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1. 发明授权

US08736812B2 Projection-type photolithography system using composite photon sieve 有权
标题翻译：投影型光刻系统采用复合光子筛
公开(公告)号：US08736812B2
公开(公告)日：2014-05-27
申请号：US13375102
申请日：2011-08-16
申请人： Changqing Xie , Nan Gao , Yilei Hua , Xiaoli Zhu , Hailiang Li , Lina Shi , Dongmei Li , Ming Liu
发明人： Changqing Xie , Nan Gao , Yilei Hua , Xiaoli Zhu , Hailiang Li , Lina Shi , Dongmei Li , Ming Liu
IPC分类号： G03B27/42
CPC分类号： G02B5/1876 , G03F7/70316 , G03F7/70325
摘要： The present disclosure relates to the field of micro-nano fabrication, and provides a projection-type photolithography system using a composite photon sieve. The system comprises: a lighting system, a mask plate, a composite photon sieve and a substrate, which are arranged in order. The lighting system is adapted to generate incident light and irradiate the mask plate with the incident light. The mask plate is adapted to provide an object to be imaged by the composite photon sieve, and the incident light reaches the composite photon sieve after passing through the mask plate. The composite photon sieve is adapted to perform imaging, by which a pattern on the mask plate is imaged on the substrate. The substrate is adapted to receive an image of the pattern on the mask plate imaged by the composite photon sieve. According to the present disclosure, because the composite photon sieve is used instead of a projection objective lens in a conventional projection-type photolithography system, the advantage of high efficiency in the conventional projection-type photolithography system can be reserved, and also photolithography can be performed in batches rapidly, so that photolithography efficiency can be improved. Meanwhile, costs can be effectively cut down and the system can be reduced in size.
摘要翻译：本公开涉及微纳米制造领域，并且提供了使用复合光子筛的投影型光刻系统。该系统包括：依次布置的照明系统，面板，复合光子筛和基板。照明系统适于产生入射光并用入射光照射掩模板。掩模板适于通过复合光子筛提供要成像的物体，并且入射光通过掩模板后到达复合光子筛。复合光子筛适于进行成像，掩模板上的图案在基底上成像。衬底适于接收由复合光子筛成像的掩模板上的图案的图像。根据本公开，由于在常规投影型光刻系统中使用复合光子筛代替投影物镜，因此可以预留在常规投影型光刻系统中高效率的优点，并且光刻可以批量快速进行，从而可以提高光刻效率。同时，可以有效降低成本，缩小系统。

2. 发明申请

US20130044299A1 PROJECTION-TYPE PHOTOLITHOGRAPHY SYSTEM USING COMPOSITE PHOTON SIEVE 有权
标题翻译：使用复合光子栅的投影型光刻机系统
公开(公告)号：US20130044299A1
公开(公告)日：2013-02-21
申请号：US13375102
申请日：2011-08-16
申请人： Changqing Xie , Nan Gao , Yilei Hua , Xiaoli Zhu , Hailiang Li , Lina Shi , Dongmei Li , Ming Liu
发明人： Changqing Xie , Nan Gao , Yilei Hua , Xiaoli Zhu , Hailiang Li , Lina Shi , Dongmei Li , Ming Liu
IPC分类号： G03B27/32
CPC分类号： G02B5/1876 , G03F7/70316 , G03F7/70325
摘要： The present disclosure relates to the field of micro-nano fabrication, and provides a projection-type photolithography system using a composite photon sieve. The system comprises: a lighting system, a mask plate, a composite photon sieve and a substrate, which are arranged in order. The lighting system is adapted to generate incident light and irradiate the mask plate with the incident light. The mask plate is adapted to provide an object to be imaged by the composite photon sieve, and the incident light reaches the composite photon sieve after passing through the mask plate. The composite photon sieve is adapted to perform imaging, by which a pattern on the mask plate is imaged on the substrate. The substrate is adapted to receive an image of the pattern on the mask plate imaged by the composite photon sieve. According to the present disclosure, because the composite photon sieve is used instead of a projection objective lens in a conventional projection-type photolithography system, the advantage of high efficiency in the conventional projection-type photolithography system can be reserved, and also photolithography can be performed in batches rapidly, so that photolithography efficiency can be improved. Meanwhile, costs can be effectively cut down and the system can be reduced in size.
摘要翻译：本公开涉及微纳米制造领域，并且提供了使用复合光子筛的投影型光刻系统。该系统包括：依次布置的照明系统，面板，复合光子筛和基板。照明系统适于产生入射光并用入射光照射掩模板。掩模板适于通过复合光子筛提供要成像的物体，并且入射光通过掩模板后到达复合光子筛。复合光子筛适于进行成像，掩模板上的图案在基底上成像。衬底适于接收由复合光子筛成像的掩模板上的图案的图像。根据本公开，由于在常规投影型光刻系统中使用复合光子筛代替投影物镜，因此可以预留在常规投影型光刻系统中高效率的优点，并且光刻可以批量快速进行，从而可以提高光刻效率。同时，可以有效降低成本，缩小系统。

3. 发明申请

US20150104094A1 DEFECT DETECTION SYSTEM FOR EXTREME ULTRAVIOLET LITHOGRAPHY MASK 有权
标题翻译：超极紫外线掩模缺陷检测系统
公开(公告)号：US20150104094A1
公开(公告)日：2015-04-16
申请号：US14391682
申请日：2012-04-16
申请人： Hailiang Li , Changqing Xie , Ming Liu , Dongmei Li , Jiebin Niu , Lina Shi , Xiaoli Zhu
发明人： Hailiang Li , Changqing Xie , Ming Liu , Dongmei Li , Jiebin Niu , Lina Shi , Xiaoli Zhu
IPC分类号： G01N21/88 , G01N21/47 , G06T7/00 , G01N21/95
CPC分类号： G01N21/8851 , G01N21/47 , G01N21/8806 , G01N21/95 , G01N2021/8822 , G01N2021/95676 , G01N2201/12 , G02B21/16 , G02B27/4222 , G02B2207/125 , G03F1/84 , G06T7/0004
摘要： A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (1), extreme ultraviolet light transmission parts (2, 3), an extreme ultraviolet lithography mask (4), a photon sieve (6) and a collection (7) and analysis (8) system. Point light source beams emitted by the extreme ultraviolet light source (1) are focused on the extreme ultraviolet lithography mask (4) through the extreme ultraviolet light transmission parts (2, 3); the extreme ultraviolet lithography mask (4) emits scattered light and illuminates the photon sieve (6); and the photon sieve (6) forms a dark field image and transmits the same to the collection (7) and analysis (8) system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution.
摘要翻译：用于极紫外光刻掩模的缺陷检测系统包括极紫外光源（1），极紫外光透射部分（2,3），极紫外光刻掩模（4），光子筛（6）和集合 7）和分析（8）系统。由极紫外光源（1）发射的点光源光束通过极紫外光透射部分（2,3）聚焦在极紫外光刻掩模（4）上; 极紫外光刻掩模（4）发射散射光并照射光子筛（6）; 并且光子筛（6）形成暗场图像并将其传输到集合（7）和分析（8）系统。用于极紫外光刻掩模的缺陷检测系统使用光子筛替代施瓦茨目标，从而实现更低的成本，更小的尺寸和更高的分辨率。

4. 发明授权

US09546964B2 Defect detection system for extreme ultraviolet lithography mask 有权
标题翻译：用于极紫外光刻掩模的缺陷检测系统
公开(公告)号：US09546964B2
公开(公告)日：2017-01-17
申请号：US14391682
申请日：2012-04-16
申请人： Hailiang Li , Changqing Xie , Ming Liu , Dongmei Li , Jiebin Niu , Lina Shi , Xiaoli Zhu
发明人： Hailiang Li , Changqing Xie , Ming Liu , Dongmei Li , Jiebin Niu , Lina Shi , Xiaoli Zhu
IPC分类号： G06K9/00 , G01N21/88 , G03F1/84 , G02B21/16 , G02B27/42 , G01N21/47 , G01N21/95 , G06T7/00 , G01N21/956
CPC分类号： G01N21/8851 , G01N21/47 , G01N21/8806 , G01N21/95 , G01N2021/8822 , G01N2021/95676 , G01N2201/12 , G02B21/16 , G02B27/4222 , G02B2207/125 , G03F1/84 , G06T7/0004
摘要： A defect detection system for an extreme ultraviolet lithography mask comprises an extreme ultraviolet light source (1), extreme ultraviolet light transmission parts (2, 3), an extreme ultraviolet lithography mask (4), a photon sieve (6) and a collection (7) and analysis (8) system. Point light source beams emitted by the extreme ultraviolet light source (1) are focused on the extreme ultraviolet lithography mask (4) through the extreme ultraviolet light transmission parts (2, 3); the extreme ultraviolet lithography mask (4) emits scattered light and illuminates the photon sieve (6); and the photon sieve (6) forms a dark field image and transmits the same to the collection (7) and analysis (8) system. The defect detection system for the extreme ultraviolet photolithographic mask uses the photon sieve to replace a Schwarzchild objective, thereby realizing lower cost, relatively small size and high resolution.
摘要翻译：用于极紫外光刻掩模的缺陷检测系统包括极紫外光源（1），极紫外光透射部分（2,3），极紫外光刻掩模（4），光子筛（6）和集合 7）和分析（8）系统。由极紫外光源（1）发射的点光源光束通过极紫外光透射部分（2,3）聚焦在极紫外光刻掩模（4）上; 极紫外光刻掩模（4）发射散射光并照射光子筛（6）; 并且光子筛（6）形成暗场图像并将其传输到集合（7）和分析（8）系统。用于极紫外光刻掩模的缺陷检测系统使用光子筛替代施瓦茨目标，从而实现更低的成本，更小的尺寸和更高的分辨率。

5. 发明申请

US20120140543A1 One Time Programming Memory and Method of Storage and Manufacture of the Same 有权
标题翻译：一次性编程存储器及其存储和制造方法
公开(公告)号：US20120140543A1
公开(公告)日：2012-06-07
申请号：US13223165
申请日：2011-08-31
申请人： Ming Liu , Qingyun Zuo , Shibing Long , Changqing Xie , Zongliang Huo
发明人： Ming Liu , Qingyun Zuo , Shibing Long , Changqing Xie , Zongliang Huo
IPC分类号： G11C17/06 , H01L21/8246
CPC分类号： H01L29/872 , G11C17/06 , H01L27/1021 , H01L29/861
摘要： The present invention relates to a one time programming memory and method of storage and manufacture of the same. It belongs to microelectronic memory technology and manufacture field. The one time programming memory comprises a diode (10) having a unidirectional conducting rectification characteristic and a variable-resistance memory (20) having a bipolar conversion characteristic. The diode (10) having the unidirectional conducting rectification characteristic and the variable-resistance memory (20) having the bipolar conversion characteristic are connected in series. The one time programming memory device of the present invention takes the bipolar variable-resistance memory (20) as a storage unit, programming the bipolar variable-resistance memory (20) into different resistance states so as to carry out multilevel storage, and takes the unidirectional conducting rectification diode (10) as a gating unit. The rectification characteristic of unidirectional conducting rectification diode (10) can not only enable the bipolar variable-resistance storage (20) to be programmed only once but also inhibit crosstalk in a cross-array structure. The one time programming memory of the present invention is suitable to integration of the cross-array structure. It has the advantages like a simple structure, easy integration and high density. It can achieve multilevel storage and reduce the cost, which contribute to widely spreading and application of the present invention.
摘要翻译：本发明涉及一次性编程存储器及其存储和制造方法。属于微电子存储技术和制造领域。一次性编程存储器包括具有单向导通整流特性的二极管（10）和具有双极转换特性的可变电阻存储器（20）。具有单向导通整流特性的二极管（10）和具有双极转换特性的可变电阻存储器（20）串联连接。本发明的一次性编程存储装置将双极可变电阻存储器（20）作为存储单元，将双极可变电阻存储器（20）编程成不同的电阻状态，以进行多级存储，并且单向导通整流二极管（10）作为选通单元。单向导通整流二极管（10）的整流特性不仅可以使双极可变电阻存储器（20）只编程一次，而且可以抑制交叉阵列结构中的串扰。本发明的一次性编程存储器适合于集成交叉阵列结构。具有结构简单，易于集成，密度高等优点。它可以实现多级存储并降低成本，这有助于本发明的广泛推广和应用。

6. 发明授权

US08531861B2 One time programming memory and method of storage and manufacture of the same 有权
标题翻译：一次编程存储器及其存储和制造方法
公开(公告)号：US08531861B2
公开(公告)日：2013-09-10
申请号：US13223165
申请日：2011-08-31
申请人： Ming Liu , Qingyun Zuo , Shibing Long , Changqing Xie , Zongliang Huo
发明人： Ming Liu , Qingyun Zuo , Shibing Long , Changqing Xie , Zongliang Huo
IPC分类号： G11C17/00
CPC分类号： H01L29/872 , G11C17/06 , H01L27/1021 , H01L29/861
摘要： One time programming memory and methods of storage and manufacture of the same are provided. Examples relate to microelectronic memory technology and manufacture. The one time programming memory includes a diode (10) having a unidirectional conducting rectification characteristic and a variable-resistance memory (20) having a bipolar conversion characteristic. The diode (10) having the unidirectional conducting rectification characteristic and the variable-resistance memory (20) having the bipolar conversion characteristic are connected in series. The one time programming memory device of this example takes the bipolar variable-resistance memory (20) as a storage unit, programming the bipolar variable-resistance memory (20) into different resistance states so as to carry out multilevel storage, and takes the unidirectional conducting rectification diode (10) as a gating unit. The rectification characteristic of unidirectional conducting rectification diode (10) can not only enable the bipolar variable-resistance storage (20) to be programmed only once but also inhibit crosstalk in a cross-array structure.
摘要翻译：提供了一次编程存储器及其存储和制造方法。实例涉及微电子存储器技术和制造。一次编程存储器包括具有单向导通整流特性的二极管（10）和具有双极转换特性的可变电阻存储器（20）。具有单向导通整流特性的二极管（10）和具有双极转换特性的可变电阻存储器（20）串联连接。该实施例的一次性编程存储器件将双极可变电阻存储器（20）作为存储单元，将双极可变电阻存储器（20）编程成不同的电阻状态，以执行多级存储，并且采用单向导通整流二极管（10）作为选通单元。单向导通整流二极管（10）的整流特性不仅可以使双极可变电阻存储器（20）只编程一次，而且可以抑制交叉阵列结构中的串扰。

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