least one of the waveguide layers varies so as to be inclined; and super lattice layers are formed between the clad layer and the waveguide layers. Further, in the arrangement, more than two waveguide layers and clad layers may be formed in such a manner that each of the waveguide layer is put between the clad layers.
摘要翻译：由II族元素和VI族元素构成的II-VI族化合物半导体的半导体波导结构。波导结构包括波导层和将波导层置于其间的包覆层。波导层的折射率大于每个包覆层的折射率。包层中的至少一个包含元素Cd。通过这样的布置，确定了一个包覆层的折射率与另一个覆盖层的折射率不同。在这种情况下，优选半导体波导结构包括彼此相邻的至少两个波导层，并且该结构具有以下特征之一：波导层的每个折射率在每个边界处逐步变化层的表面; 至少一个波导层的折射率变化以倾斜; 并且在覆盖层和波导层之间形成超晶格层。此外，在该布置中，可以以使每个波导层放置在包层之间的方式形成多于两个的波导层和包层。

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