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1. 发明授权

US08679955B2 Method for forming epitaxial wafer and method for fabricating semiconductor device 有权
标题翻译：用于形成外延晶片的方法和用于制造半导体器件的方法
公开(公告)号：US08679955B2
公开(公告)日：2014-03-25
申请号：US13202419
申请日：2010-02-10
申请人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Hideaki Nakahata , Shinsuke Fujiwara
发明人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Hideaki Nakahata , Shinsuke Fujiwara
IPC分类号： H01L21/20
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/16 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/007
摘要： A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.
摘要翻译：提供了一种用于形成外延晶片的方法，其可以在氧化镓区域上使得能够以良好的晶体质量生长氮化镓基半导体。在步骤S107中，生长AlN缓冲层13。在步骤S108中，在时刻t5，将除了氮以外的氢，三甲基铝和氨的原料气G1供给到生长反应器10中，以在主面11a上生长AlN缓冲层13。 AlN缓冲层13被称为低温缓冲层。在开始形成缓冲层13之后，在步骤S109中，在时刻t6开始供给氢（H2）。在时间t6，H2，N2，TMA和NH3被供应到生长反应器10中。在时间t6和t7之间，氢的供应量增加，而在时间t7，氢的增加被终止以提供恒定的量的氢。在时间t7，将H2，TMA和NH3供应到生长反应器10中。

2. 发明申请

US20120070929A1 METHOD FOR FABRICATING WAFER PRODUCT AND METHOD FOR FABRICATING GALLIUM NITRIDE BASED SEMICONDUCTOR OPTICAL DEVICE 有权
标题翻译：用于制造波形产品的方法和用于制造基于氮化镓的半导体光学器件的方法
公开(公告)号：US20120070929A1
公开(公告)日：2012-03-22
申请号：US13318039
申请日：2010-03-01
申请人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： H01L33/36 , H01L21/20
CPC分类号： C23C16/0227 , C23C16/0272 , C23C16/303 , C30B25/183 , C30B29/406 , H01L33/007
摘要： Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S105, a buffer layer 13 comprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surface 11a of a gallium oxide substrate 11. After the growth of the buffer layer 13, while supplying a gas G2, which contains hydrogen and nitrogen, into a growth reactor 10, the gallium oxide substrate 11 and the buffer layer 13 are exposed to an atmosphere in the growth reactor 11 at 1050 Celsius degrees. A Group III nitride semiconductor layer 15 is grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layer 15 can be comprised of GaN and AlGaN. When the Group III nitride semiconductor layer 15 is formed of these materials, excellent crystal quality is obtained on the modified buffer layer 14.
摘要翻译：本发明提供一种制造晶片产品的方法，该晶片产品包括在氧化镓衬底上生长的有源层并且能够提高发光强度。在步骤S105中，在氧化镓衬底11的主表面11a上以600摄氏度生长由诸如GaN，AlGaN或AlN的III族氮化物构成的缓冲层13.在缓冲层13生长之后，同时将含有氢和氮的气体G2供给到生长反应器10中，将氧化镓衬底11和缓冲层13在生长反应器11中的气氛中以1050摄氏度暴露。在改性缓冲层上生长III族氮化物半导体层15。改性缓冲层包括例如空隙。 III族氮化物半导体层15可以由GaN和AlGaN构成。当由这些材料形成III族氮化物半导体层15时，在改性缓冲层14上获得优异的晶体质量。

3. 发明授权

US08592289B2 Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer 失效
标题翻译：外延晶片，氮化镓半导体器件的制造方法，氮化镓半导体器件和氧化镓晶片
公开(公告)号：US08592289B2
公开(公告)日：2013-11-26
申请号：US13148543
申请日：2010-02-04
申请人： Shin Hashimoto , Katsushi Akita , Shinsuke Fujiwara , Hideaki Nakahata , Kensaku Motoki
发明人： Shin Hashimoto , Katsushi Akita , Shinsuke Fujiwara , Hideaki Nakahata , Kensaku Motoki
IPC分类号： H01L21/20 , H01L21/36 , C30B23/00 , C30B25/00 , C30B28/12 , C30B28/14
CPC分类号： H01L21/0242 , C30B25/18 , C30B29/16 , C30B29/403 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L33/007 , H01L33/16
摘要： A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base 32 having a primary surface 32a of monoclinic gallium oxide, and a laminate structure 33 of Group III nitride. A semiconductor mesa of the laminate structure 33 includes a low-temperature GaN buffer layer 35, an n-type GaN layer 37, an active layer 39 of a quantum well structure, and a p-type gallium nitride based semiconductor layer 37. The p-type gallium nitride based semiconductor layer 37 includes, for example, a p-type AlGaN electron block layer and a p-type GaN contact layer. The primary surface 32a of the gallium oxide support base 32 is inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of monoclinic gallium oxide. Owing to this inclination, the gallium nitride based semiconductor epitaxially grown on the primary surface 32a of the gallium oxide support base has a flat surface.
摘要翻译：提供了一种氮化镓基半导体器件，其包括在氧化镓晶片上设置有平坦c面的氮化镓基半导体膜。发光二极管LED包括具有单斜氧化镓的主表面32a的氧化镓载体基底32和III族氮化物的叠层结构33。层压结构33的半导体台面包括低温GaN缓冲层35，n型GaN层37，量子阱结构的有源层39和p型氮化镓基半导体层37. p 型氮化镓系半导体层37例如包括p型AlGaN电子阻挡层和p型GaN接触层。氧化镓载体基体32的主表面32a相对于单斜晶系氧化镓的（100）面倾斜2度以上4度以下。由于该倾斜，在氧化镓载体基体的主表面32a上外延生长的氮化镓基半导体具有平坦的表面。

4. 发明授权

US08415180B2 Method for fabricating wafer product and method for fabricating gallium nitride based semiconductor optical device 有权
标题翻译：制造晶圆产品的方法和用于制造氮化镓基半导体光学器件的方法
公开(公告)号：US08415180B2
公开(公告)日：2013-04-09
申请号：US13318039
申请日：2010-03-01
申请人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Shinsuke Fujiwara , Hideaki Nakahata
发明人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Shinsuke Fujiwara , Hideaki Nakahata
IPC分类号： H01L21/00
CPC分类号： C23C16/0227 , C23C16/0272 , C23C16/303 , C30B25/183 , C30B29/406 , H01L33/007
摘要： Provided is a method for fabricating a wafer product including an active layer grown on a gallium oxide substrate and allowing an improvement in emission intensity. In step S105, a buffer layer 13 comprised of a Group III nitride such as GaN, AlGaN, or AlN is grown at 600 Celsius degrees on a primary surface 11a of a gallium oxide substrate 11. After the growth of the buffer layer 13, while supplying a gas G2, which contains hydrogen and nitrogen, into a growth reactor 10, the gallium oxide substrate 11 and the buffer layer 13 are exposed to an atmosphere in the growth reactor 11 at 1050 Celsius degrees. A Group III nitride semiconductor layer 15 is grown on the modified buffer layer. The modified buffer layer includes, for example, voids. The Group III nitride semiconductor layer 15 can be comprised of GaN and AlGaN. When the Group III nitride semiconductor layer 15 is formed of these materials, excellent crystal quality is obtained on the modified buffer layer 14.
摘要翻译：本发明提供一种制造晶片产品的方法，该晶片产品包括在氧化镓衬底上生长的有源层并且能够提高发光强度。在步骤S105中，在氧化镓衬底11的主表面11a上以600摄氏度生长由诸如GaN，AlGaN或AlN的III族氮化物构成的缓冲层13.在缓冲层13生长之后，同时将含有氢和氮的气体G2供给到生长反应器10中，将氧化镓衬底11和缓冲层13在生长反应器11中的气氛中以1050摄氏度暴露。在改性缓冲层上生长III族氮化物半导体层15。改性缓冲层包括例如空隙。 III族氮化物半导体层15可以由GaN和AlGaN构成。当由这些材料形成III族氮化物半导体层15时，在改性缓冲层14上获得优异的晶体质量。

5. 发明申请

US20120003770A1 METHOD FOR FORMING EPITAXIAL WAFER AND METHOD FOR FABRICATING SEMICONDUCTOR DEVICE 有权
标题翻译：用于形成外延晶体的方法和用于制造半导体器件的方法
公开(公告)号：US20120003770A1
公开(公告)日：2012-01-05
申请号：US13202419
申请日：2010-02-10
申请人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Hideaki Nakahata , Shinsuke Fujiwara
发明人： Shin Hashimoto , Katsushi Akita , Kensaku Motoki , Hideaki Nakahata , Shinsuke Fujiwara
IPC分类号： H01L21/20 , H01L33/32 , B82Y40/00
CPC分类号： H01L21/0262 , C30B25/02 , C30B29/16 , C30B29/403 , H01L21/0242 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L33/007
摘要： A method for forming an epitaxial wafer is provided as one enabling growth of a gallium nitride based semiconductor with good crystal quality on a gallium oxide region. In step S107, an AlN buffer layer 13 is grown. In step S108, at a time t5, a source gas G1 containing hydrogen, trimethylaluminum, and ammonia, in addition to nitrogen, is supplied into a growth reactor 10 to grow the AlN buffer layer 13 on a primary surface 11a. The AlN buffer layer 13 is so called a low-temperature buffer layer. After a start of film formation of the buffer layer 13, in step S109 supply of hydrogen (H2) is started at a time t6. At the time t6, H2, N2, TMA, and NH3 are supplied into the growth reactor 10. A supply amount of hydrogen is increased between times t6 and t7, and at the time t7 the increase of hydrogen is terminated to supply a constant amount of hydrogen. At the time t7, H2, TMA, and NH3 are supplied into the growth reactor 10.
摘要翻译：提供了一种用于形成外延晶片的方法，其可以在氧化镓区域上使得能够以良好的晶体质量生长氮化镓基半导体。在步骤S107中，生长AlN缓冲层13。在步骤S108中，在时刻t5，将除了氮以外的氢，三甲基铝和氨的原料气G1供给到生长反应器10中，以在主面11a上生长AlN缓冲层13。 AlN缓冲层13被称为低温缓冲层。在开始形成缓冲层13之后，在步骤S109中，在时刻t6开始供给氢（H2）。在时间t6，H2，N2，TMA和NH3被供应到生长反应器10中。在时间t6和t7之间，氢的供应量增加，而在时间t7，氢的增加被终止以提供恒定的量的氢。在时间t7，将H2，TMA和NH3供应到生长反应器10中。

6. 发明申请

US20110315998A1 EPITAXIAL WAFER, METHOD FOR MANUFACTURING GALLIUM NITRIDE SEMICONDUCTOR DEVICE, GALLIUM NITRIDE SEMICONDUCTOR DEVICE AND GALLIUM OXIDE WAFER 失效
标题翻译：外延膜，制造氮化镓半导体器件的方法，氮化镓半导体器件和氧化铝膜
公开(公告)号：US20110315998A1
公开(公告)日：2011-12-29
申请号：US13148543
申请日：2010-02-04
申请人： Shin Hashimoto , Katsushi Akita , Shinsuke Fujiwara , Hideaki Nakahata , Kensaku Motoki
发明人： Shin Hashimoto , Katsushi Akita , Shinsuke Fujiwara , Hideaki Nakahata , Kensaku Motoki
IPC分类号： H01L29/20 , C01G15/00 , H01L21/20
CPC分类号： H01L21/0242 , C30B25/18 , C30B29/16 , C30B29/403 , H01L21/02433 , H01L21/02458 , H01L21/0254 , H01L21/0262 , H01L29/045 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L33/007 , H01L33/16
摘要： A gallium nitride based semiconductor device is provided which includes a gallium nitride based semiconductor film with a flat c-plane surface provided on a gallium oxide wafer. A light emitting diode LED includes a gallium oxide support base 32 having a primary surface 32a of monoclinic gallium oxide, and a laminate structure 33 of Group III nitride. A semiconductor mesa of the laminate structure 33 includes a low-temperature GaN buffer layer 35, an n-type GaN layer 37, an active layer 39 of a quantum well structure, and a p-type gallium nitride based semiconductor layer 37. The p-type gallium nitride based semiconductor layer 37 includes, for example, a p-type AlGaN electron block layer and a p-type GaN contact layer. The primary surface 32a of the gallium oxide support base 32 is inclined at an angle of not less than 2 degrees and not more than 4 degrees relative to a (100) plane of monoclinic gallium oxide. Owing to this inclination, the gallium nitride based semiconductor epitaxially grown on the primary surface 32a of the gallium oxide support base has a flat surface.
摘要翻译：提供了一种氮化镓基半导体器件，其包括在氧化镓晶片上设置有平坦c面的氮化镓基半导体膜。发光二极管LED包括具有单斜氧化镓的主表面32a的氧化镓载体基底32和III族氮化物的叠层结构33。层压结构33的半导体台面包括低温GaN缓冲层35，n型GaN层37，量子阱结构的有源层39和p型氮化镓基半导体层37. p 型氮化镓系半导体层37例如包括p型AlGaN电子阻挡层和p型GaN接触层。氧化镓载体基体32的主表面32a相对于单斜晶系氧化镓的（100）面倾斜2度以上4度以下。由于该倾斜，在氧化镓载体基体的主表面32a上外延生长的氮化镓基半导体具有平坦的表面。

7. 发明授权

US08633514B2 Group III nitride semiconductor wafer and group III nitride semiconductor device 有权
标题翻译： III族氮化物半导体晶片和III族氮化物半导体器件
公开(公告)号：US08633514B2
公开(公告)日：2014-01-21
申请号：US13409798
申请日：2012-03-01
申请人： Shin Hashimoto , Tatsuya Tanabe , Katsushi Akita , Hideaki Nakahata , Hiroshi Amano
发明人： Shin Hashimoto , Tatsuya Tanabe , Katsushi Akita , Hideaki Nakahata , Hiroshi Amano
IPC分类号： H01L29/66
CPC分类号： H01L29/7787 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02661 , H01L29/2003 , H01L29/66212 , H01L29/66462 , H01L29/872
摘要： A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of AlXGa1-XN (0
摘要翻译：提供III族氮化物半导体器件和III族氮化物半导体晶片。 III族氮化物半导体器件具有包含含有Al的III族氮化物基半导体的沟道层。 III族氮化物半导体器件可以增强二维电子气的迁移率并改善电流特性。 III族氮化物半导体晶片用于制造III族氮化物半导体器件。 III族氮化物半导体晶片包括由AlXGa1-XN（0

8. 发明申请

US20120211801A1 GROUP III NITRIDE LAMINATED SEMICONDUCTOR WAFER AND GROUP III NITRIDE SEMICONDUCTOR DEVICE 审中-公开
标题翻译：第III组氮化物层叠半导体晶体管和III族氮化物半导体器件
公开(公告)号：US20120211801A1
公开(公告)日：2012-08-23
申请号：US13392998
申请日：2010-08-23
申请人： Shin Hashimoto , Katsushi Akita , Hideaki Nakahata , Hiroshi Amano
发明人： Shin Hashimoto , Katsushi Akita , Hideaki Nakahata , Hiroshi Amano
IPC分类号： H01L29/778 , H01L29/205
CPC分类号： H01L29/7785 , H01L29/2003
摘要： There is provided a normally-off group III nitride semiconductor device having a high breakdown field strength and minimal crystal defects, and a group III nitride laminated semiconductor wafer used to make the group III nitride semiconductor device. The group III nitride laminated semiconductor wafer 10 includes a substrate 27 which is made of AlN and has a main surface 27a along the c-axis of the AlN crystal, a first AlX1InY1Ga1-X1-Y1N layer 13 which is made of a group III nitride-based semiconductor containing Al and is provided on the main surface 27a, and a second AlX2InY2Ga1-X2-Y2N layer 15 which is provided on the main surface 27a, is made of a group III nitride-based semiconductor having a larger bandgap than the first AlX1InY1Ga1-X1-Y1N layer 13, and forms a heterojunction with the first AlX1InY1Ga1-X1-Y1N layer 13.
摘要翻译：提供了具有高击穿场强度和最小晶体缺陷的常规III族氮化物半导体器件，以及用于制造III族氮化物半导体器件的III族氮化物层压半导体晶片。 III族氮化物层叠半导体晶片10包括由AlN制成并具有沿AlN晶体的c轴的主表面27a的基板27，由III族氮化物制成的第一AlX1InY1Ga1-X1-Y1N层13 包含Al并且设置在主表面27a上，并且设置在主表面27a上的第二AlX2InY2Ga1-X2-Y2N层15由具有比第一个更大的带隙的III族氮化物基半导体制成 AlX1InY1Ga1-X1-Y1N层13，与第一AlX1InY1Ga1-X1-Y1N层13形成异质结。

9. 发明授权

US08148751B2 Group III nitride semiconductor wafer and group III nitride semiconductor device 有权
标题翻译： III族氮化物半导体晶片和III族氮化物半导体器件
公开(公告)号：US08148751B2
公开(公告)日：2012-04-03
申请号：US12732775
申请日：2010-03-26
申请人： Shin Hashimoto , Tatsuya Tanabe , Katsushi Akita , Hideaki Nakahata , Hiroshi Amano
发明人： Shin Hashimoto , Tatsuya Tanabe , Katsushi Akita , Hideaki Nakahata , Hiroshi Amano
IPC分类号： H01L29/66
CPC分类号： H01L29/7787 , H01L21/0242 , H01L21/02458 , H01L21/0254 , H01L21/02609 , H01L21/0262 , H01L21/02661 , H01L29/2003 , H01L29/66212 , H01L29/66462 , H01L29/872
摘要： A group III nitride semiconductor device and a group III nitride semiconductor wafer are provided. The group III nitride semiconductor device has a channel layer comprising group III nitride-based semiconductor containing Al. The group III nitride semiconductor device can enhance the mobility of the two-dimensional electron gas and improve current characteristics. The group III nitride semiconductor wafer is used to make the group III nitride semiconductor device. The group III nitride semiconductor wafer comprises a substrate made of AlXGa1-XN (0
摘要翻译：提供III族氮化物半导体器件和III族氮化物半导体晶片。 III族氮化物半导体器件具有包含含有Al的III族氮化物基半导体的沟道层。 III族氮化物半导体器件可以增强二维电子气的迁移率并改善电流特性。 III族氮化物半导体晶片用于制造III族氮化物半导体器件。 III族氮化物半导体晶片包括由Al x Ga 1-x N（0

10. 发明授权

US08653561B2 III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic device 有权
标题翻译： III族氮化物半导体电子器件，以及III族氮化物半导体电子器件的制造方法
公开(公告)号：US08653561B2
公开(公告)日：2014-02-18
申请号：US13038071
申请日：2011-03-01
申请人： Shin Hashimoto , Katsushi Akita , Yoshiyuki Yamamoto , Masaaki Kuzuhara , Norimasa Yafune
发明人： Shin Hashimoto , Katsushi Akita , Yoshiyuki Yamamoto , Masaaki Kuzuhara , Norimasa Yafune
IPC分类号： H01L21/02 , H01L29/778 , H01L21/335
CPC分类号： H01L29/66462 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02507 , H01L21/0254 , H01L29/2003 , H01L29/7787
摘要： A III-nitride semiconductor electronic device comprises a semiconductor laminate provided on a primary surface of a substrate, a first electrode in contact with the semiconductor laminate, and a second electrode. The semiconductor laminate includes a channel layer and a barrier layer making a junction with the channel layer. The channel layer comprises first III-nitride semiconductor containing aluminum as a Group III constituent element, and the barrier layer comprises second III-nitride semiconductor containing aluminum as a Group III constituent element. The semiconductor laminate including first, second and third regions arranged along the primary surface, and the third region is located between the first region and the second region. The barrier layer includes first to third portions included in the first to third regions, respectively. A concentration of impurity in the first portion is the same as that of impurity in the second portion, and the first and second electrodes is provided on the first and second regions, respectively. The first electrode includes a drain electrode or a source electrode. An aluminum composition of the first III-nitride semiconductor is not less than 0.16, and a bandgap of the second III-nitride semiconductor being larger than that of the first III-nitride semiconductor.
摘要翻译： III族氮化物半导体电子器件包括设置在衬底的主表面上的半导体层叠体，与半导体层叠体接触的第一电极和第二电极。半导体层叠体包括沟道层和与沟道层形成结的阻挡层。沟道层包括含有铝作为III族构成元素的第一III族氮化物半导体，并且阻挡层包含含有铝作为III族构成元素的第二III族氮化物半导体。包括沿主表面布置的第一，第二和第三区域以及第三区域的半导体层叠体位于第一区域和第二区域之间。阻挡层包括分别包括在第一至第三区域中的第一至第三部分。第一部分中的杂质浓度与第二部分中的杂质浓度相同，第一和第二电极分别设置在第一和第二区域上。第一电极包括漏电极或源电极。第一III族氮化物半导体的铝组成不小于0.16，并且第二III族氮化物半导体的带隙大于第一III族氮化物半导体的带隙。

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