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    • 8. 发明申请
    • MAGNETRON SPUTTERING APPARATUS
    • MAGNETRON喷射装置
    • US20140027278A1
    • 2014-01-30
    • US14036183
    • 2013-09-25
    • TOKYO ELECTRON LIMITEDNATIONAL UNIVERSITY CORPORATION TOHOKU UNIVERSITY
    • Tadahiro OhmiTetsuya GotoTakaaki Matsuoka
    • C23C14/35
    • C23C14/35H01J37/3405H01J37/3455
    • A magnetron sputtering apparatus for processing a substrate includes a target holding member for holding a target installed to face the substrate and a magnet installed at a side opposite to the substrate across the target. In the magnetron sputtering apparatus, plasma is confined on a surface of the target by forming a magnetic field on the target surface by the magnet, on the target surface, a plasma loop is formed around a region on a loop where a vertical magnetic field component perpendicular to the target does not substantially exist while a horizontal magnetic field component parallel to the target mainly exists, and the horizontal magnetic field component at all position on the loop where the horizontal magnetic field mainly exists is in a range of about 500 Gauss to 1200 Gauss.
    • 用于处理基板的磁控管溅射装置包括:用于保持安装成面向基板的目标的目标保持构件和安装在穿过目标的基板的相对侧的磁体。 在磁控管溅射装置中,通过在目标表面上通过磁体在目标表面上形成磁场,将等离子体限制在靶的表面上,在环上的区域周围形成等离子体环,其中垂直磁场分量 主要存在垂直于目标的水平磁场分量,而主要存在于水平磁场的环路上的水平磁场分量在大约500高斯至1200的范围内 高斯