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    • 9. 发明授权
    • Method of preparing a sample for transmission electron microscopy
    • 制备透射电子显微镜样品的方法
    • US07649173B2
    • 2010-01-19
    • US11618728
    • 2006-12-29
    • Jianqiang HuZhixian RuiYanli ZhaoYanjun WangMing LiMin Pan
    • Jianqiang HuZhixian RuiYanli ZhaoYanjun WangMing LiMin Pan
    • G01N23/00G21K7/00
    • G01N1/32
    • A method for preparing TEM sample, comprising the following steps: providing a sample with two pits and a failure region between the two pits, the failure region comprising a semiconductor device; milling the first surface of the failure region, till the cross section of the semiconductor device is exposed; etching the first surface of the failure region; cleaning the sample; milling the second surface of the failure region, till the failure region can be passed by electron beam. A sample can be prepared for a high resolution TEM through above steps. When the sample is observed, it is easy to distinguish the lightly doped drain, source/drain regions from the silicon substrate and observe the pattern and defects in the lightly doped drain, source/drain regions clearly; in addition, it is easy to distinguish the BPSG from the non-doped silicon dioxide in the failure region.
    • 一种制备TEM样品的方法,包括以下步骤:提供具有两个凹坑的样品和两个凹坑之间的失效区域,所述失效区域包括半导体器件; 铣削故障区域的第一表面,直到半导体器件的横截面露出; 蚀刻失效区域的第一表面; 清洗样品; 铣削失效区域的第二表面,直到失效区域可以通过电子束。 可以通过上述步骤制备用于高分辨率TEM的样品。 当观察样品时,很容易区分轻掺杂漏极,源极/漏极区域与硅衬底,并清楚地观察到轻掺杂漏极,源极/漏极区域中的图案和缺陷; 此外,在故障区域中容易区分BPSG和非掺杂二氧化硅。