专利快速检索-快速检索全球专利，免费商用专利数据库-IPRDB

1. 发明申请

US20090283039A1 ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
标题翻译：大功率流量远程等离子体源的稳健出口
公开(公告)号：US20090283039A1
公开(公告)日：2009-11-19
申请号：US12467477
申请日：2009-05-18
申请人： JOHN M. WHITE , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
发明人： JOHN M. WHITE , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
IPC分类号： C23C16/54 , F28D7/00
CPC分类号： F28D7/00 , C23C16/4405 , F28D2021/0078 , F28F9/26
摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.
摘要翻译：本发明通常包括组件之间的联接。当点燃离开处理室的等离子体时，反应气体离子可通过许多部件行进到处理室。反应气体离子可能相当热，并导致各种部件变得非常热，因此，装置部件之间的密封可能失效。因此，冷却反应气体离子可以通过其移动的任何金属组分可能是有益的。然而，在冷却的金属组分和陶瓷组分之间的界面处，由于反应气体离子的热量和金属组分的冷却，陶瓷组分可能经历足以破坏陶瓷材料的温度梯度。因此，将金属部件的凸缘延伸到陶瓷部件中可以减小界面处的温度梯度并减少陶瓷部件的开裂。

2. 发明申请

US20090007846A1 DIFFUSER GRAVITY SUPPORT 有权
标题翻译： DIFFUSER GRAVITY支持
公开(公告)号：US20090007846A1
公开(公告)日：2009-01-08
申请号：US12234359
申请日：2008-09-19
申请人： ERNST KELLER , John M. White , Robin L. Tiner , Jiri Kucera , Soo Young Choi , Beom Soo Park , Michael Starr
发明人： ERNST KELLER , John M. White , Robin L. Tiner , Jiri Kucera , Soo Young Choi , Beom Soo Park , Michael Starr
IPC分类号： C23C16/00
CPC分类号： H01J37/3244 , C23C16/45565
摘要： An apparatus and method for supporting a substantial center portion of a gas distribution plate is disclosed. At least one support member is capable of engaging and disengaging the diffuser with a mating connection without prohibiting flow of a gas or gases through the diffuser and is designed to provide vertical suspension to a diffuser that is supported at its perimeter, or capable of supporting the diffuser without a perimeter support. In one aspect, the at least one support member is a portion of a gas delivery conduit and in another embodiment is a plurality of support members separated from the gas delivery conduit. The at least one support member is capable of translating vertical lift, or vertical compression to a center area of the diffuser. A method and apparatus for controlling gas flow from the gas delivery conduit to the gas distribution plate is also disclosed.
摘要翻译：公开了一种用于支撑气体分布板的大部分中心部分的装置和方法。至少一个支撑构件能够通过配合连接件接合和分离扩散器，而不阻止气体或气体流过扩散器，并且被设计成向在其周边支撑的扩散器提供垂直悬架，或者能够支撑扩散器没有周界支撑。在一个方面，所述至少一个支撑构件是气体输送导管的一部分，并且在另一个实施例中是与气体输送导管分离的多个支撑构件。至少一个支撑构件能够将垂直升降或垂直压缩平移到扩散器的中心区域。还公开了一种用于控制从气体输送管道到气体分配板的气流的方法和装置。

3. 发明申请

US20080187682A1 PREVENTION OF FILM DEPOSITION ON PECVD PROCESS CHAMBER WALL 有权
标题翻译：防止膜电沉积在PECVD工艺室壁上
公开(公告)号：US20080187682A1
公开(公告)日：2008-08-07
申请号：US11955575
申请日：2007-12-13
申请人： Beom Soo Park , Robin L. Tiner , Soo Young Choi , John M. White
发明人： Beom Soo Park , Robin L. Tiner , Soo Young Choi , John M. White
IPC分类号： C23C16/513 , C23C16/00
CPC分类号： C23C16/4401 , C23C16/5096 , H01J37/32623 , H01J37/32697
摘要： A method and apparatus for processing a substrate are provided. The chamber body comprises a chamber bottom and a sidewall having a slit valve. A substrate support comprising a support body is disposed in the chamber body. A first end of at least one wide RF ground strap is coupled with the support body and a second end of at least one RF ground strap is coupled with the chamber bottom. At least one extension bar is positioned along a peripheral edge of the support body. The method comprises providing a processing chamber having a slit valve and a substrate support, providing RF power to a distribution plate disposed over the substrate support, flowing gas through the distribution plate, plasma processing a substrate disposed on the substrate support, and reducing the generation of plasma adjacent to the slit valve.
摘要翻译：提供了一种用于处理衬底的方法和设备。腔室主体包括腔室底部和具有狭缝阀的侧壁。包括支撑体的基板支撑件设置在室主体中。至少一个宽RF接地带的第一端与支撑体耦合，并且至少一个RF接地带的第二端与腔室底部联接。至少一个延伸杆沿着支撑体的外围边缘定位。该方法包括提供具有狭缝阀和衬底支撑件的处理室，向布置在衬底支撑件上方的分配板提供RF功率，使气体流过分布板，等离子体处理设置在衬底支架上的衬底，并减少发电的等离子体。

4. 发明授权

US10676817B2 Flip edge shadow frame 有权
公开(公告)号：US10676817B2
公开(公告)日：2020-06-09
申请号：US13569064
申请日：2012-08-07
申请人： Qunhua Wang , Soo Young Choi , Robin L. Tiner , John M. White , Gaku Furuta , Beom Soo Park
发明人： Qunhua Wang , Soo Young Choi , Robin L. Tiner , John M. White , Gaku Furuta , Beom Soo Park
IPC分类号： C23C16/04 , C23C16/458 , C23C14/04
摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.

5. 发明申请

US20130140009A1 ROBUST OUTLET PLUMBING FOR HIGH POWER FLOW REMOTE PLASMA SOURCE 审中-公开
公开(公告)号：US20130140009A1
公开(公告)日：2013-06-06
申请号：US13722637
申请日：2012-12-20
申请人： John M. White , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
发明人： John M. White , Soo Young Choi , Beom Soo Park , Gaku Furuta , Young Jin Choi , Robin L. Tiner
IPC分类号： F28D7/00
CPC分类号： F28D7/00 , C23C16/4405 , F28D2021/0078 , F28F9/26
摘要： The present invention generally includes a coupling between components. When igniting a plasma remote from a processing chamber, the reactive gas ions may travel to the processing chamber through numerous components. The reactive gas ions may be quite hot and cause the various components to become very hot and thus, the seals between apparatus components may fail. Therefore, it may be beneficial to cool any metallic components through which the reactive gas ions may travel. However, at the interface between the cooled metallic component and a ceramic component, the ceramic component may experience a temperature gradient sufficient to crack the ceramic material due to the heat of the reactive gas ions and the coolness of the metallic component. Therefore, extending a flange of the metallic component into the ceramic component may lessen the temperature gradient at the interface and reduce cracking of the ceramic component.

6. 发明授权

US08083853B2 Plasma uniformity control by gas diffuser hole design 有权
标题翻译：通过气体扩散器孔设计的等离子体均匀性控制
公开(公告)号：US08083853B2
公开(公告)日：2011-12-27
申请号：US10889683
申请日：2004-07-12
申请人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
发明人： Soo Young Choi , John M. White , Qunhua Wang , Li Hou , Ki Woon Kim , Shinichi Kurita , Tae Kyung Won , Suhail Anwar , Beom Soo Park , Robin L. Tiner
IPC分类号： C23C16/00 , C23C16/455 , H01L21/3065
CPC分类号： H01J37/3244 , C23C16/345 , C23C16/455 , C23C16/45565 , C23C16/5096 , H01J37/32082 , H01J37/32091 , H01J37/32541 , H01J37/32596 , H01J2237/327 , H01J2237/3321 , H01J2237/3323 , H01J2237/3325 , Y10T29/49885 , Y10T29/49996
摘要： Embodiments of a gas diffuser plate for distributing gas in a processing chamber are provided. The gas distribution plate includes a diffuser plate having an upstream side and a downstream side, and a plurality of gas passages passing between the upstream and downstream sides of the diffuser plate. The gas passages include hollow cathode cavities at the downstream side to enhance plasma ionization. The depths, the diameters, the surface area and density of hollow cathode cavities of the gas passages that extend to the downstream end can be gradually increased from the center to the edge of the diffuser plate to improve the film thickness and property uniformity across the substrate. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can be created by bending the diffuser plate toward downstream side, followed by machining out the convex downstream side. Bending the diffuser plate can be accomplished by a thermal process or a vacuum process. The increasing diameters, depths and surface areas from the center to the edge of the diffuser plate can also be created computer numerically controlled machining. Diffuser plates with gradually increasing diameters, depths and surface areas of the hollow cathode cavities from the center to the edge of the diffuser plate have been shown to produce improved uniformities of film thickness and film properties.
摘要翻译：提供了用于在处理室中分配气体的气体扩散板的实施例。气体分配板包括具有上游侧和下游侧的扩散板，以及在扩散板的上游侧和下游侧之间通过的多个气体通路。气体通道包括在下游侧的中空阴极腔，以增强等离子体电离。延伸到下游端的气体通道的空心阴极腔的深度，直径，表面积和密度可以从扩散板的中心到边缘逐渐增加，以改善衬底上的膜厚度和性能均匀性。从扩散板的中心到边缘的直径，深度和表面积的增加可以通过向下游侧弯曲扩散板，然后在凸出的下游侧加工出来。扩散板的弯曲可以通过热处理或真空工艺来实现。从扩散板的中心到边缘的直径，深度和表面积的增加也可以用计算机数字控制加工。具有从扩散板的中心到边缘的中空阴极腔的直径逐渐增加，深度和表面积逐渐增大的扩散板已被证明可以产生改善的膜厚度和膜性质的均匀性。

7. 发明申请

US20090258162A1 PLASMA PROCESSING APPARATUS AND METHOD 审中-公开
标题翻译：等离子体加工设备和方法
公开(公告)号：US20090258162A1
公开(公告)日：2009-10-15
申请号：US12422183
申请日：2009-04-10
申请人： GAKU FURUTA , Young-Jin Choi , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Robin L. Tiner
发明人： GAKU FURUTA , Young-Jin Choi , Soo Young Choi , Beom Soo Park , John M. White , Suhail Anwar , Robin L. Tiner
IPC分类号： C23C16/44 , C23C16/00 , H05H1/24
CPC分类号： H01J37/32357 , C23C16/4405 , C23C16/507 , H01J37/3244 , H01J2237/3321
摘要： The present invention generally includes a plasma enhanced chemical vapor deposition (PECVD) processing chamber having an RF power source coupled to the backing plate at a location separate from the gas source. By feeding the gas into the processing chamber at a location separate from the RF power, parasitic plasma formation in the gas tubes leading to the processing chamber may be reduced. The gas may be fed to the chamber at a plurality of locations. At each location, the gas may be fed to the processing chamber from the gas source by passing through a remote plasma source as well as an RF choke or RF resistor.
摘要翻译：本发明通常包括等离子体增强化学气相沉积（PECVD）处理室，其具有在与气源分开的位置处连接到背板的RF功率源。通过在与RF功率分开的位置处将气体供给到处理室中，可以减少通向处理室的气体管中的寄生等离子体形成。气体可以在多个位置被供给到腔室。在每个位置，气体可以通过远程等离子体源以及RF扼流器或RF电阻器从气体源馈送到处理室。

8. 发明申请

US20090064934A1 SOURCE GAS FLOW PATH CONTROL IN PECVD SYSTEM TO CONTROL A BY-PRODUCT FILM DEPOSITION ON INSIDE CHAMBER 有权
标题翻译： PECVD系统中的源气体流路控制，用于控制室内副产物膜沉积
公开(公告)号：US20090064934A1
公开(公告)日：2009-03-12
申请号：US12205363
申请日：2008-09-05
申请人： BEOM SOO PARK , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
发明人： BEOM SOO PARK , Young Jin Choi , Robin L. Tiner , Sam H. Kim , Soo Young Choi , John M. White , Dong-Kil Yim
IPC分类号： C23C16/513
CPC分类号： C23C16/45502 , C23C16/4401
摘要： The present invention generally comprises a method and an apparatus for guiding the flow of processing gases away from chamber walls and slit valve opening. By controlling the flow path of the process gases within a processing chamber, undesirable deposition upon chamber walls and within slit valve openings may be reduced. By reducing deposition in slit valve openings, flaking may be reduced. By reducing deposition on chamber walls, the time between chamber cleaning may be increased. Thus, guiding the flow of processing gases within the processing chamber may increase substrate throughput.
摘要翻译：本发明通常包括一种用于将处理气体的流动引导离开室壁和狭缝阀开口的方法和装置。通过控制处理室内的处理气体的流动路径，可以减少在室壁上和狭缝阀开口内的不期望的沉积。通过减少狭缝阀开口中的沉积，可能会降低剥落。通过减少室壁上的沉积，可以增加室清洁之间的时间。因此，引导处理室内的处理气体的流动可以增加衬底生产量。

9. 发明授权

US08853098B2 Substrate support with gas introduction openings 有权
标题翻译：衬底支撑与气体导入孔
公开(公告)号：US08853098B2
公开(公告)日：2014-10-07
申请号：US13401755
申请日：2012-02-21
申请人： Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
发明人： Sam H. Kim , John M. White , Soo Young Choi , Carl A. Sorensen , Robin L. Tiner , Beom Soo Park
IPC分类号： H01L21/00 , H01L21/44 , H01L21/31 , H01L21/469 , H01L21/687 , H01L21/683
CPC分类号： H01L21/68742 , H01L21/6831
摘要： Embodiments disclosed herein generally relate to an apparatus and a method for placing a substrate substantially flush against a substrate support in a processing chamber. When a large area substrate is placed onto a substrate support, the substrate may not be perfectly flush against the substrate support due to gas pockets that may be present between the substrate and the substrate support. The gas pockets can lead to uneven deposition on the substrate. Therefore, pulling the gas from between the substrate and the support may pull the substrate substantially flush against the support. During deposition, an electrostatic charge can build up and cause the substrate to stick to the substrate support. By introducing a gas between the substrate and the substrate support, the electrostatic forces may be overcome so that the substrate can be separated from the susceptor with less or no plasma support which takes extra time and gas.
摘要翻译：本文公开的实施例通常涉及用于将衬底基本上与衬底支撑件齐平地放置在处理室中的装置和方法。当将大面积基板放置在基板支撑件上时，由于可能存在于基板和基板支撑件之间的气体袋，基板可能不能完全与基板支撑件齐平。气袋可导致基板上的不均匀沉积。因此，从衬底和支撑件之间拉动气体可以将衬底基本上与支撑件齐平。在沉积期间，静电电荷可能积聚并使衬底粘附到衬底支撑件上。通过在衬底和衬底支撑件之间引入气体，可以克服静电力，使得衬底可以用较少或不需要额外时间和气体的等离子体支架与基座分离。

10. 发明申请

US20130263782A1 FLIP EDGE SHADOW FRAME 审中-公开
标题翻译：卷边边框
公开(公告)号：US20130263782A1
公开(公告)日：2013-10-10
申请号：US13569064
申请日：2012-08-07
申请人： QUNHUA WANG , Soo Young Choi , Robin L. Tiner , John M. White , Gaku Furuta , Beom Soo Park
发明人： QUNHUA WANG , Soo Young Choi , Robin L. Tiner , John M. White , Gaku Furuta , Beom Soo Park
IPC分类号： C23C16/04
摘要： Device for processing a substrate are described herein. An apparatus for controlling deposition on a substrate can include a chamber comprising a shadow frame support, a substrate support comprising a substrate supporting surface, a shadow frame with a shadow frame body including a first support surface, a second support surface opposite the first surface, and a detachable lip connected with the shadow frame body. The detachable lip can include a support connection, a first lip surface facing the substrate, a second lip surface opposite the first lip surface, a first edge positioned over the first support surface, and a second edge opposite the first edge to contact the substrate.
摘要翻译：本文描述了用于处理衬底的装置。用于控制基板上的沉积的装置可以包括：腔室，其包括阴影框架支撑件，包括基板支撑表面的基板支撑件，具有包括第一支撑表面的阴影框架主体的阴影框架，与第一表面相对的第二支撑表面，以及与阴影框体连接的可拆卸唇缘。可拆卸唇缘可以包括支撑连接，面向基底的第一唇缘表面，与第一唇缘表面相对的第二唇缘表面，位于第一支撑表面上方的第一边缘以及与第一边缘相对的第二边缘以接触基底。

你已经成功收藏专利！

检索式保存成功!

IPRDB

热门服务

关于我们

友情链接

联系方式