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    • 7. 发明授权
    • Adaptive programming method and apparatus for flash memory analog storage
    • 闪存模拟存储的自适应编程方法和装置
    • US06301151B1
    • 2001-10-09
    • US09634180
    • 2000-08-09
    • Lawrence D. EnghAlbert V. KordeschPing GuoChun-Mai Liu
    • Lawrence D. EnghAlbert V. KordeschPing GuoChun-Mai Liu
    • G11C700
    • G11C16/12G11C27/005
    • Adaptive programming method and apparatus for flash memory analog storage. The present invention method is to adjust the voltage of the programming pulse each time based on the result of the previous pulse. The expected change in the programmed value is compared to the measured change, and the difference used to improve the model of that cell after each programming pulse. The algorithm is “adaptive” because the voltage of each pulse is adapted to whatever the cell needs. If the cell is programming too slowly, the voltage is increased dramatically to make it faster. Conversely if the results show that a particular cell is programming too fast, the next voltage pulse is increased by only a small amount (or even decreased if necessary). Because the response of the cell is non-linear, a special analog circuit is used to calculate the optimum voltage for each pulse. As one alternative, a digital calculation may also be used to program the cells. Because of the programming speed of the exemplary method, a voice signal may be sampled and stored in flash memory one cell at a time. Variable programming parameters other than voltage may be used if desired.
    • 闪存模拟存储的自适应编程方法和装置。 本发明的方法是基于先前脉冲的结果每次调节编程脉冲的电压。 将编程值的预期变化与测量的变化进行比较,以及用于在每个编程脉冲之后改善该单元的模型的差异。 该算法是“自适应”的,因为每个脉冲的电压适应于任何单元需要。 如果电池的编程速度太慢,电压会急剧增加,使其更快。 相反,如果结果显示特定的单元格编程速度太快,则下一个电压脉冲仅增加少量(或者如果需要甚至减小)。 由于单元的响应是非线性的,所以使用特殊的模拟电路来计算每个脉冲的最佳电压。 作为一种替代方案,也可以使用数字计算来对单元进行编程。 由于示例性方法的编程速度,一次可以将语音信号采样并存储在闪存中一个单元。 如果需要,可以使用电压以外的可变编程参数。