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1. 外观设计

USD596373S1 Automated teller machine 有权
公开(公告)号：USD596373S1
公开(公告)日：2009-07-14
申请号：US29299631
申请日：2007-12-31
申请人： Dong Gu Kang , Jong Ok Lee
设计人： Dong Gu Kang , Jong Ok Lee

2. 外观设计

USD592825S1 Automated teller machine 有权
公开(公告)号：USD592825S1
公开(公告)日：2009-05-19
申请号：US29250398
申请日：2006-11-13
申请人： Dong Gu Kang , Jong Ok Lee
设计人： Dong Gu Kang , Jong Ok Lee

3. 外观设计

USD615274S1 Automated teller machine 有权
公开(公告)号：USD615274S1
公开(公告)日：2010-05-04
申请号：US29331284
申请日：2009-01-22
申请人： Youn Jong Kim , Dong Gu Kang , Jong Ok Lee
设计人： Youn Jong Kim , Dong Gu Kang , Jong Ok Lee

4. 外观设计

USD596374S1 Automated teller machine 有权
公开(公告)号：USD596374S1
公开(公告)日：2009-07-14
申请号：US29299636
申请日：2007-12-31
申请人： Dong Gu Kang , Jong Ok Lee
设计人： Dong Gu Kang , Jong Ok Lee

5. 外观设计

USD582125S1 Automated teller machine 有权
标题翻译：自动取款机
公开(公告)号：USD582125S1
公开(公告)日：2008-12-02
申请号：US29250397
申请日：2006-11-13
申请人： Dong Gu Kang , Jong Ok Lee
设计人： Dong Gu Kang , Jong Ok Lee

6. 发明申请

US20090003057A1 NON-VOLATILE MEMORY DEVICES AND SYSTEMS INCLUDING MULTI-LEVEL CELLS USING MODIFIED READ VOLTAGES AND METHODS OF OPERATING THE SAME 有权
标题翻译：使用改进的读取电压的非易失性存储器件和包括多级电池的系统及其操作方法
公开(公告)号：US20090003057A1
公开(公告)日：2009-01-01
申请号：US12145279
申请日：2008-06-24
申请人： Dong Gu Kang , Seungjae Lee , Donghyuk Chae
发明人： Dong Gu Kang , Seungjae Lee , Donghyuk Chae
IPC分类号： G11C16/04 , G11C16/06
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/3404
摘要： Methods of operating a multi-level non-volatile memory device can include accessing data, stored in the device, which is associated with read voltages and modifying the read voltages applied to a plurality of multi-level non-volatile memory cells to discriminate between states stored by the cells in response to a read operation to the multi-level non-volatile memory device. Related devices and systems are also disclosed.
摘要翻译：操作多级非易失性存储器件的方法可以包括访问与读取电压相关联的存储在器件中的数据，并修改施加到多个多级非易失性存储器单元的读取电压以区分状态响应于对多级非易失性存储器件的读取操作，由单元存储。还公开了相关的装置和系统。

7. 发明申请

US20090150751A1 MEMORY SYSTEM THAT USES AN INTERLEAVING SCHEME AND A METHOD THEREOF 有权
标题翻译：使用交互方案的记忆系统及其方法
公开(公告)号：US20090150751A1
公开(公告)日：2009-06-11
申请号：US12256784
申请日：2008-10-23
申请人： Nam Phil Jo , Dong Hyuk Chae , Sung Chung Park , Dong Gu Kang
发明人： Nam Phil Jo , Dong Hyuk Chae , Sung Chung Park , Dong Gu Kang
IPC分类号： G06F12/00 , H03M13/05 , G06F11/10
CPC分类号： G11C7/1042 , G06F11/1068 , G06F13/4239
摘要： A memory system includes a plurality of memory devices, a controller configured to control the plurality of memory devices, and at least one channel connected between the plurality of memory devices and the controller. The at least one channel includes input/output data lines and control signal lines, which are connected with the plurality of memory devices, and chip enable signal lines respectively connected to each of the plurality of memory devices, wherein the chip enable signal lines enable the plurality of memory devices independently. The controller sends a read command or a program command to one of the plurality of memory devices, and while the one of the plurality of memory devices is performing an internal read operation in response to the read command, the controller reads data from another one of the plurality of memory devices, or while the one of the plurality of memory devices is performing an internal program operation in response to the program command, the controller programs data to another one of the plurality of memory devices.
摘要翻译：存储器系统包括多个存储器件，被配置为控制多个存储器件的控制器以及连接在多个存储器件与控制器之间的至少一个通道。所述至少一个通道包括与所述多个存储器件连接的输入/输出数据线和控制信号线以及分别连接到所述多个存储器件中的每一个的芯片使能信号线，其中所述芯片使能信号线使得能够多个存储设备独立。控制器向多个存储器件之一发送读取命令或程序命令，并且当多个存储器件中的一个存储器件响应于读取命令执行内部读取操作时，控制器从另一个多个存储器件，或者当多个存储器件中的一个存储器件响应于程序命令执行内部程序操作时，控制器将数据编程到多个存储器件中的另一个。

8. 发明授权

US08243514B2 Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same 有权
标题翻译：非易失性存储器件和系统，包括使用修改的读取电压的多电平单元及其操作方法
公开(公告)号：US08243514B2
公开(公告)日：2012-08-14
申请号：US13081747
申请日：2011-04-07
申请人： Dong Gu Kang , Seungjae Lee , Donghyuk Chae
发明人： Dong Gu Kang , Seungjae Lee , Donghyuk Chae
IPC分类号： G11C11/34
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/3404
摘要： Methods of operating a multi-level non-volatile memory device can include accessing data, stored in the device, which is associated with read voltages and modifying the read voltages applied to a plurality of multi-level non-volatile memory cells to discriminate between states stored by the cells in response to a read operation to the multi-level non-volatile memory device. Related devices and systems are also disclosed.
摘要翻译：操作多级非易失性存储器件的方法可以包括访问与读取电压相关联的存储在器件中的数据，并修改施加到多个多级非易失性存储器单元的读取电压以区分状态响应于对多级非易失性存储器件的读取操作，由单元存储。还公开了相关的装置和系统。

9. 发明授权

US08667365B2 Flash memory system that uses an interleaving scheme for increasing data transfer performance between a memory device and a controller and a method therof 有权
标题翻译：闪存系统使用交织方案来增加存储设备和控制器之间的数据传输性能以及方法
公开(公告)号：US08667365B2
公开(公告)日：2014-03-04
申请号：US12256784
申请日：2008-10-23
申请人： Nam Phil Jo , Dong Hyuk Chae , Sung Chung Park , Dong Gu Kang
发明人： Nam Phil Jo , Dong Hyuk Chae , Sung Chung Park , Dong Gu Kang
IPC分类号： G06F11/00
CPC分类号： G11C7/1042 , G06F11/1068 , G06F13/4239
摘要： A memory system includes a plurality of memory devices, a controller configured to control the plurality of memory devices, and at least one channel connected between the plurality of memory devices and the controller. The at least one channel includes input/output data lines and control signal lines, which are connected with the plurality of memory devices, and chip enable signal lines respectively connected to each of the plurality of memory devices, wherein the chip enable signal lines enable the plurality of memory devices independently. The controller sends a read command or a program command to one of the plurality of memory devices, and while the one of the plurality of memory devices is performing an internal read operation in response to the read command, the controller reads data from another one of the plurality of memory devices, or while the one of the plurality of memory devices is performing an internal program operation in response to the program command, the controller programs data to another one of the plurality of memory devices.
摘要翻译：存储器系统包括多个存储器件，被配置为控制多个存储器件的控制器以及连接在多个存储器件与控制器之间的至少一个通道。所述至少一个通道包括与所述多个存储器件连接的输入/输出数据线和控制信号线以及分别连接到所述多个存储器件中的每一个的芯片使能信号线，其中所述芯片使能信号线使得能够多个存储设备独立。控制器向多个存储器件之一发送读取命令或程序命令，并且当多个存储器件中的一个存储器件响应于读取命令执行内部读取操作时，控制器从另一个多个存储器件，或者当多个存储器件中的一个存储器件响应于程序命令执行内部程序操作时，控制器将数据编程到多个存储器件中的另一个。

10. 发明授权

US07936601B2 Non-volatile memory devices and systems including multi-level cells using modified read voltages and methods of operating the same 有权
标题翻译：非易失性存储器件和系统，包括使用修改的读取电压的多电平单元及其操作方法
公开(公告)号：US07936601B2
公开(公告)日：2011-05-03
申请号：US12145279
申请日：2008-06-24
申请人： Dong Gu Kang , Seungjae Lee , Donghyuk Chae
发明人： Dong Gu Kang , Seungjae Lee , Donghyuk Chae
IPC分类号： G11C11/34
CPC分类号： G11C16/26 , G11C11/5642 , G11C16/3404
摘要： Methods of operating a multi-level non-volatile memory device can include accessing data, stored in the device, which is associated with read voltages and modifying the read voltages applied to a plurality of multi-level non-volatile memory cells to discriminate between states stored by the cells in response to a read operation to the multi-level non-volatile memory device. Related devices and systems are also disclosed.
摘要翻译：操作多级非易失性存储器件的方法可以包括访问与读取电压相关联的存储在器件中的数据，并修改施加到多个多级非易失性存储器单元的读取电压以区分状态响应于对多级非易失性存储器件的读取操作，由单元存储。还公开了相关的装置和系统。

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