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1. 发明专利

JP2013258337A Semiconductor optical integrated element 有权
标题翻译：半导体光学集成元件
公开(公告)号：JP2013258337A
公开(公告)日：2013-12-26
申请号：JP2012134253
申请日：2012-06-13
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： KOBAYASHI WATARU , YAMANAKA TAKAYUKI , KAMITOKU MASAKI , SHIBATA YASUO
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical integrated element which achieves simpler control and downsizing of an element compared with a semiconductor optical integrated element in the past to achieve SMF 80 km transmission over a whole area of a C band.SOLUTION: A semiconductor optical integrated element comprises a laser part having a wavelength variable function, an EA modulator and an SOA which are monolithic integrated on the same substrate. The laser part, the EA modulator and the SOA are integrated in this order with respect to an optical waveguide direction. A length of the SOA is not less than 50 μm and not more than 150 μm.
摘要翻译：要解决的问题：提供一种半导体光学集成元件，其与过去的半导体光学集成元件相比实现了更简单的元件的控制和小型化，以在C波段的整个区域上实现SMF 80km的传输。解决方案：半导体光学集成元件包括具有波长可变功能的激光器部件，EA调制器和SOA，其整体集成在同一基板上。激光器部件，EA调制器和SOA相对于光波导方向以该顺序集成。 SOA的长度不小于50μm且不大于150μm。

2. 发明专利

JP2013258336A Semiconductor optical integrated element 有权
标题翻译：半导体光学集成元件
公开(公告)号：JP2013258336A
公开(公告)日：2013-12-26
申请号：JP2012134252
申请日：2012-06-13
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： KOBAYASHI WATARU , YAMANAKA TAKAYUKI , KAMITOKU MASAKI , SHIBATA YASUO
IPC分类号： H01S5/026 , H01S5/125
摘要： PROBLEM TO BE SOLVED: To provide a semiconductor optical integrated element and an optical transmitter module mounting the same, which generate an optical signal having an optical waveform capable of long-distance transmission and which can inhibit loss in light intensity without increasing the number of control terminals and power consumption in comparison with an EA-DFB laser of the past.SOLUTION: A semiconductor optical integrated element according to the present embodiment comprises a DFB laser, an EA modulator and an SOA which are monolithic integrated on the same substrate. The DFB laser, the EA modulator and the SOA are integrated in this order with respect to an optical waveguide direction. And the DFB laser and the SOA are current injected by the same control terminal.
摘要翻译：要解决的问题：提供一种半导体光学集成元件和安装该光学元件的光发射模块，其产生具有能够进行长距离传输的光波形的光信号，并且可以抑制光强度的损失而不增加控制次数端子和功耗与过去的EA-DFB激光器相比。本发明的半导体光学集成元件包括DFB激光器，EA调制器和SOA，它们整体集成在同一衬底上。 DFB激光器，EA调制器和SOA相对于光波导方向以该顺序集成。 DFB激光器和SOA由同一个控制端子电流注入。

3. 发明专利

JP2004271744A Absorption type semiconductor optical modulator 审中-公开
公开(公告)号：JP2004271744A
公开(公告)日：2004-09-30
申请号：JP2003060488
申请日：2003-03-06
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： YAMANAKA TAKAYUKI , FUKANO HIDEKI , SAITO TADASHI , HIRONO TAKUO
IPC分类号： G02F1/017
摘要： PROBLEM TO BE SOLVED: To provide an absorption type semiconductor optical modulator capable of effectively removing a microwave loss which has been a factor to obstruct high speed operation. SOLUTION: The absorption type semiconductor optical modulator is provided with a semiconductor core 23 having an absorption edge wavelength shorter than the wavelength of an optical signal and electrodes 3A and 3B for applying voltage for making the semiconductor core 23 absorb the optical signal by moving the absorption edge wavelength of the semiconductor core to a longer wavelength side when voltage is applied. A semiconductor p-clad layer 25 existing at an upper part of the semiconductor core 23 and having p-type conductivity consists of a multilayered structure wherein a plurality of layers 251, 252 and 253 having doping concentrations different from each other are layered. In the doping concentration distribution in the multilayered structure, the p-clad layer 252 of the center part has a doping concentration lower than the doping concentrations of the p-clad layers 251 and 253 on the outer sides and ≤1×10 17 cm -3 doping concentration. COPYRIGHT: (C)2004,JPO&NCIPI

4. 发明专利

JP2012256712A Semiconductor optical device 审中-公开
标题翻译：半导体光学器件
公开(公告)号：JP2012256712A
公开(公告)日：2012-12-27
申请号：JP2011128818
申请日：2011-06-09
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： AKAGE YUICHI , KAMITOKU MASAKI , YAMANAKA TAKAYUKI
IPC分类号： H01S5/042 , H01S5/227
摘要： PROBLEM TO BE SOLVED: To enhance the characteristics of a laser active layer or a light absorption layer in a ridge type semiconductor device having an optical waveguide of mesa stripe structure.SOLUTION: A stress applied to a laser active layer or a light absorption layer 24 is reduced by separating an electrode 29 provided on a mesa stripe into more than one region in the light propagation direction by means of a stress reduction slit 29-1. Furthermore, stress is especially reduced near the end of the mesa stripe where the stress is concentrated, by reducing the size of the separation region near the end of the mesa stripe of the electrode 29, as required.
摘要翻译：要解决的问题：提高具有台面条状结构的光波导的脊型半导体器件中的激光器活性层或光吸收层的特性。解决方案：通过应力减小狭缝29分离将设置在台面条上的电极29沿光传播方向分离成不止一个区域来施加到激光有源层或光吸收层24上的应力。 1。此外，根据需要，通过减小靠近电极29的台面条的端部的分离区域的尺寸，在应力集中的台面条的端部附近的应力特别地降低。版权所有（C）2013，JPO＆INPIT

5. 发明专利

JP2011155157A Optical semiconductor device and method of controlling the same 审中-公开
标题翻译：光学半导体器件及其控制方法
公开(公告)号：JP2011155157A
公开(公告)日：2011-08-11
申请号：JP2010016110
申请日：2010-01-28
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： FUJISAWA TAKESHI , YAMANAKA TAKAYUKI , KANO FUMIYOSHI , KOBAYASHI WATARU , TADOKORO TAKASHI , FUJIWARA NAOKI
IPC分类号： H01S5/026 , G02F1/017
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor that increases an extinction ratio without varying the number of well layers and a length of a modulator. SOLUTION: An optical semiconductor includes: a substrate 11 composed of a semiconductor mixed crystal; an active part 12 formed on the substrate 11 and has a multiquantum well structure including a quantum well layer and a barrier layer; and an electro-absorptive modulator composed of both upper and lower clads 13, 14, respectively, covering a top and a bottom of the active part 12. Part of the upper clad 13 is etched and a ridge waveguide structure having a ridge mesa part 15 having a width of about light wavelength is manufactured, and an embedding part 16 with the both sides of the ridge mesa part 15 embedded by an organic material having small thermal conductivity is provided. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种在不改变阱层的数量和调制器的长度的情况下增加消光比的光学半导体。解决方案：光半导体包括：由半导体混晶构成的衬底11; 形成在基板11上并具有包括量子阱层和势垒层的多量子阱结构的有源部分12; 以及分别由覆盖有源部分12的顶部和底部的上部和下部包层13,14组成的电吸收调制器。蚀刻上部包层13的一部分，并且具有脊台面部分15的脊形波导结构制造出具有约光波长的宽度，并且提供了具有由导热性差的有机材料嵌入的脊台面部分15的两侧的嵌入部分16。版权所有（C）2011，JPO＆INPIT

6. 发明专利

JP2011108938A To-can type tosa module 有权
标题翻译： TO-CAN类型TOSA模块
公开(公告)号：JP2011108938A
公开(公告)日：2011-06-02
申请号：JP2009264159
申请日：2009-11-19
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： AKAGE YUICHI , YAMANAKA TAKAYUKI
IPC分类号： H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a TO-CAN (Transistor Outlined Can) type TOSA (Transmitter Optical Sub-Assembly) module that does not generate abrupt variation in line width of a high-frequency signal when an optical semiconductor element as a compact component and a wide high-frequency line are connected to each other, and suppresses loss of the high-frequency signal.
SOLUTION: The TO-CAN type TOSA module includes: a stem to which a lead terminal is fixed with a dielectric; a relay line substrate mounted on the stem and having a first signal line to be connected to the lead terminal formed; a Peltier element as a cooling element mounted on the stem; a carrier body mounted on the Peltier element; a subcarrier having a projection portion projecting from the carrier body to above the relay line substrate, and fixed to the carrier body, an optical semiconductor element being mounted at a position overlapping the carrier body and a second signal line connected to the optical semiconductor element being formed to extend to the projection portion; and a wire connecting the first and second signal lines to each other.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种TO-CAN（晶体管概述罐）型TOSA（发射机光学子组件）模块，其在光半导体元件为...时不会产生高频信号的线宽的突然变化紧凑的部件和宽的高频线路彼此连接，并且抑制高频信号的损失。解决方案：TO-CAN型TOSA模块包括：引线端子固定有电介质的杆; 安装在所述杆上并具有要连接到形成的引线端子的第一信号线的中继线基板; 作为安装在杆上的冷却元件的珀耳帖元件; 安装在珀尔帖元件上的载体; 子载波，具有从载体主体突出到中继线基板上方并固定到载体主体的突出部分，安装在与载体主体重叠的位置处的光半导体元件和连接到光半导体元件的第二信号线; 形成为延伸到所述突出部分; 以及将第一和第二信号线彼此连接的线。版权所有（C）2011，JPO＆INPIT

7. 发明专利

JP2009283801A Optical semiconductor device 审中-公开
标题翻译：光学半导体器件
公开(公告)号：JP2009283801A
公开(公告)日：2009-12-03
申请号：JP2008136209
申请日：2008-05-26
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： FUJISAWA TAKESHI , YAMANAKA TAKAYUKI , YASAKA HIROSHI , ARAI MASAKAZU
IPC分类号： H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device having high-quality quantum well layer (active layer) crystal, exhibiting good high-temperature operating characteristics.
SOLUTION: The optical semiconductor device includes a substrate 1 where a metamorphic buffer layer of InGaAs is formed on an InGaAs substrate or a GaAs substrate, a lower cladding layer 5 formed on the substrate where the metamorphic buffer layer is grown, a single-layer or multiple-layer quantum well structure 7 formed on the lower cladding layer and consisting of a barrier layer and a quantum well layer 2 of GaInNAs, and an upper cladding layer 6 formed on the quantum well structure 7.
COPYRIGHT: (C)2010,JPO&INPIT
摘要翻译：要解决的问题：提供具有高质量量子阱层（有源层）晶体的光半导体器件，具有良好的高温工作特性。解决方案：光学半导体器件包括在InGaAs衬底或GaAs衬底上形成InGaAs的变质缓冲层的衬底1，形成在变质缓冲层生长的衬底上的下覆盖层5，单个形成在下包层上并由GaInNA的势垒层和量子阱层2构成的层或多层量子阱结构7以及形成在量子阱结构7上的上包层6。（C）2010，JPO＆INPIT

8. 发明专利

JP2006203099A Optical integrated device 有权
标题翻译：光学集成器件
公开(公告)号：JP2006203099A
公开(公告)日：2006-08-03
申请号：JP2005015114
申请日：2005-01-24
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： FUKANO HIDEKI , YAMANAKA TAKAYUKI , AKAGE YUICHI
IPC分类号： H01S5/026
摘要： PROBLEM TO BE SOLVED: To provide an optical integrated device for reducing power consumption accompanied with an operation. SOLUTION: A light modulator 10 and a DFB laser 20 are electrically connected in parallel, and the rays of light outgoing from the DFB laser 20 are inputted to the light modulator 10 as incident rays of light Pin, and light-modulated outgoing rays of light Pout are outputted from the light modulator 10. A modulated electric signal Vd' is inputted to not only the light modulator 10 but also the DFB laser 20 so that the incident rays of light Pin can be light-modulated, and that the insufficiently modulated rays of light are light-modulated by the light modulator 10. Thus, it is possible to reduce the amplitude (voltage value) of the modulated electric signal Vd', and to reduce power consumption. COPYRIGHT: (C)2006,JPO&NCIPI
摘要翻译：要解决的问题：提供一种用于降低伴随操作的功耗的光学集成装置。解决方案：光调制器10和DFB激光器20并联电连接，并且从DFB激光器20射出的光线作为入射光线Pin被输入到光调制器10，并且光调制输出光Pout从光调制器10输出。调制电信号Vd'不仅输入到光调制器10而且还输入到DFB激光器20，使得入射光Pin可以被调制，并且由光调制器10对调制好的光线进行了光调制。因此，能够降低调制电信号Vd'的振幅（电压值），降低功耗。版权所有（C）2006，JPO＆NCIPI

9. 发明专利

JP2013165288A Optical semiconductor device 审中-公开
标题翻译：光学半导体器件
公开(公告)号：JP2013165288A
公开(公告)日：2013-08-22
申请号：JP2013088046
申请日：2013-04-19
申请人： Nippon Telegr & Teleph Corp , 日本電信電話株式会社
发明人： FUJISAWA TAKESHI , YAMANAKA TAKAYUKI , KANO FUMIYOSHI , FUJIWARA NAOKI , KOBAYASHI WATARU , ARAI MASAKAZU
IPC分类号： H01S5/026 , G02F1/017 , H01S5/343
摘要： PROBLEM TO BE SOLVED: To provide an optical semiconductor device which can improve performances of an active layer of a semiconductor laser part and an electroabsorption optical modulator part by increasing ΔE; and which can be used as a high-speed modulator integrated light source for telecommunication and data communication within a range of 25-85°C by improving performances of the modulator to a large extent by using appropriate active layer parameters.SOLUTION: In an optical semiconductor device in which a semiconductor laser part 10, an electroabsorption optical modulator part 30 and a passive layer 20 are formed on a substrate 1, a mixed crystal semiconductor of the substrate is InP; a quantum well layer and a barrier layer of an active part of the semiconductor laser part are InAlGaAs and a diffraction grating formation layer of the active part is InGaAsP; a quantum well layer and a barrier layer of an active part of an electroabsorption optical modulator part are InAlGaAs; the number of quantum wells is 2-20; a strain amount of the quantum well layer is larger than 0% and not more than 1% (plus represents a tensile strain); and a bandgap wavelength of the barrier layer is 0.9-1.05 μm.
摘要翻译：要解决的问题：提供一种光学半导体器件，其可以通过增加Dgr; E来提高半导体激光器部分的有源层和电吸收光学调制器部件的性能; 并且可以通过使用适当的有源层参数在很大程度上通过改进调制器的性能，将其用作25-85℃范围内的通信和数据通信的高速调制器集成光源。解决方案：在光学在基板1上形成有半导体激光部10，电吸收光调制部30和无源层20的半导体装置，基板的混晶半导体为InP; 半导体激光器部分的有源部分的量子阱层和阻挡层是InAlGaAs，有源部分的衍射光栅形成层是InGaAsP; 电吸收光调制器部分的有源部分的量子阱层和阻挡层是InAlGaAs; 量子阱的数量为2-20; 量子阱层的应变量大于0％且不大于1％（加上表示拉伸应变）; 并且阻挡层的带隙波长为0.9-1.05μm。

10. 发明专利

JP2011100785A To-can optical module and package for use of to-can optical module 审中-公开
标题翻译： TO-CAN光模块和使用TO-CAN光模块的封装
公开(公告)号：JP2011100785A
公开(公告)日：2011-05-19
申请号：JP2009253270
申请日：2009-11-04
申请人： Nippon Telegr & Teleph Corp , Ntt Electornics Corp , Nttエレクトロニクス株式会社 , 日本電信電話株式会社
发明人： AKAGE YUICHI , YAMANAKA TAKAYUKI , YOSHIDA KAZUMASA , SANJO HIROAKI , KATO TETSUO
IPC分类号： H01S5/022
摘要： PROBLEM TO BE SOLVED: To provide a TO-CAN optical module package capable of improving heat dissipation characteristics while keeping high frequency characteristics and mechanical strength of the TO-CAN optical module package, and the TO-CAN optical module using the TO-CAN optical module package.
SOLUTION: The TO-CAN optical module package 200 includes a stem 30 having a mounting surface for mounting an optical semiconductor device and having a through-hole passing through the mounting surface, a feedthrough 20 serving as a dielectric medium to be inserted into the hole, and a plurality of wiring terminals 2 passing through the feedthrough 20. At least part of a side of the stem 30 is a flat surface in the TO-CAN optical module package 200. The TO-CAN optical module using the TO-CAN optical module package 200 is also disclosed.
COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题：提供一种能够在保持TO-CAN光模块封装的高频特性和机械强度的同时提高散热特性的TO-CAN光模块封装，以及TO-CAN光模块使用TO -CAN光模块封装。解决方案：TO-CAN光模块封装200包括具有用于安装光学半导体器件并具有通过安装表面的通孔的安装表面的杆30，用作要插入的电介质的馈通20 穿过馈通线20的多个接线端子2.杆30的至少一部分侧面是TO-CAN光学模块封装200中的平坦表面。TO-CAN光模块使用TO -CAN光学模块封装200也被公开。版权所有（C）2011，JPO＆INPIT

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