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    • 8. 发明授权
    • X-ray equipment
    • X光设备
    • US07206381B2
    • 2007-04-17
    • US10507204
    • 2004-01-09
    • Takashi ShimonoKatsunori Shimizu
    • Takashi ShimonoKatsunori Shimizu
    • H01J35/14
    • H01J35/14H01J35/18H01J35/30H01J2235/186
    • An x-ray tube (1) irradiates an electron beam from a cathode (18) to impact a target (36) and emit x-rays. When the x-ray tube (1) operates, the magnet portion (40) is rotated every fixed time period and positioned at a prescribed rotation position. Due to the rotation of the magnet portion (40), the magnetic field formed by the permanent magnets (42) changes and the irradiation position on the target (36) of the electron beam moves. As a result, the electron beam is irradiated at a new position on the target (36) and the same amount of x-ray as the initial performance is generated.
    • X射线管(1)照射来自阴极(18)的电子束以撞击靶(36)并发射X射线。 当X射线管(1)工作时,磁体部分(40)每固定时间周期旋转并且位于规定的旋转位置。 由于磁体部分(40)的旋转,由永磁体(42)形成的磁场发生变化,并且电子束的靶(36)上的照射位置移动。 结果,电子束被照射在目标(36)上的新位置,并且产生与初始性能相同量的x射线。
    • 10. 发明授权
    • Process for fabricating a wiring layer of aluminum or aluminum alloy on
semiconductor devices
    • 在半导体器件上制造铝或铝合金的布线层的工艺
    • US4547260A
    • 1985-10-15
    • US598741
    • 1984-04-10
    • Tadakazu TakadaKatsunori Shimizu
    • Tadakazu TakadaKatsunori Shimizu
    • H01L21/02H01L21/302H01L21/3065H01L21/3213C23F1/02B44C1/22C03C15/00C03C25/06
    • H01L21/02071H01L21/302
    • In the fabrication of an aluminum or aluminum alloy wiring layer on a semiconductor device by dry etching using a gas containing chlorine species, a plasma exposure step inserted into the dry etching process in order to avoid the problems due to using a chlorine radical etchant. One half thickness of the aluminum layer, which is selectively masked by a resist mask film, on a semiconductor substrate is etched by a reactive ion etching technique using an etchant gas composed of CCl.sub.4 +BCl.sub.3, and then exposed to a plasma of a gas composed of CF.sub.4 +O.sub.2 generated by RF power. After the plasma exposure, the remaining thickness of the aluminum film is etched off under the same conditions as in the preceeding reactive ion etching. As the result, the amount of side etching is reduced to one half that of the case without the plasma exposure step, and corrosion originating from aluminum chlorides, products of the reactive ion etching, is eliminated. And further, the residual polysilicon layer, which is usually formed when Al-Si film is etched by using a gas containing chlorine as a reactive species, is also reduced.
    • 在通过使用含氯气体的干蚀刻在半导体器件上制造铝或铝合金布线层时,将等离子体暴露步骤插入到干蚀刻工艺中,以避免由于使用氯根腐蚀剂而引起的问题。 通过使用由CCl 4 + BCl 3组成的蚀刻剂气体的反应离子蚀刻技术蚀刻在半导体衬底上被抗蚀剂掩模膜选择性地掩蔽的铝层的一半厚度,然后暴露于构成的气体的等离子体 由RF功率产生的CF4 + O2。 在等离子体暴露后,在与之前的反应离子蚀刻相同的条件下,蚀刻掉铝膜的剩余厚度。 结果,侧蚀刻的量减少到没有等离子体曝光步骤的情况的一半,并且消除了源自氯化铝的腐蚀反应离子蚀刻产物的腐蚀。 此外,通过使用含氯气体作为反应性物质蚀刻Al-Si膜时通常形成的残留多晶硅层也减少。