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1. 发明授权

US11345603B2 Polycrystalline silicon bar, polycrystalline silicon rod, and manufacturing method thereof 有权
公开(公告)号：US11345603B2
公开(公告)日：2022-05-31
申请号：US16716825
申请日：2019-12-17
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Naruhiro Hoshino , Tetsuro Okada , Masahiko Ishida
IPC分类号： C01B33/035
摘要： In a step of performing cylindrical grinding of a polycrystalline silicon bar 10 grown by a Siemens method, this cylindrical grinding step is performed such that a polycrystalline silicon rod 30, whose center axis CR is shifted from a center axis C0 of a silicon core wire 20 by 2 mm or more, is manufactured.

2. 发明申请

US20190119829A1 POLYCRYSTALLINE SILICON ROD AND METHOD FOR PRODUCING SINGLE CRYSTAL SILICON 审中-公开
公开(公告)号：US20190119829A1
公开(公告)日：2019-04-25
申请号：US16161526
申请日：2018-10-16
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shuichi Miyao , Masahiko Ishida , Naruhiro Hoshino , Shigeyoshi Netsu
IPC分类号： C30B29/06 , C30B29/60 , C30B25/00 , C30B35/00 , C30B15/36 , C30B13/34 , C01B33/037
摘要： The present invention provides polycrystalline silicon suitably used as a raw material for producing single crystal silicon. The polycrystalline silicon rod of the present invention is a polycrystalline silicon rod grown by chemical vapor deposition performed under a pressure of 0.3 MPaG or more, wherein when a plate-shaped sample piece collected from an arbitrary portion of the polycrystalline silicon rod is observed with a microscope with a temperature increased from a temperature lower than a melting point of silicon up to a temperature exceeding the melting point of silicon, a heterogeneous crystal region, which is a crystal region including a plurality of crystal grains heterogeneously assembled and including no needle-like crystal, having a diameter exceeding 10 μm is not observed.

3. 发明申请

US20150017349A1 POLYCRYSTALLINE SILICON ROD MANUFACTURING METHOD 审中-公开
标题翻译：多晶硅制造方法
公开(公告)号：US20150017349A1
公开(公告)日：2015-01-15
申请号：US14380249
申请日：2013-02-19
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Shigeyoshi Netsu , Yasushi Kurosawa , Naruhiro Hoshino
IPC分类号： C23C16/46 , C23C16/24 , C23C16/50
CPC分类号： C23C16/46 , C01B33/035 , C23C16/24 , C23C16/50
摘要： Switches (S1-S3) allow switching between parallel/series configuration in a circuit (16) provided between two pairs of U-shaped silicon cores (12) arranged in a bell jar (1). In the circuit (16), current is supplied from one low-frequency power source (15L) supplying a low-frequency current, or from one high-frequency power source (15H) supplying a high-frequency current having a frequency of not less than 2 kHz. The two pairs of U-shaped silicon cores (12) (or polycrystalline silicon rods (11)) are connected to each other in series by closing the switch (S1) and opening the switches (S2 and S3), and when the switch (S4) is switched to the side of the high-frequency power source (15H), and electric heating of the silicon cores (12) can be performed by supplying a high-frequency current having a frequency of less than 2 kHz to the series-connected U-shaped silicon cores (12) (or polycrystalline silicon rods (11)).
摘要翻译：开关（S1-S3）允许在布置在钟罩（1）中的两对U形硅芯（12）之间提供的电路（16）中的并联/串联配置之间进行切换。在电路（16）中，从提供低频电流的一个低频电源（15L）或提供频率不少于的频率的一个高频电源（15H）提供电流超过2 kHz。通过闭合开关（S1）并打开开关（S2和S3），两对U形硅芯（12）（或多晶硅棒（11））彼此串联连接，并且当开关 S4）切换到高频电源（15H）的一侧，并且可以通过向串联电路提供具有小于2kHz的频率的高频电流来执行硅芯（12）的电加热。连接的U形硅芯（12）（或多晶硅棒（11））。

4. 发明申请

US20140134832A1 POLYCRYSTALLINE SILICON MANUFACTURING APPARATUS AND POLYCRYSTALLINE SILICON MANUFACTURING METHOD 有权
标题翻译：多晶硅制造设备和多晶硅制造方法
公开(公告)号：US20140134832A1
公开(公告)日：2014-05-15
申请号：US14130627
申请日：2012-09-20
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Yasushi Kurosawa , Shigeyoshi Netsu , Naruhiro Hoshino
IPC分类号： H01L21/02 , C23C16/24
CPC分类号： H01L21/02595 , C01B33/035 , C23C16/24 , C23C16/4418 , H01L21/02532
摘要： In order to obtain a polycrystalline silicon rod having an excellent shape, the placement relation between a source gas supplying nozzle 9 and metal electrodes 10 that are provided in a reactor is appropriately designed. The area of a disc-like base plate 5 is S0. An imaginary concentric circle C (radius c) centered at the center of the disc-like base plate 5 has an area S=S0/2. Further, a concentric circle A and a concentric circle B are imaginary concentric circles having the same center as that of the concentric circle C and having a radius a and a radius b, respectively (a
摘要翻译：为了获得具有优异形状的多晶硅棒，适当地设计了设置在反应器中的源气体供给喷嘴9和金属电极10之间的配置关系。盘状基板5的面积为S0。以盘状基板5的中心为中心的虚拟同心圆C（半径c）的面积S = S0 / 2。此外，同心圆A和同心圆B是具有与同心圆C相同中心的虚拟同心圆，分别具有半径a和半径b（a

5. 发明申请

US20210285099A1 METHOD FOR PREVENTING CONTAMINATION OF BASE PLATE 有权
公开(公告)号：US20210285099A1
公开(公告)日：2021-09-16
申请号：US17187963
申请日：2021-03-01
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Tetsuro OKADA , Naruhiro Hoshino , Masahiko Ishida
IPC分类号： C23C16/44 , C01B33/035 , C23C16/24
摘要： A method for preventing contamination of a base plate having a step of, after producing polycrystalline silicon in a reactor having the base plate and a lid covering the base plate, removing the lid from the base plate; and a step of isolating space including the base plate by an isolation device.

6. 发明申请

US20200263293A1 APPARATUS FOR PRODUCING POLYCRYSTALLINE SILICON AND POLYCRYSTALLINE SILICON 审中-公开
公开(公告)号：US20200263293A1
公开(公告)日：2020-08-20
申请号：US16787274
申请日：2020-02-11
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Tetsuro Okada , Naruhiro Hoshino , Masahiko Ishida
IPC分类号： C23C16/24 , C01B33/035 , C23C16/458 , C23C16/50
摘要： An apparatus for producing polycrystalline silicon by the Siemens method, includes: a carbon-made core wire holder 14 holding a silicon core wire 13; an electrode portion 10 energizing the core wire holder 14, the electrode portion 10 having a top end 18 in contact with a bottom end of the core wire holder 14; and a first screwing section provided 17a only around a lower part of the core wire holder 14 to be fixed to the electrode portion 10, wherein the core wire holder 14 has a contact surface with the top end 18 of the electrode portion 10, the contact surface being lower in electric resistance than an area of the first screwing section 17a to be fastened.

7. 发明申请

US20200231450A1 POLYCRYSTALLINE SILICON BAR, POLYCRYSTALLINE SILICON ROD, AND MANUFACTURING METHOD THEREOF 审中-公开
公开(公告)号：US20200231450A1
公开(公告)日：2020-07-23
申请号：US16716825
申请日：2019-12-17
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Naruhiro Hoshino , Tetsuro Okada , Masahiko Ishida
IPC分类号： C01B33/035
摘要： In a step of performing cylindrical grinding of a polycrystalline silicon bar 10 grown by a Siemens method, this cylindrical grinding step is performed such that a polycrystalline silicon rod 30, whose center axis CR is shifted from a center axis C0 of a silicon core wire 20 by 2 mm or more, is manufactured.

8. 发明申请

US20190002295A1 REACTOR FOR POLYCRYSTALLINE SILICON PRODUCTION AND METHOD FOR PRODUCING POLYCRYSTALLINE SILICON 审中-公开
公开(公告)号：US20190002295A1
公开(公告)日：2019-01-03
申请号：US15741356
申请日：2016-07-25
申请人： SHIN-ETSU CHEMICAL CO., LTD.
发明人： Yasushi Kurosawa , Shigeyoshi Netsu , Naruhiro Hoshino
IPC分类号： C01B33/035 , C23C16/24
摘要： A reactor 200 according to the present invention includes a heater storage section serving as a space section capable of accommodating a carbon heater to initial heating of silicon core wires. A carbon heater 13 is loaded in a deposition reaction space 20 in the reactor 200 only when necessary for initial heating of silicon core wires 12. After initial heating of the silicon core wires 12 is finished, the carbon heater 13 is unloaded from the deposition reaction space to the heater storage section 30. As a result, the carbon heater 13 is not unduly damaged in the reactor any longer and its deterioration is reduced. In addition, because of reduction in reaction with hydrogen gas in the reactor, the generation of methane is reduced, and thus carbon contamination of polycrystalline silicon is reduced.

9. 发明申请

US20180105950A1 POLYCRYSTALLINE SILICON INGOT, POLYCRYSTALLINE SILICON BAR, AND METHOD FOR PRODUCING SINGLE CRYSTAL SILICON 审中-公开
公开(公告)号：US20180105950A1
公开(公告)日：2018-04-19
申请号：US15785895
申请日：2017-10-17
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shuichi Miyao , Shigeyoshi Netsu , Naruhiro Hoshino , Tetsuro Okada
IPC分类号： C30B13/34 , C30B29/06
摘要： A polycrystalline silicon ingot having a value of Te−Ts, ΔT, of 50° C. or less, wherein Ts and Te are the onset temperature and the completion temperature of melting, respectively, when the temperature is increased at a rate of 60° C./minute or less in the temperature range of 1400° C. or more is used as the production raw material for single crystal silicon. The present invention provides a polycrystalline silicon ingot or polycrystalline silicon rod suitable for stably producing single crystal silicon.

10. 发明申请

US20150037516A1 POLYCRYSTALLINE SILICON ROD MANUFACTURING METHOD 审中-公开
标题翻译：多晶硅制造方法
公开(公告)号：US20150037516A1
公开(公告)日：2015-02-05
申请号：US14379429
申请日：2013-02-19
申请人： Shin-Etsu Chemical Co., Ltd.
发明人： Shigeyoshi Netsu , Yasushi Kurosawa , Naruhiro Hoshino
IPC分类号： C23C16/46 , C23C16/50 , C23C16/52 , C23C16/24
CPC分类号： C23C16/46 , C01B33/035 , C23C16/24 , C23C16/4418 , C23C16/50 , C23C16/52
摘要： Switches (S1-S3) allow switching between parallel/series configuration in a circuit (16) provided between two pairs of U-shaped silicon cores (12) arranged in a bell jar (1). In the circuit (16), current is supplied from one low-frequency power source (15L) supplying a low-frequency current, or from one high-frequency power source (15H) supplying a variable-frequency, high-frequency power source is used high-frequency current having a frequency of not less than 2 kHz. The two pairs of U-shaped silicon cores (12) are connected to each other in series by closing the switch (S1) and opening the switches (S2 and S3), and when the switch (S4) is switched to the side of the high-frequency power source (15H), and electric heating of the silicon cores (12) can be performed by supplying a high-frequency current having a frequency of less than 2 kHz to the series-connected U-shaped silicon cores (12) (or polycrystalline silicon rods (11)).
摘要翻译：开关（S1-S3）允许在布置在钟罩（1）中的两对U形硅芯（12）之间提供的电路（16）中的并联/串联配置之间进行切换。在电路（16）中，从供给低频电流的一个低频电源（15L）或者提供供给可变频率的高频电源的一个高频电源（15H）提供电流，使用频率不小于2kHz的高频电流。通过闭合开关（S1）并打开开关（S2和S3），两对U形硅芯（12）彼此串联连接，并且当开关（S4）切换到高频电源（15H）和硅芯（12）的电加热可以通过向串联的U形硅芯（12）提供具有小于2kHz的频率的高频电流来执行，（或多晶硅棒（11））。

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