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    • 4. 发明授权
    • Method for measuring lifetime of semiconductor material and apparatus
therefor
    • 半导体材料寿命测定方法及其设备
    • US5081414A
    • 1992-01-14
    • US475768
    • 1990-02-05
    • Tateo KusamaKunio Iba
    • Tateo KusamaKunio Iba
    • G01R31/265
    • G01R31/2656
    • A method and apparatus measure the lifetime of a semiconductor material by directing microwave energy into the semiconductor material and by producing carriers within the semiconductor material by impinging light thereon. A non-metal material is interposed between the semiconductor material and a metallic surface, such that a portion of the microwave energy travels through the semiconductor material and the non-metal material and reflects off of the metallic surface and back through the non-metal material and the semiconductor material. Additionally, a heating member is provided for heating the semiconductor material, whereby the lifetime of the semiconductor material is determined according to characteristics of the reflected microwave energy and the temperature of the semiconductor material.
    • 一种方法和装置通过将微波能量引入半导体材料中并通过在半导体材料内照射其上的光来制造载流子来测量半导体材料的寿命。 非金属材料插入在半导体材料和金属表面之间,使得微波能量的一部分穿过半导体材料和非金属材料并从金属表面反射并穿过非金属材料 和半导体材料。 此外,为了加热半导体材料而设置加热构件,由此根据反射的微波能量的特性和半导体材料的温度来确定半导体材料的寿命。