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1. 发明公开

KR20180030524A 폴리실리콘을 기계적으로 분류하기 위한 선별 플랜트용 스크린 플레이트 审中-公开
标题翻译：用于筛选多晶硅机械分选工厂的筛板
公开(公告)号：KR20180030524A
公开(公告)日：2018-03-23
申请号：KR20187001109
申请日：2016-03-15
申请人： SILTRONIC AG , WACKER CHEMIE AG
发明人： BERGMANN ANDREAS , BUSCHHARDT THOMAS , EHRENSCHWENDTNER SIMON , FRAUNHOFER CHRISTIAN
IPC分类号： B07B13/07 , B07B1/12
CPC分类号： B07B13/07 , B07B1/12
摘要： 본발명은, 폴리실리콘을기계적으로분류하기위한선별플랜트용스크린플레이트(1)로서, 폴리실리콘용공급영역(2)과, 마루(32) 및골(31)을구비하는윤곽영역(3)과, 골(31)에뒤이어마련된슬롯(41)을구비하는영역(4), 그리고도약영역(5)을포함하고, 상기슬롯(41)은도약영역(5)의방향으로그 크기가증대되는것인스크린플레이트에관한것이다.
摘要翻译：一种用于筛选机械地分选多晶硅的设备的筛板（1），包括用于多晶硅的供应区域（2），具有底板（32）和骨（31）的轮廓区域（3）具有槽41后跟谷31的区域4和在跳跃区5的方向上扩大的跳跃区5，本发明涉及一种板。

2. 发明专利

SG11201710116QA Screen Plate For Screening Plants For Mechanical Classification Of Polysilicon 未知
公开(公告)号：SG11201710116QA
公开(公告)日：2018-01-30
申请号：SG11201710116Q
申请日：2016-03-15
申请人： SILTRONIC AG , WACKER CHEMIE AG
发明人： BERGMANN ANDREAS , BUSCHHARDT THOMAS , EHRENSCHWENDTNER SIMON , FRAUNHOFER CHRISTIAN
IPC分类号： B07B1/46 , B07B1/12 , B07B13/04
摘要： Polysilicon chunks or granules are classified into size fractions using a mechanical screen having a profiled surface having peaks and valleys, and terminating in widening slots through which a polysilicon size fraction falls. The device is effective and the slots are resistant to clogging.

3. 发明专利

SG10201911360RA Screen Plate For Screening Plants For Mechanical Classification Of Polysilicon 未知
公开(公告)号：SG10201911360RA
公开(公告)日：2020-02-27
申请号：SG10201911360R
申请日：2016-03-15
申请人： SILTRONIC AG , WACKER CHEMIE AG
发明人： BERGMANN ANDREAS , BUSCHHARDT THOMAS , EHRENSCHWENDTNER SIMON , FRAUNHOFER CHRISTIAN
摘要： Polysilicon chunks or granules are classified into size fractions using a mechanical screen having a profiled surface having peaks and valleys, and terminating in widening slots through which a polysilicon size fraction falls. The device is effective and the slots are resistant to clogging.

4. 发明专利

JP2009141347A Method for performing wet chemical treatment on semiconductor wafer 有权
标题翻译：在半导体波导上进行湿化学处理的方法
公开(公告)号：JP2009141347A
公开(公告)日：2009-06-25
申请号：JP2008293975
申请日：2008-11-18
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： SCHWAB GUENTER , ZAPILKO CLEMENS , BUSCHHARDT THOMAS , FEIJOO DIEGO , SHINBARA TERUO , MORI YOSHIHIRO
IPC分类号： H01L21/304
CPC分类号： H01L21/02052 , B08B3/10 , H01L21/02057
摘要： PROBLEM TO BE SOLVED: To provide a method which is especially effective for performing wet chemical treatment on a semiconductor wafer by an improved diffusion of a composition of gas to a liquid film.
SOLUTION: The method includes steps (a) to rotate the semiconductor wafer; (b) to apply a cleaning liquid having bubbles having a diameter of 100 μm or less to the rotating semiconductor wafer to form a liquid film on the semiconductor wafer; (c) to expose the rotating semiconductor wafer into an atmosphere of gas having a reactive gas; and (d) to remove the liquid film. The improved cleaning of particles is attained by a combination of micro bubbles and cleaning chemicals for corroding a surface of silicon. The improved transfer (diffusion) of a reactive gas into the cleaning liquid makes them easy the oxidation and removal of an organic contaminant and metal containing contaminant. The protrusion of the liquid film in the center of the wafer is reduced by using the micro bubbles.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种通过改善气体组合物向液膜的扩散而对半导体晶片进行湿化学处理特别有效的方法。解决方案：该方法包括步骤（a）旋转半导体晶片; （b）向旋转的半导体晶片施加具有直径为100μm以下的气泡的清洗液，在半导体晶片上形成液膜; （c）将旋转的半导体晶片暴露于具有反应气体的气体气氛中; 和（d）去除液膜。通过微气泡和用于腐蚀硅表面的清洁化学品的组合来实现颗粒的改进的清洁。反应气体向清洗液中的改进的转移（扩散）使其易于氧化和除去有机污染物和含金属的污染物。通过使用微气泡来减少晶片中心的液膜的突起。版权所有（C）2009，JPO＆INPIT

5. 发明专利

JP2009033159A Method for polishing substrate composed of semiconductor material 有权
标题翻译：用于抛光由半导体材料组成的基板的方法
公开(公告)号：JP2009033159A
公开(公告)日：2009-02-12
申请号：JP2008184841
申请日：2008-07-16
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： SCHWANDNER JUERGEN , BUSCHHARDT THOMAS , KOPPERT ROLAND , PIETSCH GEORG
IPC分类号： H01L21/304 , B24B37/04
CPC分类号： C09G1/02 , B24B7/228 , B24B37/044 , H01L21/02024
摘要： PROBLEM TO BE SOLVED: To provide a method for polishing a substrate composed of semiconductor material allowing for expecting a remarkably low "haze" and RMS roughness value. SOLUTION: The method includes at least one polishing step of type A, by means of which the substrate is polished on a polishing pad containing an abrasive material bonded in the polishing pad, wherein a polishing agent solution is introduced between the substrate and the polishing pad during the polishing step; and at least one step of type B, by means of which the substrate is polished on a polishing pad containing an abrasive material bonded in the polishing pad, wherein a polishing agent slurry containing unbonded abrasive material introduced between the substrate and the polishing pad during the polishing step. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种用于抛光由半导体材料组成的基板的方法，其允许预期非常低的“雾度”和RMS粗糙度值。解决方案：该方法包括至少一种类型A的抛光步骤，通过该抛光步骤在衬底上研磨包含结合在抛光垫中的研磨材料的抛光垫上，其中将抛光剂溶液引入到基底和抛光步骤期间的抛光垫; 以及B型的至少一个步骤，通过该步骤将衬底抛光在包含结合在抛光垫中的研磨材料的抛光垫上，其中包含在该衬底和抛光垫之间引入的未结合磨料的抛光剂浆料抛光步骤版权所有（C）2009，JPO＆INPIT

6. 发明专利

JP2012060149A Method for polishing substrate composed of semiconductor material 有权
标题翻译：用于抛光由半导体材料组成的基板的方法
公开(公告)号：JP2012060149A
公开(公告)日：2012-03-22
申请号：JP2011248831
申请日：2011-11-14
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： SCHWANDNER JUERGEN , BUSCHHARDT THOMAS , KOPPERT ROLAND , PIETSCH GEORG
IPC分类号： H01L21/304 , B24B37/00 , B24B37/04
CPC分类号： C09G1/02 , B24B7/228 , B24B37/044 , H01L21/02024
摘要： PROBLEM TO BE SOLVED: To provide an improved method for polishing a substrate composed of semiconductor material that yields a low value concerning to micro-roughness especially.SOLUTION: A method comprises: at least one polishing step of type A in which a substrate is polished on a polishing pad containing bonded abrasive material in the polishing pad, and a polishing agent solution is introduced between the substrate and the polishing pad during the polishing step; and at least one polishing step of type B in which the substrate is polished on the polishing pad containing the abrasive material bonded in the polishing pad, and a polishing agent slurry containing unbonded abrasive material is introduced between the substrate and the polishing pad during the polishing step. With the method, remarkably low "haze" and RMS roughness value are expected.
摘要翻译：要解决的问题：提供一种用于抛光由半导体材料组成的基板的改进方法，其特别是产生与微粗糙度相关的低值。解决方案：一种方法包括：A型的至少一个抛光步骤，其中在抛光垫中的包含粘合的研磨材料的抛光垫上抛光基底，并且抛光剂溶液被引入到基底和抛光垫之间在抛光步骤中; 以及至少一种抛光步骤，其中在包含研磨垫中的研磨材料的研磨垫上研磨基材，并且在研磨过程中将含有未结合研磨材料的研磨剂浆料引入基板和抛光垫之间步。使用该方法，预期显着低的“雾度”和RMS粗糙度值。版权所有（C）2012，JPO＆INPIT

7. 发明专利

JP2009016833A Process for cleaning semiconductor wafer using cleaning solution 有权
标题翻译：使用清洁溶液清洁半导体滤波器的过程
公开(公告)号：JP2009016833A
公开(公告)日：2009-01-22
申请号：JP2008172183
申请日：2008-07-01
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： ZAPILKO CLEMENS , BUSCHHARDT THOMAS , FEIJOO DIEGO , SCHWAB GUENTER
IPC分类号： H01L21/304
CPC分类号： C11D11/0047 , C11D7/08 , C11D7/3209 , H01L21/02052
摘要： PROBLEM TO BE SOLVED: To provide a cleaning process which has an improved cleaning effect over and above the advantages of the individual-wafer treatment and the preparation of the cleaning solution at the site of its use.
SOLUTION: The process for cleaning a semiconductor wafer uses a cleaning solution containing an ammonium-alkaline ammonium component in an initial composition, wherein the semiconductor wafer is brought into contact with the cleaning solution in an individual-wafer treatment, and in the course of cleaning hydrogen fluoride is added as further component to the cleaning solution, and the cleaning solution has at the end of cleaning, a composition that differs from the initial composition.
COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供一种清洁方法，该清洗方法除了在单个晶片处理和在其使用现场的清洁溶液的制备之外，具有改善的清洗效果。解决方案：用于清洁半导体晶片的方法使用初始组成中含有铵 - 铵铵组分的清洗溶液，其中半导体晶片在单晶硅处理中与清洗溶液接触，并且在清洗过程中氟化氢作为进一步的组分加入到清洗溶液中，清洗液在清洗结束时具有不同于初始组成的组合物。版权所有（C）2009，JPO＆INPIT

8. 发明专利

JP2008311660A Method for cleaning and drying semiconductor wafer, and for making it hydrophilic 有权
标题翻译：清洁和干燥半导体滤波器的方法，以及制造它的水文
公开(公告)号：JP2008311660A
公开(公告)日：2008-12-25
申请号：JP2008155145
申请日：2008-06-13
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： SCHWAB GUENTER , ZAPILKO CLEMENS , BUSCHHARDT THOMAS , FEIJOO DIEGO
IPC分类号： H01L21/304
CPC分类号： H01L21/02052 , C30B29/16 , C30B33/00
摘要： PROBLEM TO BE SOLVED: To provide a cleaning method and a drying method to improve concentrations of particles, metal and organic impurities on the surface of a cleaned semiconductor wafer. SOLUTION: The method for cleaning and drying the semiconductor wafer and for making it hydrophilic includes the following processes as described below in this order. (a) The semiconductor wafer is treated by a liquid aqueous solution including a hydrogen fluoride, and then the semiconductor wafer is rotated at least temporarily centering around its central axis. (b) The semiconductor wafer is rotated at a rotating speed of 1,000 to 5,000 rpm centering around its central axis in an atmosphere including ozone to dry the semiconductor wafer, and the liquid aqueous solution including the hydrogen fluoride is caused to flow out by a centrifugal force generated by rotation from the semiconductor wafer, then the surface of the semiconductor wafer is made hydrophilic by the ozone. COPYRIGHT: (C)2009,JPO&INPIT
摘要翻译：要解决的问题：提供清洁方法和干燥方法以改善清洁的半导体晶片表面上的颗粒，金属和有机杂质的浓度。解决方案：用于清洁和干燥半导体晶片并使其亲水的方法包括如下所述的以下处理。（a）通过包含氟化氢的液体水溶液处理半导体晶片，然后半导体晶片至少临时围绕其中心轴线旋转。（b）半导体晶片在包含臭氧的气氛中以其中心轴为中心以1000〜5000转的速度旋转，干燥半导体晶片，使含氟化氢的液体水溶液通过离心机通过从半导体晶片的旋转产生的力，则半导体晶片的表面被臭氧制成亲水性。版权所有（C）2009，JPO＆INPIT

9. 发明专利

JP2011216887A Method for both-surface polishing of semiconductor wafer 有权
标题翻译：半导体波形表面抛光方法
公开(公告)号：JP2011216887A
公开(公告)日：2011-10-27
申请号：JP2011069883
申请日：2011-03-28
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： SCHWANDNER JUERGEN , BUSCHHARDT THOMAS , KOPPERT ROLAND
IPC分类号： H01L21/304
CPC分类号： H01L21/02024 , B24B37/044 , B24B37/08
摘要： PROBLEM TO BE SOLVED: To avoid asymmetrical polishing removal at an edge area of a semiconductor wafer during both-surface polishing.SOLUTION: The present invention relates to a method for both-surface polishing of the semiconductor wafer that includes simultaneous both-surface polishing of the semiconductor wafer 4. The semiconductor wafer 4 temporarily protrudes from a work gap formed by an upper polishing plate 22 and a lower polishing plate 21, and each of polishing pads 11 and 12 has an arrangement of a channel having a width and a depth of 0.5 to 2 mm so as to form a lattice-shaped arrangement of square sections. The first polishing pad 12 has sections larger than 20 mm×20 mm and the second polishing pad 11 has sections equal to or smaller than 20 mm×20 mm, and both the polishing pads 11 and 12 contain abrasive grains of an oxide, selected from the group of silicon, aluminum, and cerium, having an average size of 0.1 to 1.0 μm. Polishing liquids are supplied during a polishing process, wherein a polishing liquid having a pH of 11-12.5 is supplied in a first stage and a polishing liquid having a pH of ≥13 is supplied in a second stage.
摘要翻译：要解决的问题：为了避免在两面抛光期间在半导体晶片的边缘区域处的不对称抛光去除。解决方案：本发明涉及一种用于半导体晶片的两面抛光的方法，包括同时进行两面抛光半导体晶片4从由上抛光板22和下抛光板21形成的工作间隙临时突出，并且每个抛光垫11和12具有宽度和深度为 0.5〜2mm，形成方形截面的格子状排列。第一抛光垫12具有大于20mm×20mm的部分，第二抛光垫11具有等于或小于20mm×20mm的部分，并且两个抛光垫11和12都含有选自以下的氧化物的磨粒：硅，铝和铈的一组，其平均尺寸为0.1〜1.0μm。在抛光过程中提供抛光液体，其中在第一阶段中提供pH为11-12.5的抛光液，并且在第二阶段中提供pH≥13的抛光液。

10. 发明专利

JP2011103460A Method for polishing semiconductor wafer 审中-公开
标题翻译：抛光半导体波形的方法
公开(公告)号：JP2011103460A
公开(公告)日：2011-05-26
申请号：JP2010241303
申请日：2010-10-27
申请人： Siltronic Ag , ジルトロニックアクチエンゲゼルシャフトSiltronic AG
发明人： SCHWANDNER JUERGEN , BUSCHHARDT THOMAS , KOPPERT ROLAND
IPC分类号： H01L21/304 , B24B37/00 , B24B37/04
CPC分类号： B24B1/00 , H01L21/02024
摘要： PROBLEM TO BE SOLVED: To solve the following problem: a polishing machine and a wafer holding system which are usually used are partially disadvantageous in the case of FAP polishing steps using comparatively hard and stiff FAP polishing pads. SOLUTION: A method for polishing a semiconductor wafer 4 includes polishing of one side of the semiconductor wafer 4 by means of a polishing pad 2 which is fixed on a polishing plate 1 and which contains fixedly bonded abrasive materials, while a polishing agent is introduced between that side of the semiconductor wafer 4 which is to be polished and the polishing pad 2, wherein the semiconductor wafer 4 is held during the polishing by means of a holding system, which is fixed on a carrier 5 and which includes a lined cutout of the size of the semiconductor wafer to be received, in the cutout by means of adhesion by the side that is not polished, and the carrier 5 is guided such that the semiconductor wafer 4 temporarily projects with a part of its surface beyond the surface of the polishing pad during the polishing. COPYRIGHT: (C)2011,JPO&INPIT
摘要翻译：要解决的问题为了解决以下问题：在使用比较硬且刚性的FAP抛光垫的FAP抛光步骤的情况下，通常使用的抛光机和晶片保持系统是部分不利的。解决方案：用于抛光半导体晶片4的方法包括通过固定在抛光板1上的抛光垫2抛光半导体晶片4的一侧，并且包含固定结合的磨料，同时抛光剂被引入待抛光的半导体晶片4的一侧和抛光垫2之间，其中半导体晶片4在通过固定在载体5上的保持系统的抛光期间保持，并且包括内衬在待切割的半导体晶片的尺寸的切口中，通过未被抛光的侧面的粘合而在切口中引导载体5，使得半导体晶片4的一部分表面临时突出超过表面的抛光垫。版权所有（C）2011，JPO＆INPIT

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