会员体验
专利管家(专利管理)
工作空间(专利管理)
风险监控(情报监控)
数据分析(专利分析)
侵权分析(诉讼无效)
联系我们
交流群
官方交流:
QQ群: 891211   
微信请扫码    >>>
现在联系顾问~
热词
    • 1. 发明申请
    • PHOTODIODE MODULE AND APPARATUS INCLUDING MULTIPLE PHOTODIODE MODULES
    • 光电模块和包含多个光电模块的装置
    • US20110215231A1
    • 2011-09-08
    • US13108733
    • 2011-05-16
    • David A. FattalJason BlackstockDuncan Stewart
    • David A. FattalJason BlackstockDuncan Stewart
    • G01J1/04
    • H04N1/053H04N2201/04787H04N2201/04793H04N2201/04794
    • Various embodiments of the present invention are directed to a photodiode module including a structure configured to selectively couple light to a dielectric-surface mode of a photonic crystal of the photodiode module. In one embodiment of the present invention, a photodiode module includes a semiconductor structure having a p-region and an n-region. The photodiode module further includes a photonic crystal having a surface positioned adjacent to the semiconductor structure. A diffraction grating of the photodiode module may be positioned and configured to selectively couple light incident on the diffraction grating to a dielectric-surface mode associated with the surface of the photonic crystal. In another embodiment of the present invention, a photodiode apparatus includes multiple, stacked photodiode modules, each of which is configured to selectively absorb light at a selected wavelength or range of wavelengths.
    • 本发明的各种实施例涉及一种光电二极管模块,其包括被配置为选择性地将光耦合到光电二极管模块的光子晶体的电介质表面模式的结构。 在本发明的一个实施例中,光电二极管模块包括具有p区和n区的半导体结构。 光电二极管模块还包括具有邻近半导体结构定位的表面的光子晶体。 可以将光电二极管模块的衍射光栅定位和配置为将入射在衍射光栅上的光选择性地耦合到与光子晶体的表面相关联的电介质表面模式。 在本发明的另一实施例中,光电二极管装置包括多个堆叠的光电二极管模块,每个光电二极管模块被配置为选择性地吸收所选择的波长或波长范围的光。
    • 7. 发明申请
    • Microresonantor systems and methods of fabricating the same
    • 微谐振器系统及其制造方法
    • US20090034905A1
    • 2009-02-05
    • US11888015
    • 2007-07-30
    • Michael Renne Ty TanShih-Yuan WangDuncan StewartDavid A. Fattal
    • Michael Renne Ty TanShih-Yuan WangDuncan StewartDavid A. Fattal
    • G02B6/12
    • H01S5/1075B82Y20/00G02B6/12007H01S5/026H01S5/0424H01S5/1032H01S5/1042H01S5/34306
    • Various embodiments of the present invention are related to microresonator systems and to methods of fabricating the microresonator systems. In one embodiment, a microresonator system comprises a substrate having a top surface layer and at least one waveguide embedded in the substrate and positioned adjacent to the top surface layer of the substrate. The microresonator system also includes a microresonator having a top layer, an intermediate layer, a bottom layer, a peripheral region, and a peripheral coating. The bottom layer of the microresonator is attached to and in electrical communication with the top surface layer of the substrate. The microresonator is positioned so that at least a portion of the peripheral region is located above the at least one waveguide. The peripheral coating covers at least a portion of the peripheral surface and has a relatively lower index of refraction than the top, intermediate, and bottom layers of the microresonator.
    • 本发明的各种实施例涉及微谐振器系统和制造微谐振器系统的方法。 在一个实施例中,微谐振器系统包括具有顶表面层和嵌入在衬底中的至少一个波导并且邻近衬底的顶表面层定位的衬底的衬底。 微谐振器系统还包括具有顶层,中间层,底层,周边区域和外围涂层的微谐振器。 微谐振器的底层附着到衬底的顶表面层并与其电连通。 定位微谐振器使得周边区域的至少一部分位于至少一个波导的上方。 周边涂层覆盖周边表面的至少一部分,并且具有比微谐振器的顶层,中间层和底层更低的折射率。
    • 9. 发明申请
    • Light-Emitting Devices
    • 发光装置
    • US20110180782A1
    • 2011-07-28
    • US13002897
    • 2008-07-25
    • David A. FattalDuncan Stewart
    • David A. FattalDuncan Stewart
    • H01L33/06B82Y99/00
    • H01L33/06H01L33/08
    • Various embodiments of the present invention are directed to semiconductor light-emitting devices that provide energy efficient, high-speed modulation rates in excess of 10 Gbits/sec. These devices include a light-emitting layer embedded between two relatively thicker semiconductor layers. The energy efficient, high-speed modulation rates result from the layers adjacent to the light-emitting layer being composed of semiconductor materials with electronic states that facilitate injection of carriers into the light-emitting layer for light emission when an appropriate light-emitting voltage is applied and facilitate the removal of carriers when an appropriate light-quenching voltage is applied.
    • 本发明的各种实施例涉及提供超过10G比特/秒的节能高速调制速率的半导体发光器件。 这些器件包括嵌入两个较厚的半导体层之间的发光层。 能量效率高的调制速率是由与发光层相邻的层组成的,这些半导体材料由具有电子状态的半导体材料构成,当电流为适当的发光电压时,有助于将载流子注入发光层进行发光 当施加适当的光熄灭电压时,施加并促进载体的移除。