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    • 7. 发明申请
    • SINGLE-POLE-SINGLE-THROW (SPST) SWITCH AND ITS DERIVATIVE SINGLE-POLE-DOUBLE-THROW (SPDT) AND SINGLE-POLE-MULTIPLE-THROW (SPMT) SWITCHES
    • 单点波(SPST)开关及其衍生单点双通道(SPDT)和单通道多通道(SPMT)开关
    • US20170040996A1
    • 2017-02-09
    • US15230366
    • 2016-08-05
    • Huan Zhao
    • Huan Zhao
    • H03K17/687
    • H03K17/693
    • A Single-Pole-Single-Throw (SPST) switch for RF application is disclosed that can include a semiconductor MOSFET transistor T, wherein its drain terminal can be connected to a resistor R3 and capacitor C2. It can have a source terminal connected to a resistor R1 and capacitor C1, a gate terminal connected to resistor R2, a body connected by resistor R4 to GND, and the body can be connected to the anode of a diode DE The Cathode of diode D1 can be connected to a power supply Vdd through a resistor R6. The Cathode of diode D1 can also be connected to the cathode of another diode D2. The anode of D2 can be connected to GND through resistor R5. Capacitor C1 can be connected to an I/O port P1, and capacitor C2 can be connected to an I/O port P2. Inductor L1 can connect to ports P1 and P2, while inductor L2 can connect the source terminal and drain terminal of MOSPET T. This disclosure also provides a Single-Pole-Double-Throw (SPDT) switch and Single-Pole-Multiple-Throw (SPMT) switch based on the proposed SPST concept. The SPST disclosed can offer higher isolation and higher linearity to the transmit (TX) arm of the Radio-Frequency Front-End-Module (RF FEM), while maintaining relatively good performance in the receive (RX) arm of the RF FEM.
    • 公开了用于RF应用的单极单掷(SPST)开关,其可以包括半导体MOSFET晶体管T,其中其漏极端子可以连接到电阻器R3和电容器C2。 它可以将源极端子连接到电阻器R1和电容器C1,连接到电阻器R2的栅极端子,电阻器R4连接到GND的主体,并且主体可以连接到二极管的阳极DE二极管D1的阴极 可以通过电阻R6连接到电源Vdd。 二极管D1的阴极也可以连接到另一个二极管D2的阴极。 D2的阳极可以通过电阻R5连接到GND。 电容器C1可以连接到I / O端口P1,电容器C2可以连接到I / O端口P2。 电感L1可以连接到端口P1和P2,而电感器L2可以连接MOSPET T的源极端子和漏极端子。本公开还提供了单极双掷(SPDT)开关和单极多掷(Single-Pole-Multi-Throw) SPMT)基于提出的SPST概念进行切换。 所公开的SPST可以在射频前端模块(RF FEM)的发射(TX)臂上提供更高的隔离度和更高的线性度,同时在RF FEM的接收(RX)臂中保持较好的性能。