专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20100330394A1 CCP-CPP MAGNETORESISTIVE READER WITH HIGH GMR VALUE 有权
标题翻译：具有高GMR值的CCP-CPP磁电读取器
公开(公告)号：US20100330394A1
公开(公告)日：2010-12-30
申请号：US12491936
申请日：2009-06-25
申请人： Qing He , Yonghua Chen , Juren Ding
发明人： Qing He , Yonghua Chen , Juren Ding
IPC分类号： G11B5/39 , B05D5/12 , C23C14/34
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B2005/3996 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetoresistive device having a high giant magnetoresistance (GMR) value and a moderate low resistance area product (RA) includes a first magnetic layer, a second magnetic layer, and a current confined path (CCP) spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer includes copper current confined paths extending between the first magnetic layer and the second magnetic layer in a matrix of magnesium oxide. The spacer layer is formed by a mixture copper and magnesium oxide, which is heattreated to form the copper current confined paths within the magnesium oxide matrix.
摘要翻译：具有高巨磁阻（GMR）值和中等低电阻面积乘积（RA）的磁阻器件包括位于第一磁性层和第一磁阻层之间的第一磁性层，第二磁性层和电流限制路径（CCP）第二磁性层。间隔层包括在氧化镁基质中在第一磁性层和第二磁性层之间延伸的铜电流限制路径。间隔层由铜和氧化镁混合物形成，其被热处理以在氧化镁基质内形成铜电流限制路径。

2. 发明授权

US08675319B2 Data reader with heusler alloy reference lamination 有权
标题翻译：数据读取器与heusler合金参考层压
公开(公告)号：US08675319B2
公开(公告)日：2014-03-18
申请号：US13556983
申请日：2012-07-24
申请人： Qing He , Konstantin Nikolaev , Hao Meng , Yonghua Chen , Juren Ding
发明人： Qing He , Konstantin Nikolaev , Hao Meng , Yonghua Chen , Juren Ding
IPC分类号： G11B5/39
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , H01L43/10
摘要： In some embodiments, a current perpendicular to the plane giant magneto-resistance (CPP GMR) read sensor may include a reference layer and/or a free layer that includes a plurality of sub-layers. For example, at least one of the reference layer or free layer may include a first ferromagnetic sub-layer, a second ferromagnetic sub-layer, and a Heusler alloy layer located between the first ferromagnetic sub-layer and the second ferromagnetic sub-layer. In some embodiments, a CPP GMR read sensor may include a current closed path (CCP) spacer layer between the reference layer and the free layer. The CCP spacer layer may include Ag and Al2O3. In further embodiments, a CPP GMR read sensor may include a Heusler alloy free layer, a Heusler alloy reference layer, and a CCP spacer layer.
摘要翻译：在一些实施例中，垂直于平面巨磁阻（CPP GMR）读取传感器的电流可以包括参考层和/或包括多个子层的自由层。例如，参考层或自由层中的至少一个可以包括位于第一铁磁子层和第二铁磁子层之间的第一铁磁子层，第二铁磁子层和Heusler合金层。在一些实施例中，CPP GMR读取传感器可以包括参考层和自由层之间的当前封闭路径（CCP）间隔层。 CCP间隔层可以包括Ag和Al 2 O 3。在另外的实施例中，CPP GMR读取传感器可以包括Heusler合金自由层，Heusler合金参考层和CCP间隔层。

3. 发明申请

US20120295131A1 Current Perpendicular to the Plane Reader with Giant Magneto-Resistance 有权
标题翻译：与具有巨磁阻的平面读取器垂直的电流
公开(公告)号：US20120295131A1
公开(公告)日：2012-11-22
申请号：US13556983
申请日：2012-07-24
申请人： Qing He , Konstantin Nikolaev , Hao Meng , Yonghua Chen , Juren Ding
发明人： Qing He , Konstantin Nikolaev , Hao Meng , Yonghua Chen , Juren Ding
IPC分类号： G11B5/39
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , H01L43/10
摘要： In some embodiments, a current perpendicular to the plane giant magneto-resistance (CPP GMR) read sensor may include a reference layer and/or a free layer that includes a plurality of sub-layers. For example, at least one of the reference layer or free layer may include a first ferromagnetic sub-layer, a second ferromagnetic sub-layer, and a Heusler alloy layer located between the first ferromagnetic sub-layer and the second ferromagnetic sub-layer. In some embodiments, a CPP GMR read sensor may include a current closed path (CCP) spacer layer between the reference layer and the free layer. The CCP spacer layer may include Ag and Al2O3. In further embodiments, a CPP GMR read sensor may include a Heusler alloy free layer, a Heusler alloy reference layer, and a CCP spacer layer.
摘要翻译：在一些实施例中，垂直于平面巨磁阻（CPP GMR）读取传感器的电流可以包括参考层和/或包括多个子层的自由层。例如，参考层或自由层中的至少一个可以包括位于第一铁磁子层和第二铁磁子层之间的第一铁磁子层，第二铁磁子层和Heusler合金层。在一些实施例中，CPP GMR读取传感器可以包括参考层和自由层之间的当前封闭路径（CCP）间隔层。 CCP间隔层可以包括Ag和Al 2 O 3。在另外的实施例中，CPP GMR读取传感器可以包括Heusler合金自由层，Heusler合金参考层和CCP间隔层。

4. 发明申请

US20110200845A1 CURRENT PERPENDICULAR TO THE PLANE READER WITH IMPROVED GIANT MAGNETO-RESISTANCE 审中-公开
标题翻译：具有改进的巨大磁阻的平面读取器的当前流行度
公开(公告)号：US20110200845A1
公开(公告)日：2011-08-18
申请号：US12706644
申请日：2010-02-16
申请人： Qing He , Konstantin Nikolaev , Hao Meng , Yonghua Chen , Juren Ding
发明人： Qing He , Konstantin Nikolaev , Hao Meng , Yonghua Chen , Juren Ding
IPC分类号： G11B5/39
CPC分类号： G11B5/3983 , B82Y25/00 , G01R33/093 , G11B5/3906 , G11B5/398 , H01L43/10
摘要： In some embodiments, a current perpendicular to the plane giant magneto-resistance (CPP GMR) read sensor may include a reference layer and/or a free layer that includes a plurality of sub-layers. For example, at least one of the reference layer or free layer may include a first ferromagnetic sub-layer, a second ferromagnetic sub-layer, and a Heusler alloy layer located between the first ferromagnetic sub-layer and the second ferromagnetic sub-layer. In some embodiments, a CPP GMR read sensor may include a current closed path (CCP) spacer layer between the reference layer and the free layer. The CCP spacer layer may include Ag and Al2O3. In further embodiments, a CPP GMR read sensor may include a Heusler alloy free layer, a Heusler alloy reference layer, and a CCP spacer layer.
摘要翻译：在一些实施例中，垂直于平面巨磁阻（CPP GMR）读取传感器的电流可以包括参考层和/或包括多个子层的自由层。例如，参考层或自由层中的至少一个可以包括位于第一铁磁子层和第二铁磁子层之间的第一铁磁子层，第二铁磁子层和Heusler合金层。在一些实施例中，CPP GMR读取传感器可以包括参考层和自由层之间的当前封闭路径（CCP）间隔层。 CCP间隔层可以包括Ag和Al 2 O 3。在另外的实施例中，CPP GMR读取传感器可以包括Heusler合金自由层，Heusler合金参考层和CCP间隔层。

5. 发明授权

US08551626B2 CCP-CPP magnetoresistive reader with high GMR value 有权
标题翻译：具有高GMR值的CCP-CPP磁阻读取器
公开(公告)号：US08551626B2
公开(公告)日：2013-10-08
申请号：US12491936
申请日：2009-06-25
申请人： Qing He , Yonghua Chen , Juren Ding
发明人： Qing He , Yonghua Chen , Juren Ding
IPC分类号： G11B5/39
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/3906 , G11B2005/3996 , H01L43/08 , H01L43/10 , H01L43/12
摘要： A magnetoresistive device having a high giant magnetoresistance (GMR) value and a moderate low resistance area product (RA) includes a first magnetic layer, a second magnetic layer, and a current confined path (CCP) spacer layer positioned between the first magnetic layer and the second magnetic layer. The spacer layer includes copper current confined paths extending between the first magnetic layer and the second magnetic layer in a matrix of magnesium oxide. The spacer layer is formed by a mixture copper and magnesium oxide, which is heattreated to form the copper current confined paths within the magnesium oxide matrix.
摘要翻译：具有高巨磁阻（GMR）值和中等低电阻面积乘积（RA）的磁阻器件包括位于第一磁性层和第一磁阻层之间的第一磁性层，第二磁性层和电流限制路径（CCP）第二磁性层。间隔层包括在氧化镁基质中在第一磁性层和第二磁性层之间延伸的铜电流限制路径。间隔层由铜和氧化镁混合物形成，其被热处理以在氧化镁基质内形成铜电流限制路径。

6. 发明授权

US08318030B2 Magnetic device definition with uniform biasing control 有权
标题翻译：具有均匀偏置控制的磁性装置定义
公开(公告)号：US08318030B2
公开(公告)日：2012-11-27
申请号：US12502180
申请日：2009-07-13
申请人： Xilin Peng , Stacey C. Wakeham , Yifan Zhang , Zhongyan Wang , Konstantin R. Nikolaev , Mark Henry Ostrowski , Yonghua Chen , Juren Ding
发明人： Xilin Peng , Stacey C. Wakeham , Yifan Zhang , Zhongyan Wang , Konstantin R. Nikolaev , Mark Henry Ostrowski , Yonghua Chen , Juren Ding
IPC分类号： B44C1/22
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/1278 , G11B5/3932 , G11B5/3967
摘要： A method of fabricating a magnetic device is described. A mask removing layer is formed on a layered sensing stack and a hard mask layer is formed on the mask removing layer. A first reactive ion etch is performed with a non-oxygen-based chemistry to define the hard mask layer using an imaged layer formed on the hard mask layer as a mask. A second reactive ion etch is performed with an oxygen-based chemistry to define the mask removing stop layer using the defined hard mask layer as a mask. A third reactive ion etch is performed to define the layered sensing stack using the hard mask layer as a mask. The third reactive ion etch includes an etching chemistry that performs at a lower etching rate on the hard mask layer than on the layered sensing stack.
摘要翻译：描述制造磁性装置的方法。在层叠感测堆叠上形成掩模移除层，并且在掩模移除层上形成硬掩模层。使用非氧基化学法进行第一反应离子蚀刻，以使用形成在硬掩模层上的成像层作为掩模来限定硬掩模层。使用氧基化学法进行第二反应离子蚀刻，以使用限定的硬掩模层作为掩模来限定掩模去除停止层。执行第三反应离子蚀刻以使用硬掩模层作为掩模来定义分层感测堆叠。第三反应离子蚀刻包括蚀刻化学品，其在硬掩模层上的蚀刻速率低于分层感测叠层。

7. 发明申请

US20110006033A1 Magnetic Device Definition with Uniform Biasing Control 有权
标题翻译：具有均匀偏置控制的磁性装置定义
公开(公告)号：US20110006033A1
公开(公告)日：2011-01-13
申请号：US12502180
申请日：2009-07-13
申请人： Xilin Peng , Stacey Wakeham , Yifan Zhang , Zhongyan Wang , Konstantin Nikolaev , Mark Henry Ostrowski , Yonghua Chen , Juren Ding
发明人： Xilin Peng , Stacey Wakeham , Yifan Zhang , Zhongyan Wang , Konstantin Nikolaev , Mark Henry Ostrowski , Yonghua Chen , Juren Ding
IPC分类号： B44C1/22
CPC分类号： G11B5/3909 , B82Y10/00 , B82Y25/00 , G01R33/098 , G11B5/1278 , G11B5/3932 , G11B5/3967
摘要： A method of fabricating a magnetic device is described. A mask removing layer is formed on a layered sensing stack and a hard mask layer is formed on the mask removing layer. A first reactive ion etch is performed with a non-oxygen-based chemistry to define the hard mask layer using an imaged layer formed on the hard mask layer as a mask. A second reactive ion etch is performed with an oxygen-based chemistry to define the mask removing stop layer using the defined hard mask layer as a mask. A third reactive ion etch is performed to define the layered sensing stack using the hard mask layer as a mask. The third reactive ion etch includes an etching chemistry that performs at a lower etching rate on the hard mask layer than on the layered sensing stack.
摘要翻译：描述制造磁性装置的方法。在层叠感测堆叠上形成掩模移除层，并且在掩模移除层上形成硬掩模层。使用非氧基化学法进行第一反应离子蚀刻，以使用形成在硬掩模层上的成像层作为掩模来限定硬掩模层。使用氧基化学法进行第二反应离子蚀刻，以使用限定的硬掩模层作为掩模来限定掩模去除停止层。执行第三反应离子蚀刻以使用硬掩模层作为掩模来定义分层感测堆叠。第三反应离子蚀刻包括蚀刻化学品，其在硬掩模层上的蚀刻速率低于分层感测叠层。

8. 发明授权

US08664950B2 Method for measuring longitudinal bias magnetic field in a tunnel magnetoresistive sensor 有权
标题翻译：用于测量隧道磁阻传感器中的纵向偏置磁场的方法
公开(公告)号：US08664950B2
公开(公告)日：2014-03-04
申请号：US13067887
申请日：2011-07-01
申请人： Siuman Mok , Hokei Lam , Cheukwing Leung , Juren Ding , Rongkwang Ni , Wanyin Kwan , Cheukman Lui , Chiuming Lueng
发明人： Siuman Mok , Hokei Lam , Cheukwing Leung , Juren Ding , Rongkwang Ni , Wanyin Kwan , Cheukman Lui , Chiuming Lueng
IPC分类号： G01R33/12
CPC分类号： G01R33/098
摘要： A method for measuring longitudinal bias magnetic field in a tunnel magnetoresistive sensor of a magnetic head, the method includes the steps of: applying an external longitudinal time-changing magnetic field onto the tunnel magnetoresistive sensor; determining a shield saturation value of the tunnel magnetoresistive sensor under the application of the external longitudinal time-changing magnetic field; applying an external transverse time-changing magnetic field and an external longitudinal DC magnetic field onto the tunnel magnetoresistive sensor; determining a plurality of different output amplitudes under the application of the external transverse time-changing magnetic field and the application of different field strength values of the external longitudinal DC magnetic field; plotting a graph according to the different output amplitudes and the different field strength values; and determining the strength of the longitudinal bias magnetic field according to the graph and the shield saturation value.
摘要翻译：一种用于测量磁头的隧道磁阻传感器中的纵向偏置磁场的方法，所述方法包括以下步骤：将外部纵向时变磁场施加到隧道磁阻传感器上; 在外部纵向时变磁场的应用下，确定隧道磁阻传感器的屏蔽饱和度值; 将外部横向时变磁场和外部纵向直流磁场施加到隧道磁阻传感器上; 在外部横向时变磁场的应用和外部纵向直流磁场的不同场强值的应用中确定多个不同的输出幅度; 根据不同的输出幅度和不同的场强值绘制图形; 并根据曲线图和屏蔽饱和度值确定纵向偏置磁场的强度。

9. 发明授权

US08634157B2 Close loop method for measuring head SNR and media SNR 失效
标题翻译：用于测量头部SNR和介质SNR的闭环方法
公开(公告)号：US08634157B2
公开(公告)日：2014-01-21
申请号：US13067163
申请日：2011-05-12
申请人： Chiuming Lueng , Mankit Lee , Wanyin Kwan , Cheukwing Leung , Juren Ding , Rongkwang Ni
发明人： Chiuming Lueng , Mankit Lee , Wanyin Kwan , Cheukwing Leung , Juren Ding , Rongkwang Ni
IPC分类号： G11B21/12 , G11B20/10
CPC分类号： G11B5/607 , G11B19/048
摘要： A close loop method for measuring head SNR, for a storage device comprising a storage media and a head, comprising steps of: (a) loading the head on the media with a dynamic fly height; (b) measuring an initial environmental temperature value T1 and measuring the head signal signalload; (c) unloading the head; (d) adjusting a power which controls the dynamic fly height until a real-time environmental temperature value T2 is equal to the initial environmental temperature T1; (e) measuring the head noise value noiseunload, (f) calculating the head SNR with the follow equation: Head_SNR = 20 × log ⁡ ( signal load noise unload ) . The method of the present invention can obtain a fair condition between the signal and noise measurement, thereby a reliable and accurate head SNR can be obtain. The present invention also provides a close loop method for measuring media SNR.
摘要翻译：一种用于测量头部SNR的闭环方法，用于包括存储介质和头部的存储装置，包括以下步骤：（a）将所述头部以动态飞行高度装载在所述介质上; （b）测量初始环境温度值T1并测量头信号信号负载; （c）卸下头部; （d）调整控制动态飞行高度的功率，直到实时环境温度值T2等于初始环境温度T1; （e）测量头噪声值噪声负载，（f）通过以下等式计算头信噪比：Head_SNR = 20×log⁡（信号负载噪声卸载）。本发明的方法可以在信号和噪声测量之间获得公平的条件，从而可以获得可靠和准确的头信号。本发明还提供了一种用于测量介质SNR的闭环方法。

10. 发明授权

US08594967B2 Method for measuring the temperature rise induced by bias current/bias voltage in a magnetic tunnel junction 有权
标题翻译：用于测量由磁性隧道结中的偏置电流/偏置电压引起的温升的方法
公开(公告)号：US08594967B2
公开(公告)日：2013-11-26
申请号：US13064188
申请日：2011-03-09
申请人： Mankit Lee , Chiuming Lueng , Cheukwing Leung , Juren Ding , Rongkwang Ni
发明人： Mankit Lee , Chiuming Lueng , Cheukwing Leung , Juren Ding , Rongkwang Ni
IPC分类号： G01K7/00 , G01K7/36
CPC分类号： G01K13/10 , B82Y25/00 , G01K7/36 , G01K15/005 , G01K2217/00 , G01R33/007 , G01R33/098 , H01F10/3254
摘要： A method for measuring a temperature rise induced by bias current/bias voltage in a magnetic tunnel junction includes: (a) applying an external time-changing magnetic field to the magnetic tunnel junction; (b) measuring different first outer pin flip field values under different temperature values; (c) correlating the temperature values with the outer pin flip field values; (d) measuring different second outer pin flip field values under different bias current/bias voltage values; (e) correlating the different bias current/bias voltage-values with the measured different second outer pin flip field values; and (f) correlating temperature values and bias current/bias voltage values according to the results produced by (c) and (e). The method can determine what kind of TMR reader design provides more stable and reliable reading performance, especially under higher operational temperatures.
摘要翻译：用于测量由磁性隧道结中的偏置电流/偏置电压引起的温度升高的方法包括：（a）将外部时变磁场施加到磁性隧道结; （b）在不同的温度值下测量不同的第一外部引脚翻转场值; （c）将温度值与外部引脚翻转场值相关联; （d）在不同的偏置电流/偏置电压值下测量不同的第二外部引脚翻转电压值; （e）将不同的偏置电流/偏置电压值与所测量的不同的第二外部引脚翻转值相关联; 和（f）根据（c）和（e）产生的结果使温度值和偏置电流/偏置电压值相关。该方法可以确定什么样的TMR读取器设计提供更稳定可靠的读取性能，特别是在较高的工作温度下。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式