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1. 发明授权

US08815106B2 Method of supplying etching gas and etching apparatus 有权
标题翻译：提供蚀刻气体和蚀刻装置的方法
公开(公告)号：US08815106B2
公开(公告)日：2014-08-26
申请号：US13206875
申请日：2011-08-10
申请人： Masahiro Ogasawara , Yoshiyuki Kato , Hideki Mizuno , Yoshinobu Hayakawa
发明人： Masahiro Ogasawara , Yoshiyuki Kato , Hideki Mizuno , Yoshinobu Hayakawa
IPC分类号： B44C1/22 , H01L21/3065 , H01J37/32
CPC分类号： H01L21/30655 , H01J37/32091 , H01J37/32449 , H01J2237/3341
摘要： A method of supplying an etching gas includes: supplying a first etching gas used in an etching process into a processing container; and supplying a second etching gas used in the etching process into the processing container, in which, when the first etching gas and the second etching gas are switched therebetween, only a small amount of a gas, which is needed as an etching gas before the switching and is not needed as an etching gas after the switching, is continuously supplied into the processing container.
摘要翻译：提供蚀刻气体的方法包括：将用于蚀刻工艺的第一蚀刻气体供应到处理容器中; 并且将在蚀刻工艺中使用的第二蚀刻气体供应到处理容器中，其中当第一蚀刻气体和第二蚀刻气体在其之间切换时，仅仅少量的气体作为蚀刻气体切换并且不需要切换之后的蚀刻气体，被连续地供给到处理容器中。

2. 发明授权

US07300881B2 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US07300881B2
公开(公告)日：2007-11-27
申请号：US10935103
申请日：2004-09-08
申请人： Kazuya Kato , Katsuhiko Ono , Hideki Mizuno , Masahiro Ogasawara , Akinori Kitamura , Noriyuki Kobayashi , Yasushi Inata , Shin Okamoto
发明人： Kazuya Kato , Katsuhiko Ono , Hideki Mizuno , Masahiro Ogasawara , Akinori Kitamura , Noriyuki Kobayashi , Yasushi Inata , Shin Okamoto
IPC分类号： H01L21/302 , H01L21/3065
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138
摘要： A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.
摘要翻译：在具有图案的基板上进行等离子体蚀刻，其中形成在抗蚀剂掩模上的相邻开口之间的间隔等于或小于200nm，其中通过将包括活性物质产生气体的处理气体转化为包括具有碳和氟的化合物，以及包含氙气进入等离子体的非反应性气体。非反应性气体还包括氩气。

3. 发明申请

US20050101137A1 Plasma etching method 有权
标题翻译：等离子蚀刻法
公开(公告)号：US20050101137A1
公开(公告)日：2005-05-12
申请号：US10935103
申请日：2004-09-08
申请人： Kazuya Kato , Katsuhiko Ono , Hideki Mizuno , Masahiro Ogasawara , Akinori Kitamura , Noriyuki Kobayashi , Yasushi Inata , Shin Okamoto
发明人： Kazuya Kato , Katsuhiko Ono , Hideki Mizuno , Masahiro Ogasawara , Akinori Kitamura , Noriyuki Kobayashi , Yasushi Inata , Shin Okamoto
IPC分类号： H01L21/28 , H01L21/3065 , H01L21/311 , H01L21/768 , H01L21/302 , H01L21/461
CPC分类号： H01J37/32082 , H01L21/31116 , H01L21/31138
摘要： A plasma etching is performed on a substrate having a pattern wherein an interval between neighboring openings formed on a resist mask is equal to or less than 200 nm, wherein the etching is performed by converting a processing gas comprising an active species generating gas which includes a compound having carbon and fluorine, and a nonreactive gas which includes xenon gas into a plasma. The nonreactive gas further includes argon gas.
摘要翻译：在具有图案的基板上进行等离子体蚀刻，其中形成在抗蚀剂掩模上的相邻开口之间的间隔等于或小于200nm，其中通过将包括活性物质产生气体的处理气体转化为包括具有碳和氟的化合物，以及包含氙气进入等离子体的非反应性气体。非反应性气体还包括氩气。

4. 发明授权

US6018189A Lead frame for face-down bonding 失效
标题翻译：用于面朝下接合的引线框架
公开(公告)号：US6018189A
公开(公告)日：2000-01-25
申请号：US52156
申请日：1998-03-31
申请人： Hideki Mizuno
发明人： Hideki Mizuno
IPC分类号： H01L21/60 , H01L21/607 , H01L23/495 , H01L23/50
CPC分类号： H01L24/81 , H01L23/49548 , H01L24/75 , H01L2224/1134 , H01L2224/13144 , H01L2224/16 , H01L2224/16237 , H01L2224/16245 , H01L2224/45144 , H01L2224/48245 , H01L2224/48247 , H01L2224/75 , H01L2224/75302 , H01L2224/75743 , H01L2224/8014 , H01L2224/81136 , H01L2224/8114 , H01L2224/81205 , H01L2224/81801 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01004 , H01L2924/01005 , H01L2924/01006 , H01L2924/01023 , H01L2924/01029 , H01L2924/01033 , H01L2924/01047 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01082 , H01L2924/14
摘要： In a lead frame for face-down bonding, plural leads (3) are bonded to bumps (2) formed on electrodes of a semiconductor chip (1) by face-down bonding based on ultrasonic wave, and grooves (4) having V-shaped cross section are formed on the leads (3) at tip positions at which the leads (3) are bonded to the bumps (2). The leads comprise a first lead extending in a first direction and a second lead extending in a second direction which is different from the first direction, and all the grooves (4) extend in the same direction irrespective of the direction of the lead (3). Ultrasonic wave bonding is performed in the direction of the V-shaped groove (4) to move the bump (2) in the direction of the V-shaped groove (4) and weld the bump (2) and the lead (3) at the contact surface with the V-shaped groove (4), so that the bonding strength of the bump (2) and the lead (3) can be made uniform.
摘要翻译：在用于面朝下接合的引线框架中，通过基于超声波的面向下接合将多个引线（3）接合到形成在半导体芯片（1）的电极上的凸块（2），并且具有V形的沟槽（4）在引线（3）接合到凸块（2）的尖端位置处，在引线（3）上形成截面形状。引线包括沿第一方向延伸的第一引线和沿与第一方向不同的第二方向延伸的第二引线，并且所有的沟槽（4）不管引线（3）的方向如何沿相同的方向延伸，。在V形槽（4）的方向上进行超声波接合，以使凸块（2）沿V形槽（4）的方向移动，并将凸块（2）和引线（3）焊接在与V形槽（4）的接触表面，使得凸块（2）和引线（3）的接合强度可以均匀。

5. 发明授权

US6084310A Semiconductor device, lead frame, and lead bonding 失效
标题翻译：半导体器件，引线框架和引线接合
公开(公告)号：US6084310A
公开(公告)日：2000-07-04
申请号：US63055
申请日：1998-04-21
申请人： Hideki Mizuno , Mitsunori Kanemoto
发明人： Hideki Mizuno , Mitsunori Kanemoto
IPC分类号： H01L21/60 , H01L21/56 , H01L23/495 , H01L23/50 , H01L23/48
CPC分类号： H01L23/49562 , H01L21/565 , H01L2224/16245 , H01L2224/45144 , H01L2924/00014 , H01L2924/01046 , H01L2924/01078 , H01L2924/01079
摘要： In a semiconductor device, each of a plurality of leads has a chip mounting portion electrically connected to the semiconductor chip through a bump and a lead main body supporting the chip mounting portion. A lead path from the distal end of the lead main body to the bump is bent in X, Y, and Z directions so that the distal end portion of the lead main body and the chip mounting portion are arranged on different levels when viewed from a side surface. The lead main body and the chip mounting portion substantially make a right angle to form an L shape when viewed from an upper side. The semiconductor chip is connected, through bumps, to upper surfaces of distal end portions of the chip mounting portions of the leads on a plane. A molded body seals constituent elements except a part separated from a connection portion between the lead main body and the chip mounting portion, and incorporates a bent portion of the lead main body. Each lead is arranged such that the chip mounting portions are arranged on both sides of a centerline of the semiconductor device in a longitudinal direction to be parallel to the centerline. The L-shaped leads are arranged on one side such that the chip mounting portions oppose each other on a plane. A lead frame and lead bonding are also disclosed.
摘要翻译：在半导体器件中，多个引线中的每一个具有通过凸块电连接到半导体芯片的芯片安装部分和支撑芯片安装部分的引线主体。从引线主体的远端到凸块的引导路径在X，Y和Z方向上弯曲，使得当从主体的主体和芯片安装部分的前端部分侧面。当从上侧观察时，引线主体和芯片安装部分基本上成直角形成L形。半导体芯片通过凸块连接到平面上引线的芯片安装部分的远端部分的上表面。成型体密封构成元件，除了与引线主体和芯片安装部分之间的连接部分分离的部分，并且包括引线主体的弯曲部分。每个引线被布置成使得芯片安装部分在纵向方向上布置在半导体器件的中心线的两侧以平行于中心线。 L形引线布置在一侧，使得芯片安装部分在平面上彼此相对。还公开了引线框架和引线接合。

6. 发明授权

US6077757A Method of forming chip semiconductor devices 失效
标题翻译：形成芯片半导体器件的方法
公开(公告)号：US6077757A
公开(公告)日：2000-06-20
申请号：US20789
申请日：1998-02-09
申请人： Hideki Mizuno , Kazunao Tokunaga
发明人： Hideki Mizuno , Kazunao Tokunaga
IPC分类号： H01L21/56 , H01L21/60 , H01L23/31 , H01L21/46
CPC分类号： H01L21/56 , H01L23/3107 , H01L24/11 , H01L24/97 , H01L2224/05571 , H01L2224/05573 , H01L2224/13099 , H01L2224/451 , H01L2224/48091 , H01L2224/48227 , H01L2224/97 , H01L24/45 , H01L24/48 , H01L2924/00014 , H01L2924/01005 , H01L2924/01006 , H01L2924/01033 , H01L2924/01078 , H01L2924/01082 , H01L2924/014 , H01L2924/07802 , H01L2924/10329 , H01L2924/19043
摘要： A method of fabricating a chip semiconductor device includes steps in which electrically conductive bumps are provided on electrodes of semiconductor elements on a wafer, an insulating substrate having an electrode pattern is combined onto the wafer so that the electrode pattern is made into contact with the bumps, only the wafer on which the semiconductor elements are provided is divided by grooves into a plurality of chips each of which has a semiconductor element, a liquid resin is flowed into the grooves and onto the chips for subsequent curing the resin, and the cured resin and the insulating substrate are concurrently cut along the grooves so that a plurality of semiconductor devices are formed.
摘要翻译：制造芯片半导体器件的方法包括以下步骤：在晶片上的半导体元件的电极上设置导电凸块，将具有电极图案的绝缘衬底组合到晶片上，使得电极图案与凸块接触只有其上设置有半导体元件的晶片被槽划分成多个芯片，每个芯片具有半导体元件，液体树脂流入沟槽和芯片上以便随后固化树脂，并且固化树脂并且沿着沟槽同时切割绝缘基板，从而形成多个半导体器件。

7. 发明申请

US20100300622A1 CIRCULAR RING-SHAPED MEMBER FOR PLASMA PROCESS AND PLASMA PROCESSING APPARATUS 审中-公开
标题翻译：用于等离子体处理和等离子体处理装置的圆形环形构件
公开(公告)号：US20100300622A1
公开(公告)日：2010-12-02
申请号：US12788396
申请日：2010-05-27
申请人： Koichi Yatsuda , Hideki Mizuno
发明人： Koichi Yatsuda , Hideki Mizuno
IPC分类号： C23F1/08
CPC分类号： H01J37/32642 , H01J37/32091
摘要： A plasma processing apparatus includes a processing chamber the inside of which is maintained in a vacuum; a mounting table configured to mount a target substrate and serve as a lower electrode in the processing chamber; a circular ring-shaped member provided at the mounting table so as to surround a peripheral portion of the target substrate; an upper electrode arranged to face the lower electrode thereabove; and a power feed unit for supplying a high frequency power to the mounting table. The apparatus performs a plasma process on the target substrate by plasma generated in the processing chamber. The circular ring-shaped member includes at least one ring-shaped groove configured to adjust an electric field distribution to a desired distribution in a plasma generation space, and the groove is formed in a surface of the circular ring-shaped member and the surface is on an opposite side to the plasma generation space.
摘要翻译：等离子体处理装置包括处理室，其内部保持在真空中; 安装台，被配置为安装目标基板并用作处理室中的下电极; 设置在所述安装台上以围绕所述目标基板的周边部分的圆形环状部件; 上电极，其布置成面向其上方的下电极; 以及用于向安装台提供高频电力的供电单元。该装置通过处理室中产生的等离子体对目标衬底进行等离子体处理。圆形环状构件包括至少一个环形槽，其构造成将等离子体产生空间中的电场分布调节到期望的分布，并且所述凹槽形成在圆形环形构件的表面中，并且表面是在等离子体产生空间的相对侧。

8. 发明申请

US20070284863A1 Airbag module with integrated gas generation 有权
标题翻译：安全气囊模块，集气体发生
公开(公告)号：US20070284863A1
公开(公告)日：2007-12-13
申请号：US11802101
申请日：2007-05-18
申请人： William Bostick , James Karlow , Dave McCormick , Barney Bauer , Henk Helleman , Simin Zeng , Daqing Zhang , Hideki Mizuno
发明人： William Bostick , James Karlow , Dave McCormick , Barney Bauer , Henk Helleman , Simin Zeng , Daqing Zhang , Hideki Mizuno
IPC分类号： B60R21/26 , B60R21/217
CPC分类号： B60R21/26 , B60R21/217
摘要： An airbag module integrates the components required for gas generation, thereby eliminating the need for a separate inflation component. The airbag module can comprise a cover with a pocket, a gas generant container, an inflatable cushion an upper and lower retainer housing, and an inflation gas generation system in fluid communication with the cushion. The airbag module does not comprise a discrete inflator that is functional outside the assembled airbag module. The gas generant container houses a package of solid gas generating compound. The energetic materials of the propellant do not become functional as a gas generation source until the cover is secured to the lower retainer housing.
摘要翻译：安全气囊模块集成了气体产生所需的组件，从而不需要单独的充气部件。气囊模块可以包括具有口袋的盖，气体发生器容器，可膨胀衬垫，上部和下部保持器壳体，以及与衬垫流体连通的充气气体产生系统。气囊模块不包括在组装的气囊模块外部起作用的离散式充气机。气体发生器容器容纳一整套固体气体发生剂。推进剂的高能材料在将盖固定到下保持器壳体之前，不会作为气体发生源起作用。

9. 发明授权

US06576178B2 Resin sealing apparatus and resin sealing method 失效
标题翻译：树脂密封装置和树脂密封方法
公开(公告)号：US06576178B2
公开(公告)日：2003-06-10
申请号：US09740956
申请日：2000-12-21
申请人： Hideki Mizuno , Kiyomitsu Ishimura
发明人： Hideki Mizuno , Kiyomitsu Ishimura
IPC分类号： B29C4514
CPC分类号： H01L21/56 , B29C41/12 , B29C41/20 , B29L2031/3061 , H01L2224/48091 , H01L2224/48227 , H01L2924/00014
摘要： An apparatus for sealing a resin uses a liquid resin. A substrate has a frame for surrounding the substrate and is provided with a plurality of semiconductor devices. The substrate has a first opening portion. A squeegee guide plate is placed on the frame and has a second opening portion. The second opening portion is larger than first opening portion in size. A first squeegee moves along the squeegee guide plate in a first direction and rakes the liquid resin. The liquid resin is protuberated in order to bury the semiconductor devices. A second squeegee moves along the squeegee guide plate in a second direction opposite to the first direction and further rakes the liquid resin so as to smooth a surface of the liquid resin. A turning mechanism serves to turn the second squeegee in a circular arc form during the movement of the second squeegee.
摘要翻译：用于密封树脂的设备使用液体树脂。衬底具有用于围绕衬底的框架并且设置有多个半导体器件。基板具有第一开口部。刮板导板被放置在框架上并具有第二开口部分。第二开口部的尺寸大于第一开口部。第一刮板沿第一方向沿刮板导板移动，并且耙液体树脂。为了埋入半导体器件，突出了液体树脂。第二刮板沿着与第一方向相反的第二方向沿着刮板导向板移动，并进一步耙液体树脂以使液体树脂的表面光滑。转动机构用于在第二刮板运动期间将第二刮板转动成圆弧形。

10. 发明申请

US20110057429A1 Gas generating system and composition 审中-公开
标题翻译：气体发生系统及组成
公开(公告)号：US20110057429A1
公开(公告)日：2011-03-10
申请号：US12924521
申请日：2010-09-29
申请人： Deborah L. Hordos , Paresh S. Khandhadia , Hideki Mizuno
发明人： Deborah L. Hordos , Paresh S. Khandhadia , Hideki Mizuno
IPC分类号： B60R21/264 , C06B29/00 , C06B31/08 , C06D5/00
CPC分类号： C06D5/06 , C06C9/00
摘要： A gas generating system devoid of a booster chamber. The inflator includes a composition having a metal chlorate as a first oxidizer, a primary fuel selected from carboxylic acids, dicarboxylic acids, and mixtures thereof, and a second oxidizer not having perchlorate character. The metal chlorate is provided at about 10-20 wt %, the primary fuel is provided at about 15-45 wt %, and the second oxidizer is provided at about 30-50 wt % stated by weight of the total composition.
摘要翻译：没有增压室的气体发生系统。充气机包括具有金属氯酸盐作为第一氧化剂的组合物，选自羧酸，二羧酸及其混合物的主要燃料和不具有高氯酸盐特性的第二氧化剂。提供约10-20重量％的金属氯酸盐，主要燃料以约15-45重量％提供，第二氧化剂提供为总组合物重量约30-50重量％。

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