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    • 5. 发明授权
    • Voltage transformer type water heating unit
    • 电压互感器型热水器
    • US06353213B1
    • 2002-03-05
    • US09571651
    • 2000-05-15
    • Blair MillerThomas J. Mayer
    • Blair MillerThomas J. Mayer
    • H05B610
    • H05B6/108A47J31/542H05B6/12Y10S99/14
    • A water heating unit uses a voltage transformer type heating unit to heat water. The water flows from a water reservoir to a wound transformer where the water passes through metal tubing that is also the secondary winding of the transformer. The secondary winding is shorted and an erect-magnetic field induces a current in the transformer generating heat that heats the water flowing through the metal tubing. The turns of the primary winding of the heating unit can be separated with spacer material and a cooling fan can be included adjacent to the heating unit for forcing air in between the turns of the primary winding to remove excess heat.
    • 水加热单元使用变压器型加热单元来加热水。 水从储水器流入伤口变压器,水通过也是变压器次级绕组的金属管。 次级绕组短路,直立磁场在变压器中产生电流,产生热量,加热流过金属管的水。 加热单元的初级绕组的匝可以用间隔材料分离,并且可以在加热单元附近包括冷却风扇,以迫使初级绕组的匝之间的空气去除多余的热量。
    • 6. 发明授权
    • Simplified high Q inductor substrate
    • 简化的高Q电感基板
    • US06225182B1
    • 2001-05-01
    • US09386132
    • 1999-08-30
    • Jerome Tsu-Rong ChuJohn D. LaBarreWen LinBlair Miller
    • Jerome Tsu-Rong ChuJohn D. LaBarreWen LinBlair Miller
    • H01L21331
    • H01L28/10H01L23/522H01L23/5227H01L27/08H01L2924/0002H01L2924/00
    • The present invention provides for a method of manufacturing a simplified high Q inductor substrate and a semiconductor device having that substrate. The method for manufacturing the simplified high Q inductor substrate preferably comprises forming a base substrate over a semiconductor wafer, wherein the base substrate has a given dopant concentration and then forming an epitaxial (EPI) layer over the base substrate. The EPI layer includes epitaxially forming a first doped region in the EPI layer over the base substrate and then epitaxially forming a second doped region in the EPI layer over the first doped region. The first doped region has a dopant concentration greater than the given dopant concentration of the base substrate, and the second doped region has a dopant concentration less than the first doped region.
    • 本发明提供一种制造简化的高Q电感器基板的方法和具有该基板的半导体器件。 制造简化的高Q电感器衬底的方法优选地包括在半导体晶片上形成基底衬底,其中基底衬底具有给定的掺杂剂浓度,然后在基底衬底上形成外延(EPI)层。 EPI层包括在基底衬底上的外延形成EPI层中的第一掺杂区域,然后在第一掺杂区域上在EPI层中外延形成第二掺杂区域。 第一掺杂区域具有大于基底衬底的给定掺杂剂浓度的掺杂剂浓度,并且第二掺杂区域具有小于第一掺杂区域的掺杂剂浓度。