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    • 7. 发明申请
    • BRIGHT VISIBLE WAVELENGTH LUMINESCENT NANOSTRUCTURES AND METHODS OF MAKING AND DEVICES FOR USING THE SAME
    • 光亮可见光波长发光纳米结构及其制造方法及其使用方法
    • US20100044697A2
    • 2010-02-25
    • US11918442
    • 2006-04-13
    • Jie LIUJianye LIHenry EVERITTHongying PENGJohn FOREMAN
    • Jie LIUJianye LIHenry EVERITTHongying PENGJohn FOREMAN
    • H01L33/00C09K11/54C09K11/56
    • C01G9/02B82Y30/00C01P2002/52C01P2002/72C01P2004/16C09K11/54C09K11/565H01B1/08H01B1/10H01L33/18
    • Luminescent nanostructures (e.g., nanowires) and devices are provided which are capable of emitting bright visible light. The luminescent nanowires are most preferably in the form of a doped ZnO having a spectrally integrated ratio of visible to UV light of at least about 1000 or greater. The dopant for the ZnO luminescent nanowires may be at least one of sulfur, selenium, oxygen, zinc, magnesium, aluminum, with sulfur being especially preferred. The doped ZnO luminescent nanowires may be provided in devices for emitting visible light whereby visible light is emitted by the doped ZnO luminescent nanowires in response to excitation by UV light provided by a UV light source. The device may preferably comprise a transparent or translucent lens covering the UV light source, wherein the doped ZnO luminescent nanowires are present as a coating on a surface of the lens. In some embodiments, the device will comprise multiple UV light sources. Devices of the present invention may be provided with a flat panel lens which is positioned adjacent the multiple UV light sources and has a coating of the doped ZnO luminescent nanowires thereon.
    • 提供发光纳米结构(例如,纳米线)和能够发出明亮可见光的器件。 发光纳米线最优选为具有至少约1000或更大的可见光与紫外光的光谱积分比的掺杂ZnO的形式。 用于ZnO发光纳米线的掺杂剂可以是硫,硒,氧,锌,镁,铝中的至少一种,特别优选硫。 掺杂的ZnO发光纳米线可以设置在用于发射可见光的装置中,由此可见光由掺杂的ZnO发光纳米线发射,以响应由UV光源提供的UV光的激发。 该装置可以优选地包括覆盖UV光源的透明或半透明透镜,其中掺杂的ZnO发光纳米线作为透镜表面上的涂层存在。 在一些实施例中,该装置将包括多个UV光源。 本发明的装置可以设置有与多个UV光源相邻并且在其上具有掺杂的ZnO发光纳米线的涂层的平板透镜。
    • 8. 发明申请
    • LEAD FRAME AND A METHOD OF MANUFACTURING THEREOF
    • 引导框架及其制造方法
    • US20140203418A1
    • 2014-07-24
    • US14158321
    • 2014-01-17
    • Dawei XINGJie LIUHong Wei GUANYue Gen YUSeow Kiang KHOO
    • Dawei XINGJie LIUHong Wei GUANYue Gen YUSeow Kiang KHOO
    • H01L21/48H01L23/495
    • H01L21/4828H01L21/561H01L23/3121H01L23/49548H01L23/49582H01L23/49861H01L24/97H01L2224/32245H01L2224/48091H01L2224/48247H01L2224/73265H01L2224/97H01L2924/181H01L2924/00014H01L2924/00H01L2224/85H01L2224/83H01L2924/00012
    • A method of manufacturing a lead frame, comprising the steps of: providing an electrically-conductive base material having first and second planar sides; forming a patterned conductive layer on the first planar side of the base material; etching the second planar side of the base material at portions with respect to exposed portions on the first planar side of the base material comprising the patterned conductive layer, to form partially-etched portions on the second planar side of the base material; providing a non-conductive filling material over the second planar side of the base material, wherein the filling material fills spaces inside the partially-etched portions on the second planar side of the base material to form adjacent portions of the filling material and a plurality of conductive portions on the second planar side of the base material; and etching the exposed portions of the first planar side of the base material comprising the patterned conductive layer to form partially-etched portions on the first planar side of the base material that combine with the partially-etched portions on the second planar side of the base material to thereby form a plurality of separate conductive regions on the first planar side of the base material, each conductive region being electrically conductive with at least a respective one of the plurality of conductive portions on the second planar side of the base material.
    • 一种制造引线框架的方法,包括以下步骤:提供具有第一和第二平面侧面的导电基材; 在基材的第一平面侧上形成图案化的导电层; 在相对于包括图案化导电层的基材的第一平面侧上的暴露部分的部分处蚀刻基材的第二平面侧,以在基材的第二平面侧上形成部分蚀刻部分; 在所述基材的所述第二平面侧上设置不导电的填充材料,其中所述填充材料填充所述基材的所述第二平面侧上的部分蚀刻部分内的空间,以形成所述填充材料的相邻部分, 在基材的第二平面侧的导电部分; 并且蚀刻包括图案化导电层的基材的第一平面侧的暴露部分,以在基材的第一平面侧上形成部分蚀刻部分,其与基底的第二平面侧上的部分蚀刻部分组合 从而在基材的第一平面侧上形成多个单独的导电区域,每个导电区域与基材的第二平面侧上的多个导电部分中的至少一个导电部分导电。