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1. 发明申请

US20070234539A1 Method for manufacturing capacitor embedded in PCB 失效
标题翻译：制造电容器嵌入PCB的方法
公开(公告)号：US20070234539A1
公开(公告)日：2007-10-11
申请号：US11730979
申请日：2007-04-05
申请人： Seung Eun Lee , Yul Kyo Chung , Hyung Dong Kang , Hyun Ju Jin
发明人： Seung Eun Lee , Yul Kyo Chung , Hyung Dong Kang , Hyun Ju Jin
IPC分类号： H04R17/00 , H01L21/8242
CPC分类号： H04R19/00 , H05K1/162 , H05K2201/0175 , H05K2201/0179 , H05K2201/0355 , H05K2201/09309 , H05K2203/0346 , H05K2203/0353 , Y10T29/417 , Y10T29/42 , Y10T29/43 , Y10T29/435
摘要： A method for manufacturing a capacitor embedded in a PCB includes: preparing a copper clad lamination (CCL) substrate having a reinforcement member and copper foils formed on both surfaces of the reinforcement member; planarizing surfaces of the copper foils of the CCL substrate; forming a dielectric layer on the planarized surface of the copper foils; and forming a top electrode on the dielectric layer.
摘要翻译：一种嵌入在PCB中的电容器的制造方法，其特征在于，包括：具有加强部件的铜包覆层叠（CCL）基板和形成在所述加强部件的两面的铜箔; 平坦化CCL基板的铜箔表面; 在铜箔的平坦化表面上形成电介质层; 并在电介质层上形成顶部电极。

2. 发明授权

US07736397B2 Method for manufacturing capacitor embedded in PCB 失效
标题翻译：制造电容器嵌入PCB的方法
公开(公告)号：US07736397B2
公开(公告)日：2010-06-15
申请号：US11730979
申请日：2007-04-05
申请人： Seung Eun Lee , Yul Kyo Chung , Hyung Dong Kang , Hyun Ju Jin
发明人： Seung Eun Lee , Yul Kyo Chung , Hyung Dong Kang , Hyun Ju Jin
IPC分类号： H01L21/8242 , H01G9/00
CPC分类号： H04R19/00 , H05K1/162 , H05K2201/0175 , H05K2201/0179 , H05K2201/0355 , H05K2201/09309 , H05K2203/0346 , H05K2203/0353 , Y10T29/417 , Y10T29/42 , Y10T29/43 , Y10T29/435
摘要： A method for manufacturing a capacitor embedded in a PCB includes: preparing a copper clad lamination (CCL) substrate having a reinforcement member and copper foils formed on both surfaces of the reinforcement member; planarizing surfaces of the copper foils of the CCL substrate; forming a dielectric layer on the planarized surface of the copper foils; and forming a top electrode on the dielectric layer.
摘要翻译：一种嵌入在PCB中的电容器的制造方法，其特征在于，包括：具有加强部件的铜包层压（CCL）基板和形成在所述加强部件的两面上的铜箔; 平坦化CCL基板的铜箔表面; 在铜箔的平坦化表面上形成电介质层; 并在电介质层上形成顶部电极。

3. 发明授权

US07485411B2 Method for manufacturing printed circuit board with thin film capacitor embedded therein 失效
标题翻译：制造具有薄膜电容器的印刷电路板的制造方法
公开(公告)号：US07485411B2
公开(公告)日：2009-02-03
申请号：US11700864
申请日：2007-02-01
申请人： Hyung Mi Jung , Yul Kyo Chung , Hyung Dong Kang
发明人： Hyung Mi Jung , Yul Kyo Chung , Hyung Dong Kang
IPC分类号： G03C5/00
CPC分类号： H05K1/162 , H05K3/16 , H05K3/4602 , H05K2201/0175 , H05K2201/0179 , H05K2201/09763
摘要： In a method for manufacturing a printed circuit board with a thin film capacitor embedded therein, a conductive metal is sputtered via a first mask to form a lower electrode. A dielectric material is sputtered via a second mask to form a dielectric layer. The conductive metal is sputtered via a third mask to form an upper electrode. An insulating layer is stacked on a stack body with the upper electrode formed therein and via holes are perforated from a top surface of the insulating layer to a top surface of the lower electrode and from the top surface of the insulating layer to a top surface of the upper electrode formed on the substrate. Also, the stack body with the via holes formed therein is electrolytically and electrolessly plated.
摘要翻译：在其中嵌入有薄膜电容器的印刷电路板的制造方法中，通过第一掩模溅射导电金属以形成下电极。通过第二掩模溅射介电材料以形成电介质层。通过第三掩模溅射导电金属以形成上电极。绝缘层堆积在堆叠体上，上电极形成在其中，并且通孔从绝缘层的顶表面穿孔到下电极的顶表面，并从绝缘层的顶表面到上电极形成在基板上。此外，其中形成有通孔的堆叠体是电解和无电镀的。

4. 发明申请

US20070178412A1 Method for manufacturing printed circuit board with thin film capacitor embedded therein 失效
标题翻译：制造具有薄膜电容器的印刷电路板的制造方法
公开(公告)号：US20070178412A1
公开(公告)日：2007-08-02
申请号：US11700864
申请日：2007-02-01
申请人： Hyung Mi Jung , Yul Kyo Chung , Hyung Dong Kang
发明人： Hyung Mi Jung , Yul Kyo Chung , Hyung Dong Kang
IPC分类号： G03C5/00
CPC分类号： H05K1/162 , H05K3/16 , H05K3/4602 , H05K2201/0175 , H05K2201/0179 , H05K2201/09763
摘要： In a method for manufacturing a printed circuit board with a thin film capacitor embedded therein, a conductive metal is sputtered via a first mask to form a lower electrode. A dielectric material is sputtered via a second mask to form a dielectric layer. The conductive metal is sputtered via a third mask to form an upper electrode. An insulating layer is stacked on a stack body with the upper electrode formed therein and via holes are perforated from a top surface of the insulating layer to a top surface of the lower electrode and from the top surface of the insulating layer to a top surface of the upper electrode formed on the substrate. Also, the stack body with the via holes formed therein is electrolytically and electrolessly plated.
摘要翻译：在其中嵌入有薄膜电容器的印刷电路板的制造方法中，通过第一掩模溅射导电金属以形成下电极。通过第二掩模溅射介电材料以形成电介质层。通过第三掩模溅射导电金属以形成上电极。绝缘层堆积在堆叠体上，上电极形成在其中，并且通孔从绝缘层的顶表面穿孔到下电极的顶表面，并从绝缘层的顶表面到上电极形成在基板上。此外，其中形成有通孔的堆叠体是电解和无电镀的。

5. 发明申请

US20070215855A1 Wavelength tunable light emitting device by applying pressure 审中-公开
标题翻译：通过施加压力的波长可调谐发光器件
公开(公告)号：US20070215855A1
公开(公告)日：2007-09-20
申请号：US11724212
申请日：2007-03-15
申请人： Hyung Dong Kang
发明人： Hyung Dong Kang
IPC分类号： H01L29/06
CPC分类号： H01L25/167 , H01L33/0004 , H01L33/02 , H01L2924/0002 , H01L2924/00
摘要： A wavelength-tunable light emitting device. A resilient support substrate is provided, and a light emitting diode is formed on an area of the support substrate. The light emitting diode includes a first conductivity type semiconductor layer, an active layer and a second conductivity type semiconductor layer formed in their order. Pressure is applied to the active layer by bending the support substrate, thereby changing the energy band gap of the active layer.
摘要翻译：波长可调谐发光器件。提供弹性支撑基板，并且在支撑基板的区域上形成发光二极管。发光二极管包括依次形成的第一导电型半导体层，有源层和第二导电型半导体层。通过弯曲支撑基板向活性层施加压力，从而改变有源层的能带隙。

6. 发明授权

US08338221B2 Method for manufacturing thin film type solar cell 有权
标题翻译：制造薄膜型太阳能电池的方法
公开(公告)号：US08338221B2
公开(公告)日：2012-12-25
申请号：US12628215
申请日：2009-12-01
申请人： Chang Ho Lee , Hyung Dong Kang , Hyun Ho Lee , Yong Hyun Lee , Seon Myung Kim
发明人： Chang Ho Lee , Hyung Dong Kang , Hyun Ho Lee , Yong Hyun Lee , Seon Myung Kim
IPC分类号： H01L21/00 , H01L29/04 , H01L29/10 , H01L31/00
CPC分类号： H01L31/075 , H01L21/02532 , H01L21/02592 , H01L21/0262 , H01L31/03767 , H01L31/202 , Y02E10/548 , Y02P70/521
摘要： A method for manufacturing a thin film type solar cell is disclosed, which is capable of reducing degradation of solar cell by decreasing the number of dangling bonding sites or SiH2 bonding sites existing in amorphous silicon owing to an optimal content ratio of ingredient gases, an optimal chamber pressure, or an optimal substrate temperature during a process for depositing an I-type semiconductor layer of amorphous silicon by a plasma CVD method, the method comprising forming a front electrode layer on a substrate; sequentially depositing P-type, I-type, and N-type semiconductor layers on the front electrode layer; and forming a rear electrode layer on the N-type semiconductor layer, wherein the process for forming the I-type semiconductor layer comprises forming an amorphous silicon layer by the plasma CVD method under such circumstances that at least one of the aforementioned conditions is satisfied, for example, a content ratio of silicon-containing gas to hydrogen-containing gas is within a range between 1:7 and 1:10; a chamber pressure is maintained at a range between 2.0 Torr and 2.4 Torr; and a substrate temperature is maintained at a range between 225° C. and 250° C.
摘要翻译：公开了一种制造薄膜型太阳能电池的方法，其能够通过减少非晶硅中存在的悬挂键合位置或SiH 2键合位置的数量来减少太阳能电池的劣化，这是由于成分气体的最佳含量比，最佳在通过等离子体CVD法沉积非晶硅的I型半导体层的工艺期间的腔室压力或最佳衬底温度，所述方法包括在衬底上形成前电极层; 在前电极层上依次沉积P型，I型和N型半导体层; 以及在所述N型半导体层上形成后电极层，其中所述形成所述I型半导体层的工艺包括通过等离子体CVD法在满足上述条件中的至少一个条件的情况下形成非晶硅层，例如，含硅气体与含氢气体的含有比例在1:7〜1:10的范围内; 腔室压力保持在2.0托和2.4托之间的范围内; 并且衬底温度保持在225℃和250℃之间的范围内。

7. 发明申请

US20100037947A1 Thin film type solar cell and method for manufacturing the same 审中-公开
标题翻译：薄膜型太阳能电池及其制造方法
公开(公告)号：US20100037947A1
公开(公告)日：2010-02-18
申请号：US12462674
申请日：2009-08-07
申请人： Yong Hyun Lee , Hyung Dong Kang
发明人： Yong Hyun Lee , Hyung Dong Kang
IPC分类号： H01L31/105 , H01L31/18
CPC分类号： H01L31/0392 , H01L31/0465 , H01L31/076 , Y02E10/548
摘要： A thin film type solar cell and a method for manufacturing the same is disclosed, the thin film type solar cell comprising a first electrode in a predetermined pattern on a substrate; a first semiconductor layer on the first electrode; a second electrode in a predetermined pattern on the first semiconductor layer; a second semiconductor layer on the second electrode; and a third electrode in a predetermined pattern on the second semiconductor layer, the first and third electrodes being electrically connected with each other, wherein a first solar cell is composed of a combination of the first electrode, the first semiconductor layer, and the second electrode; a second solar cell is composed of a combination of the second electrode, the second semiconductor layer, and the third electrode; and the first and second solar cells are connected in parallel, whereby it is possible to realize improved efficiency of the entire thin film type solar cell without performing a process for a current matching between the first and second solar cells.
摘要翻译：公开了一种薄膜型太阳能电池及其制造方法，所述薄膜型太阳能电池在基板上具有规定图案的第一电极，第一电极上的第一半导体层; 在所述第一半导体层上的预定图案中的第二电极; 第二电极上的第二半导体层; 以及在所述第二半导体层上的预定图案中的第三电极，所述第一和第三电极彼此电连接，其中第一太阳能电池由所述第一电极，所述第一半导体层和所述第二电极的组合构成 ; 第二太阳能电池由第二电极，第二半导体层和第三电极的组合构成; 并且第一和第二太阳能电池并联连接，从而可以在不执行用于第一和第二太阳能电池之间的电流匹配的处理的情况下实现整个薄膜型太阳能电池的整体效率。

8. 发明申请

US20090117683A1 Method of manufacturing single crystal substate and method of manufacturing solar cell using the same 审中-公开
标题翻译：制造单晶基板的方法及使用其制造太阳能电池的方法
公开(公告)号：US20090117683A1
公开(公告)日：2009-05-07
申请号：US12155156
申请日：2008-05-30
申请人： Hyung Dong Kang
发明人： Hyung Dong Kang
IPC分类号： H01L21/00 , C30B11/00
CPC分类号： C30B13/14 , C30B13/16 , C30B29/06 , H01L31/068 , H01L31/18 , Y02E10/547
摘要： In accordance with the present invention, a method for manufacturing a single-crystal substrate comprising the steps of: preparing a square-shaped frame; pouring polycrystalline molten silicon into the prepared frame; cooling and crystallizing the molten silicon; and forming the single-crystal silicon substrate by transferring a heating element from one corner of the frame to another corner opposite the corner, thus simplifying the entire manufacturing process of the single-crystal substrate and reducing the material cost.
摘要翻译：根据本发明，制造单晶衬底的方法包括以下步骤：制备正方形框架; 将多晶熔融硅浇注到制备的框架中; 冷却和结晶熔融硅; 并且通过将加热元件从框架的一个角部转移到与拐角相对的另一角部来形成单晶硅基板，从而简化了单晶基板的整个制造工艺并降低了材料成本。

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