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1. 发明授权

US07615771B2 Memory array having memory cells formed from metallic material 有权
标题翻译：具有由金属材料形成的存储单元的存储器阵列
公开(公告)号：US07615771B2
公开(公告)日：2009-11-10
申请号：US11380498
申请日：2006-04-27
申请人： Robert E. Fontana, Jr. , Eric E. Fullerton , Stefan Maat , Jan-Ulrich Thiele
发明人： Robert E. Fontana, Jr. , Eric E. Fullerton , Stefan Maat , Jan-Ulrich Thiele
IPC分类号： H01L27/20
CPC分类号： G11C11/16 , G11C11/1675
摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.
摘要翻译：公开了由交叉点存储器阵列组成的固态存储器。交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。存储器阵列还包括位于第一和第二导线之间的多个存储单元。存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。一阶相变导致金属材料的电阻率的相应变化。

2. 发明授权

US06834026B2 Method for thermally-assisted recording on a magnetic recording disk 失效
标题翻译：在磁记录盘上进行热辅助记录的方法
公开(公告)号：US06834026B2
公开(公告)日：2004-12-21
申请号：US10626362
申请日：2003-07-23
申请人： Eric E. Fullerton , Stefan Maat , Jan-Ulrich Thiele
发明人： Eric E. Fullerton , Stefan Maat , Jan-Ulrich Thiele
IPC分类号： G11B1100
CPC分类号： G11B5/66 , G11B5/82 , G11B2005/0002 , G11B2005/0021 , Y10T428/24802
摘要： A magnetic recording medium for thermally-assisted recording is a bilayer of a high-coercivity, high-anisotropy ferromagnetic material like FePt and a switching material like FeRh or Fe(RhM) (where M is Ir, Pt, Ru, Re or Os) that exhibits a switch from antiferromagnetic to ferromagnetic at a transition temperature less than the Curie temperature of the high-coercivity material. The high-coercivity recording layer and the switching layer are exchange coupled ferromagnetically when the switching layer is in its ferromagnetic state. To write data the bilayer medium is heated above the transition temperature of the switching layer. When the switching layer becomes ferromagnetic, the total magnetization of the bilayer is increased, and consequently the switching field required to reverse a magnetized bit is decreased without lowering the anisotropy of the recording layer. The magnetic bit pattern is recorded in both the recording layer and the switching layer. When the media is cooled to below the transition temperature of the switching layer, the switching layer becomes antiferromagnetic and the bit pattern remains in the high-anisotropy recording layer.
摘要翻译：用于热辅助记录的磁记录介质是诸如FePt的高矫顽力，高各向异性铁磁材料和诸如FeRh或Fe（RhM）（其中M是Ir，Pt，Ru，Re或Os）的开关材料的双层，其在低于高矫顽力材料的居里温度的转变温度下表现出从反铁磁转变为铁磁。当高矫顽力记录层和开关层在开关层处于其铁磁状态时，铁磁性交换耦合。为了写入数据，双层介质被加热到开关层的转变温度之上。当开关层成为铁磁性时，双层的总磁化强度增加，因此在不降低记录层的各向异性的情况下降低了使磁化位反转所需的切换场。磁记录层记录在记录层和切换层中。当介质冷却到切换层的转变温度以下时，开关层变为反铁磁性，并且位图形保留在高各向异性记录层中。

3. 发明申请

US20050281081A1 Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh 有权
标题翻译：利用FeRh中的反铁磁性铁磁转变，在MRAM单元中进行热辅助切换
公开(公告)号：US20050281081A1
公开(公告)日：2005-12-22
申请号：US10869315
申请日：2004-06-16
申请人： Eric Fullerton , Stefan Maat , Jan-Ulrich Thiele
发明人： Eric Fullerton , Stefan Maat , Jan-Ulrich Thiele
IPC分类号： G11C11/15 , G11C11/16
CPC分类号： G11C11/16 , G11C11/1675
摘要： A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell.
摘要翻译：一种用于磁随机存取存储器阵列的磁存储单元，其使用FeRh的反铁磁性铁磁转变特性来协助控制存储器单元的切换。

4. 发明授权

US07372116B2 Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh 有权
标题翻译：利用FeRh中的反铁磁性铁磁转变，在MRAM单元中进行热辅助切换
公开(公告)号：US07372116B2
公开(公告)日：2008-05-13
申请号：US10869315
申请日：2004-06-16
申请人： Eric Edward Fullerton , Stefan Maat , Jan-Ulrich Thiele
发明人： Eric Edward Fullerton , Stefan Maat , Jan-Ulrich Thiele
IPC分类号： H01L29/82 , G11C11/14
CPC分类号： G11C11/16 , G11C11/1675
摘要： A magnetic memory cell for use in a magnetic random access memory array that uses the antiferromagnetic to ferromagnetic transition properties of FeRh to assist in the control of switching of the memory cell.
摘要翻译：一种用于磁随机存取存储器阵列的磁存储单元，其使用FeRh的反铁磁性铁磁转变特性来协助控制存储器单元的切换。

5. 发明申请

US20070253243A1 MEMORY ARRAY HAVING MEMORY CELLS FORMED FROM METALLIC MATERIAL 有权
标题翻译：具有从金属材料形成的记忆细胞的记忆阵列
公开(公告)号：US20070253243A1
公开(公告)日：2007-11-01
申请号：US11380498
申请日：2006-04-27
申请人： Robert Fontana , Eric Fullerton , Stefan Maat , Jan-Ulrich Thiele
发明人： Robert Fontana , Eric Fullerton , Stefan Maat , Jan-Ulrich Thiele
IPC分类号： G11C11/14
CPC分类号： G11C11/16 , G11C11/1675
摘要： Solid-state memories are disclosed that are comprised of cross-point memory arrays. The cross-point memory arrays include a first plurality of electrically conductive lines and a second plurality of electrically conductive lines that cross over the first plurality of electrically conductive lines. The memory arrays also include a plurality of memory cells located between the first and second conductive lines. The memory cells are formed from a metallic material, such as FeRh, having the characteristic of a first order phase transition due to a change in temperature. The first order phase transition causes a corresponding change in resistivity of the metallic material.
摘要翻译：公开了由交叉点存储器阵列组成的固态存储器。交叉点存储器阵列包括跨越第一多个导电线的第一多个导电线和第二多个导电线。存储器阵列还包括位于第一和第二导线之间的多个存储单元。存储单元由诸如FeRh的金属材料形成，具有由温度变化引起的一阶相变的特性。一阶相变导致金属材料的电阻率的相应变化。

6. 发明申请

US20080100964A1 MAGNETIC RECORDING SYSTEM WITH MEDIUM HAVING ANTIFERROMAGNETIC-TO- FERROMAGNETIC TRANSITION LAYER EXCHANGE-COUPLED TO RECORDING LAYER 审中-公开
标题翻译：磁记录系统，具有与抗磁反应转移层交换耦合到记录层的介质
公开(公告)号：US20080100964A1
公开(公告)日：2008-05-01
申请号：US11553215
申请日：2006-10-26
申请人： Eric Edward Fullerton , Stefan Maat , Ian Robson McFadyen , Jan-Ulrich Thiele
发明人： Eric Edward Fullerton , Stefan Maat , Ian Robson McFadyen , Jan-Ulrich Thiele
IPC分类号： G11B5/82 , G11B5/65
CPC分类号： G11B5/64 , G11B5/1278 , G11B5/3103
摘要： A magnetic recording disk drive has a bilayer recording medium of a high-anisotropy recording layer and an exchange-coupled antiferromagnetic-to-ferromagnetic (AF-F) transition layer. The transition layer has an AF-F transition temperature (TAF-F) that decreases relatively rapidly with increasing applied magnetic field. Thus the transition layer has a transition field HAF-F(T), which is the applied magnetic field required to transition the material from antiferromagnetic to ferromagnetic at temperature T without the need to heat the layer. At ambient temperature and in the absence of HW, the transition layer is antiferromagnetic and the switching field H0 of the bilayer is just the H0 of the high-anisotropy recording layer, which is typically much higher than HW. In the presence of the write field HW the transition layer transitions from antiferromagnetic to ferromagnetic so that data can be written to the recording by the mere application of the write field HW without the need to heat the transition layer or recording layer. The transition layer may be formed of Fe(RhM), where M is an element selected from V, Mn, Au and Ni.
摘要翻译：磁记录盘驱动器具有高各向异性记录层和交换耦合的反铁磁到铁磁（AF-F）过渡层的双层记录介质。过渡层具有随着施加的磁场增加而相对快速地减小的AF-F转变温度（T AF AF F F）。因此，过渡层具有过渡场H AF-F（T），其是在温度T下将材料从反铁磁转变为铁磁所需的施加磁场，而不需要加热该层。在环境温度下和在不存在的情况下，过渡层是反铁磁性的，并且双层的开关场H 0正好是H

7. 发明授权

US08178158B2 Method for making a current-perpendicular-to-the-plane giant magnetoresistance (CPP-GMR) sensor with a confined-current-path (CCP) 有权
标题翻译：制造具有限流电路（CCP）的电流垂直于平面的巨磁阻（CPP-GMR）传感器的方法
公开(公告)号：US08178158B2
公开(公告)日：2012-05-15
申请号：US12131863
申请日：2008-06-02
申请人： Thomas R. Berthold , Matthew J. Carey , Jeffrey R. Childress , Jordan Asher Katine , Stefan Maat
发明人： Thomas R. Berthold , Matthew J. Carey , Jeffrey R. Childress , Jordan Asher Katine , Stefan Maat
IPC分类号： G11B5/00 , G11B5/127 , G11B5/133
CPC分类号： H01F41/307 , B82Y10/00 , B82Y25/00 , B82Y30/00 , B82Y40/00 , G01R33/093 , G11B5/3906 , G11B2005/3996 , H01F10/005 , H01F10/3259 , H01F10/3272
摘要： A method of making a current-perpendicular-to-the-plane giant magnetoresistive (CPP-GMR) sensor with a confined-current-path (CCP) layer uses an array of self-assembled ferritin protein molecules with inorganic cores to make the CCP layer in the sensor stack. In one embodiment, the ferritin molecules with cores of insulating oxide particles are deposited on an electrically conductive support layer and the ferritin molecules are dissolved, leaving an array of insulating oxide particles. An electrically conducting layer is deposited over the oxide particles and into the regions between the oxide particles to form the CCP layer. In another embodiment, the ferritin molecules with inorganic particles in their cores are deposited on an electrically insulating support layer and the ferritin molecules are dissolved, leaving an array of inorganic particles that function as an etch mask. The insulating support layer is then etched through the mask to form vias down to the underlying layer on which the support layer is formed. An electrically conducting layer is then deposited to form the CCP layer.
摘要翻译：使用限制电流路径（CCP）层制造电流垂直于平面的巨磁阻（CPP-GMR）传感器的方法使用具有无机芯的自组装铁蛋白分子阵列来制备CCP 传感器堆叠中的层。在一个实施方案中，具有绝缘氧化物颗粒核心的铁蛋白分子沉积在导电支撑层上，铁蛋白分子溶解，留下绝缘氧化物颗粒阵列。将导电层沉积在氧化物颗粒上并进入氧化物颗粒之间的区域中以形成CCP层。在另一个实施方案中，其核心中具有无机颗粒的铁蛋白分子沉积在电绝缘支撑层上，并且铁蛋白分子被溶解，留下用作蚀刻掩模的无机颗粒阵列。然后通过掩模蚀刻绝缘支撑层，以形成通向下面到其上形成有支撑层的下层的通孔。然后沉积导电层以形成CCP层。

8. 发明授权

US08154829B2 Tunneling magnetoresistive (TMR) device with improved ferromagnetic underlayer for MgO tunneling barrier layer 有权
标题翻译：隧道磁阻（TMR）器件具有用于MgO隧道势垒层的改进的铁磁底层
公开(公告)号：US08154829B2
公开(公告)日：2012-04-10
申请号：US12553864
申请日：2009-09-03
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： H01L43/10 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B5/3909
摘要： A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording hard disk drive, has a magnesium oxide (MgO) tunneling barrier layer and a ferromagnetic underlayer beneath and in direct contact with the MgO tunneling barrier layer. The ferromagnetic underlayer comprises a crystalline material according to the formula (CoxFe(100-x))(100-y)Gey, where the subscripts represent atomic percent, x is between about 45 and 55, and y is between about 26 and 37. The ferromagnetic underlayer may be the CoxFe(100-x))(100-y)Gey portion of a bilayer of two ferromagnetic layers, for example a CoFe/(CoxFe(100-x))(100-y)Gey bilayer. The specific composition of the ferromagnetic underlayer improves the crystallinity of the MgO tunneling barrier after annealing and improves the tunneling magnetoresistance of the TMR device.
摘要翻译：隧道磁阻（TMR）器件，如磁记录硬盘驱动器的TMR读头，具有氧化镁（MgO）隧道势垒层和在MgO隧道势垒层下面直接接触的铁磁性底层。铁磁底层包含根据式（CoxFe（100-x））（100-y）Gey的结晶材料，其中下标表示原子百分比，x在约45和55之间，y在约26和37之间。铁磁性底层可以是两个铁磁层的双层的CoxFe（100-x））（100-y）Gey部分，例如CoFe /（CoxFe（100-x））（100-y）Gey双层。铁磁性底层的具体组成提高了退火后MgO隧道势垒的结晶度，提高了TMR器件的隧穿磁阻。

9. 发明申请

US20120063034A1 CURRENT-PERPENDICULAR-TO-THE-PLANE (CPP) MAGNETORESISTIVE (MR) SENSOR WITH IMPROVED INSULATING STRUCTURE 审中-公开
标题翻译：具有改进的绝缘结构的电流 - 平面（CPP）磁传感器（MR）传感器
公开(公告)号：US20120063034A1
公开(公告)日：2012-03-15
申请号：US12880953
申请日：2010-09-13
申请人： Yimin Hsu , Cherngye Hwang , Simon Huangchung Liao , Stefan Maat
发明人： Yimin Hsu , Cherngye Hwang , Simon Huangchung Liao , Stefan Maat
IPC分类号： G11B5/127
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3932 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive (MR) sensor, like a CPP MR disk drive read head, has an improved insulating structure surrounding the stack of layers making up the sensor. The sensor has a first silicon nitride layer with a thickness between about 1 and 5 nm on the side edges of the sensor and on regions of the bottom shield layer adjacent the sensor below the sensor's ferromagnetic biasing layer. The sensor has a second silicon nitride layer with a thickness between about 2 and 5 nm on the back edge of the sensor and on the region of the bottom shield layer adjacent the sensor back edge, and a substantially thicker metal oxide layer on the second silicon nitride layer. The insulating structure prevents edge damage at the perimeter of the sensor and thus allows for the fabrication of CPP MR read heads with substantially smaller dimensions.
摘要翻译：电流垂直平面（CPP）磁阻（MR）传感器，如CPP MR磁盘驱动器读头，具有围绕构成传感器的层叠层的改进的绝缘结构。传感器具有在传感器的侧边缘上的厚度在约1和5nm之间的第一氮化硅层以及与传感器的铁磁偏置层下方的传感器相邻的底部屏蔽层的区域。传感器具有在传感器的后边缘上和厚度在约2和5nm之间的第二氮化硅层，并且在与底部屏蔽层相邻的传感器后边缘的区域上，以及在第二硅上的基本上较厚的金属氧化物层氮化物层。绝缘结构防止传感器周边的边缘损坏，从而允许制造具有基本较小尺寸的CPP MR读取头。

10. 发明授权

US07957107B2 Current-perpendicular-to-the-plane (CPP) magnetoresistive sensor with antiparallel-free layer structure and low current-induced noise 有权
标题翻译：具有反平行自由层结构和低电流感应噪声的电流垂直平面（CPP）磁阻传感器
公开(公告)号：US07957107B2
公开(公告)日：2011-06-07
申请号：US12502764
申请日：2009-07-14
申请人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
发明人： Matthew J. Carey , Jeffrey R. Childress , Stefan Maat , Neil Smith
IPC分类号： G11B5/39
CPC分类号： G01R33/093 , B82Y10/00 , B82Y25/00 , G11B5/3912 , G11B5/3932 , G11B2005/3996
摘要： A current-perpendicular-to-the-plane (CPP) magnetoresistive sensor has an antiparallel free (APF) structure as the free layer and a specific direction for the applied bias or sense current. The (APF) structure has a first free ferromagnetic (FL1), a second free ferromagnetic layer (FL2), and an antiparallel (AP) coupling (APC) layer that couples FL1 and FL2 together antiferromagnetically with the result that FL1 and FL2 have substantially antiparallel magnetization directions and rotate together in the presence of a magnetic field. The thickness of FL1 is preferably greater than the spin-diffusion length of the electrons in the FL1 material. The minimum thickness for FL2 is a thickness resulting in a FL2 magnetic moment equivalent to at least 10 Å Ni80Fe20 and preferably to at least 15 Å Ni80Fe20. The CPP sensor operates specifically with the conventional sense current (opposite the electron current) directed from the pinned ferromagnetic layer to the APF structure, which results in suppression of current-induced noise.
摘要翻译：电流垂直平面（CPP）磁阻传感器具有作为自由层的反向平行自由（APF）结构和施加的偏置或感测电流的特定方向。（APF）结构具有第一自由铁磁（FL1），第二自由铁磁层（FL2）和反FL-FL2与FL2耦合的反并联（AP）耦合（APC）层，其结果是FL1和FL2具有实质上反平行磁化方向，并且在存在磁场的情况下一起旋转。 FL1的厚度优选大于FL1材料中的电子的自旋扩散长度。 FL2的最小厚度是导致等于至少10埃NiFeFe 2的FL2磁矩并且优选至少为15埃的Ni38Fe20的厚度。 CPP传感器与从钉扎铁磁层引导到APF结构的常规感测电流（与电子电流相反）特别地工作，这导致电流引起的噪声的抑制。

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