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    • 8. 发明申请
    • Nonvolatile memory device and method of forming the same
    • 非易失存储器件及其形成方法
    • US20070040211A1
    • 2007-02-22
    • US11209145
    • 2005-08-22
    • Shao KuYin ChenWenpin LuTahui Wang
    • Shao KuYin ChenWenpin LuTahui Wang
    • H01L29/792
    • H01L29/7923H01L29/1045
    • A multi-bit memory cell includes a substrate; a multi-bit charge-trapping cell over the substrate, the multi-bit charge-trapping cell having a first lateral side and a second lateral side; a source region in the substrate, a portion of the source region being under the first side of the multi-bit charge-trapping cell; a drain region in the substrate, a portion of the drain region being under the second side of the multi-bit charge-trapping cell; and a channel region in the substrate between the source region and the drain region. The channel region has one of a p-type doping and an n-type doping, and the doping is configured to provide a highest doping concentration near the central portion of the channel region.
    • 多位存储单元包括基板; 位于衬底上的多位电荷俘获电池,所述多位电荷俘获电池具有第一侧面和第二侧面; 源区域,源区域中的一部分位于多位电荷捕获单元的第一侧之下; 所述衬底中的漏极区域,所述漏极区域的一部分位于所述多位电荷俘获电池的第二侧的下方; 以及在源极区域和漏极区域之间的衬底中的沟道区域。 沟道区具有p型掺杂和n型掺杂之一,并且掺杂被配置为在沟道区的中心部分附近提供最高的掺杂浓度。