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1. 发明申请

US20090169828A1 PULSED GROWTH OF CATALYST-FREE GROWTH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL 有权
标题翻译：无机生长氮化镓纳米管的生长和III族氮化物半导体材料的应用
公开(公告)号：US20090169828A1
公开(公告)日：2009-07-02
申请号：US12399273
申请日：2009-03-06
申请人： Stephen D. Hersee , Xin Wang , Xinyu Sun
发明人： Stephen D. Hersee , Xin Wang , Xinyu Sun
IPC分类号： B32B3/00
CPC分类号： H01L29/413 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B29/60 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02603 , H01L21/02609 , H01L21/02612 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/02642 , H01L29/045 , H01L29/0676 , H01L29/2003 , H01L29/775 , H01L31/0304 , H01L31/035236 , H01L31/184 , H01L33/18 , H01L33/24 , H01L2221/1094 , H01L2924/0002 , H01S5/1042 , H01S5/1835 , H01S5/18369 , H01S5/3428 , Y02E10/544 , Y02P70/521 , Y10S977/762 , Y10S977/816 , Y10T428/24612 , H01L2924/00
摘要： Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.
摘要翻译：示例性实施例提供包括高质量（即，无缺陷）III-N族纳米线和均匀III-N纳米线阵列的半导体器件及其可制造的可扩展工艺，其中位置，取向，横截面特征，长度和可以精确地控制每个纳米线的结晶度。可以使用脉冲生长模式来制造公开的提供约10nm至约1000微米的均匀长度的III-N族纳米线和/或纳米线阵列，其具有恒定的横截面特征，包括约10-1000nm的示例性直径。此外，可以通过聚结多个GaN纳米线和/或纳米线阵列来形成高质量的GaN衬底结构，以便制造可见的LED和激光器。此外，核 - 壳纳米线/ MQW活性结构可以通过在每个纳米线的非极性侧壁上的核 - 壳生长形成。

2. 发明授权

US08039854B2 Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material 有权
标题翻译： GaN纳米线无催化剂生长的脉冲生长和在III族氮化物半导体散装材料中的应用
公开(公告)号：US08039854B2
公开(公告)日：2011-10-18
申请号：US12399273
申请日：2009-03-06
申请人： Stephen D. Hersee , Xin Wang , Xinyu Sun
发明人： Stephen D. Hersee , Xin Wang , Xinyu Sun
IPC分类号： H01L29/205 , H01L33/00
CPC分类号： H01L29/413 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B29/60 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02603 , H01L21/02609 , H01L21/02612 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/02642 , H01L29/045 , H01L29/0676 , H01L29/2003 , H01L29/775 , H01L31/0304 , H01L31/035236 , H01L31/184 , H01L33/18 , H01L33/24 , H01L2221/1094 , H01L2924/0002 , H01S5/1042 , H01S5/1835 , H01S5/18369 , H01S5/3428 , Y02E10/544 , Y02P70/521 , Y10S977/762 , Y10S977/816 , Y10T428/24612 , H01L2924/00
摘要： Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.
摘要翻译：示例性实施例提供包括高质量（即，无缺陷）III-N族纳米线和均匀III-N纳米线阵列的半导体器件及其可制造的可扩展工艺，其中位置，取向，横截面特征，长度和可以精确地控制每个纳米线的结晶度。可以使用脉冲生长模式来制造公开的提供约10nm至约1000微米的均匀长度的III-N族纳米线和/或纳米线阵列，其具有恒定的横截面特征，包括约10-1000nm的示例性直径。此外，可以通过聚结多个GaN纳米线和/或纳米线阵列来形成高质量的GaN衬底结构，以便制造可见的LED和激光器。此外，核 - 壳纳米线/ MQW活性结构可以通过在每个纳米线的非极性侧壁上的核 - 壳生长形成。

3. 发明授权

US08410496B2 Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material 有权
公开(公告)号：US08410496B2
公开(公告)日：2013-04-02
申请号：US13231559
申请日：2011-09-13
申请人： Stephen D. Hersee , Xin Wang , Xinyu Sun
发明人： Stephen D. Hersee , Xin Wang , Xinyu Sun
IPC分类号： H01L29/205 , H01L33/00
CPC分类号： H01L29/413 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B29/60 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02603 , H01L21/02609 , H01L21/02612 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/02642 , H01L29/045 , H01L29/0676 , H01L29/2003 , H01L29/775 , H01L31/0304 , H01L31/035236 , H01L31/184 , H01L33/18 , H01L33/24 , H01L2221/1094 , H01L2924/0002 , H01S5/1042 , H01S5/1835 , H01S5/18369 , H01S5/3428 , Y02E10/544 , Y02P70/521 , Y10S977/762 , Y10S977/816 , Y10T428/24612 , H01L2924/00
摘要： Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.

4. 发明申请

US20120001153A1 PULSED GROWTH OF CATALYST-FREE GROWTH OF GaN NANOWIRES AND APPLICATION IN GROUP III NITRIDE SEMICONDUCTOR BULK MATERIAL 有权
标题翻译：无机生长氮化镓纳米管的生长和III族氮化物半导体材料的应用
公开(公告)号：US20120001153A1
公开(公告)日：2012-01-05
申请号：US13231559
申请日：2011-09-13
申请人： Stephen D. Hersee , Xin Wang , Xinyu Sun
发明人： Stephen D. Hersee , Xin Wang , Xinyu Sun
IPC分类号： H01L29/15 , H01L29/12 , B82Y99/00
CPC分类号： H01L29/413 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B29/60 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02603 , H01L21/02609 , H01L21/02612 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/02642 , H01L29/045 , H01L29/0676 , H01L29/2003 , H01L29/775 , H01L31/0304 , H01L31/035236 , H01L31/184 , H01L33/18 , H01L33/24 , H01L2221/1094 , H01L2924/0002 , H01S5/1042 , H01S5/1835 , H01S5/18369 , H01S5/3428 , Y02E10/544 , Y02P70/521 , Y10S977/762 , Y10S977/816 , Y10T428/24612 , H01L2924/00
摘要： Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.
摘要翻译：示例性实施例提供包括高质量（即，无缺陷）III-N族纳米线和均匀III-N纳米线阵列的半导体器件及其可制造的可扩展工艺，其中位置，取向，横截面特征，长度和可以精确地控制每个纳米线的结晶度。可以使用脉冲生长模式来制造公开的提供约10nm至约1000微米的均匀长度的III-N族纳米线和/或纳米线阵列，其具有恒定的横截面特征，包括约10-1000nm的示例性直径。此外，可以通过聚结多个GaN纳米线和/或纳米线阵列来形成高质量的GaN衬底结构，以便制造可见的LED和激光器。此外，核 - 壳纳米线/ MQW活性结构可以通过在每个纳米线的非极性侧壁上的核 - 壳生长形成。

5. 发明授权

US07521274B2 Pulsed growth of catalyst-free growth of GaN nanowires and application in group III nitride semiconductor bulk material 有权
标题翻译： GaN纳米线无催化剂生长的脉冲生长和在III族氮化物半导体散装材料中的应用
公开(公告)号：US07521274B2
公开(公告)日：2009-04-21
申请号：US11684264
申请日：2007-03-09
申请人： Stephen D. Hersee , Xin Wang , Xinyu Sun
发明人： Stephen D. Hersee , Xin Wang , Xinyu Sun
IPC分类号： H01L21/00
CPC分类号： H01L29/413 , B82Y10/00 , B82Y20/00 , B82Y30/00 , C30B29/60 , H01L21/0237 , H01L21/02458 , H01L21/0254 , H01L21/02573 , H01L21/02603 , H01L21/02609 , H01L21/02612 , H01L21/0262 , H01L21/02636 , H01L21/02639 , H01L21/02642 , H01L29/045 , H01L29/0676 , H01L29/2003 , H01L29/775 , H01L31/0304 , H01L31/035236 , H01L31/184 , H01L33/18 , H01L33/24 , H01L2221/1094 , H01L2924/0002 , H01S5/1042 , H01S5/1835 , H01S5/18369 , H01S5/3428 , Y02E10/544 , Y02P70/521 , Y10S977/762 , Y10S977/816 , Y10T428/24612 , H01L2924/00
摘要： Exemplary embodiments provide semiconductor devices including high-quality (i.e., defect free) group III-N nanowires and uniform group III-N nanowire arrays as well as their scalable processes for manufacturing, where the position, orientation, cross-sectional features, length and the crystallinity of each nanowire can be precisely controlled. A pulsed growth mode can be used to fabricate the disclosed group III-N nanowires and/or nanowire arrays providing a uniform length of about 10 nm to about 1000 microns with constant cross-sectional features including an exemplary diameter of about 10-1000 nm. In addition, high-quality GaN substrate structures can be formed by coalescing the plurality of GaN nanowires and/or nanowire arrays to facilitate the fabrication of visible LEDs and lasers. Furthermore, core-shell nanowire/MQW active structures can be formed by a core-shell growth on the nonpolar sidewalls of each nanowire.
摘要翻译：示例性实施例提供包括高质量（即，无缺陷）III-N族纳米线和均匀III-N纳米线阵列的半导体器件及其可制造的可扩展工艺，其中位置，取向，横截面特征，长度和可以精确地控制每个纳米线的结晶度。可以使用脉冲生长模式来制造公开的提供约10nm至约1000微米的均匀长度的III-N族纳米线和/或纳米线阵列，其具有恒定的横截面特征，包括约10-1000nm的示例性直径。此外，可以通过聚结多个GaN纳米线和/或纳米线阵列来形成高质量的GaN衬底结构，以便制造可见的LED和激光器。此外，核 - 壳纳米线/ MQW活性结构可以通过在每个纳米线的非极性侧壁上的核 - 壳生长形成。

6. 发明授权

US08343823B2 Nanowire and larger GaN based HEMTs 有权
标题翻译：纳米线和较大的GaN基HEMT
公开(公告)号：US08343823B2
公开(公告)日：2013-01-01
申请号：US13461331
申请日：2012-05-01
申请人： Stephen D. Hersee , Xin Wang
发明人： Stephen D. Hersee , Xin Wang
IPC分类号： H01L21/338
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02389 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/8252 , H01L27/0605 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L29/7788 , H01L29/7789
摘要： Nanowire and larger, post-based HEMTs, arrays of such HEMTs, and methods for their manufacture are provided. In one embodiment, a HEMT can include a III-N based core-shell structure including a core member (e.g., GaN), a shell member (e.g., AlGaN) surrounding a length of the core member and a two-dimensional electron gas (2-DEG) at the interface therebetween. The core member including a nanowire and/or a post can be disposed over a doped buffer layer and a gate material can be disposed around a portion of the shell member. Exemplary methods for making the nanowire HEMTs and arrays of nanowire HEMTs can include epitaxially forming nanowire(s) and epitaxially forming a shell member from each formed nanowire. Exemplary methods for making the post HEMTs and arrays of post HEMTs can include etching a III-N layer to form III-N post(s) followed by formation of the shell member(s).
摘要翻译：提供了纳米线和更大的后置HEMT，这样的HEMT的阵列及其制造方法。在一个实施例中，HEMT可以包括基于III-N的核 - 壳结构，其包括芯构件（例如，GaN），围绕芯构件的长度的壳构件（例如，AlGaN）和二维电子气 2-DEG）。包括纳米线和/或柱的芯构件可以设置在掺杂缓冲层上方，并且栅极材料可以围绕壳构件的一部分设置。用于制备纳米线HEMT和纳米线HEMT阵列的示例性方法可以包括外延形成纳米线并从每个形成的纳米线外延地形成壳部件。用于制造后HEMT和后HEMT阵列的示例性方法可以包括蚀刻III-N层以形成III-N柱，随后形成壳构件。

7. 发明授权

US08188513B2 Nanowire and larger GaN based HEMTS 有权
标题翻译：纳米线和更大的GaN基HEMTS
公开(公告)号：US08188513B2
公开(公告)日：2012-05-29
申请号：US12246044
申请日：2008-10-06
申请人： Stephen D. Hersee , Xin Wang
发明人： Stephen D. Hersee , Xin Wang
IPC分类号： H01L29/66
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02389 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/8252 , H01L27/0605 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L29/7788 , H01L29/7789
摘要： Nanowire and larger, post-based HEMTs, arrays of such HEMTs, and methods for their manufacture are provided. In one embodiment, a HEMT can include a III-N based core-shell structure including a core member (e.g., GaN), a shell member (e.g., AlGaN) surrounding a length of the core member and a two-dimensional electron gas (2-DEG) at the interface therebetween. The core member including a nanowire and/or a post can be disposed over a doped buffer layer and a gate material can be disposed around a portion of the shell member. Exemplary methods for making the nanowire HEMTs and arrays of nanowire HEMTs can include epitaxially forming nanowire(s) and epitaxially forming a shell member from each formed nanowire. Exemplary methods for making the post HEMTs and arrays of post HEMTs can include etching a III-N layer to form III-N post(s) followed by formation of the shell member(s).
摘要翻译：提供了纳米线和更大的后置HEMT，这样的HEMT的阵列及其制造方法。在一个实施例中，HEMT可以包括基于III-N的核 - 壳结构，其包括芯构件（例如，GaN），围绕芯构件的长度的壳构件（例如，AlGaN）和二维电子气 2-DEG）。包括纳米线和/或柱的芯构件可以设置在掺杂缓冲层上方，并且栅极材料可以围绕壳构件的一部分设置。用于制造纳米线HEMT和纳米线HEMT阵列的示例性方法可以包括外延形成纳米线并从每个形成的纳米线外延地形成壳部件。用于制造后HEMT和后HEMT阵列的示例性方法可以包括蚀刻III-N层以形成III-N柱，随后形成壳构件。

8. 发明申请

US20110169012A1 NANOWIRE AND LARGER GaN BASED HEMTS 有权
标题翻译： NANOWIRE和LARGER基于GaN的HEMTS
公开(公告)号：US20110169012A1
公开(公告)日：2011-07-14
申请号：US12246044
申请日：2008-10-06
申请人： Stephen D. Hersee , Xin Wang
发明人： Stephen D. Hersee , Xin Wang
IPC分类号： H01L27/105 , H01L29/778 , H01L21/338 , H01L21/8232
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02389 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/8252 , H01L27/0605 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L29/7788 , H01L29/7789
摘要： Nanowire and larger, post-based HEMTs, arrays of such HEMTs, and methods for their manufacture are provided. In one embodiment, a HEMT can include a III-N based core-shell structure including a core member (e.g., GaN), a shell member (e.g., AlGaN) surrounding a length of the core member and a two-dimensional electron gas (2-DEG) at the interface therebetween. The core member including a nanowire and/or a post can be disposed over a doped buffer layer and a gate material can be disposed around a portion of the shell member. Exemplary methods for making the nanowire HEMTs and arrays of nanowire HEMTs can include epitaxially forming nanowire(s) and epitaxially forming a shell member from each formed nanowire. Exemplary methods for making the post HEMTs and arrays of post HEMTs can include etching a III-N layer to form II-N post(s) followed by formation of the shell member(s).
摘要翻译：提供了纳米线和更大的后置HEMT，这样的HEMT的阵列及其制造方法。在一个实施例中，HEMT可以包括基于III-N的核 - 壳结构，其包括芯构件（例如，GaN），围绕芯构件的长度的壳构件（例如，AlGaN）和二维电子气 2-DEG）。包括纳米线和/或柱的芯构件可以设置在掺杂缓冲层上方，并且栅极材料可以围绕壳构件的一部分设置。用于制造纳米线HEMT和纳米线HEMT阵列的示例性方法可以包括外延形成纳米线并从每个形成的纳米线外延地形成壳部件。制备后HEMT和后HEMT阵列的示例性方法可以包括蚀刻III-N层以形成II-N柱，随后形成壳构件。

9. 发明申请

US20120225526A1 NANOWIRE AND LARGER GaN BASED HEMTS 有权
标题翻译： NANOWIRE和LARGER基于GaN的HEMTS
公开(公告)号：US20120225526A1
公开(公告)日：2012-09-06
申请号：US13461331
申请日：2012-05-01
申请人： Stephen D. Hersee , Xin Wang
发明人： Stephen D. Hersee , Xin Wang
IPC分类号： H01L21/335 , B82Y40/00
CPC分类号： H01L29/0665 , B82Y10/00 , H01L21/02389 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02603 , H01L21/0262 , H01L21/02639 , H01L21/8252 , H01L27/0605 , H01L29/2003 , H01L29/66462 , H01L29/7787 , H01L29/7788 , H01L29/7789
摘要： Nanowire and larger, post-based HEMTs, arrays of such HEMTs, and methods for their manufacture are provided. In one embodiment, a HEMT can include a III-N based core-shell structure including a core member (e.g., GaN), a shell member (e.g., AlGaN) surrounding a length of the core member and a two-dimensional electron gas (2-DEG) at the interface therebetween. The core member including a nanowire and/or a post can be disposed over a doped buffer layer and a gate material can be disposed around a portion of the shell member. Exemplary methods for making the nanowire HEMTs and arrays of nanowire HEMTs can include epitaxially forming nanowire(s) and epitaxially forming a shell member from each formed nanowire. Exemplary methods for making the post HEMTs and arrays of post HEMTs can include etching a III-N layer to form III-N post(s) followed by formation of the shell member(s).
摘要翻译：提供了纳米线和更大的后置HEMT，这样的HEMT的阵列及其制造方法。在一个实施例中，HEMT可以包括基于III-N的核 - 壳结构，其包括芯构件（例如，GaN），围绕芯构件的长度的壳构件（例如，AlGaN）和二维电子气 2-DEG）。包括纳米线和/或柱的芯构件可以设置在掺杂缓冲层上方，并且栅极材料可以围绕壳构件的一部分设置。用于制造纳米线HEMT和纳米线HEMT阵列的示例性方法可以包括外延形成纳米线并从每个形成的纳米线外延地形成壳部件。用于制造后HEMT和后HEMT阵列的示例性方法可以包括蚀刻III-N层以形成III-N柱，随后形成壳构件。

10. 发明申请

US20070257264A1 CATALYST-FREE GROWTH OF GaN NANOSCALE NEEDLES AND APPLICATION IN InGaN/GaN VISIBLE LEDS 审中-公开
标题翻译：氮化镓纳米颗粒的无催化增长和InGaN / GaN可见光LED的应用
公开(公告)号：US20070257264A1
公开(公告)日：2007-11-08
申请号：US11559214
申请日：2006-11-13
申请人： Stephen Hersee , Xin Wang , Steven Brueck , Xinyu Sun
发明人： Stephen Hersee , Xin Wang , Steven Brueck , Xinyu Sun
IPC分类号： H01L33/00 , H01L31/0256
CPC分类号： G02B6/107 , B82Y20/00 , C30B23/00 , C30B25/00 , C30B29/60 , H01L21/0237 , H01L21/02458 , H01L21/02521 , H01L21/0254 , H01L21/02603 , H01L21/02639 , H01L21/02642 , H01L21/0265 , H01L21/02664 , H01L33/007 , H01L33/08 , H01L2933/0083
摘要： Exemplary embodiments provide a scalable process for the growth of large scale and uniform III-N nanoneedle arrays with precise control of the position, cross sectional shape and/or dimensions for each nanoneedle. In an exemplary process, a plurality of nanoneedle array can be formed by growing one or more semiconductor material in a plurality of patterned rows of apertures with a predetermined geometry. The plurality of patterned rows of apertures can be formed though a thick selective nanoscale growth mask, which can later be removed to expose the plurality of nanoneedle arrays. The plurality of nanoneedle arrays can be connected top and bottom by a continuous coalesced epitaxial film, which can be used in a planar semiconductor process or be further configured as a photonic crystal to improve the output coupling of nanoscale optoelectronic devices such as LEDs and/or lasers.
摘要翻译：示例性实施例提供了用于大规模和均匀的III-N纳米针阵列的生长的可缩放方法，其精确控制每个纳米针的位置，横截面形状和/或尺寸。在示例性过程中，可以通过以预定几何形状在多个图案化的一排孔中生长一个或多个半导体材料来形成多个纳米针阵列。可以通过厚的选择性纳米尺度生长掩模来形成多个图案化的孔排，其随后可被去除以暴露多个纳米针阵列。多个纳米针阵列可以通过连续聚结的外延膜连接到顶部和底部，其可以用于平面半导体工艺中，或者被进一步配置为光子晶体，以改善纳米尺度光电子器件如LED和/或激光器

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