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    • 7. 发明申请
    • Structure and method for manufacturing device with planar halo profile
    • 具有平面光晕轮廓的制造装置的结构和方法
    • US20090152646A1
    • 2009-06-18
    • US11955515
    • 2007-12-13
    • HUILONG ZHUJING WANG
    • HUILONG ZHUJING WANG
    • H01L29/94H01L21/425
    • H01L29/66553H01L21/26586H01L29/665H01L29/66583H01L29/7833
    • A semiconductor device and method for manufacturing the device with a planar halo profile is provided. The semiconductor device can be a MOSFET. The method of forming the structure includes forming an angled spacer adjacent a gate structure and implanting a halo implant at an angle to form a halo profile having low dopant concentration near a gate dielectric under the gate structure. The structure includes an underlying wafer or substrate and an angled gate spacer having an upper portion and an angled lower portion. The upper portion is structured to prevent halo dopants from penetrating an inversion layer of the structure. The structure further includes a low concentration halo dopant within a channel of a gate structure.
    • 提供了一种用于制造具有平面晕轮廓的器件的半导体器件和方法。 半导体器件可以是MOSFET。 形成结构的方法包括在栅极结构附近形成一个倾斜的间隔物,并以一定的角度注入一个晕轮注入,以形成栅极结构附近的栅极电介质附近具有低掺杂浓度的晕轮廓。 该结构包括下面的晶片或衬底以及具有上部和成角度的下部的成角度的栅极间隔件。 上部构造成防止晕轮掺杂物穿透该结构的反转层。 该结构还包括在栅极结构的沟道内的低浓度卤素掺杂剂。