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    • 2. 发明申请
    • STABLE THERMOELECTRIC DEVICES
    • 稳定的热电装置
    • WO2012045312A1
    • 2012-04-12
    • PCT/DK2011/050377
    • 2011-10-05
    • AARHUS UNIVERSITETPANCO GmbHPLATZEK, DieterIVERSEN, Bo BrummerstedtCHRISTENSEN, Mogens
    • PLATZEK, DieterIVERSEN, Bo BrummerstedtCHRISTENSEN, Mogens
    • H01L35/18H01L35/06
    • H01L35/34H01L35/06H01L35/18Y10T29/49002
    • The present invention relates to a thermoelectric device 100A comprising a layered structure comprising a first layer 106, a first electrical connector 102, a second electrical connector 104, and a second layer 108 being different from the first layer 106, where the first layer comprises a material having the stoichiometric formula Zn4Sb3 (zinc antimonide)and the second layer 108 comprises Zn (zinc). The first layer 106 is being placed between the first and second electrical connector 102, 104, and the second layer 108 is placed between the first layer 106 and the first electrical connector 102. By having a second layer 108 comprising Zn the negative effects of electromigration of Zn may be overcome, since Zn may emanate from the foil and refill Zn depleted regions in the first layer. In a particular embodiment the second layer is a foil. In another particular embodiment, the first layer is doped with an element such as magnesium.
    • 本发明涉及一种包括分层结构的热电器件100A,其包括第一层106,第一电连接器102,第二电连接器104和与第一层106不同的第二层108,其中第一层包括 具有化学计量式Zn 4 Sb 3(锑化锌)和第二层108的材料包含Zn(锌)。 第一层106被放置在第一和第二电连接器102,104之间,并且第二层108被放置在第一层106和第一电连接器102之间。通过具有包含Zn的第二层108具有电迁移的负面影响 的Zn可被克服,因为Zn可以从箔发出并且填充第一层中的Zn贫化区。 在特定实施例中,第二层是箔。 在另一个具体实施方案中,第一层掺杂有诸如镁的元素。