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1. 发明申请

US20110295051A1 METHOD AND REACTOR FOR CRACKING HYDROCARBON 有权
标题翻译：破碎烃的方法与反应器
公开(公告)号：US20110295051A1
公开(公告)日：2011-12-01
申请号：US13115610
申请日：2011-05-25
申请人： Shizhong WANG , Wenqing Peng , Qijia Fu , Zhigang Deng , Zhaoping Wu , Chuan Lin , Yanfei Gu , Xiao Zhang , Lawrence Bernard Kool
发明人： Shizhong WANG , Wenqing Peng , Qijia Fu , Zhigang Deng , Zhaoping Wu , Chuan Lin , Yanfei Gu , Xiao Zhang , Lawrence Bernard Kool
IPC分类号： C07C4/02 , B01J19/00 , C10G71/00
CPC分类号： C10G9/203 , B01J19/0026 , B01J19/02 , B01J19/2425 , B01J23/002 , B01J2219/00245 , B01J2219/0218 , B01J2219/0263 , B01J2219/0286 , C04B35/505 , C04B35/62222 , C04B2235/3215 , C04B2235/3225 , C04B2235/3229 , C04B2235/3248 , C04B2235/79 , C07C4/04 , C10G9/16 , C10G9/18 , C10G9/36 , C10G2300/1033 , C10G2300/1044 , C10G2300/1059 , C10G2300/107 , C10G2300/1074 , C10G2300/1077 , C10G2300/1081 , C10G2300/807 , C10G2400/20
摘要： A method for cracking hydrocarbon, comprises: providing steam and hydrocarbon; and feeding steam and hydrocarbon into a reactor accessible to hydrocarbon and comprising a perovskite material of formula AaBbCcDdO3-δ, wherein 0
摘要翻译：一种裂解烃的方法，包括：提供蒸汽和烃; 并将蒸气和烃进料到可接近烃的反应器中，并且包含式AaBbCcDdO3-δ的钙钛矿材料，其中0

2. 发明授权

US09499747B2 Method and reactor for cracking hydrocarbon 有权
标题翻译：碳氢化合物裂解方法和反应器
公开(公告)号：US09499747B2
公开(公告)日：2016-11-22
申请号：US13115610
申请日：2011-05-25
申请人： Shizhong Wang , Wenqing Peng , Qijia Fu , Zhigang Deng , Zhaoping Wu , Chuan Lin , Yanfei Gu , Xiao Zhang , Lawrence Bernard Kool
发明人： Shizhong Wang , Wenqing Peng , Qijia Fu , Zhigang Deng , Zhaoping Wu , Chuan Lin , Yanfei Gu , Xiao Zhang , Lawrence Bernard Kool
IPC分类号： C07C4/02 , C07C4/06 , C07C5/32 , C10G71/00 , C10G9/20 , B01J19/00 , B01J19/02 , B01J19/24 , C10G9/18 , B01J23/00
CPC分类号： C10G9/203 , B01J19/0026 , B01J19/02 , B01J19/2425 , B01J23/002 , B01J2219/00245 , B01J2219/0218 , B01J2219/0263 , B01J2219/0286 , C04B35/505 , C04B35/62222 , C04B2235/3215 , C04B2235/3225 , C04B2235/3229 , C04B2235/3248 , C04B2235/79 , C07C4/04 , C10G9/16 , C10G9/18 , C10G9/36 , C10G2300/1033 , C10G2300/1044 , C10G2300/1059 , C10G2300/107 , C10G2300/1074 , C10G2300/1077 , C10G2300/1081 , C10G2300/807 , C10G2400/20
摘要： A method for cracking hydrocarbon, comprises: providing steam and hydrocarbon; and feeding steam and hydrocarbon into a reactor accessible to hydrocarbon and comprising a perovskite material of formula AaBbCcDdO3-δ, wherein 0
摘要翻译：一种裂解烃的方法，包括：提供蒸汽和烃; 并将蒸气和烃进料到可接近烃的反应器中，并且包含式AaBbCcDdO3-δ的钙钛矿材料，其中0

3. 发明申请

US20130267750A1 METHOD AND REACTOR FOR CRACKING HYDROCARBON AND METHOD FOR COATING THE REACTOR 有权
标题翻译：用于裂化烃的方法和反应器以及用于涂覆反应器的方法
公开(公告)号：US20130267750A1
公开(公告)日：2013-10-10
申请号：US13996738
申请日：2011-12-05
申请人： Yanfei Gu , Wenqing Peng , Shizhong Wang , Chuan Lin , Lawrence Bernard Kool , Zhaoping Wu , Qijia Fu , Zhigang Deng
发明人： Yanfei Gu , Wenqing Peng , Shizhong Wang , Chuan Lin , Lawrence Bernard Kool , Zhaoping Wu , Qijia Fu , Zhigang Deng
IPC分类号： C10B43/14
CPC分类号： C10B43/14 , C10G9/16 , C10G2300/1044 , C10G2300/1059 , C10G2300/807 , C10G2400/20
摘要： A reactor has an inner surface accessible to the hydrocarbon and comprising a sintered product of at least one of cerium oxide, zinc oxide, tin oxide, zirconium oxide, boehmite and silicon dioxide, and a perovskite material of formula AaBbCcDdO3-δ. 0
摘要翻译：反应器具有可接近烃的内表面，并且包括氧化铈，氧化锌，氧化锡，氧化锆，勃姆石和二氧化硅中的至少一种的烧结产物和式AaBbCcDdO3-δ的钙钛矿材料。 0

4. 发明授权

US09850432B2 Method and reactor for cracking hydrocarbon and method for coating the reactor 有权
公开(公告)号：US09850432B2
公开(公告)日：2017-12-26
申请号：US13996738
申请日：2011-12-05
申请人： Yanfei Gu , Wenqing Peng , Shizhong Wang , Chuan Lin , Lawrence Bernard Kool , Zhaoping Wu , Qijia Fu , Zhigang Deng
发明人： Yanfei Gu , Wenqing Peng , Shizhong Wang , Chuan Lin , Lawrence Bernard Kool , Zhaoping Wu , Qijia Fu , Zhigang Deng
IPC分类号： C10B43/14 , C10G9/16
CPC分类号： C10B43/14 , C10G9/16 , C10G2300/1044 , C10G2300/1059 , C10G2300/807 , C10G2400/20
摘要： A reactor has an inner surface accessible to the hydrocarbon and comprising a sintered product of at least one of cerium oxide, zinc oxide, tin oxide, zirconium oxide, boehmite and silicon dioxide, and a perovskite material of formula AaBbCcDdO3-δ. 0

5. 发明申请

US20110319690A1 METHOD FOR CONVERTING CARBON AND HYDROCARBON CRACKING AND APPARATUS FOR HYDROCARBON CRACKING 有权
标题翻译：用于碳氢化合物和碳氢化合物开裂的方法和用于油气开裂的装置
公开(公告)号：US20110319690A1
公开(公告)日：2011-12-29
申请号：US13101171
申请日：2011-05-05
申请人： Zhigang Deng , Wenqing Peng , Chuan Lin , Shizhong Wang , Qijia Fu , Yanfei Gu , Zhaoping Wu , Yangang Liang , Minggang She
发明人： Zhigang Deng , Wenqing Peng , Chuan Lin , Shizhong Wang , Qijia Fu , Yanfei Gu , Zhaoping Wu , Yangang Liang , Minggang She
IPC分类号： C07C4/04 , B01J19/08 , C10G9/00
CPC分类号： C10G9/00 , B01J19/24 , B01J2219/00245 , B01J2219/24 , C01B31/18 , C01B31/20 , C01B32/40 , C01B32/50 , C10G9/12 , C10G9/36 , C10G75/00 , C10G2300/1044 , C10G2300/1059 , C10G2300/1081 , C10G2300/807 , C10G2400/20
摘要： A method for converting carbon into a carbon oxide, comprises: contacting carbon with steam in presence of a carnegieite-like material of formula (Na2O)xNa[Al2Si2O8], wherein 0
摘要翻译：一种将碳转化为碳氧化物的方法，包括：在碳酸钙样物质（Na 2 O）x Na [Al 2 Si 2 O 8]存在下使碳与蒸汽接触，其中0

6. 发明授权

US09074147B2 Method for converting carbon and hydrocarbon cracking and apparatus for hydrocarbon cracking 有权
标题翻译：碳和碳氢化合物裂解转化方法及烃裂解装置
公开(公告)号：US09074147B2
公开(公告)日：2015-07-07
申请号：US13101171
申请日：2011-05-05
申请人： Zhigang Deng , Wenqing Peng , Chuan Lin , Shizhong Wang , Qijia Fu , Yanfei Gu , Zhaoping Wu , Yangang Liang , Minggang She
发明人： Zhigang Deng , Wenqing Peng , Chuan Lin , Shizhong Wang , Qijia Fu , Yanfei Gu , Zhaoping Wu , Yangang Liang , Minggang She
IPC分类号： C10G9/00 , C10G9/12 , C10G9/16 , C10G75/00 , C01B31/18 , C01B31/20 , C10G9/36 , C07C4/04 , B01J19/00
CPC分类号： C10G9/00 , B01J19/24 , B01J2219/00245 , B01J2219/24 , C01B31/18 , C01B31/20 , C01B32/40 , C01B32/50 , C10G9/12 , C10G9/36 , C10G75/00 , C10G2300/1044 , C10G2300/1059 , C10G2300/1081 , C10G2300/807 , C10G2400/20
摘要： A method for converting carbon into a carbon oxide, comprises: contacting carbon with steam in presence of a carnegieite-like material of formula (Na2O)xNa2[Al2Si2O8], wherein 0
摘要翻译：一种将碳转化为碳氧化物的方法，包括：在碳酸钾类物质（Na 2 O）x Na 2 [Al 2 Si 2 O 8]存在下使碳与蒸汽接触，其中0

7. 发明申请

US20070077700A1 Capacitance process using passivation film scheme 有权
标题翻译：电容工艺采用钝化膜方案
公开(公告)号：US20070077700A1
公开(公告)日：2007-04-05
申请号：US11634580
申请日：2006-12-06
申请人： Chuan Lin , James Chiu
发明人： Chuan Lin , James Chiu
IPC分类号： H01L21/8242 , H01L21/20 , H01L21/311
CPC分类号： H01L28/40 , H01L23/5223 , H01L23/5256 , H01L2924/0002 , H01L2924/00
摘要： In accordance with the objectives of the invention a new method and structure is provided for the creation of a capacitor. A contact pad and a lower capacitor plate have been provided over a substrate. Under the first embodiment of the invention, a layer of etch stop material, serving as the capacitor dielectric is deposited after which a triple layer of passivation is created over a substrate. The compound passivation layer is first etched, using a fuse mask, to define and expose the capacitor dielectric and a fuse area after which the passivation layer is second etched to define and expose the contact pad. A layer of AlCu is then deposited, patterned and etched to create a capacitor upper plate and a contact interconnect over the contact pad. Under a second embodiment of the invention, a triple layer of passivation is created over a layer of etch stop material deposited over a substrate, a contact pad and a lower capacitor plate have been provided over the substrate. The compound passivation layer is first etched to expose the lower capacitor plate. A layer of capacitor dielectric is deposited after which the passivation layer is second etched to expose the contact pad. A layer of AlCu is then deposited, patterned and etched to create an AlCu interconnect over the contact pad and a upper capacitor plate.
摘要翻译：根据本发明的目的，提供了一种用于产生电容器的新方法和结构。接触焊盘和下电容器板已经设置在基板上。在本发明的第一实施例中，沉积用作电容器电介质的一层蚀刻停止材料，之后在衬底上形成三层钝化。首先使用熔丝掩模蚀刻化合物钝化层以限定和暴露电容器电介质和熔融区域，之后第二蚀刻钝化层以限定和暴露接触焊盘。然后沉积，图案化和蚀刻AlCu层，以在接触焊盘上形成电容器上板和接触互连。在本发明的第二实施例中，在沉积在衬底上的蚀刻停止材料层上形成三层钝化，在衬底上提供接触焊盘和下电容器板。首先蚀刻复合钝化层以暴露下电容器板。沉积一层电容电介质，之后第二次蚀刻钝化层以露出接触垫。然后沉积，图案化和蚀刻AlCu层，以在接触焊盘和上电容器板上产生AlCu互连。

8. 发明申请

US20070052002A1 Junction leakage suppression in memory devices 有权
标题翻译：存储器件中的结漏电抑制
公开(公告)号：US20070052002A1
公开(公告)日：2007-03-08
申请号：US11152375
申请日：2005-06-15
申请人： Shibly Ahmed , Jun Kang , Hsiao-Han Thio , Imran Khan , Dong-Hyuk Ju , Chuan Lin
发明人： Shibly Ahmed , Jun Kang , Hsiao-Han Thio , Imran Khan , Dong-Hyuk Ju , Chuan Lin
IPC分类号： H01L29/788
CPC分类号： H01L29/66833 , H01L27/11521 , H01L27/11568 , H01L29/7885 , H01L29/792
摘要： A memory device includes a substrate and source and drain regions formed in the substrate. The source and drain regions include both phosphorous and arsenic and the phosphorous may be implanted prior to the arsenic. The memory device also includes a first dielectric layer formed over the substrate and a charge storage element formed over the first dielectric layer. The memory device may further include a second dielectric layer formed over the charge storage element and a control gate formed over the second dielectric layer.
摘要翻译：存储器件包括衬底和形成在衬底中的源区和漏区。源极和漏极区域包括磷和砷，并且磷可以在砷之前被植入。存储器件还包括形成在衬底上的第一电介质层和形成在第一介电层上的电荷存储元件。存储器件还可以包括形成在电荷存储元件上的第二电介质层和形成在第二介电层上的控制栅极。

9. 发明申请

US20060268523A1 Heat sink for memory 审中-公开
标题翻译：用于记忆的散热器
公开(公告)号：US20060268523A1
公开(公告)日：2006-11-30
申请号：US11184877
申请日：2005-07-20
申请人： Chuan Lin
发明人： Chuan Lin
IPC分类号： H05K7/20
CPC分类号： H01L23/4006 , G06F1/20 , H01L23/367 , H01L2023/405 , H01L2023/4056 , H01L2023/4062 , H01L2924/0002 , H01L2924/00
摘要： This invention relates to an improved heat sink for memory, it comprising of two clamp pieces and a fixing plug, especially, the two clamp pieces are symmetrical to each other, there are all kinds of dented and bumped interleaved special marks installed on their outer surfaces along flow field direction, moreover, corresponding dented and protruding pivoting parts are installed at two sides of one side of their corresponding inner surfaces, through the two dented and protruding pivoting parts and the fixing plug to penetrate and lock them, an inverted U shape heat sink structure is thus formed; therefore, when is in use, in addition to possessing easy and convenient assembly, there is no need to have the assistance from other support tool for the assembly of the heat sink and memory in the production line, it is only needed to embed the memory and touch it all the way to the lower ends of the dented and protruding pivoting parts to achieve accurate positioning function, meanwhile, the two clamp pieces will not get distorted, they can limit the memory to perform movement only in single direction, therefore, heat sink and memory can accurately touch and position each other to achieve good heat dissipating effect and to have the heat dissipating efficiency enhanced.
摘要翻译：本发明涉及一种用于存储器的改进的散热器，其包括两个夹片和固定插头，特别地，两个夹具彼此对称，在其外表面上安装有各种凹陷和凸起的交错的特殊标记沿着流场方向，相应的凹入和突出的枢转部分安装在其相应内表面一侧的两侧，通过两个凹进和突出的枢转部分和固定塞将其穿透和锁定，倒U形热这样形成了水槽结构; 因此，当使用时，除了具有简单和方便的组装之外，不需要其他支持工具的帮助来组装散热器和存储器在生产线中，仅需要嵌入存储器并将其一直碰到凹凸突出部分的下端，以实现精确的定位功能，同时两个夹具不会变形，可以限制记忆体在单一方向上进行运动，因此热量水槽和存储器可以准确地相互接触并相互定位以获得良好的散热效果并且提高散热效率。

10. 发明申请

US20050224786A1 Microelectronic device with depth adjustable sill and method of fabrication thereof 有权
标题翻译：具有深度可调门槛的微电子器件及其制造方法
公开(公告)号：US20050224786A1
公开(公告)日：2005-10-13
申请号：US10819250
申请日：2004-04-06
申请人： Chuan Lin , Wen Lee , Sun Chang , Shien Wu
发明人： Chuan Lin , Wen Lee , Sun Chang , Shien Wu
IPC分类号： H01L21/223 , H01L21/336 , H01L21/8234 , H01L29/786 , H01L31/109
CPC分类号： H01L29/785 , H01L21/2236 , H01L21/823412 , H01L29/6659 , H01L29/66795 , H01L29/78687
摘要： A microelectronic device includes a substrate, and a patterned feature located over the substrate and a plurality of doped regions, wherein the patterned feature includes at least one electrode. The microelectronic device includes at least one sill region for the enhancement of electron and/or hole mobility.
摘要翻译：微电子器件包括衬底和位于衬底上的图案化特征和多个掺杂区域，其中图案化特征包括至少一个电极。微电子器件包括用于增强电子和/或空穴迁移率的至少一个基底区域。

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