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1. 发明公开

KR20180018305A 가변 저항 소자 및 가변 용량 소자를 가진 능동 대역 통과 필터 회로 审中-公开
标题翻译：带有可调电阻器件和可调电容器件的有源带通滤波器电路
公开(公告)号：KR20180018305A
公开(公告)日：2018-02-21
申请号：KR20170078000
申请日：2017-06-20
申请人： BOEING CO
发明人： SOVERO EMILIO A , KANG JONGCHAN , AHMED MOHIUDDIN
IPC分类号： H03H11/12 , H03H7/12
CPC分类号： H03H11/1217 , H03H11/1252 , H03H11/1256 , H03H11/1291 , H03H2210/012 , H03H2210/025 , H03H2210/028
摘要： 예시적인예에서, 디바이스는능동대역통과필터회로(100)의연산증폭기(106, 136)를포함한다. 이디바이스는능동대역통과필터회로(100)와연관된중심주파수를조정하도록구성된가변저항소자(118, 122, 128, 130, 200, 404)를더 포함한다. 이디바이스는능동대역통과필터회로(100)와연관된중심주파수및 대역폭을조정하도록구성된가변용량소자(112, 114, 132, 138, 300)를더 포함한다.
摘要翻译：在说明性示例中，装置包括有源带通滤波器电路（100）的运算放大器（106,136）。该设备还包括被配置为调整与有源带通滤波器电路（100）相关联的中心频率的可调电阻设备（118,122,128,130,200,404）。该装置还包括可调电容装置（112,114,132,138,300），其被配置为调整与有源带通滤波器电路（100）相关联的中心频率和带宽。可调电阻器件可以具有并联的稳定电容器（406）。

2. 发明专利

JP2001085912A RF TRANSITION, RF CIRCUIT, AND METHOD FOR COUPLING ENERGY PROPAGATED THROUGH WAVEGUIDE TRANSMISSION LINE WITH ENERGY PROPAGATED THROUGH MICROSTRIP TRANSMISSION LINE 失效
公开(公告)号：JP2001085912A
公开(公告)日：2001-03-30
申请号：JP2000246376
申请日：2000-08-15
申请人： BOEING CO
发明人： HACKER JONATHAN BRUCE , SOVERO EMILIO A
IPC分类号： H01L23/12 , H01L23/14 , H01P5/107
摘要： PROBLEM TO BE SOLVED: To obtain an RF transition to couple energy propagated through a waveguide transmission line with energy propagated through a monolithic microwave integrated circuit(MMIC). SOLUTION: This RF transition 20 includes an MMIC board 26 whose rear side has a metallization layer and whose front side has a microstrip 28. The rear side metallization layer specifies an aperture 32 and the microstrip 28 includes a microstrip feed 30 formed close to the aperture 32. Furthermore, the RF transition 20 includes a waveguide 34 that is terminated at the metallization layer around the aperture 32 thereby converting the energy propagated through the waveguide 34 into the energy propagated through the microstrip 28. According to this method, even when a fragile and thin board and smaller device components of a high frequency device are provided, the transition of the energy from the waveguide to the MMIC can be built up at an RF frequency higher than a millimeter wave frequency.

3. 发明专利

CA2312128A1 MMIC-TO-WAVEGUIDE RF TRANSITION AND ASSOCIATED METHOD 未知
公开(公告)号：CA2312128A1
公开(公告)日：2001-02-16
申请号：CA2312128
申请日：2000-06-22
申请人： BOEING CO
发明人： SOVERO EMILIO A , HACKER JONATHAN BRUCE
IPC分类号： H01L23/12 , H01L23/14 , H01P5/107
摘要： An RF transition for coupling energy propagating in a waveguide transmission line into energy propagating in a monolithic microwave integrat ed circuit ("MMIC") is provided. The RF transition comprises a microstrip structure that includes a MMIC substrate with backside metallization and a front side microstrip. The backside metallization defines an iris, and the microstrip includes a microstrip feed formed proximate the iris. The RF transition also includes a waveguide terminating at the metallization layer around the iris to thereby convert energy propagating in the waveguide into energy propagating in the microstri p. In one embodiment, RF signal processing circuitry is monolithically formed on t he MMIC substrate. The invention enables a waveguide-to-MMIC transition to be constructed at higher RF frequencies, such as millimeter wave frequencies, even with the fragile, thinner substrates and smaller device features of higher- frequency devices. The monolithic structure avoids the use of wire bonds or ribbon wel ds to interconnect separate substrates, such as would be used in an MIC implementation, enabling improved RF performance at higher RF frequencies. The invention enables an RF circuit to be constructed that is adapted to communicate signa ls with a waveguide at higher RF frequencies, such as millimeter wave frequencies, i n a rugged, producible package.

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